Untitled
Abstract: No abstract text available
Text: SF1601PT - SF1608PT 16.0 AMPS. Glass Passivated Super Fast Rectifiers TO-3P/TO-247AD Features Dual rectifier construction, positive center-tap Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Glass passivated chip junctions Superfast recovery time, high voltage
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SF1601PT
SF1608PT
O-3P/TO-247AD
260oC
O-3P/TO-247AD
MIL-STD-750,
SF1608PT)
50mVp-p
50Vdc
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fdms86500
Abstract: FDMS86500dc
Text: FDMS86500DC N-Channel Dual CoolTM Power Trench MOSFET 60 V, 60 A, 2.3 mΩ Features Dual Cool General Description TM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package
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FDMS86500DC
FDMS86500DC
fdms86500
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Untitled
Abstract: No abstract text available
Text: FDMS86500DC N-Channel Dual CoolTM Power Trench MOSFET 60 V, 108 A, 2.3 mΩ Features Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package
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FDMS86500DC
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Untitled
Abstract: No abstract text available
Text: FDMS86500DC N-Channel Dual CoolTM Power Trench MOSFET 60 V, 108 A, 2.3 mΩ Features Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package
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FDMS86500DC
FDMS86500DC
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Untitled
Abstract: No abstract text available
Text: FDMS86500DC N-Channel Dual CoolTM Power Trench MOSFET 60 V, 60 A, 2.3 mΩ General Description Features ̈ Dual Cool TM This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package
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FDMS86500DC
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Untitled
Abstract: No abstract text available
Text: FDMS86500DC N-Channel Dual CoolTM Power Trench MOSFET 60 V, 108 A, 2.3 mΩ Features Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package
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FDMS86500DC
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9acf
Abstract: 9acf 21cd FDMS3669S
Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 10 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally
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FDMS3669S
FDMS3669S
9acf
9acf 21cd
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ap 4604
Abstract: lcd 5421 RD15N rd13n STM-16 STM-64 STS-192 STS-48 TSOT0410G TSOT0410G1
Text: Advance Data Sheet June 2001 TSOT0410G SONET/SDH STS-192 Overhead and Path Processor Features General • Section, line, and path overhead layer termination for a SONET STS-192 SDH STM-64 or four STS-48 (STM-16) signals. ■ Supports any valid mix of STS-1 and concatenated
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TSOT0410G
STS-192
D4--D12)
DS99-270SONT
ap 4604
lcd 5421
RD15N
rd13n
STM-16
STM-64
STS-48
TSOT0410G1
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Untitled
Abstract: No abstract text available
Text: Data Sheet July 2001 TSOT0410G2 SONET/SDH STS-192 Overhead and Path Processor Features General • Section, line, and path overhead layer termination for a SONET STS-192 SDH STM-64 or four STS-48 (STM-16) signals. ■ Supports any valid mix of STS-1 and concatenated
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TSOT0410G2
STS-192
DS01-201SONT
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NDF 4003
Abstract: 5N 3011 0x830B
Text: Data Sheet May 2004 TSOT0410G4 SONET/SDH STS-192 Overhead and Path Processor Features ! Extracts and outputs, on a serial link, all transport overhead bytes in the receive data and inserts any, or all, transport overhead bytes in the transmit data using a corresponding serial input.
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TSOT0410G4
STS-192
D4--D12)
DS02-252SONT-2
DS02-252SONT-1)
NDF 4003
5N 3011
0x830B
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NDF 4003
Abstract: k312 451 lcd 5421 rd2n ap 4604 rd13n STM-16 STM-64 STS-192 STS-48
Text: Data Sheet May 2003 TSOT0410G4 SONET/SDH STS-192 Overhead and Path Processor Features • General ■ ■ ■ ■ ■ Section overhead RSOH and line overhead (MSOH) termination, and path overhead monitoring for one SONET STS-192 (SDH STM-64) or four STS-48 (STM-16) signals.
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TSOT0410G4
STS-192
STS-192
STM-64)
STS-48
STM-16)
STS-192c.
