skm 151 mosfet
Abstract: No abstract text available
Text: Section 5: SEMITRANS M Power MOSFET Power MOSFET Modules Type" V ds T=25 C Pd Rin,c C ase C ircuit SEMITRANS® M1 Case D 20 SEMITRANS^ M2 Cases D 48 / D 49 Cases D 42. 44 SEMITRANS® M3 = 25 C A m ii W °C /W 50 2 00z 3,5 700 0,18 D 15 S K M 1 0 1 R ZR
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SKM100GB101D
Abstract: SKM200GB122D SKM40GD121D SKM200GB102D SKM400GA122D SKM400GA102D SKM75GB121D SKM40GD101D 40GD101D SKM150GB122D
Text: s e m ik r d n SEMITRANS IGBT Modules 1000 to 1700 V Cross Reference List Previous to Actual Types 1 Case width) Sixpacks SEMITRANS 6 (45 mm) DUALS SEMITRANS 2 (34 mm) SK-BOOK ’90 / SUPPL. 91 1989-1991 SKM 15GD100D SK-BOOK ’92/'93 1992-1995 SKM 22GD101D
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15GD100D
25GD100D
22GD101D
22GD121D
40GD101D
40GD121D
40GB101D
40GB121D
50GB101D
50GB121D
SKM100GB101D
SKM200GB122D
SKM40GD121D
SKM200GB102D
SKM400GA122D
SKM400GA102D
SKM75GB121D
SKM40GD101D
SKM150GB122D
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din 7985
Abstract: SKM100GB063D SK 200 GAR 125 schaltung Mosfet wacker SKM181A3 if2t SKM151 SKM181
Text: 5. SEMITRANS M Leistungs-MOSFET Module Besondere Merkmale Typische Anwendungen Leistungs-MOSFET Module • N-Kanal-Anreicherungstyp • Schaltnetzteile • Kurze innere Verbindungen verhindern • Selbstgeführte Wechselrichter • Gleichstrom-Servo- und Roboter-Antriebe
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SKHI 20
Abstract: semikron SKHI 22 AR skm 191 SKM284F skm 151 mosfet skm 191 mosfet skm 22 gal 121 SKM 300 GA 102 D skm 75 101 SKM 40 GD 101 D
Text: s e MIKRDn Section 6: SEMITRANS M Power MOSFET and IGBT Modules Summary of Types Power M O SFET Modules Types 1 Circuit V ds Id RDS on) Pd Tease j T j = 25 °C Tease = 25 °C = 25 CC ! max. I W A m il Rthjc Case Page °c/w New type V • SKM 101 AR 50 200
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SKM151F
Abstract: skm 151 mosfet
Text: s e MIKRO n 500 V SEMITRANS M Power MOSFET Modules SKM 151 F 500 V • Discontinued 1998 56 224 A A Absolute Maximum Ratings Symbol Conditions V ds V dgr Res Values ' = 2 0 ki2 Id Id m V gs Pd Tj, Tstg Visol humidity climate Units ±20 V 700 W 5 5 . . .+ 1 5 0
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B5-22
SKM151F
skm 151 mosfet
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Untitled
Abstract: No abstract text available
Text: S E t llK R O N 3bE D IN C VcES VcGR Ic IC M V ges Ptot Tj, Tstg Vlsol humidity climate fll3bb?l QQG2S41 1 « S E K û 5EMIKRDN Absolute Maximum Ratings Symbol • Conditions ' -T - 3 3 SEMITRANS M IGBT Modules
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QQG2S41
013bfe
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SKM100GB063D
Abstract: SEMIKRON type designation din 7985 paralleling mosfet mosfet base induction heat circuit SKM151 the calculation of the power dissipation for the igbt and the inverse diode in circuits high frequency welder circuit diagram semikron IGBT skm100gb063d SKM 200 CIRCUIT
Text: Section 5. SEMITRANS M Power MOSFET Modules Features Typical Applications Power MOSFET Modules • N channel, enhancement mode • Switched mode power supplies • Short internal connections avoid ringing • Self-commutated inverters • Switching kW's in less than 1 µs
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Untitled
