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    SEMIKRON SEMITOP SK 70 DT 08 Search Results

    SEMIKRON SEMITOP SK 70 DT 08 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3SK40

    Abstract: No abstract text available
    Text: VRSM VRRM VDRM SEMITOP 3 IRMS maximum values for continuous operation (Th = 80 °C) V V 42 A 68 A 900 1300 1700 800 1200 1600 SK 40 DT 08 SK 40 DT 12 SK 40 DT 16 SK 70 DT 08 SK 70 DT 12 SK 70 DT 16 Symbol Conditions Controllable Bridge Recitifiers SK 40 DT


    Original     		PDF SK40DT ARKETIN\FRAMEDAT\datbl\B17-Semitop\sk40dt 3SK40

    3SK40

    Abstract: field controlled thyristor
    Text: VRSM VRRM VDRM SEMITOP 3 IRMS maximum values for continuous operation (Th = 80 °C) V V 42 A 68 A 900 1300 1700 800 1200 1600 SK 40 DT 08 SK 40 DT 12 SK 40 DT 16 SK 70 DT 08 SK 70 DT 12 SK 70 DT 16 Symbol Conditions Controllable Bridge Recitifiers SK 40 DT


    Original     		PDF 12ward SK40DT ARKETIN\FRAMEDAT\datbl\B17-Semitop\sk40dt 3SK40 field controlled thyristor

    Semikron sk 20

    Abstract: Semikron Semitop sk 70 dt 08 field controlled thyristor 3SK40 SK 70 DT 16
    Text: SK 40 DT, SK 70 DT VRSM VRRM VDRM SEMITOP 3 IRMS maximum values for continuous operation (Th = 80 °C) V V 42 A 68 A 900 1300 1700 800 1200 1600 SK 40 DT 08 SK 40 DT 12 SK 40 DT 16 SK 70 DT 08 SK 70 DT 12 SK 70 DT 16 Symbol Conditions Controllable Bridge


    Original     		PDF SK40DT Semikron sk 20 Semikron Semitop sk 70 dt 08 field controlled thyristor 3SK40 SK 70 DT 16

    Semikron Semitop sk 70 kq 12

    Abstract: Semikron Semitop sk 70 kq Semikron Semitop sk 45 kq 12 Semikron Semitop sk 45 kq 16 SK 70 KQ 16 SEMIKRON 3SK45 Semikron sk 1 Semikron Semitop sk 45 kq sk 45 kq 12 Semikron Semitop sk 70 dt 08
    Text: VRSM VRRM VDRM V V 47 A 72 A 900 1300 1700 800 1200 1600 SK 45 KQ 08 SK 45 KQ 12 SK 45 KQ 16 SK 70 KQ 08 SK 70 KQ 12 SK 70 KQ 16 Symbol Conditions W1C; sin 180°; Th = 100 °C Th = 85 °C ITSM Tvj = 25 °C; 10 ms Tvj = 125 °C; 10 ms Tvj = 25 °C; 8,3.10 ms


    Original     		PDF ARKETIN\FRAMEDAT\datbl\B17-Semitop\sk45kq Semikron Semitop sk 70 kq 12 Semikron Semitop sk 70 kq Semikron Semitop sk 45 kq 12 Semikron Semitop sk 45 kq 16 SK 70 KQ 16 SEMIKRON 3SK45 Semikron sk 1 Semikron Semitop sk 45 kq sk 45 kq 12 Semikron Semitop sk 70 dt 08

    Semikron Semitop sk 70 kq 12

    Abstract: Semikron Semitop 3 Semikron Semitop sk 70 kq w1c semikron TH 46 Thyristor SK 70 KQ 16 SEMIKRON sk 120 kq 16 Semikron Semitop sk 45 kq Semikron Semitop sk 45 kq 12 Semikron sk 75
    Text: VRSM VRRM VDRM V V 46 A 71 A 900 1300 1700 800 1200 1600 SK 45 KQ 08 SK 45 KQ 12 SK 45 KQ 16 SK 70 KQ 08 SK 70 KQ 12 SK 70 KQ 16 Symbol Conditions W1C; sin 180°; Th = 100 °C Th = 85 °C ITSM Tvj = 25 °C; 10 ms Tvj = 125 °C; 10 ms Tvj = 25 °C; 8,3.10 ms


