SGA20 Search Results

Nuvoton 885

Abstract: Nuvoton 795 w83627uhg watchdog dc-dc led driver INTEL 845 MOTHERBOARD CIRCUIT diagram W83627UHG temperature rating schematic diagram intel W83627DHG 1121 diode LED LG GP 836 DIODE Winbond W83627DHG
Contextual Info: W83627UHG NUVOTON LPC I/O Date: September 17, 2008 Revision: 1.44 -I- Publication Release Date: March 24, 2008 Revision 1.44 TABLE OF CONTENTS – 1. 2. 3. 4. 5. GENERAL DESCRIPTION . 1

w83977eg

Abstract: w83977ef-aw W83977EG-AW 16450 UART 13SP O16u
Contextual Info: W83977EF-AW /W83977EG-AW NUVOTON ISA I/O W83977EF-AW W83977EG-AW -I - Publication Release Date: January, 2010 Revision 1.5 W83977EF-AW /W83977EG-AW TABLES OF CONTENTS 1. GENERAL DESCRIPTION .1

M15451E

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can

CREC 3.579545 MHz

Abstract: floppy disk interface PC87911 PC97 FDC87W22 FDC97W33X DB25 CONNECTOR CR25 PHOENIX amikey
Contextual Info: FDC97W33x Integrated I/O Controller with Wakeup Features FEATURES • • • • • • • • • • 5 Volt Operation Plug & Play 1.0A Compliant Supports 13 IRQs, 4 DMA Channels, Full 16 Bit Addresses Decoding Capable of ISA Bus IRQ Sharing PC 98/99 and ACPI 1.0 Compliant

amikey-2

Abstract: amikey MOA2 W83627HF/F W83627HF-AW phoenix multikey
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4kw marking

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50308-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x16) FLASH MEMORY & 8M (×16) STATIC RAM MB84VD22280FA-70/MB84VD22290FA-70 MB84VD22280FE-70/MB84VD22290FE-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.1 V

1GP10

Abstract: joystick PS2 MOA2 MOB2 ISO7816 PC99 RECS-80 W83627SF Winbond LPC 1GP20
Contextual Info: W83627SF W83627SF WINBOND I/O -1- Publication Release Date: May 31, 2005 Revision A1 W83627SF Table of Contents1. GENERAL DESCRIPTION . 6 2. FEATURES . 7

FPT-48P-M19

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20904-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF-70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V

SA70

Abstract: 2SA31
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50212-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 • FEATURES

SA70

Abstract: 18FFFFH
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50204-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 • FEATURES • Power supply voltage of 2.7 to 3.3 V

MAX232 G4

Abstract: IC404 IC808 ic401 diode C728 diode c729 transistor C721 IC818 ic811 C729
Contextual Info: MPC555 Evaluation Board Schematics A B C D VCC3_3 1 2 3 4 5 6 7 8 9 10 R101 4K75 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 VCC5 VCC3_3 CLKOUT B_CNTX0 B_CNRX0 1 6 2 7 3 8 4 9 5 TP102 TP103 CB100 100n /SRESET /PORESET A_CNTX0 A_CNRX0 TP100 TP101 SUBD9

83977ATF

Abstract: winbond msl 83977TF marking rld bh sot 223 st ae gp 446
Contextual Info: W83977ATF WINBOND I/O W83977ATF Data Sheet Revision History Pages Dates Version Version Main Contents on Web 1 n.a. 08/25/97 0.50 First published. 2 53,54,58,63,64,65, 69,138.1,139 11/17/97 0.51 Register correction 3 1,2,3,20,45,53,63, 65,99,103,150 04/01/98

Contextual Info: ISSI IS71VPCF32XS04 3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip Package MCP — 32 Mbit Simultaneous Operation Flash Memory and 4 Mbit Static RAM MCP FEATURES • Power supply voltage 2.7V to 3.3V • High performance: PRELIMINARY INFORMATION

BGA-101P-M01

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash • Power Supply Voltage of 2.3 V to 2.7 V for FCRAM

Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

MARKING SA70

Abstract: MBM29DL324
Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-1E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in

29DL32BF

Abstract: MBM29DL32
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF 70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V

M1528

Abstract: MC-222253AF9-B85X-BT3 MC-222253A-X NEC MCP SRAM FLASH
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-222253A-X MCP MULTI-CHIP PACKAGE FLASH MEMORY AND SRAM 32M-BIT FLASH MEMORY AND 4M-BIT SRAM Description The MC-222253A-X is a stacked type MCP (Multi-Chip Package) of 33,554,432 bits (BYTE mode : 4,194,304 words by 8 bits, WORD mode : 2,097,152 words by 16 bits) flash memory and 4,194,304 bits (BYTE mode : 524,288 words

M1531

Abstract: MC-222244AF9-B85X-BT3 MC-222244A-X
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-222244A-X MCP MULTI-CHIP PACKAGE FLASH MEMORY AND SRAM 32M-BIT FLASH MEMORY AND 4M-BIT SRAM Description The MC-222244A-X is a stacked type MCP (Multi-Chip Package) of 33,554,432 bits (BYTE mode : 4,194,304 words by 8 bits, WORD mode : 2,097,152 words by 16 bits) flash memory and 4,194,304 bits (BYTE mode : 524,288 words

A039h

Abstract: 3A400
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.

4kw marking

Contextual Info: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

MARKING HRA

Abstract: 4kw marking MARKING SA70
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.8E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x16) FLASH MEMORY & 4M (×16) STATIC RAM MB84VD22180FA-70/MB84VD22190FA-70 MB84VD22180FM-70/MB84VD22190FM-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.1 V

FPT-48P-M19

Abstract: MBM29PL65LM-90 Diode SA91
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20903-1E FLASH MEMORY CMOS 64 M 4M x 16 BIT MirrorFlashTM MBM29PL65LM-90/10 • DESCRIPTION MBM29PL65LM is of 67,108,864 bit capacity +3.0 V -only Flash memory enabling word write, both across- the chip, comprehensive erase and by-the-unit, individual sector erase.