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    SERIAL PRESENCE DETECT SAMSUNG 2010 Search Results

    SERIAL PRESENCE DETECT SAMSUNG 2010 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TLP5212 Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler) DESAT Detection, OCP, AMC, 5000 Vrms, SO16L Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TLP5214A Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler) DESAT Detection, OCP, AMC, 5000 Vrms, SO16L Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation

    SERIAL PRESENCE DETECT SAMSUNG 2010 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    code A106

    Abstract: MD16R1628EG0-CN1 MD16R1628EG0-CT9 MD16R162GEG0-CN1 MD16R162GEG0-CT9 MD16R1624EG0-CM8 MD16R1624EG0-CN1 MD16R1624EG0-CT9 MD16R1628EG0-CM8 serial presence detect samsung 2010
    Text: MD16R1624 8/G EG0 Change History Version 1.0 (January 2004) * First copy. * Based on version 1.0 (July 2002) 256Mbit D-die 32 Bit RIMM Module Datasheet Version 1.0 Jan. 2004 MD16R1624(8/G)EG0 (16Mx16)*4(8/16)pcs 32 Bit RIMM Module based on 256Mb E-die, 32s banks,16K/32ms Ref, 2.5V


    Original     		PDF MD16R1624 256Mbit 16Mx16) 256Mb 16K/32ms code A106 MD16R1628EG0-CN1 MD16R1628EG0-CT9 MD16R162GEG0-CN1 MD16R162GEG0-CT9 MD16R1624EG0-CM8 MD16R1624EG0-CN1 MD16R1624EG0-CT9 MD16R1628EG0-CM8 serial presence detect samsung 2010

    serial presence detect samsung 2010

    Abstract: No abstract text available
    Text: MD18R3268 G AG0 Change History Version 0.1 (Sept. 2003)- Preliminary * First copy. * Based on version 1.0 (July 2002) 256/288Mbit D-die 32 Bit RIMM Module Datasheet Version 1.0 (Feb. 2004) * Eliminate “Preliminary” Version 1.0 Feb. 2004 MD18R3268(G)AG0


    Original     		PDF MD18R3268 256/288Mbit 32Mx18) 576Mb 32K/32ms serial presence detect samsung 2010

    code A106

    Abstract: MD18R3268AG0-CM8 MD18R3268AG0-CN1 MD18R3268AG0-CT9 MD18R326GAG0-CM8 MD18R326GAG0-CN1 MD18R326GAG0-CT9 serial presence detect samsung 2010 MARKING A106
    Text: Preliminary MD18R3268 G AG0 Change History Version 0.1 (Sept. 2003)- Preliminary * First copy. * Based on version 1.0 (July 2002) 256/288Mbit D-die 32 Bit RIMM Module Datasheet Version 0.1 Sept. 2003 MD18R3268(G)AG0 Preliminary (32Mx18)*8(16)pcs 32 Bit RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V


    Original     		PDF MD18R3268 256/288Mbit 32Mx18) 576Mb 32K/32ms code A106 MD18R3268AG0-CM8 MD18R3268AG0-CN1 MD18R3268AG0-CT9 MD18R326GAG0-CM8 MD18R326GAG0-CN1 MD18R326GAG0-CT9 serial presence detect samsung 2010 MARKING A106

    a106 diode

    Abstract: code A106 a105 a114 marking A93 transistor marking A21 a105 transistor A116 diode a74 marking code B92 02 diode diode A106
    Text: MD18R3268 G AG0 Preliminary 32 Bit RIMM Module Change History Version 0.1 (Sept. 2003)- Preliminary * First copy. * Based on version 1.0 (July 2002) 256/288Mbit D-die 32 bit RIMM Datasheet Version 0.1 Sept. 2003 Preliminary 32 Bit RIMM® Module MD18R3268(G)AG0


    Original     		PDF MD18R3268 256/288Mbit 32Mx18) 576Mb 32K/32ms a106 diode code A106 a105 a114 marking A93 transistor marking A21 a105 transistor A116 diode a74 marking code B92 02 diode diode A106

    M471B5673FH0-CF8

    Abstract: M471B5673FH0 ddr3 samsung M471B5673 samsung ddr3 2010 K4B1G0846F-HCF8 M471B5673fH ddr3 spd samsung DDR3 SPD
    Text: SERIAL PRESENCE DETECT M471B5673FH0-CF8/CH9/CK0 Organization : 256M x 64 Composition : 128M x 8 * 16ea Used component part # : K4B1G0846F-HCF8/CH9/CK0 # of rows in module : 2 Rows # of banks in component : 8 Banks Feature : 30mm height & double sided component