Abstract: No abstract text available
Text: s e m ik r o n Absolute Maximum Ratings Sym bol V ds V dgr Id Idm V gs Pd C onditions ' R qs = 20 k fi humidity climate Units 100 V V lo o AC, 1 min DIN 40 040 DIN IEC 68 T.1 SEMITRANS M Power M OSFET Modules SKM 111 AR A A 200 600 ±20 700 55 . . .+150
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skm 50 z 100 R
Abstract: No abstract text available
Text: s e M IK R O N SEMITRANS^ M Power MOSFET Modules Absolute Maximum Ratings Symbol Conditions V ds V R gs dgr = 20 k i2 Id Id m V gs P d Tj, Tstg V is o l h u m id ity clim a te Values Units 200 200 130 390 + 15 A R : ± 20; R ZR - 0.3 700 - 5 5 . . .+150 2 500
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SKM121
skm 50 z 100 R
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Untitled
Abstract: No abstract text available
Text: s e m ik r o n SEMITRANS M Power MOSFET Modules 120 A, 200 V, 17 m fl Absolute Maximum Ratings Symbol Conditions 1 V ds V dgr Id R gs = 20 kQ Values 200 200 120 87 360 ±20 500 55 . . .+150 2 500 Class F 55/150/56 Tease = 25 °C Tease = 85 °C Idm V gs Pd
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13bb71
120B251
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servo iai
Abstract: RGS400 SKM181F
Text: SEMIKRON Absolute Maximum Ratings Symbol Conditions ' Values Rgs = 20 k ii Id Id m Vg s Pd T j, Tstg Visol humidity climate V V A A V 800 800 34 136 ±20 700 55. .,+150 2 500 Class F 55/150/56 Vds V dgr Units AC, 1 min DIN 40 040 DIN IEC 68 T.1 SEMITRANS M
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Untitled
Abstract: No abstract text available
Text: s e MIKRO n Absolute Maximum Ratings Symbol Conditions ' Values V ds V dgr Id Id m V gs = 20 k n Tease — 25 °C Tease — 100 °C 10 MS Rgs Pd T|, Tstg V isoi humidity climate AC, 1 min DIN 40 040 DIN IEC 68 T.1 SEMITRANS M Power MOSFET Modules 450 A, 200 V, 4,3 mû
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SKM191F
Abstract: skm 191 skm 191F semikron skm 191
Text: s e M IK R D n SEMITRANS M Power MOSFET Modules Absolute Maximum Ratings Symbol Conditions V ds V dgr R g s = 20 k n Id I dm V gs Pd T . Tstg Visol h u m id ity c lim a te A C , 1 m in , 200 |iA DIN 4 0 040 DIN IE C 6 8 T .1 Values Units 1000 1000 28 110
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Untitled
Abstract: No abstract text available
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Units SEMITRANS M
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D8050
Abstract: No abstract text available
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Units SEMITRANS M
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SEMIKRON INTERNATIONAL
Abstract: M100
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Units SEMITRANS M
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skm 191 mosfet
Abstract: skm 151 mosfet SKM 181 R skm 141 ar zener DIODE D49 skm 181 mosfet SKM 200 CIRCUIT SKM 121 R semikron skm 191 skm 191
Text: Section 5: SEMITRANS M Power MOSFET Modules V ds Type ’ ’ ▲New type SKM SKM SKM SKM SKM SKM SKM A SKM SKM SKM SKM SKM SKM SKM SKM SKM SKM SKM SKM A SKM SKM SKM SKM SKM SKM SKM SKM V 101 AR 101 RZR 111 AR 111 RZR 450A010 121 A R 121 RZR 180A020 450A020
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450s1
D15/D45
450A010
180A020
450A020
120B020
240B020
310B020
240M020
310M020
skm 191 mosfet
