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    SGM2014 Search Results

    SGM2014 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SGM2014 Shengbang Microelectronics Low Power, Low Dropout, 250mA, RF - Linear Regulators Original PDF
    SGM2014 Sony GaAs N-channel Dual Gate MES FET Original PDF
    SGM2014-1.5 Shengbang Microelectronics Low Power, Low Dropout, 250mA, RF - Linear Regulators Original PDF
    SGM2014-1.8 Shengbang Microelectronics Low Power, Low Dropout, 250mA, RF - Linear Regulators Original PDF
    SGM2014-2.5 Shengbang Microelectronics Low Power, Low Dropout, 250mA, RF - Linear Regulators Original PDF
    SGM2014AM Sony GaAs N-channel Dual Gate MES FET Original PDF
    SGM2014AM Sony GaAs N-channel Dual Gate MES FET Original PDF
    SGM2014AN Sony GaAs N-channel Dual Gate MES FET Original PDF
    SGM2014AN Sony GaAs N-channel Dual Gate MES FET Original PDF
    SGM2014M Sony GaAs N-channel Dual Gate MES FET Original PDF
    SGM2014M Sony Gaas N-channel Dual Gate Mes Fet Scan PDF
    SGM2014M Sony GaAs N-channel Dual-Gate MES FET Scan PDF
    SGM2014M Sony GaAs N-channel Dual Gate MES FET Scan PDF

    SGM2014 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY SGM2014AN GaAs N-channel Dual Gate MES FET Preliminary Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF


    OCR Scan     		SGM2014AN SGM2014AN 900MHz M-281 JO-651 PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY S G M 2014A M GaAs N-channel Dual Gate MES FET Preliminary D escription The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF


    OCR Scan     		SGM2014AM 900MHz DG2D044 SGM2014AM M-254 PDF

    fet dual gate sot143

    Abstract: SGM2014M
    Text: SGM2014M SONY, GaAs N-channel Dual Gate MES FET_ hor the availability of this product, please contact the sales officir] Description Package Outline Unit : mm The SGM2014M is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is


    OCR Scan     		SGM2014M SGM2014M 900MHz Ga-18dB OT-143 -64l0Â fet dual gate sot143 PDF

    Sony Semiconductor M-281

    Abstract: No abstract text available
    Text: SONY GaAs N-channel Dual Gate MES FET Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.


    OCR Scan     		SGM2014AN 900MHz 900MHz M-281 SGM2014AN M-281 Sony Semiconductor M-281 PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY GaAs N-channel Dual Gate MES FET Description The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.


    OCR Scan     		SGM2014AM 900MHz SGM2014AM M-254 PDF

    "GaAs N-channel Dual Gate"

    Abstract: SGM2014AN Sony Semiconductor M-281
    Text: SGM2014AN GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications


    Original     		SGM2014AN SGM2014AN M-281 900MHz "GaAs N-channel Dual Gate" Sony Semiconductor M-281 PDF

    BZM55B5V6

    Abstract: SGM2014 sg sot23 marking 1F 6 pin Zener diode sot23-5
    Text: SGM2014 Low Power, Low Dropout, 250mA, RF - Linear Regulators GENERAL DESCRIPTION FEATURES The SGM2014 series low-power, low-noise, low-dropout, CMOS linear voltage regulators operate from a 2.5V to 5.5V input and deliver up to 250mA. They are the perfect choice for low voltage, low power applications.


    Original     		SGM2014 250mA, SGM2014 250mA. current160 250mA 250mV BZM55B5V6 sg sot23 marking 1F 6 pin Zener diode sot23-5 PDF

    N-Channel, Dual-Gate FET

    Abstract: SGM2014AM
    Text: SGM2014AM GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications


    Original     		SGM2014AM SGM2014AM 900MHz M-254 N-Channel, Dual-Gate FET PDF

    Untitled

    Abstract: No abstract text available
    Text: SGM2014 Low Power, Low Dropout, 250mA, RF - Linear Regulators GENERAL DESCRIPTION FEATURES The SGM2014 series low-power, low-noise, low-dropout, z Low Output Noise: 30µVRMS TYP 10Hz to 100kHz CMOS linear voltage regulators operate from a 2.5V to z Ultra-Low Dropout Voltage:


    Original     		SGM2014 250mA, SGM2014 100kHz) 250mA. 250mV 250mA PDF

    Untitled

    Abstract: No abstract text available
    Text: SGM2014AN GaAs N-channel Dual Gate MES FET Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.


    Original     		SGM2014AN SGM2014AN M-281 900MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: SGM2014AM GaAs N-channel Dual Gate MES FET Preliminary Description The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF


    Original     		SGM2014AM SGM2014AM 900MHz M-254 PDF

    SGM2014AM

    Abstract: No abstract text available
    Text: SGM2014AM GaAs N-channel Dual Gate MES FET Description The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.


    Original     		SGM2014AM SGM2014AM 900MHz M-254 PDF

    SGM2014AN

    Abstract: No abstract text available
    Text: SGM2014AN GaAs N-channel Dual Gate MES FET Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.


    Original     		SGM2014AN SGM2014AN M-281 900MHz PDF

    Sony 104A

    Abstract: No abstract text available
    Text: SGM2014M] SONY. GaAs N-channel Dual Gate MES FET Description Package Outline The SGM2014M is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable lor a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.


    OCR Scan     		SGM2014M] SGM2014M 900MHz at900MHz OT-143 M-254 Sony 104A PDF

    cx20185

    Abstract: UHF FM Transceiver motorola 5118 motorola 5118 uhf CXA1446S Sony Semiconductor ILX511 CXA1691 CXA1733M CXA1619S SONY ICX
    Text: Sony Semiconductor 96.10 Sony Semiconductor Product List ’96 – 10 TABLE OF CONTENTS MEMORY CMOS/Bi-CMOS SRAM . 1 • LINEUP . 1


    Original     		LCX009AK/AKB LCX011AM LCX012BL LCX016AL LCX016AM LCX019AM PHD003 PHD010 PHD011 PHD016 cx20185 UHF FM Transceiver motorola 5118 motorola 5118 uhf CXA1446S Sony Semiconductor ILX511 CXA1691 CXA1733M CXA1619S SONY ICX PDF