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    SEMTECH ELECTRONICS BA282 Search Results

    SEMTECH ELECTRONICS BA282 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCR3DG28
    Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 300 mA, WCSP4E Visit Toshiba Electronic Devices & Storage Corporation
    TCKE812NA
    Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, Fixed Over Voltage Clamp, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TK2R4A08QM
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 100 A, 0.00244 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQH
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    CUZ30V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 30 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    SEMTECH ELECTRONICS BA282 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BA282

    Abstract: BA283
    Contextual Info: BA282, BA283 SILICON EPITAXIAL PLANAR DIODE SWITCHES for electronic band-switching in radio and TV tuners in the frequency range of 50 to 1000 MHz. The dynamic forward resistance is constant and very small over a wide range of frequency and forward current. The reverse capacitance is


    Original
    BA282, BA283 BA282 BA282 BA283 PDF

    BA282

    Abstract: SEMTECH ELECTRONICS BA282 BA283
    Contextual Info: BA282, BA283 SILICON EPITAXIAL PLANAR DIODE SWITCHES for electronic band-switching in radio and TV tuners in the frequency range of 50 to 1000 MHz. The dynamic forward resistance is constant and very small over a wide range of frequency and forward current. The reverse capacitance is


    Original
    BA282, BA283 BA282 BA282 SEMTECH ELECTRONICS BA282 BA283 PDF