SGSP517 Search Results

SGSP517 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SGSP517		Unknown	Semiconductor Master Cross Reference Guide		Scan	PDF
SGSP517		STMicroelectronics	N-CHANNEL POWER MOS TRANSISTORS		Scan	PDF

SGSP517 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
p217s Abstract: p317 w55c p217 ic 17358 17356 C82 to-220 DIODE C06 15 C82J W25-C Text: S G S-THOnSON D7E 1 73C 1 7 355 SGSP216/P2I7 1 SGSP316/P317 ] SGSP516/P517 ; HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS V DGR V qs Id Idlm •! P.0« "^stg Tl o Q01?flSû 1 T 3 9 - / / N-CHANNEL POWER MOS TRANSISTORS These products are diffused multi-cell silicon gate	OCR Scan	SGSP216/P217 SGSP316/P317 SGSP516/F517 OT-82 SGSP216 SGSP217 T0-220 SGSP316 SGSP317 SGSP516 p217s p317 w55c p217 ic 17358 17356 C82 to-220 DIODE C06 15 C82J W25-C	PDF
Diode D7E Abstract: sef220 SEF221 Text: 7^237 S G S-THOMSON D7E D 73C 17474 D 7^ 3 9 -/3 SEF220 SEF221 SEF222 SEF223 '•-i ?\ \\\ N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.	OCR Scan	SEF220 SEF221 SEF222 SEF223 00V/150 SEF223 Diode D7E	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

p217s

Abstract: p317 w55c p217 ic 17358 17356 C82 to-220 DIODE C06 15 C82J W25-C
Text: S G S-THOnSON D7E 1 73C 1 7 355 SGSP216/P2I7 1 SGSP316/P317 ] SGSP516/P517 ; HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS V DGR V qs Id Idlm •! P.0« "^stg Tl o Q01?flSû 1 T 3 9 - / / N-CHANNEL POWER MOS TRANSISTORS These products are diffused multi-cell silicon gate

OCR Scan

SGSP216/P217 SGSP316/P317 SGSP516/F517 OT-82 SGSP216 SGSP217 T0-220 SGSP316 SGSP317 SGSP516 p217s p317 w55c p217 ic 17358 17356 C82 to-220 DIODE C06 15 C82J W25-C

PDF

Diode D7E

Abstract: sef220 SEF221
Text: 7^237 S G S-THOMSON D7E D 73C 17474 D 7^ 3 9 -/3 SEF220 SEF221 SEF222 SEF223 '•-i ?\ \\\ N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.