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    SEMTECH ELECTRONICS 13003 Search Results

    SEMTECH ELECTRONICS 13003 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    SEMTECH ELECTRONICS 13003 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    13003 TRANSISTOR

    Abstract: st 13003 TRANSISTOR npn transistor 13003 13003 ST 13003 w 13003 npn transistor ST 13003 w W 13003 TRANSISTOR transistor ST 13003 w, TO-220 13003 to-220
    Text: ST 13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. The transistor is subdivided into one group according to its DC current gain. TO-220 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol


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    PDF O-220 13003 TRANSISTOR st 13003 TRANSISTOR npn transistor 13003 13003 ST 13003 w 13003 npn transistor ST 13003 w W 13003 TRANSISTOR transistor ST 13003 w, TO-220 13003 to-220

    ST-13002

    Abstract: 13002l 13003l ST-13002l 13003 st13002 ST13003L transistor 13003l 13002 ST-13002* characteristics
    Text: ST 13002L / ST 13003L NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. These transistors are subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    PDF 13002L 13003L O-92L ST13002L ST13003L Ran3003L ST-13002 13003l ST-13002l 13003 st13002 ST13003L transistor 13003l 13002 ST-13002* characteristics

    13003z

    Abstract: 13003
    Text: ST 13003Z NPN Silicon Epitaxial Planar Transistor for power switching applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 450 V Emitter Base Voltage VEBO 9 V IC 1.3


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    PDF 13003Z O-251 13003z 13003

    13003T

    Abstract: ST-13002 ST13002 transistor 13003t
    Text: ST 13002T / ST 13003T NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching


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    PDF 13002T 13003T O-126 ST13002T ST13003T 13003T ST-13002 ST13002 transistor 13003t

    13003T

    Abstract: ST-13002 transistor 13003t ST13002 13002T 13003 IC regulator st13003t R/slt 13003t
    Text: ST 13002T / ST 13003T NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching


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    PDF 13002T 13003T O-126 ST13002T ST13003T 13003T ST-13002 transistor 13003t ST13002 13003 IC regulator st13003t R/slt 13003t

    13003 TRANSISTOR

    Abstract: transistor 13003 st 13003 TRANSISTOR npn 13003 transistor ST 13003 w, TO-220 W 13003 TRANSISTOR st 13003 w 13003 power transistor 13003 TRANSISTOR npn 13003 npn
    Text: ST 13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. The transistor is subdivided into one group according to its DC current gain. TO-220 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol


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    PDF O-220 13003 TRANSISTOR transistor 13003 st 13003 TRANSISTOR npn 13003 transistor ST 13003 w, TO-220 W 13003 TRANSISTOR st 13003 w 13003 power transistor 13003 TRANSISTOR npn 13003 npn

    13002l

    Abstract: 13003l ST-13002 ST13002 038g transistor 13003l 13003 st13003l
    Text: ST 13002L / ST 13003L NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. These transistors are subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    PDF 13002L 13003L O-92L ST13002L ST13003L Range03L 13003l ST-13002 ST13002 038g transistor 13003l 13003 st13003l

    ST-13002

    Abstract: 13003T ST13002 transistor 13003t ST13002T 13002T
    Text: ST 13002T / ST 13003T NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching


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    PDF 13002T 13003T O-126 ST13002T ST13003T ST-13002 13003T ST13002 transistor 13003t ST13002T

    13002

    Abstract: 13003 13003 TRANSISTOR transistor 13002 13002 TRANSISTOR transistor 13003 transistor 13003 A c s 13003 TRANSISTOR 13002 and 13003 power transistor SD13003
    Text: SD13002 / SD13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. These transistors are subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    PDF SD13002 SD13003 O-92L 100mA 13002 13003 13003 TRANSISTOR transistor 13002 13002 TRANSISTOR transistor 13003 transistor 13003 A c s 13003 TRANSISTOR 13002 and 13003 power transistor SD13003

    13002 TRANSISTOR

    Abstract: transistor 13002 13003 TRANSISTOR 13002 13003 transistor 13003 13002 and 13003 power transistor c s 13003 TRANSISTOR BR 13003 W 13003 TRANSISTOR
    Text: SD13002 / SD13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. These transistors are subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    PDF SD13002 SD13003 O-92L 100mA 13002 TRANSISTOR transistor 13002 13003 TRANSISTOR 13002 13003 transistor 13003 13002 and 13003 power transistor c s 13003 TRANSISTOR BR 13003 W 13003 TRANSISTOR

    transistor 13002

    Abstract: 13003 TRANSISTOR 13003 13002 TRANSISTOR 13002 transistor 13003 13002 and 13003 power transistor BR 13003 sd13003 W 13003 TRANSISTOR
    Text: SD13002 / SD13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. These transistors are subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    PDF SD13002 SD13003 O-92L 100mA transistor 13002 13003 TRANSISTOR 13003 13002 TRANSISTOR 13002 transistor 13003 13002 and 13003 power transistor BR 13003 sd13003 W 13003 TRANSISTOR

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


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    PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N