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    SEMICONDUCTOR SANYO ZP PACKAGE Search Results

    SEMICONDUCTOR SANYO ZP PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    XPH13016MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH8R316MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -90 A, 0.0064 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH3R10AQM Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 120 A, 0.0031 Ω@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation

    SEMICONDUCTOR SANYO ZP PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SANYO Replacement list

    Abstract: ATP302 semiconductor Sanyo zp package SANYO Replacement transistor list 2SD2600 2SJ683 2sk4182 semiconductor Sanyo 2SB1664 2SJ684
    Text: Ordering number : E I 0 1 5 3 Announcement Regarding the Discontinuation of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products have been discontinued. Please check this list carefully and contact your SANYO semiconductor sales representative if you have any


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    PDF 2SB1664 2SD2600 2SJ683 ATP302 2SJ684 2SK2864 2SK4044 SMP4001 2SK4136 ATP602 SANYO Replacement list ATP302 semiconductor Sanyo zp package SANYO Replacement transistor list 2SD2600 2SJ683 2sk4182 semiconductor Sanyo 2SB1664 2SJ684

    darligton transistor

    Abstract: 2SD2600
    Text: Ordering number : ENN*0000 2SD2600 NPN Triple Diffused Planar Silicon Darligton Transistor 2SD2600 Driver Applications Preliminary Applications • Package Dimensions Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. unit : mm


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    PDF 2SD2600 2SD2600] darligton transistor 2SD2600

    2SB1664

    Abstract: No abstract text available
    Text: Ordering number : ENN*0000 2SB1664 PNP Epitaxial Planar Silicon Transistor 2SB1664 Driver Applications Preliminary Applications • Package Dimensions Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. unit : mm 0000 [2SB1664]


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    PDF 2SB1664 2SB1664] 2SB1664

    2SK2464

    Abstract: TA-2175
    Text: Ordering number:ENN6475 N-Channel Silicon MOSFET 2SK2464 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2128 [2SK2464] 8.2 7.8 6.2 3 0.6 1.2 4.2 8.4 10.0 0.4 0.2 • Low ON resistance. · Ultrahigh-speed switching. · Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the


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    PDF ENN6475 2SK2464 2SK2464] 2SK2464 TA-2175

    2SK2775

    Abstract: ta2760 63923
    Text: Ordering number:ENN6392 N-Channel Silicon MOSFET 2SK2775 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2128 [2SK2775] 8.2 7.8 6.2 3 8.4 10.0 0.6 1.0 2.54 1 2 0.7 1.2 4.2 • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. · Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the


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    PDF ENN6392 2SK2775 2SK2775] 2SK2775 ta2760 63923

    2SJ466

    Abstract: No abstract text available
    Text: Ordering number:ENN5491B P-Channel Silicon MOSFET 2SJ466 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2128 [2SJ466] 8.2 7.8 6.2 3 8.4 10.0 0.6 1.0 2.54 1 2 0.7 1.2 4.2 • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. · Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the


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    PDF ENN5491B 2SJ466 2SJ466] 2SJ466

    63923

    Abstract: 2SK2775 63921 63924 m1403
    Text: Ordering number:ENN6392 N-Channel Silicon MOSFET 2SK2775 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2128 [2SK2775] 8.2 7.8 6.2 3 8.4 10.0 0.6 1.0 2.54 1 2 0.7 1.2 4.2 • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. · Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the


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    PDF ENN6392 2SK2775 2SK2775] 63923 2SK2775 63921 63924 m1403

    2SK262

    Abstract: No abstract text available
    Text: Ordering number:ENN6228A N-Channel Silicon MOSFET 2SK2627 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Low Qg. unit:mm 2128 [2SK2627] 0.6 1.0 2.54 1 2 0.7 1.2 4.2 8.4 10.0 0.4 0.2 8.2 7.8 6.2 3 0.3 0.6 1.0 2.54


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    PDF ENN6228A 2SK2627 2SK2627] 2SK262

    2SK2627

    Abstract: No abstract text available
    Text: Ordering number:ENN6228A N-Channel Silicon MOSFET 2SK2627 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Low Qg. unit:mm 2128 [2SK2627] 0.6 1.0 2.54 1 2 0.7 1.2 4.2 8.4 10.0 0.4 0.2 8.2 7.8 6.2 3 0.3 0.6 1.0 2.54


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    PDF ENN6228A 2SK2627 2SK2627] 2SK2627

    2SK2919

    Abstract: No abstract text available
    Text: Ordering number:ENN6121 N-Channel Silicon MOSFET 2SK2919 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · On-chip high-speed diode trr=100ns . unit:mm 2128 [2SK2919] 0.6 1.0 2.54 1 2


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    PDF ENN6121 2SK2919 100ns) 2SK2919] 2SK2919

    SPD221P

    Abstract: SPD221R sanyo transistor SGD102 SGD102T SPD121 MCP6 Marking sanyo SPD121P SPD122P SPD221
    Text: S A f/ Y O GaAs Di odes 1 j f c GaAs Schot tky Bar-r-ier Di odes Packaged Type The Sanyo SPD Series are packaged type GaAs Schottky barrier diodes designed for converters, modulators,detectors that can be operated in the X band (8.2 to 12.4GHz) and KU band (12.4 to 18.0GHz).


