skm 152 ga 123
Abstract: semikron skm 152 ga 123 SKM 75 GAL 123 IGBT skm 50 gb 101 d skm 152 ga SKM 200 GB 102 D semikron skm 152 ga skm 50 gb 100 d skm 100 gb 101 d skm 22 gal 123
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Diodes IF= – IC IFM= – ICM IFSM I2t Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040
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datasheet gal 120 05 td
Abstract: semikron IGBT 400A 600v
Text: SKM 600 GAL 126 DT . Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICM VGES Tj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IF = –IC Tcase = 25 (80) °C
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SKM 75 Gb 124 IGBT
Abstract: SKM 400 gal 124 IGBT SKM 25 GD SKM 40 GD 121 D SKM 40 GD 101 D IGBT cross reference semikron skm 40 gd 121 skm 75 gb 101 d skm 40 gd 121 skm 40 gb 124 d skm 50 gb 100 d
Text: SEMITRANS IGBT Modules Packaging, ESD Protection and Mounting Hardware * The SEMITRANS IGBT Modules are electrostatic-sensitive devices ESD). They are ESD-protected and packaged in SEMIBOX, i.e. corrugated paper boxes with L x W x H = 190 x 140 x 30 mm resp. 53 mm hight. See SEMIKRON
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skm 200 GB 12 V
Abstract: SKM 300 CIRCUIT SKM 75 GAL 123 IGBT SKM 200 GAL 173 D IGBT SKM 300 GB 12 V skm 40 gb 123 d semikron skm 150 gb 123 SKM 200 CIRCUIT skm 22 gal 123
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 8) Inverse Diode IF= – IC
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SKM 75 GAL 123 IGBT
Abstract: skm 200 GB 12 V SKM 300 GB 12 V semikron skm 300 gar 123 SKM 300 CIRCUIT GAL 200 gb semikron skm 150 gal skm 125 ga 123
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC Tcase = 25/80 °C
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skm 152 ga 123
Abstract: semikron skm 152 ga 123 semikron skm 152 ga skm 152 ga SKM 300 CIRCUIT SKM 300 GA 102 D 1502C SKM 200 GB 102 D SKM 200 CIRCUIT skm 22 gal 123
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC Tcase = 25/80 °C
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semikron skm 150 gal
Abstract: semikron skm 150 gb 123 GAL 200 gb
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC
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400V igbt dc to dc buck converter
Abstract: semikron gd-11 semikube semikron IGBT skm 200 gb 128d dc to ac PURE SINE WAVE inverter assembly code SKM300GB128D B6CI Semikube SKM400GB128D working principle of an inverter semikron gd-11 interface
Text: Application Note AN-8003 Key Words: cooling, capacitor, driver, IGBT, Input bridge rectifier, selection, SEMISTACK Revision: 00 Issue Date: 2008-05-27 Prepared by: Frederic Sargos SEMIKUBE selection guide 1. 1.1. 1.2. 2. 2.1. 2.2. 2.3. 2.4. 2.5. 2.6. 2.7.
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AN-8003
400V igbt dc to dc buck converter
semikron gd-11 semikube
semikron IGBT skm 200 gb 128d
dc to ac PURE SINE WAVE inverter assembly code
SKM300GB128D
B6CI
Semikube
SKM400GB128D
working principle of an inverter
semikron gd-11 interface
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300GB
Abstract: GAL 700 semikron skm 300 gar 123 SKM 300 GB 123 D
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC
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B6-100
300GB
GAL 700
semikron skm 300 gar 123
SKM 300 GB 123 D
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Untitled
Abstract: No abstract text available
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC
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SKM 200 GAL 173 D IGBT
Abstract: SKM 200 GAL 173 IGBT
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 8) Inverse Diode IF= – IC
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SKM 75 GAL 123 IGBT
Abstract: SKM 600 gb skm 40 gb 123 d
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC
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Untitled
Abstract: No abstract text available
Text: S IE D Ô13bb71 DDG3bflb D3T • SEK G S E M IK K O N SEMIKRON INC Absolute Maximum Ratings Sym bol VcES VcGR lc C onditions ' Values .101 D . 121 D . 102 D . 122 D 1000 1200 1000 1200 150/100 300/200 ±20 1000 - 5 5 . .+150 2 500 Class F 55/150/56
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13bb71
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skm 200 gb 122 d
Abstract: SKM 200 GB 102 D SKM 200 GB 12V Si 122D SKM 150 GB 12V SKM 200 GB 102D skm 150 gal 122d SEMIKRON SKM 50 GAL 121D SEMIKRON SKM 22 GAL 121D semikron skm 150 gb 122
Text: SEMIKRON Conditions ' VcES VcGR lc ICM V ges Tease Ptot per Values . 101 D . 121 D . 102 D . 122 D 1000 1200 1000 1200 200/150 400/300 ±20 1250 - 5 5 . .+150 2 500 Class F 55/150/56 Rge = 20 k fl = 25/80 °C Tease = 25/80 °C T j, Tstg Visol AC, humidity
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l3bb71