    Original     		PDF M471B5673FH0-CF8/CH9/CK0 K4B1G0846F-HCF8/CH9/CK0 8K/64ms M471B5673FH0-CF8 M471B5673FH0 ddr3 samsung M471B5673 samsung ddr3 2010 K4B1G0846F-HCF8 M471B5673fH ddr3 spd samsung DDR3 SPD

    M471B2873FHS-CF8

    Abstract: K4B1G0846F-HCF8 M471b2873fhs M471B2873FHS-C K4B1G0846F ddr3 spd samsung DDR3 SODIMM SPD JEDEC
    Text: SERIAL PRESENCE DETECT M471B2873FHS-CF8/CH9/CK0 Organization : 128M x 64 Composition : 128M x 8 * 8ea Used component part # : K4B1G0846F-HCF8/CH9/CK0 # of rows in module : 1 Row # of banks in component : 8 Banks Feature : 30mm height & double sided component


    Original     		PDF M471B2873FHS-CF8/CH9/CK0 K4B1G0846F-HCF8/CH9/CK0 8K/64ms M471B2873FHS-CF8 K4B1G0846F-HCF8 M471b2873fhs M471B2873FHS-C K4B1G0846F ddr3 spd samsung DDR3 SODIMM SPD JEDEC

    M471B1G73AH0-YF8

    Abstract: M471B1G73AH0 DDR3 sodimm 4gb samsung M471B1G samsung date code 1021H DDR3 4gb jedec spd byte ddr3 spd samsung 176-byte DDR3 SODIMM SPD JEDEC
    Text: SERIAL PRESENCE DETECT M471B1G73AH0-YF8/YH9/YK0 Organization : 1G x 64 Composition : 512M x 8 * 16ea Used component part # : K4B4G0846A-HYF8/HYH9/HYK0 # of rows in module : 2 Rows # of banks in component : 8 Banks Feature : 30mm height & double sided component


    Original     		PDF M471B1G73AH0-YF8/YH9/YK0 K4B4G0846A-HYF8/HYH9/HYK0 8K/64ms M471B1G73AH0-YF8 M471B1G73AH0 DDR3 sodimm 4gb samsung M471B1G samsung date code 1021H DDR3 4gb jedec spd byte ddr3 spd samsung 176-byte DDR3 SODIMM SPD JEDEC

    M471B1G73AH0-CF8

    Abstract: DDR3 4gb jedec spd byte samsung ddr3 DDR3 sodimm 4gb samsung K4B4G0846 M471B1G K4B4G0846A HCH9 ddr3 spd samsung 1333C
    Text: SERIAL PRESENCE DETECT M471B1G73AH0-CF8/CH9/CK0 Organization : 1G x 64 Composition : 512M x 8 * 16ea Used component part # : K4B4G0846A-HCF8/HCH9/HCK0 # of rows in module : 2 Rows # of banks in component : 8 Banks Feature : 30mm height & double sided component


    Original     		PDF M471B1G73AH0-CF8/CH9/CK0 K4B4G0846A-HCF8/HCH9/HCK0 8K/64ms M471B1G73AH0-CF8 DDR3 4gb jedec spd byte samsung ddr3 DDR3 sodimm 4gb samsung K4B4G0846 M471B1G K4B4G0846A HCH9 ddr3 spd samsung 1333C

    CF-800

    Abstract: samsung DDR3 SDRAM 2GB CF700 HCF8 M471B5273CH0 CF800 CF-700 CH900 Samsung ddr3 1600 SDRAM k4b2g0846c
    Text: SERIAL PRESENCE DETECT M471B5273CH0-CF700/CF800/CH900/CK000 Organization : 512M x 64 Composition : 256M x 8 * 16ea Used component part # : K4B2G0846C-HCF7/HCF8/HCH9/HCK0 # of rows in module : 2 Rows # of banks in component : 8 Banks Feature : 30mm height & double sided component


    Original     		PDF M471B5273CH0-CF700/CF800/CH900/CK000 K4B2G0846C-HCF7/HCF8/HCH9/HCK0 8K/64ms CF700 CF800 CH900 CK000 CF-800 samsung DDR3 SDRAM 2GB HCF8 M471B5273CH0 CF-700 Samsung ddr3 1600 SDRAM k4b2g0846c

    Untitled

    Abstract: No abstract text available
    Text: SG2567FBD12852UU October 15, 2010 Ordering Information Part Numbers Description AMB Vendor Device Vendor SG2567FBD12852SF 256Mx72 2GB , DDR2, 240-pin Fully Buffered DIMM, ECC, 128Mx8 Based, PC2-5300, DDR2-667-555, 30.35mm, Green Module (RoHS Compliant). IDT, Rev. L4