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    semikron sk 50 et 12

    Abstract: CHN 346 IGBT CHN 633 diode Semikron Semitop sk 70 kq 12 CHN 709 Semikron sk 51 Semikron Semitop sk 70 kq um 3567 CHN 633 Diodes semikron sk 23 gd 063
    Text: SEMITOP Cool Components SEMITOP® "Coole Alternative" Merkmale einer von SEMIKRON aufgebrachten Wärmeleitschicht bezo- • Niedriger Wärmewiderstand gen werden. Dabei entfällt für den SEMITOP verwendet die bewähr- Anwender die aufwendige und te DCB Keramik zur elektrischen


    Original     		PDF D-90253 semikron sk 50 et 12 CHN 346 IGBT CHN 633 diode Semikron Semitop sk 70 kq 12 CHN 709 Semikron sk 51 Semikron Semitop sk 70 kq um 3567 CHN 633 Diodes semikron sk 23 gd 063

    Semikron Semitop 2

    Abstract: Semikron Semitop 3 20GH123
    Text: Absolute Maximum Ratings Symbol Conditions 1 Values Units VCES VGES IC ICM IF = –IC IFM = –ICM 1200 ± 20 23 / 15 46 / 30 24/ 17 48 / 34 V V A A A A - 40 . + 150 - 40 . + 125 260 2500 °C °C °C V Tj, Tstg Tsol Visol Th = 25/80 °C tp < 1 ms; Th = 25/80 °C


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    CHN 804 diode

    Abstract: CHN 709 CHN 633 diode chn 529 SEMITOP 2 Package CHN 633 Diodes Semikron Semitop sk 70 kq diode PFZ 15A semikron sk 50 et 12 chn 725
    Text: SEMITOP Cool Components SEMITOP® "Cool Alternative" Features • Low Rth junction to heatsink For isolation the SEMITOP uses a ceramic substrate. The evenly distributed pressure and the evenly distributed placement of the chips on the ceramic substrate results in a reduced


    Original     		PDF therm86 D-90253 CHN 804 diode CHN 709 CHN 633 diode chn 529 SEMITOP 2 Package CHN 633 Diodes Semikron Semitop sk 70 kq diode PFZ 15A semikron sk 50 et 12 chn 725

    Untitled

    Abstract: No abstract text available
    Text: SK 70 DT SEMITOP 3 413 (443+ (43 5 6 &7 8     ( :'' %.'' ( 7'' %0'' 2 6 7' 9 1; <' 2 '7 1; <' 2 %0 %<'' %&'' 1; <' 2 %& Symbol Conditions 5 2 6 7' 9 5213 @ Values Units &7 8 2"= 6 0/ 9> %'  2"= 6 %0/ 9> %'  2"= 6 0/ 9> 7+. , %' 


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    2SK60

    Abstract: No abstract text available
    Text: Absolute Maximum Ratings Symbol Conditions 1 Values Units 1200 ± 20 58 / 40 116 / 80 V V A A IGBT VCES VGES IC ICM Th = 25/80 °C tp < 1 ms; Th = 25/80 °C Diodes Th = 25/80 °C IF = –IC IFM = –ICM tp < 1 ms; Th = 25/80 °C Tj Tstg Tsol Visol Inverse Diode


    Original     		PDF TIN\FRAMEDAT\datbl\B17-Semitop\sk60gal123 2SK60

    Untitled

    Abstract: No abstract text available
    Text: SK 70 DT SEMITOP 3 413 (443+ (43 5 6 &7 8     ( :'' %.'' ( 7'' %0'' 2 6 7' 9 1; <' 2 '7 1; <' 2 %0 %<'' %&'' 1; <' 2 %& Symbol Conditions 5 2 6 7' 9 5213 @ Values Units &7 8 2"= 6 0/ 9> %'  2"= 6 %0/ 9> %'  2"= 6 0/ 9> 7+. , %' 


