M15451E
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can
|
Original
|
PDF
|
PD29F064115-X
64M-BIT
16-BIT
PD29F064115-X
M15451E
|
BGA-101P-M01
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash • Power Supply Voltage of 2.3 V to 2.7 V for FCRAM
|
Original
|
PDF
|
DS05-50208-2E
MB84LD23381EJ-10
101-ball
BGA-101P-M01
|
A039h
Abstract: 3A400
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.
|
Original
|
PDF
|
16/4M
MBM29XL12DF
128M-bit,
90-pin
96-ball
A039h
3A400
|
4kw marking
Abstract: No abstract text available
Text: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
|
Original
|
PDF
|
F0307
4kw marking
|
32 KB SRAM
Abstract: DS05-50208-1E SWITCH SA125
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-1E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power supply voltage of 2.3 to 2.7 V for FCRAM • Power supply voltage of 2.3 to 2.7 V for Flash
|
Original
|
PDF
|
DS05-50208-1E
MB84LD23381EJ-10
101-ball
MB84VD23381EJ-90
32 KB SRAM
DS05-50208-1E
SWITCH SA125
|
4kw marking
Abstract: MBM29DL640E
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50211-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64M (x8/×16) FLASH MEMORY & 8M (×8/×16) STATIC RAM MB84VD23280EA-90/MB84VD23280EE-90 • FEATURES • Power supply voltage of 2.7 V to 3.3 V • High performance
|
Original
|
PDF
|
DS05-50211-2E
MB84VD23280EA-90/MB84VD23280EE-90
101-ball
4kw marking
MBM29DL640E
|
32 KB SRAM
Abstract: MBM29DL640E
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50209-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M ( x 16) FLASH MEMORY & 16 M ( × 16) SRAM Interface FCRAM MB84VD23381EJ-90 • FEATURES • Power supply voltage of 2.7 V to 3.1 V for FCRAM • Power supply voltage of 2.7 V to 3.3 V for Flash
|
Original
|
PDF
|
DS05-50209-2E
MB84VD23381EJ-90
32 KB SRAM
MBM29DL640E
|
DS05-20905-1E
Abstract: BGA-48P-M13 FPT-48P-M19 MBM29DL64DF MBM29DL64DF-70
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20905-1E FLASH MEMORY CMOS 64 M 8 M x 8/4 M × 16 BIT Dual Operation MBM29DL64DF-70 • DESCRIPTION MBM29DL64DF is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 M words of 16 bits each. The device comes in 48-pin TSOP (1) and 48-ball FBGA packages. This device is designed to be
|
Original
|
PDF
|
DS05-20905-1E
MBM29DL64DF-70
MBM29DL64DF
48-pin
48-ball
F0303
DS05-20905-1E
BGA-48P-M13
FPT-48P-M19
MBM29DL64DF-70
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.2E PAGE MODE FLASH MEMORY CMOS 96M 6M x 16 BIT MBM29QM96DF-65/80 • GENERAL DESCRIPTION The MBM29QM96DF is 96M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 6M words by 16 bits. The device is offered in a 80-ball FBGA package. This device is designed to be programmed
|
Original
|
PDF
|
MBM29QM96DF-65/80
MBM29QM96DF
96M-bit,
80-ball
F0212
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50210-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64 M (x ×8/× ×16) FLASH MEMORY & 8 M (× ×8/× ×16) STATIC RAM MB84LD23280EA-10/MB84LD23280EE-10 • FEATURES • Power supply voltage of 2.3 V to 2.7 V
|
Original
|
PDF
|
DS05-50210-1E
MB84LD23280EA-10/MB84LD23280EE-10
101-ball
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50214-1E 3Stacked MCP Multi-Chip Package FLASH & FCRAM & SRAM CMOS 64M (x16) FLASH MEMORY & 16M (×16) Mobile FCRAM & 4M (×16) STATIC RAM MB84VR5E3J1A1-85 • FEATURES • Power Supply Voltage of 2.7 to 3.1V • High Performance
|
Original
|
PDF
|
DS05-50214-1E
MB84VR5E3J1A1-85
85-ball
F0110
|
SGA13
Abstract: No abstract text available
Text: MB84VD23481FJ-70 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.