skm 151 mosfet
SKM 181 R
skm 141 ar
zener DIODE D49
skm 181 mosfet
SKM 200 CIRCUIT
SKM 121 R
semikron skm 191
skm 191
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Untitled
Abstract: No abstract text available
Text: 51E D • Ô13bb71 00035^0 T7T « S E K G SEMIKRON SEMIKRON INC SEMITRANS M Power MOSFET Modules Absolute Maximum Ratings Symbol Values . Conditions1 V ds V dgr Id Idm V gs Pd T], Tstg Visol humidity climate Units V V A A V W 80 0 80 0 34 136 ±20 700 5 5 . . .+ 150
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13bb71
0003b00
l3bb71
QQ03bai
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D73 -Y
Abstract: skm 75 gb 101 d skm 100 gb 101 d skm 50 gb 100 d semikron skm 300 gar 123 SKM 22 GD 101 D SKM 40 GD 101 D skm 40 gb 123 d SKM 300 CIRCUIT cemi data
Text: 5EMIKRDN Section 6: SEMITRANS IGBT Modules; New Range 1996 3rd Version: Low Inductance, lower Vc e m . soft and fast CAL diodes11 41 Type 2 VcES 2) lc = 25 °C 0 Teas« = V 1200 SKM 300 GA 123 D 1200 SKM 300 GA 173 D 1700 SKM 400 G A 123 D 5) 1200 SKM 400 G A 173 D 5> 1700
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Semikron sk 51
Abstract: No abstract text available
Text: s e m ik r d n Absolute Maximum Ratings Symbol Conditions 1 Values Vos V dgr Id Vgs Po humidity climate V V A A V 200 200 130 3 90 ± 20 700 55 . . .+150 2 500 R g s = 20 k ß Id m Tj, T S|g Visol Units A C , 1 min D IN 4 0 0 4 0 D IN I E C 6 8 T.1 SEMITRANS M
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Untitled
Abstract: No abstract text available
Text: SEMIKRON INC 15E D I fll3 b b ? l T _3ct Symbol Conditions 1 R gs V dgr = 20 k f l Id Idm V gs Pd T j.T s lg Vlsol humidity climate AC, 1 min, 200 |xA DIN 40 040 DIN IEC68T.1 SI SEMIKRON Absolute Maximum Ratings V ds ÜGOim ^ SEMITRANS M Power MOSFET Modules
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IEC68T
01tS2
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b544
Abstract: 431000A skm 254 f
Text: s e MIKRDn Absolute Maximum Ratings Symbol V ds V dgr Id Idm V qs Pd Conditions1' Rgs = 20 k ii Tj, Tstg Visol humidity climate AC, 1 min DIN 40 040 DIN IEC 68 T.1 Values Units 500 500 35 140 ±2 0 400 - 5 5 . . .+150 2 500 Class F 55/150/56 V V A A SEMITRANS M
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B5-44
b544
431000A
skm 254 f
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B539
Abstract: B539B skm 151 mosfet SKM 181 R B-539 SKM254F SKM151F SKM 181 c SKM 121 R skm 181 mosfet
Text: s em ik r o n Section 5: SEMITRANS M Power MOSFET Modules Summary of Types Types’ * Circuit V ds Id Tease = 25 °C • New type V A RDS on Tj Pd Rthjc Case Page B 5 -3 = 25 °C Tease max. = 25 °C mS2 W °C/W 100 200 700 0,18 D 15 200 130 20 700 0,18
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SKM111
B5-18
SKHI21
B539
B539B
skm 151 mosfet
SKM 181 R
B-539
SKM254F
SKM151F
SKM 181 c
SKM 121 R
skm 181 mosfet
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Untitled
Abstract: No abstract text available
Text: s e M IK R O n Absolute Maximum Ratings Symbol Conditions ' Values Units 50 V 50 V V ds V dgr Res = 2 0 kQ Tease = 5 5 °C 200 A I dm 600 A V gs ±20 V Id Pd Tj, Tstg Visol A C , 1 min humidity climate D IN 4 0 0 4 0 400 W - 5 5 . . .+ 1 5 0 °C V 2 500 SEMITRANS M
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fll3bb71
B5-33
M204A
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