SGS-THOMSON M27C4001 Search Results

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

smd transistor x8

Abstract: smd transistor c011 12v 3a regulator LM317 WP smd transistor M5482 L298 L297 M5480 5kw dc-dc SGSF463 BYT12PI100
Contextual Info: DATA LOGGERS RECOMMENDED PRODUCTS FROM SGS-THOMSON PRINT HEAD HAMMER DRIVE Type Function ULN2003A ULN2064B ULN2068B ULN2074B L702N/A L6221AS L9222 High Current Darlington Drivers Medium Current Low Saturation Transistor Array BDX53 BDX54 Series BDW93 & BDW94 Series

SGS-Thomson m27c4001

Abstract: CMOS J601 27c4001 M27C4001 M27C4001-12F1
Contextual Info: JAN 2 2 199T SGS-THOMSON M27C4001 4096K 512K x 8 CMOS UV EPROM PRELIMINARY DATA VERY FAST ACCESS TIME : 100ns. COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE. LOW POWER "CMOS" CONSUMPTION : . Operating current 70mA at 10 MHz . Standby current 10OjiA.

Contextual Info: SGS-THOMSON M27C4001 4096K 512K x 8 CMOS UV EPROM PRELIMINARY DATA • VERY FAST ACCESS TIME : 100ns. ■ COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE. ■ LOW POWER '’CMOS" CONSUMPTION : . Operating current 70mA at 10 MHz - Standby current 100(iA.

Contextual Info: JAN 2 2 991 SGS-THOMSON M27C4001 iy 4096K (512K x 8 CMOS UV EPROM PRELIMINARY DATA • VERY FAST ACCESS TIME : 100ns. ■ COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE. ■ LOW POWER "CMOS" CONSUMPTION : . Operating current 70mA at 10 MHz

27C4001

Abstract: DA217
Contextual Info: SGS-THOMSON M27C4001 4 Megabit 512K x 8 UV EPROM and OTP EPROM FAST ACCESS TIME: 55ns LOW POWER ’’CMOS” CONSUMPTION: - Active Current 30m A at 5MHz - Standby Current lOO^A PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE tor AUTOMATED PROGRAMMING PROGRAMMING TIMES ot AROUND 48sec.

Contextual Info: 52E G l . D 712^237 DQ37bS0 SGS-THOMSON fc.13 • SGTH T ~ i - 1 3 - Z <=} S G S- THOMSON M27V401 ino LOW VOLTAGE CMOS 4 Megabit (512K x 8 UV EPROM and OTP ROM ADVANCE DATA ■ LOW VOLTAGE READ OPERATION - Vcc Range: 3V to 5.5V (T a = 0 to 70°C) - Vcc Range: 3.2V to 5.5V (T a = -4 0 to 85°C)

27C4001-12F1

Abstract: 27C4001-15 27C40012
Contextual Info: 5 Ï. SGS-THOMSON itLKSTJI^OliìDOlSl M27C4001 4096K 512K x 8 CMOS UV EPROM PRELIM INA R Y DATA • VERY FAST ACCESS TIME : 100ns. ■ COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE. ■ LOW POWER "CMOS" CONSUMPTION : _ Operating current 70mA at 10 MHz

PJ 1179

Abstract: M27512 12b1 M27F512 ST24C08B1 M27C256B-12F1 ST93C46AB1 m27c4001-12f1 m48z32y M27C1001-20F1 ST24C04CM6TR
Contextual Info: MEMORY SELECTOR Leading Edge Memories GO Leading Edge Memories Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs Broad Range SGS-THOMSON is a world leader in non-volatile memories, manufacturing a

27C4001

Abstract: G1168 8W32
Contextual Info: / T T SGS-THOMSON *7W* M27C4001 RilD g ®I(LI(OT®ilKgi CMOS 4 Megabit (512K x 8 UV EPROM and OTP ROM ABBREVIATED DATA VERY FAST ACCESS TIME: 80ns COMPATIBLE with HIGH SPEED MICROPRO­ CESSORS, ZERO WAIT STATE LOW POWER "CMOS" CONSUMPTION: - Active Current 30mA at 5MHz

256x16 eprom

Abstract: GS-2I5-D12 GS-D250M PHDIP28 GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B
Contextual Info: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SGS-THOMSON DATABOOKS ORDER CODE DB a 4 B IT MCU FAMILY ET9400 DBET9400ST/1