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    PDF SGD102, SGD102T) Ratings-126 T0-126LP T0-220CI T0-220ML SC-67, OT-186) O-220FIÂ SC-67KS0T-189} SPD221P SPD221R sanyo transistor SGD102 SGD102T SPD121 MCP6 Marking sanyo SPD121P SPD122P SPD221

    2SD1213

    Abstract: e1aj 2SB1511 2SB827 2SB828 2SB829 2SB904 2SD1063 2SD1064 2SD1065
    Text: sa H y o Low-Saturation Voltage Series T0-3PB,ML Package A p p l F e a t u r e s * Low V C E( sa t ) . ♦ H i g h l y r e s i s t a n t to breakdown be c a use o f wide ASO. ♦ F a s t s w i t c h i n g speed. i c a t i o n s * R elay d r iv e r s . ♦ H ig h -sp e e d i n v e r t e r s .


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    PDF 2SB904 2SD1213 2SB1511 2SD2285 0V/60V 2SB827 2SD-126 T0-126LP T0-220CI T0-220ML e1aj 2SB828 2SB829 2SD1063 2SD1064 2SD1065

    C4106 transistor

    Abstract: C4106 transistor c3457 B824 transistor c4106 semiconductor transistor c3447 transistor c4106 transistor d1061 D1060 d1061
    Text: SA\YO T0-220MF Mini Fin Power Transistor Series Features Sanyo power tra n sisto r case o utline T0-220MF (Mini Fin) is a sm all-sized package suited for mounting on electronic equipment th at is lim ited in height. When mounted on the board, the height above the board is approximately 10mm lower


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    PDF T0-220MF O-220 Ratings/Ta-25 T0-220) 2SB1267 2SD1903 D1235 2SB1268 2SD1904 C4106 transistor C4106 transistor c3457 B824 transistor c4106 semiconductor transistor c3447 transistor c4106 transistor d1061 D1060 d1061

    Untitled

    Abstract: No abstract text available
    Text: smro SANYO Discrete Device Package Out 1ines unit:mm Sm all-S ig n al T r a n s i s t o r s Large-Signal T ra n sisto rs Outlines SMCP, MCP. CP, CP4/5/6, PCP, PCP4/5, XP5/6, TP, TP-FA, MFP6, S0P8 name SPA. NP, MP, NMP, FLP, TO-126, T0-126ML, T0-126LP ZP. SMP, SMP-FD, TO-220, T0-220ML, T0-220FI (LS). TO-220MF,


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    PDF O-126, T0-126ML, T0-126LP O-220, T0-220ML, T0-220FI O-220MF, T0-220ML T0-126 O-126.

    2SC3253

    Abstract: 2SB1267 2SB1467 2SB903 2SB919 2SD1212 2SD1235 2SD1903 2SD2218 SC74
    Text: Low-Saturation Voltage Series T0~220, M F ,ML Package A p p ] i c a t i o n s * Relay d r i v e r s . * High-speed in v e rte rs . * C onverters. * H igh-current F e a t u r e s * Low V C E ( s a t ) . * H i g h l y r e s i s t a n t t o b r e a k d o w n b e c a u s e o f w i d e ASO. * F a s t


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    PDF TQ-220, 2SB1267 2SD1903 T0-220MF 2SB919 2SD1235 T0-220 2SB903 2SD1212 2SB1467 2SC3253 2SD1212 2SD2218 SC74

    sj437

    Abstract: SBA100-04ZP 2sk2435 2SJ456 2sk2532
    Text: SAfiYO New Product New Package,ZP F*ow e t~ ’ZP" o n 1 y 2. 5 m m fcioo Mount. SANYO ne w p a c k a g e ZP o f t h e n e e d f o r s m a l l e r a nd surface thinner mount t y p e s yst ems. holds the power chip of 50W w i t h i n ♦ A d o p t i n g s t e p - s e c t i o n e d lead-frame s t r u c t u r e e l i m i n a t e s s o l d e r br i dge


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    PDF SBA100-04ZP SBA160-04ZP 0213T sj437 2sk2435 2SJ456 2sk2532

    2S1265

    Abstract: bj 950 131- 6 2SK1885 2SJ type 2sj262 2SK1883 2SK3066 2SK2432 2SJ253 2SJ260
    Text: Large-signal Power MOSFETs l The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and


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    PDF low-126 T0-126LP T0-220CI T0-220ML SC-67, OT-186) O-220FIÂ SC-67KS0T-189} T0-220MF lsDwATT220> 2S1265 bj 950 131- 6 2SK1885 2SJ type 2sj262 2SK1883 2SK3066 2SK2432 2SJ253 2SJ260