G0D37G2
10-E1
skm 200 gb 122 d
SKM 200 GB 102 D
SKM 200 GB 12V
Si 122D
SKM 150 GB 12V
SKM 200 GB 102D
skm 150 gal 122d
SEMIKRON SKM 50 GAL 121D
SEMIKRON SKM 22 GAL 121D
semikron skm 150 gb 122
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Untitled
Abstract: No abstract text available
Text: SIE D m Ö13bb71 00D3bMb 452 « S E K G SEMIKRON SEMIKRON INC Absolute Maximum Ratings Sym bol VcES VcGR lc ICM V ges Plot Tj, Tstg Visol hum idity climate C onditions Values . 101 ' D , .1 2 1 D 1000 1000 I 1200 i 1200 40/25 80/50 ±20 300 - 5 5 . . .+150
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13bb71
00D3bMb
Characteristic21
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Untitled
Abstract: No abstract text available
Text: S1E SEMIKRON Conditions ' VcES V cgr lc SEMIKRON Values . 101 D i . 121 D 1000 1000 R ge = 20 k£2 Tease = 2 5 /8 0 °C Tease = 2 5 /8 0 °C ICM V g es Ptot Tj, Tstg I I 1200 1200 ±20 AC, 1 min humidity climate D IN 4 0 04 0 D IN I EC 6 8 T.1 Units V V
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Untitled
Abstract: No abstract text available
Text: SKM 300GB123D Tc - 25 °C, unless otherwise specified Values Units Absolute Maximum Ratings Symbol Conditions IGBT V CES Tj = 25 °C Tj = 150 °C 1200 v Tcase = 2 5 ”C 300 A = 220 A 400 A ±20 V 10 MS Tcase = 25 °C 260 A = 180 A 400 A Tj = 1 5 0 °C 2200
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300GB123D
300GB123Dee
CASED56
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UPS es 550
Abstract: SKM300GB123D
Text: SKM 300GB123D T = 25 °C, unless otherwise specified Absolute Maximum Ratings Symbol IGBT Conditions Values 1200 V Tcase = 2 5 ” C 300 A Tease = 80 °C 220 A 400 A ±20 V 10 MS °C 260 A = 80 °C 180 A 400 A = 150 °C 2200 A Tcase = 25 °C 350 A 230 A 600
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300GB123D
300GB123D
300GAL123D
300GAR123D
UPS es 550
SKM300GB123D
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Si 122D
Abstract: SEMIKRON SKM 100 GAL 101D skm 150 gal 122d SKM 300 GB 12 V skm 100 gb 101 d SKM 200 GB 102D semikron skm 150 gb 122 semikron skm 50 z 100 R semikron skm 150 gal
Text: se MIKRO n Absolute Maximum Ratings Sym bol Values . 101 D . 121 D . 102 D . 122 D Conditions ' 1200 1 0 0 /7 5 ICM Tease = 2 5 /8 0 C 2 0 0 /1 5 0 V ges Ptot per IG B T , T case = 2 5 °C II O C LU Tease = 2 5 /8 0 CM a cr 1000 VcES VcGR lc 1000 1200
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Untitled
Abstract: No abstract text available
Text: se MIKROn Absolute Maximum Ratings Symbol VcES VcGR lc ICM Values Conditions ' Units Rge = 20 k£2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode 8 Tcase = 25/80 °C If = - lc Tcase = 25/80 C . tp = 1 ms
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Untitled
Abstract: No abstract text available
Text: SIE ]> • s é í TF k r o í T SEMIKRON in c Absolute Maximum Ratings Symbol ñl3bb71 DG03bb5 bTS M S E K G Conditions 1 Values . 101 D 121 D 1000 1000 1200 ■ 1200 50/34 100/68 + 20 400 - 5 5 . . .+150 2 500 VcES VcGR R g e = 20 k Q lc Tcase = 25/80 C
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l3bb71
DG03bb5
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skm 200 gb 122 d
Abstract: SKM 200 GB 102 D SKM 200 GB 122 skm 100 gb 121d SKM 200 GB 102D SEMIKRON SKM 22 GAL 121D skm 100 gb 101 d 122d semikron rf3 skm 141
Text: s e M IK R O N Sym bol Values . 101 D . 121 D .1 0 2 D i . 122 D Conditions 11 V ces II O C\J UJ O cr V cgr 1000 1200 V 1000 1200 V lc Tease — 2 5 /8 0 ‘ C 2 0 0 /1 5 0 ICM Tease = 2 5 /8 0 °C 4 0 0 /3 0 0 per IG B T , Tease = 2 5 ± 20 V - 5 5 . . . + 150
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skm 152 ga 123
Abstract: semikron skm 152 ga 123 semikron skm 152 ga skm 200 IGBT 600V 200A skm 22 gal 123 SKM 200 GB 102 D SKM 300 CIRCUIT 1502C M200G812 CASED56
Text: s e M IKRO n Absolute Maximum Ratings Symbol VcES VcGR lc ICM Rge = 20 k£2 Tcase = 2 5 /8 0 °C Tcase = 2 5 /8 0 °C; tp = 1 ms per IG BT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 6 8 T.1 Inverse Diode Tcase = 2 5 /8 0 °C If= - lc Tcase = 2 5 /8 0 C . tp = 1 ms
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123D1
skm 152 ga 123
semikron skm 152 ga 123
semikron skm 152 ga
skm 200 IGBT 600V 200A
skm 22 gal 123
SKM 200 GB 102 D
SKM 300 CIRCUIT
1502C
M200G812
CASED56
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SKHI 20
Abstract: semikron SKHI 22 AR skm 191 SKM284F skm 151 mosfet skm 191 mosfet skm 22 gal 121 SKM 300 GA 102 D skm 75 101 SKM 40 GD 101 D
Text: s e MIKRDn Section 6: SEMITRANS M Power MOSFET and IGBT Modules Summary of Types Power M O SFET Modules Types 1 Circuit V ds Id RDS on) Pd Tease j T j = 25 °C Tease = 25 °C = 25 CC ! max. I W A m il Rthjc Case Page °c/w New type V • SKM 101 AR 50 200
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