    Original     		PDF SG2567FBD12852UU SG2567FBD12852SF 256Mx72 240-pin 128Mx8 PC2-5300, DDR2-667-555, AMB0680L4RJ8 K4T1G084QF-BCE6

    Untitled

    Abstract: No abstract text available
    Text: SG5127FBD12852UU June 23, 2010 Ordering Information Part Numbers Description AMB Vendor Device Vendor SG5127FBD12852SF 512Mx72 4GB , DDR2, 240-pin Fully Buffered DIMM, ECC, 128Mx8 Based, PC2-5300, DDR2-667-555, 30.35mm, Green Module (RoHS Compliant). Label:


    Original     		PDF SG5127FBD12852UU SG5127FBD12852SF 512Mx72 240-pin 128Mx8 PC2-5300, DDR2-667-555, PC2-5300F-555-11-ZZ AMB0680L4RJ8 K4T1G084QF-BCE6

    K4T1G164QF

    Abstract: M470T5663FB3-C
    Text: Rev. 0.5, Apr. 2010 M470T2864FB3 M470T5663FB3 Preliminary 200pin Unbuffered SODIMM based on 1Gb F-die 60FBGA/84FBGA with Lead-Free & Halogen-Free RoHS compliant CAUTION : This document includes some items still under discussion in JEDEC. Therefore, those may be changed without pre-notice based on JEDEC progress.


    Original     		PDF M470T2864FB3 M470T5663FB3 200pin 60FBGA/84FBGA 128Mbx8 256Mx64 K4T1G084QF K4T1G164QF M470T5663FB3-C

    THP 100

    Abstract: No abstract text available
    Text: Rev. 1.2, Oct. 2010 M470T6464FBS M470T2863FB3 M470T2864FB3 M470T5663FB3 200pin Unbuffered SODIMM based on 1Gb F-die 60FBGA/84FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND


    Original     		PDF M470T6464FBS M470T2863FB3 M470T2864FB3 M470T5663FB3 200pin 60FBGA/84FBGA dK4T1G164QF 128Mbx8 256Mx64 THP 100

    serial presence detect samsung 2010

    Abstract: M392T5663FB M392T5663FBA
    Text: Rev. 1.0, Oct. 2010 M392T2863FBA M392T5663FBA M392T5660FBA 240pin VLP Registered DIMM based on 1Gb F-die 60 FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF M392T2863FBA M392T5663FBA M392T5660FBA 240pin serial presence detect samsung 2010 M392T5663FB

    SG1027RD351293-HA

    Abstract: SG1027RD351293 SG1027RD351293-SB
    Text: SG1027RD351293UU August 17, 2010 Ordering Information Part Numbers Description Device Vendor SG1027RD351293HA 1Gx72 8GB , DDR3, 240-pin Registered DIMM with Heat- Hynix, Rev. A spreader, Parity, ECC, 512Mx4 Based, PC3-10600, DDR3- H5TQ2G43AFR-H9C 1333-999, 30.00mm, Green Module (RoHS Compliant).


    Original     		PDF SG1027RD351293UU SG1027RD351293HA 1Gx72 240-pin 512Mx4 PC3-10600, H5TQ2G43AFR-H9C SG1027RD351293HB SG1027RD351293-HA SG1027RD351293 SG1027RD351293-SB

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO: VL466S6553B-GAS REV: 1.1 General Information 512MB 64Mx64 SDRAM PC133 NON-ECC UNBUFFERED SODIMM 144-PIN Description: The VL466S6553B is a 64M x 64 Synchronous Dynamic RAM high density memory module. This memory module consists of sixteen CMOS 32Mx8 bits with 4 banks Synchronous DRAMs in TSOP-II 400 mil


    Original     		PDF VL466S6553B-GAS 512MB 64Mx64 PC133 144-PIN VL466S6553B 32Mx8 144-pin DQ0-DQ63

    i 3005-2

    Abstract: No abstract text available
    Text: Product Specifications PART NO: VL466S6553B-GAS REV: 1.1 General Information 512MB 64Mx64 SDRAM PC133 NON-ECC UNBUFFERED SODIMM 144-PIN Description: The VL466S6553B is a 64M x 64 Synchronous Dynamic RAM high density memory module. This memory module consists of sixteen CMOS 32Mx8 bits with 4 banks Synchronous DRAMs in TSOP-II 400 mil