    NPN Transistor 600V SC-62

    Abstract: 2SK2632 2SK1413 SANYO BIPOLAR transistor pcp SANYO SC-62 2SK1924 2SK2623 2SK1412LS 2SK1461 2SK1923
    Text: Large-signal Power M0SFETs 5 The Sanyo J-MOS series u tiliz e s Sanyo’s own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for v irtu a lly any types of power electronic equipment, the UH Series, AP Series and


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    PDF form-126 T0-126LP T0-220CI T0-220ML SC-67, OT-186) O-220FIÂ SC-67KS0T-189} T0-220MF lsDwATT220> NPN Transistor 600V SC-62 2SK2632 2SK1413 SANYO BIPOLAR transistor pcp SANYO SC-62 2SK1924 2SK2623 2SK1412LS 2SK1461 2SK1923

    7901S

    Abstract: No abstract text available
    Text: O rd erin g n u m b er: EN5099 , FC154 NPN/PNP Epitaxial Planar Silicon Transistor High-Speed Switching, High-Frequency Amp Applications Features • Composite type with an NPN transistor and a PNP transistor contained in the conventional CP package, improving the mounting efficiency greatly.


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    PDF EN5099 FC154 FC154 2SC4270 2SA1669, 7901S

    IRF 850 mosfet

    Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
    Text: Medium Output Power MOSFETs l N ew P a d o - g e : T S S O P 8 *0ne size sm aller than S0P8. Best su ited fo r higher performance and effic ie n c y of battery-pow ered equipment and av ailab le fo r h igh-density surface mount. S O P S ^Reduced surface mount area by 502 and thickness by 30Z over the SC-63(TP).package.


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    PDF SC-63 T0-126LP T0-220CI T0-220ML SC-67, OT-186) O-220FIÂ SC-67KS0T-189} T0-220MF lsDwATT220> IRF 850 mosfet Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382

    sanyo transistor tt series

    Abstract: TO225 LEAD FORMING TRANSISTORS SANYO sanyo transistor SSFP package 2SB1269 2SB1449 2SB1450 2SC5264 2SC5420
    Text: Power Transistor Surface Mount Package S M P Surface Mount Power In r e c e n t y e a r s s u r f a c e m ount s e m ic o n d u c to r p ro d u c ts have found wide a p p li c a t io n from s m a ll - s i g n a l consum er equipm ent to h ig h -p o w e r i n d u s t r i a l e q u ip m e n t.


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    PDF becom-126 T0-126LP T0-220CI T0-220ML SC-67, OT-186) O-220FIÂ SC-67KS0T-189} T0-220MF lsDwATT220> sanyo transistor tt series TO225 LEAD FORMING TRANSISTORS SANYO sanyo transistor SSFP package 2SB1269 2SB1449 2SB1450 2SC5264 2SC5420

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN6228A N-Channel Silicon M O SFET _ SA%YO 2SK2627 Ultrahigh-Speed Switching Applications Features Package Dimensions •L ow O N -resistan ce. • L ow Q g. unit:mm 2128 [2SK2627] 1 : Gate 2 : Source 3 : Drain SANYO : ZP Bottom view


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    PDF ENN6228A 2SK2627 2SK2627]

    SB002-15SPA

    Abstract: SB005-09CP SB005-09SPA SB01-15NP SB02-09CP SB02-09NP SB02-15 SB05-09 SB10-09T S0T143
    Text: SAfiYO Small-Signal High-Voltage Schottky Barri er Diodes 2 S i n g l e T y p e S{: Mounted on ceramic board (250mm' X 0.8mm) ☆: Mounted on Cu foil (16mm‘X 0.2mmt) on glass epoxy board 0:Refer to the individual catalogue of each product because the center part of PCP outline is completely


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    PDF 250mm' T0-126 SB005-09CP SB02-09CP SB10-09PCSJ T0-126LP T0-220CI T0-220ML SC-67, OT-186) SB002-15SPA SB005-09SPA SB01-15NP SB02-09NP SB02-15 SB05-09 SB10-09T S0T143

    2SA1763

    Abstract: IRF 543 MOSFET 2SA1863 EA MOSFET 63 ng marking WMM 2SA1857 2SA1864 2SA1865 2SA1866 2SA1883
    Text: NEW PRODUCT SMCP Super Mini Chip Pack Transistor series The new ly d e v e lo p e d Sanyo SMCP package can make th e s e t s more compact and slim m er b e ca u se of a s u p e r mini package. _ We have v a r io u s p ro d u c ts f o r such a p p l i c a t i o n s a s shown below. In a d d it i o n , we can p ro v id e you w ith r e e l - s t y l e packing


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    PDF m-126 T0-126LP T0-220CI T0-220ML SC-67, OT-186) O-220FIÂ SC-67KS0T-189} T0-220MF lsDwATT220> 2SA1763 IRF 543 MOSFET 2SA1863 EA MOSFET 63 ng marking WMM 2SA1857 2SA1864 2SA1865 2SA1866 2SA1883