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    SEMIX402GB066HD Search Results

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    SEMIX402GB066HD Price and Stock

    SEMIKRON SEMIX402GB066HDS

    Igbt Module, Dual, 600V, 530A; Continuous Collector Current:530A; Collector Emitter Saturation Voltage:1.45V; Power Dissipation:45W; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:600V Rohs Compliant: Yes |Semikron SEMIX402GB066HDS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SEMIX402GB066HDS Bulk 6
    • 1 -
    • 10 $138.57
    • 100 $126.69
    • 1000 $126.69
    • 10000 $126.69
    		Buy Now
    RS SEMIX402GB066HDS Bulk 1
    • 1 $536.56
    • 10 $493.63
    • 100 $493.63
    • 1000 $493.63
    • 10000 $493.63
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    Richardson RFPD SEMIX402GB066HDS 1
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    SEMIKRON SEMIX402GB066HDS 27891100

    Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SEMIX402GB066HDS 27891100 1
    • 1 $418.57
    • 10 $330.34
    • 100 $297.51
    • 1000 $297.51
    • 10000 $297.51
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    SEMIX402GB066HD Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SEMIX402GB066HD Semikron Trench IGBT Modules Original PDF
    SEMIX402GB066HDS Semikron Trench IGBT Modules Original PDF

    SEMIX402GB066HD Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX402GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 600 V Tc = 25°C 509 A Tc = 80°C 383 A 800 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25°C 543 A Tc = 80°C 397 A ICRM = 2xICnom VGES SEMiX 2s Trench IGBT Modules


    Original     		SEMiX402GB066HDs PDF

    cal 3200

    Abstract: No abstract text available
    Text: SEMiX402GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 509 A Tc = 80 °C 383 A 400 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 2xICnom 800 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C


    Original     		SEMiX402GB066HDs E63532 cal 3200 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX402GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 502 A Tc = 80 °C 379 A 400 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 800 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C


    Original     		SEMiX402GB066HDs PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX402GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 502 A Tc = 80 °C 379 A 400 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 800 A -20 . 20 V 6 µs -40 . 175 °C


    Original     		SEMiX402GB066HDs E63532 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX402GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 502 A Tc = 80 °C 379 A 400 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX402GB066HDs VGES tpsc Tj ICRM = 2xICnom VCC = 360 V


    Original     		SEMiX402GB066HDs SEMiX402GB066HDs E63532 PDF

    current source inverter

    Abstract: No abstract text available
    Text: SEMiX402GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 509 A Tc = 80 °C 383 A 400 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 2xICnom 800 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C


    Original     		SEMiX402GB066HDs E63532 B100/125 R100exp B100/125 1/T-1/T100) current source inverter PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    SEMIX353GB126V1

    Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
    Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots


    Original     		SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 PDF