AN620

Abstract: M27C4001 M27W401 PLCC32 TSOP32
Contextual Info: . . SGS-THOMSON k7 # . RfilDÊlMSJlilLIlÊ'inEORODtgS M27W401 4 Mbit 512Kb x 8 Low Voltage OTP EPROM • LOW VOLTAGE READ OPERATION: 2.7V to 3.6V ■ FAST ACCESS TIME: - 70ns at Vcc = 3.0V to 3.6V - 80ns at Vcc = 2.7V to 3.6V ■ LOW POWER CONSUMPTION: - Active Current 15mA

misplaced Wire Bonds

Abstract: TOP SIDE MARKING M27C512 1562Q M27C512 SGS-THOMSON
Contextual Info: QUALITY & RELIABILITY REPORT January to December 1995 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, EPROM, OTP Memory and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

Contextual Info: /= T SGS-THOMSON * 7 # . RfflDW iojigwiiaofgi M27W401 4 Mbit 512Kb x 8 Low Voltage OTP EPROM • LOW VOLTAGE READ OPERATION: 2.7V to 3.6V ■ FAST ACCESS TIME: - 70ns at Vcc = 3.0V to 3.6V - 80ns at Vcc = 2.7V to 3.6V ■ LOW POWER CONSUMPTION: - Active Current 15mA

Contextual Info: QUALITY & RELIABILITY REPORT April 1995 to March 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

TOP SIDE MARKING M27C512

Abstract: m27c512 equivalent 4Q96 M27128A M2716 M2732A M2764A QRR037 4Q96-1Q97 M27C256B datecode
Contextual Info: QUALITY & RELIABILITY REPORT April 1996 to March 1997 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

TOP SIDE MARKING M27C512

Contextual Info: QUALITY & RELIABILITY REPORT October 1995 to September 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

M27C512 SGS-THOMSON

Abstract: M2201 ST93C46
Contextual Info: QUALITY & RELIABILITY REPORT July 1995 to June 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

SGS-Thomson m27c4001

Contextual Info: w# SGS-THOMSON k7#1 IM lMilLIOTiM IKgS M27W401 4 Mbit 512Kb x 8 Low Voltage OTP EPROM • LOW VOLTAGE READ OPERATION: 2.7V to 3.6V ■ FAST ACCESS TIME: - 70ns at Vcc = 3.0V to 3.6V - 80ns at Vcc = 2.7V to 3.6V ■ LOW POWER CONSUMPTION: - Active Current 15mA

M27C256B datecode

Abstract: PART MARKING M27C512 M27C256B PART MARKING m27c512 equivalent M27C256 M27C512 marking M27128A M2716 M2764A QRR038
Contextual Info: QUALITY & RELIABILITY REPORT July 1996 to June 1997 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

Contextual Info: SGS-THOMSON ^ 7 # M27C4001 ^ 0 g ^ @ [E L [E ^ (Q R 3 0 (g i CMOS 4 Megabit (512K x 8) UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 80ns ■ COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 50mA at 5MHz

sgs thomson

Abstract: FDIP24 M87C512 eprom rom 512k x 16 bits M27C512 SGS-THOMSON capacity of EPROM
Contextual Info: ORGANIZATION ACCESS TIME PART NUMBER PACKAGE POWER SUPPLY CONSUMPTION A C T / STANDBY 16K Bits 2K x 8 350 ns M2716 FDIP 24 24K Bits 4K x 8 200 ns 4,75 to 5,25V 1 0 0 /2 5 mA 4,5 to 5,5V 450 ns M2732A FDIP 24 4,75 to 5,25V 1 2 5 /3 5 mA 4,5 to 5,5V 250 ns 300 ns

bul49d equivalent

Abstract: 12B1 ZENER 10A triac control PWM battery Charger AVS10CB1 thyristor battery charger 24v transistor equivalent table BUL49D ST62T10B6_HWD sgs Thomson Thyristor 220v ac to 5v dc 100w smps rectifier bridge 300v 30a
Contextual Info: INDEX ST Part No. Farnell Order Code Description AMST62APPST/1 AVS10CB1 AVS1ACP08 BUL49D CDDATASHXXX DBST6ST/4 EFS11 EFS1ACD EFS21 EFS2ACD FLC10-200D L6219 LPR30 MC3403N ST62-CDROM ST7-CDROM ST7MDT1-EPB/UK ST7MDT1-KIT/UK ST7MDT2-EPB/UK ST7MDT2-KIT/UK STP80NS04Z

LEAPER-3

Abstract: 74189 7489 sram 4N34 89C51 interfacing with lcd display ic 74192 pin configuration interfacing 20x4 LCD with 89c51 IC 74189 DATA LEAP-U1 LEAPER-10 driver
Contextual Info: COMPANY PROFILE 1 Leap Electronic was established in 1980 located in Taipei Taiwan. With great experienced employees, Leap has dedicated on test equipment and provided a whole and perfect environment of development. Additional, the Company has been qualified by major IC manufacturer such as ATMEL, AMD, MICROCHIP, WINBOND,etc.