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AN200806

Abstract: CGR18650A CGR18650AF CGR18650 anr26650 CGR18650*af ultracapacitor A123 Systems 20Ah maxwell supercapacitor A123 ANR26650
Contextual Info: T: 450 585-6396 www.sysacom.com AN200806-01A Comparing energy density of some capacitors, ultracapacitors and batteries. By Denis Lachapelle eng. and Serge Garcia June 2008 Introduction This application note compares energy density of various energy storage components such as

znr 470

Abstract: ZNR 470 D 10 znr 270
Contextual Info: “ZNR” Transient/Surge Absorbers Type SC “ZNR” Transient/Surge Absorbers Type: SC The ZNR Type SC protects power supply facilities, communications equipment from steep lightning surges, and it is a suitable product to incorporate it in a serge protective device corresponding to the Japanese

znr 470

Abstract: ZNR 470 D 10 znr varistor varistor znr znr varistor 240 ERZ-VS34C201 53811
Contextual Info: “ZNR” Transient/Surge Absorbers Type SC “ZNR” Transient/Surge Absorbers Type: SC The ZNR Type SC protects power supply facilities, communications equipment from steep lightning surges, and it is a suitable product to incorporate it in a serge protective device corresponding to the Japanese

71917

Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Contextual Info: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller

vienna rectifier

Abstract: three phase bridge rectifier picture 10kw pfc ABB Semiconductors SCR three phase three level active front end rectifier SCR 30A 400V Motor Control Center wiring diagram abb 3.5kw pfc A Novel Three-Phase Three-Switch Three-Level PWM 2.4 kW dc to ac induction motor controller invert
Contextual Info: 35 kW Active Rectifier with Integrated Power Modules Peter Wiedemuth, HÜTTINGER Elektronik GmbH + Co. KG, Germany Serge Bontemps, Microsemi PPG power module Products, France Johann Miniböck, m-pec, Austria and ETH Zurich, power electronic systems laboratory, Switzerland

amplitude modulation applications

Abstract: LDMOS AN1223
Contextual Info: AN1223 APPLICATION NOTE RF POWER TRANSISTORS: COMPARATIVE STUDY OF LDMOS VERSUS BIPOLAR TECHNOLOGY Serge Juhel 1. ABSTRACT RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor will yield superior performance for certain

Varistor

Abstract: Serge high voltage varistor
Contextual Info: Features Featuresand andStructures Structuresof ofchip chiptype typemultilayer multilayerceramic ceramicvaristors varistors ●Multilayered ceramic composed mostly of Zinc chloride（ chloride（ZnO . ZnO). ●HighlyHighly-reliability with large serge capacitance

NM6403

Contextual Info: Image Processing SPECIAL FEATURE Implementing image compression algorithms on NeuroMatrix architecture: New approaches By Sergey Mushkaev and Sergey Landyshev This article discusses the possibilities the NM6403 processor opens up for static image compression.The authors present the Discrete Cosine Transform DCT algorithm

10Gb CDR

Abstract: BA rx transistor INF8077i Xlaui IC 555 architecture lc oscillator led based graphic equalizer ic P802 CEI-11G 11GSR
Contextual Info: Emerging Standards at ~10 Gbps for Wireline Communications and Associated Integrated Circuit Design and Validation An Invited Paper for CICC Mike Peng Li and Sergey Shumarayev Altera Corporation 101 Innovation Road San Jose, CA 95134 Abstract-We first review the signaling and jitter requirements

bang bang phase detector

Abstract: tsmc cmos 90nm "toan nguyen" PRBS23 90 nm CMOS CP-01032-1 0MV2
Contextual Info: Receiver Offset Cancellation in 90-nm PLD Integrated SERDES Simar Maangat, Toan Nguyen, Wilson Wong, Sergey Shumarayev, Tina Tran, Tim Hoang, Richard Cliff Altera Corporation, 101 Innovation Drive San Jose, CA 95134 USA Abstract– A wide-range transceiver was designed and fabricated

neosid* 10k

Abstract: neosid* 5.6k 300w fm amplifier VK200 INDUCTOR inductor vk200 88-108 rf amplifier 300w amplifier balun transformer report balun 50 ohm 100 ohm AN rf 88-108mhz
Contextual Info: AN1229 APPLICATION NOTE SD2932 RF MOSFET FOR 300W FM AMPLIFIER Serge Juhel 1. ABSTRACT This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz and using the new STMicroelectronics RF MOSFET transistor SD2932.

mosfet high power rf ldmos

Abstract: Bipolar Junction Transistor AN1223 RF MOSFET CLASS AB
Contextual Info: AN1223 APPLICATION NOTE RF POWER TRANSISTORS: COMPARATIVE STUDY OF LDMOS VERSUS BIPOLAR TECHNOLOGY Serge Juhel 1. ABSTRACT RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor will yield superior performance for certain

so8 ceramic

Abstract: AN1233 M243 M250 so8 Wire bond
Contextual Info: AN1233 APPLICATION NOTE LDMOS PACKAGES Serge Juhel 1. ABSTRACT LDMOS technology recently implemented at ST is an important step forwards, combining technological and environmental progress. In the basic LDMOS structure figure 1 , a p-epitaxial layer is grown on an

