SEMTECH 1N5420 Search Results

5d 3kv

Abstract: equivalent components of diode 1N4249 Semtech alpac alpac scba2 SCPA2 single phase half controlled full wave bridge rec semtech kv-pac SI96-01 2PFT2 SCBAR4F
Contextual Info: Semtech Corporation Power Discretes This publication presents technical information for the several product families that comprise the Semtech Corporation Power Discretes Product-Lines. The families include Hi-Rel qualified rectifiers, bridges, ceramic capacitors, transient voltage

semtech alpac

Abstract: 4011 JANTX 1N5619 semtech JANS1N5806 JANTX 1N5617 JANS1N5550 JANS1N5620 JANS 4011 datasheet mil-prf-19500-427
Contextual Info: JANS Certified and Space level screening HR500S Hi-Reliability Devices Semtech Corporation offers a complete line of Hi-Reliability devices in modern production facilities in Reynosa, Mexico with Corporate Headquarters in Camarillo, California. Semtech products are, by design, capable of meeting the most severe

2KV DIODE

Abstract: semtech alpac three phase full wave uncontrolled rectifier sdhd5k 1N6467 fast recovery diode 1a trr 200ns SCPA2 1N6123 JAN 1N6463 JANTX 73A 552
Contextual Info: Semtech Corporation Power Discretes This publication presents technical information for the several product families that comprise the Semtech Corporation Power Discretes Product-Lines. The families include Hi-Rel qualified rectifiers, bridges, ceramic capacitors, transient voltage suppressors and custom assemblies. These are available in a variety of packages. Complete device specifications and typical

600v

Abstract: 1N5415 1N5420 3SF05 semtech 1N5420 Up rectifier
Contextual Info: RECTIFIER, up to 600V, 4.5A, 150-400ns January 7, 1998 1997 SEMTECH CORP. 1N5415 thru 1N5420 3SF05 thru 3SF6 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com 652 MITCHELL ROAD NEWBURY PARK CA 91320 RECTIFIER, up to 600V, 4.5A, 150-400ns 1N5415 thru 1N5420

LN5420

Abstract: JAN 1N5415 1N5416 1N5415 1N5418 1N5419 1N5420 3SF05 3SF2 JANtx 1N5415
Contextual Info: 5ÖE SEMTECH CORP 613^ 13^ D 00025^3 ETT • 1N5415 thru 1N5420 3SF05 thru 3SF6 FAST RECOVERY AXIAL LEADED HERMETICALLY SEALED SUPERFAST RECTIFIER DIODE QUICK REFERENCE DATA • • • • • • Vr = 50 - 600V • If = 4.5A • trr = 150 - 400nS • Ir = l.OjiA

High-Rel Discrete Semiconductors

Abstract: fast recovery diode 1000v 10A fast recovery diode 400v 5A fast recovery diode 600v 5A IN4954 150a 400v diode bridge diode 50v 5A 3-Phase Full-Wave Bridge Rectifier Zener Diode Glass 50v DIODE RECTIFIER BRIDGE SINGLE 55a 600v
Contextual Info: 2010 Catalog High-Rel Discrete Semiconductors Assembly Products Semtech’s Strategy in Discrete Products is to supply devices, either in axial, surface-mount or custom assembly configurations, that are rugged in design and in packages that are both hermetic and varied

1N5551

Abstract: 1N5615 PM8800 204G4
Contextual Info: SEMTECH CORP 34E D • 013113^ 0002211 764 « S E T AXIAL LEA D ED D IS C R E T E R E C T IF IE R S cont. ABSOLUTE MAXIMUM RATINGS (@25°C UNLESS OTHERWISE SPECIFIED) Device Type Reverse Voltage V rwm Volts Forw ard Current @ 5 5 °C V rrm Volts If -pel)

SCDA6

Abstract: semtech rectifier bridge SCH25000 rectifier 400V 5A Full-Wave Bridge Rectifier SCBAR4F sdhd5k SC3BK4F SCDA4F 1N5415
Contextual Info: 2008 Axial Rectifiers PART NUMBERS DESCRIPTION 1N5415 through 1N5420 Fast recovery axial rectifier, 50V - 600V, Io=4.5A 1N5550 through 1N5554 1N5614, 1N5616, 1N5618, 1N5620, 1N5622 Standard recovery axial rectifier, 200V - 1000V, Io=5.0A Standard recovery axial rectifier, 200V - 1000V, Io=2.0A