|
Original
|
PDF
|
MB84VD23481FJ-70
F0307
SGA13
|
Untitled
Abstract: No abstract text available
Text: MB84VD23381FJ-80 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.
|
Original
|
PDF
|
MB84VD23381FJ-80
F0307
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50221-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64 M (x ×8/× ×16) FLASH MEMORY & 8 M (× ×8/× ×16) STATIC RAM MB84VD23280FA-70 • FEATURES • • • • • Power Supply Voltage of 2.7 V to 3.1 V
|
Original
|
PDF
|
DS05-50221-1E
MB84VD23280FA-70
65-ball
F0204
|
|
|
HPPB
Abstract: DS05 FPT-56P-M01 MBM29QM12DH MBM29QM12DH60 MBM29QM12DH-60 SGA71 Diode SA97
Text: MBM29QM12DH -60 データシート 生産終息品 MBM29QM12DH -60 Cover Sheet 本製品は既に終息しておりますので新規設計へのご採用はご遠慮下さいますようお願いします。本データシートは参照及 び履歴目的でのみご利用願います。
|
Original
|
PDF
|
MBM29QM12DH
MBM29QM12DH
DS05-20909-2
DS05-20909-2
HPPB
DS05
FPT-56P-M01
MBM29QM12DH60
MBM29QM12DH-60
SGA71
Diode SA97
|
MC-22212361F9-D80X-CD5
Abstract: MC-22212361F9-E85X-CD5 NEC MCP SRAM FLASH a810c
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-22212361-X MCP MULTI-CHIP PACKAGE FLASH MEMORY AND SRAM 64M-BIT PAGE MODE FLASH MEMORY AND 4M-BIT SRAM Description The MC-22212361-X is a stacked type MCP (Multi-Chip Package) of 67,108,864 bits (4,194,304 words by 16 bits)
|
Original
|
PDF
|
MC-22212361-X
64M-BIT
MC-22212361-X
85-pin
-D80X
-E85X
MC-22212361F9-D80X-CD5
MC-22212361F9-E85X-CD5
NEC MCP SRAM FLASH
a810c
|
60FFFF
Abstract: No abstract text available
Text: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
|
Original
|
PDF
|
F0309
60FFFF
|
56-Lead TSOP
Abstract: No abstract text available
Text: SPANSION TM Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: MBM29DL640E80/90/12 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.
|
Original
|
PDF
|
MBM29DL640E80/90/12
F0305
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-24222311-X MCP MULTI-CHIP PACKAGE FLASH MEMORY AND MOBILE SPECIFIED RAM 64M-BIT FLASH MEMORY AND 32M-BIT MOBILE SPECIFIED RAM Description The MC-24222311-X is a stacked type MCP (Multi-Chip Package) of 67,108,864 bits (4,194,304 words by 16 bits)
|
Original
|
PDF
|
MC-24222311-X
64M-BIT
32M-BIT
MC-24222311-X
85-pin
|
MB84VF5F5F5J2-70
Abstract: MBM29DL64DF
Text: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
|
Original
|
PDF
|
F0302
MB84VF5F5F5J2-70
MBM29DL64DF
|
Untitled
Abstract: No abstract text available
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash
|
Original
|
PDF
|
DS05-50208-3E
MB84LD23381EJ-10
101-ball
|
FPT-56P-M01
Abstract: MBM29PL12LM SA176
Text: MBM29PL12LM10 Data Sheet Retired Product MBM29PL12LM 10 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been
|
Original
|
PDF
|
MBM29PL12LM10
MBM29PL12LM
DS05-20914-3E
F0405
ProductDS05-20914-3E
FPT-56P-M01
MBM29PL12LM
SA176
|
pdl128g70
Abstract: SA90 1D400
Text: ADVANCE INFORMATION Am29PDL128G 128 Megabit 8 M x 16-Bit/4 M x 32-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory with VersatileIOTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • 128Mbit Page Mode device ■ Software command-set compatible with JEDEC 42.4
|
Original
|
PDF
|
Am29PDL128G
16-Bit/4
32-Bit)
128Mbit
16-bit)
Am29F
Am29LV
LAB080
pdl128g70
SA90
1D400
|