0.18-um CMOS technology characteristics

Abstract: 10Gb CDR card fci 0.18-um CMOS technology characteristics 1.2V
Contextual Info: DesignCon 2007 Digitally Assisted Adaptive Equalizer in 90 nm With Wide Range Support From 2.5 Gbps to 6.5 Gbps Now available in Stratix II GX FPGAs: www.altera.com/technology/adce Wilson Wong, Altera Corporation Tin Lai, Altera Corporation Sergey Shumarayev, Altera Corporation

vienna rectifier

Abstract: Zero crossing switching thyristors module three phase bridge rectifier picture S6 9A Diode Smd Cree SiC diode die single phase vienna rectifier rectifier diode 230V AC input and 230V DC output rectifier three phase 40a Cree SiC MOSFET design and of 1- vienna rectifier
Contextual Info: Low profile power module combined with state of the art MOSFET switches and SiC diodes allows high frequency and very compact three-phase sinusoidal input rectifiers Serge Bontemps 1 , Alain Calmels(1), Simon D. Round(2), Johann W. Kolar(2) (1) Microsemi PPG power module Products, Chemin de Magret, F-33700 Merignac

AN1683

Abstract: LMH7324
Contextual Info: ெࡔࡔॆӷ‫ິࠅ༹ڞ‬ ᆌᆩጀ๥1683 Gerrit Sergers 2007౎9ሆ ߁ຎ !!!!ॽԲডഗBࢅC‫ڦ‬ଇ߲Q๼‫؜‬৊ႜई֡ፕ‫شڟڥ‬੨ॠ !!!!ย ऺ ޿ ‫ ۉ‬ୟ ӱ ణ ‫ ڦ‬๟ ᄇ ๖ ‫ ټ‬R S P E C L ๼ ‫ڦ ؜‬ ֪ഗ‫ڦ‬๼‫؜‬ă ӝECL ݀พट᳘ࢇஇड ঳ࠓ‫ڦ‬๼‫૶؜‬ሞ

Contextual Info: Anti-Serge Thick Film Chip Resistors Anti-Serge Thick Film Chip Resistors 1206 Type: ERJP08 • Features ● Characteristic:Better the Anti-Serge characteristic than the metal film resistor ● High reliability Metal glaze thick film resistive element and three layers of electrodes result in high reliability

PCIM

Abstract: Novel Trench Gate Structure Developments Set the Benchmark for Next Generation Power MOSFET Switchi trench TEOS oxide layer PCIM 177 Si4390DY Si4392DY Si7390DP Si7392DP trench ultra low power mosfet fast switching
Contextual Info: Presented at PCIM Europe 2003 International Conference and Exhibition, May 20-22, Nuremberg, Germany Novel Trench Gate Structure Developments Set the Benchmark for Next Generation Power MOSFET Switching Performance. Jess Brown, Serge Jaunay and Mohamed Darwish

APT0405

Abstract: TRANZORB IGBT parallel DRIVE OSCILLATION GE215 g3 diode "ADVANCED POWER TECHNOLOGY EUROPE" SP6 CASE TO SINK SP6 CASE TO SINK THERMAL RESISTANCE "SP6 CASE TO SINK" THERMAL RESISTANCE capacitor RG
Contextual Info: Application note APT0405 November 2004 Parallel Connection of IGBT and MOSFET Power Modules. Serge Bontemps Product Manager Advanced Power Technology Europe Chemin de Magret 33700 Merignac, France Introduction Several dice are usually connected in parallel within high current power modules.

inductor vk200

Abstract: RTL 602 W 300w fm amplifier neosid* 10k VK200 INDUCTOR VK200 inductor of high frequencies neosid "RF MOSFET" 300W 300 ohms balun 300w amplifier
Contextual Info: AN1229 APPLICATION NOTE SD2932 RF MOSFET FOR 300W FM AMPLIFIER Serge Juhel 1. ABSTRACT This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz and using the new STMicroelectronics RF MOSFET transistor SD2932.

Signal Path Designer

Contextual Info: DesignCon 2010 Offset Cancellation in Receiver Path in 45-nm 6.5-Gbps Transceiver FPGAs Tina Tran, Altera Corporation Email: ttran@altera.com Doris Chan, Altera Corporation Email: dchan@altera.com Sergey Shumarayev, Altera Corporation Email: sshumara@altera.com

D4364c-15L

Abstract: NEC D4364C d4364c d4364c-15 TC5564APL-15 78L05 NEC Hyundai Semiconductor hy6264 hy6264ap-10LL GoldStar gm76c88al GoldStar gm76c88al-15
Contextual Info: Technical Report UCAM-CL-TR-536 ISSN 1476-2986 Number 536 Computer Laboratory Low temperature data remanence in static RAM Sergei Skorobogatov June 2002 15 JJ Thomson Avenue Cambridge CB3 0FD United Kingdom phone +44 1223 763500 http://www.cl.cam.ac.uk/ c 2002 Sergei Skorobogatov

Contextual Info: “ZNR” Transient/Surge Absorbers Type SC “ZNR” Transient/Surge Absorbers Type: SC The ZNR Type SC protects power supply facilities, communications equipment from steep lightning surges, and it is a suitable product to incorporate it in a serge protective device corresponding to the Japanese

pll 02 a

Abstract: 800E-02 finite state machine frequency detection using FPGA
Contextual Info: DesignCon 2009 Method and Apparatus of Continuous PLL Adaptation to Variable Reference Input Frequency Tim Hoang, Altera Corporation Sergey Shumarayev, Altera Corporation Kazi Asaduzzaman, Altera Corporation Leon Zheng, Altera Corporation CP-01051-1.0 February 2009