    Original     		PDF VL466S6553B-GAS 512MB 64Mx64 PC133 144-PIN VL466S6553B 32Mx8 144-pin DQ0-DQ63 i 3005-2

    M395T5163FB4

    Abstract: No abstract text available
    Text: Rev. 1.0, Jul. 2010 M395T2863FB4 M395T5663FB4 M395T5160FB4 M395T5163FB4 240pin Fully Buffered DIMM based on 1Gb F-die 60 FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND


    Original     		PDF M395T2863FB4 M395T5663FB4 M395T5160FB4 M395T5163FB4 240pin 128Mbx8 512Mx72 M395T5163FB4

    H5PS2G83AFR-S6C

    Abstract: CAPACITOR CK 158 VN0810 DDR2-800 PC2-6400 DDR2 samsung pc2-6400 samsung dram H5PS2G83AFR
    Text: Product Specifications PART NO.: VL491T2863B-E7S REV: 1.3 General Information 1GB 128Mx72 DDR2 SDRAM ULP ECC UNBUFFERED SO-CDIMM 200-PIN Description The VL491T2863B is a 128Mx72 DDR2 SDRAM high density SO-CDIMM. This memory module consists of nine CMOS 128Mx8 bit with 8 banks DDR2 synchronous DRAMs in BGA packages, a zero delay PLL clock in BGA package, and a


    Original     		PDF VL491T2863B-E7S 128Mx72 200-PIN VL491T2863B 128Mx8 200-pin 200-pin, VN-081009 H5PS2G83AFR-S6C CAPACITOR CK 158 VN0810 DDR2-800 PC2-6400 DDR2 samsung pc2-6400 samsung dram H5PS2G83AFR

    16MX64

    Abstract: PC2700 DTH block diagram samsung dram
    Text: Product Specifications PART NO: REV: 1.1 VL470L1624-B3S General Information 128MB 16MX64 DDR SDRAM NON-ECC UNBUFFERED SODIMM 200-PIN Description The VL470L1624 is a 16M X 64 Double Data Rate SDRAM high density SODIMM. This memory module consists of four CMOS 16Mx16 bit with 4 banks DDR Synchronous DRAMs in TSOP packages and a 2K


    Original     		PDF VL470L1624-B3S 128MB 16MX64 200-PIN VL470L1624 16Mx16 200-pin DQ0-DQ63 PC2700 DTH block diagram samsung dram

    H5PS2G83AFR-S6C

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL491T2863B-E7S REV: 1.3 General Information 1GB 128Mx72 DDR2 SDRAM ULP ECC UNBUFFERED SO-CDIMM 200-PIN Description The VL491T2863B is a 128Mx72 DDR2 SDRAM high density SO-CDIMM. This memory module consists of nine CMOS 128Mx8 bit with 8 banks DDR2 synchronous DRAMs in BGA packages, a zero delay PLL clock in BGA package, and a


    Original     		PDF VL491T2863B-E7S 128Mx72 200-PIN VL491T2863B 128Mx8 200-pin 200-pin, VN-081009 H5PS2G83AFR-S6C

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO: REV: 1.1 VL470L1624-B3S General Information 128MB 16MX64 DDR SDRAM NON-ECC UNBUFFERED SODIMM 200-PIN Description The VL470L1624 is a 16M X 64 Double Data Rate SDRAM high density SODIMM. This memory module consists of four CMOS 16Mx16 bit with 4 banks DDR Synchronous DRAMs in TSOP packages and a 2K


    Original     		PDF VL470L1624-B3S 128MB 16MX64 200-PIN VL470L1624 16Mx16 200-pin DQ0-DQ63

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.01, Dec. 2010 M471B1G73AH0 204pin Unbuffered SODIMM based on 4Gb A-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF M471B1G73AH0 204pin 78FBGA 512Mx8 1Gx64 K4B4G0846A

    M471B1G73AH0

    Abstract: K4B4G0846A M471B1G73AH0-CF8 78FBGA DDR3-1066 DDR3-1333 SSTL-15 DDR3 sodimm 8gb samsung DDR3 SODIMM SPD JEDEC
    Text: Rev. 1.0, Jul. 2010 M471B1G73AH0 204pin Unbuffered SODIMM based on 4Gb A-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF M471B1G73AH0 204pin 78FBGA 512Mx8 1Gx64 K4B4G0846A M471B1G73AH0 M471B1G73AH0-CF8 DDR3-1066 DDR3-1333 SSTL-15 DDR3 sodimm 8gb samsung DDR3 SODIMM SPD JEDEC