1N5416

Abstract: 1N542
Contextual Info: 1N5415 THRU 1N5420 3SF05 THRU 3SF6 Axial Leaded Hermetically Sealed Fast Rectifier Diode POWER DISCRETES Description Features Quick reference data ‹ ‹ ‹ ‹ ‹ VR = 50 - 600V IF = 4.5A trr = 150 - 400nS IR = 1.0µA Very low reverse recovery time Hermetically sealed in fused metal oxide

1N5416

Abstract: JANtx 1N5415 1N5415 1N5417 1N5418 1N5419 1N5420 3SF05 1N5418 JANTXV 5417
Contextual Info: 1N5415 THRU 1N5420 3SF05 THRU 3SF6 Axial Leaded Hermetically Sealed Fast Rectifier Diode POWER DISCRETES Description Features Quick reference data Very low reverse recovery time Hermetically sealed non-cavity construction. Low switching losses Low forward voltage drop

fast recovery diode 600v 5A

Abstract: 1N5416 JANtx 1N5415 DIODE H 5 N 1N5415 1N5417 1N5418 1N5419 1N5420 3SF05
Contextual Info: 1N5415 THRU 1N5420 3SF05 THRU 3SF6 Axial Leaded Hermetically Sealed Fast Rectifier Diode POWER DISCRETES Description Features Quick reference data ‹ ‹ ‹ ‹ ‹ VR = 50 - 600V IF = 4.5A trr = 150 - 400nS IR = 1.0µA Very low reverse recovery time Hermetically sealed in fused metal oxide

1N5416

Abstract: 1N542
Contextual Info: 1N5415 THRU 1N5420 3SF05 THRU 3SF6 Axial Leaded Hermetically Sealed Fast Rectifier Diode POWER DISCRETES Description Features Quick reference data Very low reverse recovery time Hermetically sealed in fused metal oxide Low switching losses Low forward voltage drop

1N5416

Contextual Info: IDIOTI i s t i RECTIFIER, up to 600V, 4.5A, 150-400ns January 7, 1998 1N5415 thru 1N5420 3SF05 thru 3SF6 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com A XIA L LEADED HERMETICALLY SEALED SUPERFAST RECTIFIER DIODE QUICK REFERENCE DATA Very low reverse recovery time

Contextual Info: 1N5415thru 1N5420 3SF05 thru 3SF6 RECTIFIER, up to 600V, 4.5A, 150-400ns January 7, 1998 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com A XIA L LEADED HERMETICALLY SEALED SUPERFAST RECTIFIER DIODE QUICK REFERENCE DATA Very low reverse recovery time

Diode 1N4947

Abstract: 1N4946 3SF05 Diode 1N4946 DIODE S2F 1N542 1N4948 JTX
Contextual Info: FAST RECOVERY RECTIFIER DIODES < 1000V cont I(AV) nominal (Amps) OUTLINE DRAWING VRWM 1.7A-2.5A G88 G2 2.6A-4.5A G2 G83 G83 G4 (V) 50V 100V 1N4942 200V 1N4943 400V 1N4944 500V 1N4945 600V 1N4946 800V PF8 1N4947 1000V PFO F/FX 1N4948 trr (nS) 300 150-500

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

MIL-S-19500

Abstract: 59-61 m19500483 JTX 1N5811 MIL-S-19500/359
Contextual Info: Standard MIL-Specification Approvals European Military Approvals The following discrete rectifiers documented in this catalog are fully approved in accordance with MIL-S-19500. The following devices are qualified in Europe to DEF STAN 59-61 part 80 or part 90.

g4 pc 50 w

Contextual Info: !D ^ trU lM ^ C = 0 AXIAL LEADED DISCRETE RECTIFIERS cont. ABSOLUTE MAXIMUM RATINGS (@25 C UNLESS OTHERW ISE SPECIFIED) TEL: 805-498-2111 D evice Type R everse V oltage V fiwm V hhm F o rw ard C urrent @ 55 C li (AV) R everse R ec­ overy 1 C ycle S urg e

as15f

Abstract: L-12-OV-5 LAS1605 pac010 AS-15f LAS14AU F25KS 2PFT05 E82A LAS6321P
Contextual Info: TEL: 805-498-2111 FAX : 805-498-3804 Part Num ber V rw m I f a v » Trr Q u a lifie d To EZ1082 . EZ1083 . P age . 4 . . P a rt Num ber V rw m L A S -1505 . I f (a v Trr Q u a lifie d To P age P art N u m be r U S -6 3 2 0 P VflW M