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    Semikron Semitop 3

    Abstract: SEMITOP UPS design
    Text: Absolute Maximum Ratings Symbol Conditions 1 Values Units VCES VGES IC ICM IF = –IC IFM = –ICM Th = 25/80 °C tp < 1 ms; Th = 25/80 °C Th = 25/80 °C tp < 1 ms; Th = 25/80 °C 600 ± 20 12 / 8 24 / 16 22 / 15 44 / 30 V V A A A A Tj, Tstg) Tsol Visol


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SK 70 DT SEMITOP 3 GSPR GSSRJ G=SR T= U EV W <6477 %0+4)*.%0? G YFF DMFF G VFF DOFF <Q- U VF X$? PZ [F =Q FV PZ [F =Q DO D[FF DEFF PZ [F =Q DE Symbol Conditions T= Q- U VF X$ TQPR ._* Values Units EV W QA¥ U ON X$] DF &QA¥ U DON X$] DF &QA¥ U ON X$] VJM KKK DF &-


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    Semikron Semitop 2

    Abstract: No abstract text available
    Text: Absolute Maximum Ratings Symbol Conditions 1 Values Units VCES VGES IC ICM IF = –IC IFM = –ICM Th = 25/80 °C tp < 1 ms; Th = 25/80 °C Th = 25/80 °C tp < 1 ms; Th = 25/80 °C 600 ± 20 20 / 14 40 / 28 22 / 15 44 / 30 V V A A A A Tj, Tstg) Tsol Visol


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    SKiiP 33 NEC 125 To

    Abstract: semikron skiip 33 NEC 125 skiip 33 nec 125 t semikron ASIC SKIC semikron skiip 33 nec Semikron Semitop sk 70 kq 12 skiip 11 nec 06 1 Semikron Semitop sk 45 kq 12 MiniSKiiP 8 semikron skiip 33
    Text: MiniSKiiP Technologie  Druckkontakte bei allen Leistungs- und Hilfsanschlüssen anstelle von Lötverbindungen.  Integration der neuesten Chiptechnologie: • • • • Niedrige Schaltverluste bei 600 V oder 1200 V, homogene NPT IGBTs mit antiparallel geschalteten CAL-Dioden


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    SKiip 83 EC 125 T1

    Abstract: SKiiP 82 AC 12 T1 SKiiP 81 AN 15 T1 semikron SKHI 22 SPICE MODEL semikron skiip 32 nab 12 T7 SKiip 83 EC 12 1 T1 SKiiP 24 NAB 063 T12 skiip 83 ac 128 BUZ78 equivalent SKIIP 81 AC 12 I T1
    Text: 0 Betriebsweise von Leistungshalbleitern Betriebsweise von Leistungshalbleitern 0.1 Elementare Schaltvorgänge Leistungshalbleiter arbeiten bis auf wenige Sonderanwendungen im Schalterbetrieb. Daraus resultieren grundlegende Prinzipien und Funktionsweisen, die in allen leistungselektronischen


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    DIODE T25 4 H5

    Abstract: diode t25 4 L0 T25 4 h5 DIODE T25 4 DIODE T25 DIODE T25 4 C diode t25 4 A0 V126 SEMITOP weight THYRISTOR tv 930
    Text: SK 70 DH V RW i- V OFM V k - 68 A fu ll co n d uce s« V 9C0 800 S K 70 DH 08 1300 1200 S K 70 DH 12 1700 1600 S K 70 DH 16 S ym bol C o n d itio n s 'o T # - 8 0 -C •f sm •' T ^ - 2 5 *C ; 10 ms C V -e o -c ) V alues - 126 *C; 1 0 m s SEMITOP 3 Half Controlled Bridge


    OCR Scan     		PDF