600-pin
DS02-252SONT-1
DS02-252SONT)
NDF 4003
k312 451
lcd 5421
rd2n
ap 4604
rd13n
STM-16
STM-64
STS-48
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d331 TRANSISTOR equivalent
Abstract: transistor D331 circuit diagram application 7457 frequency divider w0431 lcd power board schematic APS 252 w0456 TAG 8717 pin diagram for IC cd 1619 cr h3 0925 ge45
Text: Data Addendum May 2001 TDAT SONET/SDH 155/622/2488 Mbits/s Data Interfaces Introduction The TDAT data interface is available in three different configurations as summarized in Table 1. TDAT04622 The TDAT04622 device contains a subset of the TDAT042G5 device. The TDAT04622 device functions as
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TDAT04622
TDAT04622
TDAT042G5
DS98-193SONT-4)
OC-12
TDAT021G2
TDAT021G2
d331 TRANSISTOR equivalent
transistor D331 circuit diagram application
7457 frequency divider
w0431
lcd power board schematic APS 252
w0456
TAG 8717
pin diagram for IC cd 1619 cr
h3 0925
ge45
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RW1092
Abstract: 1033R HL250C 0465R 05B60 DLMS Protocol 0x0431
Text: Advisory, Rev. 4 March 16, 2000 TDAT042G5 Device Advisory and Data Addenda for Version 1 of the Device Changes Made in This Update The changes made to AY99-013SONT-3 are listed on page 22. References to an advance data sheet are to the TDAT042G5 SONET/SDH 155/622/2488 Mbits/s Data Interface Advance Data Sheet, Rev. 3. Revision 4 is the
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TDAT042G5
AY99-013SONT-3
DS98-193SONT-3
DS98-193TIC-02)
RW1092
1033R
HL250C
0465R
05B60
DLMS Protocol
0x0431
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700 10FB
Abstract: telcordia gr 1081 core lcd power board schematic APS 252 STR X 6750 07 k30 0452 APS 1012 h3 0925 MOTOROLA OPTOELECTRONIC TDAT04622LT motorola interface 6522
Text: Data Sheet March 2002 TDAT042G5 SONET/SDH 155/622/2488 Mbits/s Data Interface Features • ■ Point-to-point path termination device for interface termination. Versatile IC supports 155/622/2488 Mbits/s SONET/SDH interface solutions for packet over SONET POS , or asynchronous transfer mode
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TDAT042G5
DS02-129SONT
DS01-274SONT)
700 10FB
telcordia gr 1081 core
lcd power board schematic APS 252
STR X 6750
07 k30 0452
APS 1012
h3 0925
MOTOROLA OPTOELECTRONIC
TDAT04622LT
motorola interface 6522
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b.a private admission form
Abstract: ST ARM CORE 1825 0255 indala lcd 5421 1673 lucent newport 215-3 1647 lucent FIC PMX CTC ASSOCIATES scr ctc 313
Text: Preliminary Data Sheet August 2001 TAAD08JU2 Newport T1/E1/J1/J2 ATM Processor 1 Features 2 Physical System-on-a-chip integrated circuit supports lowspeed ATM access for next-generation wireless base transmission station BTS , base station controller BSC), and remote access concentrator
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TAAD08JU2
AF-PHY-00
DS01-080PDH
b.a private admission form
ST ARM CORE 1825 0255
indala
lcd 5421
1673 lucent
newport 215-3
1647 lucent
FIC PMX
CTC ASSOCIATES
scr ctc 313
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SF1608PT
Abstract: SF1601PT sf 1605 ct
Text: is TAIWAN SEMICONDUCTOR RoHS COMPLIANCE SF1601PT -SF1608PT 16.0 AMPS. Glass Passivated Super Fast Rectifiers TO-3P/TO-247AD Features A -v-$• -0-$• -$• A UL Recognized File # E-326243 Dual rectifier construction, positive center-tap Plastic package has Underwriters Laboratory
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SF1601PT
SF1608PT
O-3P/TO-247AD
E-326243
O-3P/TO-247AD
SF1608PT)
sf 1605 ct
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a2fg
Abstract: No abstract text available
Text: Chong Aluminum Electrolytic Capacitors SF Üi n°q CD288ÌU m MS,. 85'C ffiES R High frequency, 85'C Low ESR VCD. Used in color-TV, VCD, audio set switching power supply, etc. Specifications #14 Rated voltage range Performance Characteristics -40 - +85’C
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CD288Ã
120Hz,
16x25
18x40
10x13
10x16
10x20
13x20
a2fg
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Untitled
Abstract: No abstract text available
Text: TAIWAN SEMICONDUCTOR HERA1601G - HERA1608G 16.0 AMPS. Glass Passivated High Efficient Rectifiers RoH S TO-220AC C O M P L IA N C E Features 11. » «r. J G la s s p a s s iv a te d chip Junction. H igh c ffic ic n c y . Lo w VF H igh c u rre n t c s p a b ilily
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HERA1601G
HERA1608G
O-220AC
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82360sl
Abstract: CT674 sd4093 ca10 switch a007 LT1667 socket lga 1156 pinout 451 80 N02 LT1651 LT1665 u1620
Text: in te i lntel386 SL MICROPROCESSOR SuperSet Highly-Integrated Static Intel386™ SL Microprocessor Complete ISA Peripheral Subsystem System-Wide Power Management — H ig h -S p ee d P erip h eral In te rfa c e Bus P l-B u s S u p p o rt — N e w id e a P o rt In te rfa c e fo r H a rd w a re
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lntel386â
Intel386â
lntel386TM
Intel386
IOCS16*
MEMCS16*
Ct409
Ct227
82360sl
CT674
sd4093
ca10 switch a007
LT1667
socket lga 1156 pinout
451 80 N02
LT1651
LT1665
u1620
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TA8172AF
Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16
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015Z10
015Z11
015Z12
015Z2
015Z3
TA8172AF
TB 1226 BN
TA8859P
mg75n2ys40
t6961A
TA8242AK
ta8644n
7378P
ta8310
7628P
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transistor 2N4
Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION
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intel 4040
Abstract: DSP1605 5-4001 DB3C intel 4008 te 4017 tl 4013 540T2 motorola XT 1606 RM RSTB14
Text: Preliminary Data Sheet July 1995 £ 3 A TgT Microelectronics DSP1605 Digital Signal Processor • 1 Features 2 Description ■ For 5 V operation: — 25 ns instruction cycle time 40 MIPS — 30 ns instruction cycle time (33 MIPS) ■ For 3.3 V operation:
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16-bit
36-bit
intel 4040
DSP1605
5-4001
DB3C
intel 4008
te 4017
tl 4013
540T2
motorola XT 1606 RM
RSTB14
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PDF
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triac tag 8518
Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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