SANYO Replacement list
Abstract: ATP302 semiconductor Sanyo zp package SANYO Replacement transistor list 2SD2600 2SJ683 2sk4182 semiconductor Sanyo 2SB1664 2SJ684
Text: Ordering number : E I 0 1 5 3 Announcement Regarding the Discontinuation of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products have been discontinued. Please check this list carefully and contact your SANYO semiconductor sales representative if you have any
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2SB1664
2SD2600
2SJ683
ATP302
2SJ684
2SK2864
2SK4044
SMP4001
2SK4136
ATP602
SANYO Replacement list
ATP302
semiconductor Sanyo zp package
SANYO Replacement transistor list
2SD2600
2SJ683
2sk4182
semiconductor Sanyo
2SB1664
2SJ684
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darligton transistor
Abstract: 2SD2600
Text: Ordering number : ENN*0000 2SD2600 NPN Triple Diffused Planar Silicon Darligton Transistor 2SD2600 Driver Applications Preliminary Applications • Package Dimensions Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. unit : mm
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2SD2600
2SD2600]
darligton transistor
2SD2600
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2SB1664
Abstract: No abstract text available
Text: Ordering number : ENN*0000 2SB1664 PNP Epitaxial Planar Silicon Transistor 2SB1664 Driver Applications Preliminary Applications • Package Dimensions Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. unit : mm 0000 [2SB1664]
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2SB1664
2SB1664]
2SB1664
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2SK2464
Abstract: TA-2175
Text: Ordering number:ENN6475 N-Channel Silicon MOSFET 2SK2464 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2128 [2SK2464] 8.2 7.8 6.2 3 0.6 1.2 4.2 8.4 10.0 0.4 0.2 • Low ON resistance. · Ultrahigh-speed switching. · Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the
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ENN6475
2SK2464
2SK2464]
2SK2464
TA-2175
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2SK2775
Abstract: ta2760 63923
Text: Ordering number:ENN6392 N-Channel Silicon MOSFET 2SK2775 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2128 [2SK2775] 8.2 7.8 6.2 3 8.4 10.0 0.6 1.0 2.54 1 2 0.7 1.2 4.2 • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. · Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the
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ENN6392
2SK2775
2SK2775]
2SK2775
ta2760
63923
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2SJ466
Abstract: No abstract text available
Text: Ordering number:ENN5491B P-Channel Silicon MOSFET 2SJ466 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2128 [2SJ466] 8.2 7.8 6.2 3 8.4 10.0 0.6 1.0 2.54 1 2 0.7 1.2 4.2 • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. · Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the
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ENN5491B
2SJ466
2SJ466]
2SJ466
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63923
Abstract: 2SK2775 63921 63924 m1403
Text: Ordering number:ENN6392 N-Channel Silicon MOSFET 2SK2775 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2128 [2SK2775] 8.2 7.8 6.2 3 8.4 10.0 0.6 1.0 2.54 1 2 0.7 1.2 4.2 • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. · Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the
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ENN6392
2SK2775
2SK2775]
63923
2SK2775
63921
63924
m1403
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2SK262
Abstract: No abstract text available
Text: Ordering number:ENN6228A N-Channel Silicon MOSFET 2SK2627 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Low Qg. unit:mm 2128 [2SK2627] 0.6 1.0 2.54 1 2 0.7 1.2 4.2 8.4 10.0 0.4 0.2 8.2 7.8 6.2 3 0.3 0.6 1.0 2.54
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ENN6228A
2SK2627
2SK2627]
2SK262
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2SK2627
Abstract: No abstract text available
Text: Ordering number:ENN6228A N-Channel Silicon MOSFET 2SK2627 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Low Qg. unit:mm 2128 [2SK2627] 0.6 1.0 2.54 1 2 0.7 1.2 4.2 8.4 10.0 0.4 0.2 8.2 7.8 6.2 3 0.3 0.6 1.0 2.54
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ENN6228A
2SK2627
2SK2627]
2SK2627
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2SK2919
Abstract: No abstract text available
Text: Ordering number:ENN6121 N-Channel Silicon MOSFET 2SK2919 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · On-chip high-speed diode trr=100ns . unit:mm 2128 [2SK2919] 0.6 1.0 2.54 1 2
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ENN6121
2SK2919
100ns)
2SK2919]
2SK2919
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SPD221P
Abstract: SPD221R sanyo transistor SGD102 SGD102T SPD121 MCP6 Marking sanyo SPD121P SPD122P SPD221
Text: S A f/ Y O GaAs Di odes 1 j f c GaAs Schot tky Bar-r-ier Di odes Packaged Type The Sanyo SPD Series are packaged type GaAs Schottky barrier diodes designed for converters, modulators,detectors that can be operated in the X band (8.2 to 12.4GHz) and KU band (12.4 to 18.0GHz).
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SGD102,
SGD102T)
Ratings-126
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
SPD221P
SPD221R
sanyo transistor
SGD102
SGD102T
SPD121
MCP6 Marking sanyo
SPD121P
SPD122P
SPD221
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2SD1213
Abstract: e1aj 2SB1511 2SB827 2SB828 2SB829 2SB904 2SD1063 2SD1064 2SD1065
Text: sa H y o Low-Saturation Voltage Series T0-3PB,ML Package A p p l F e a t u r e s * Low V C E( sa t ) . ♦ H i g h l y r e s i s t a n t to breakdown be c a use o f wide ASO. ♦ F a s t s w i t c h i n g speed. i c a t i o n s * R elay d r iv e r s . ♦ H ig h -sp e e d i n v e r t e r s .
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2SB904
2SD1213
2SB1511
2SD2285
0V/60V
2SB827
2SD-126
T0-126LP
T0-220CI
T0-220ML
e1aj
2SB828
2SB829
2SD1063
2SD1064
2SD1065
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C4106 transistor
Abstract: C4106 transistor c3457 B824 transistor c4106 semiconductor transistor c3447 transistor c4106 transistor d1061 D1060 d1061
Text: SA\YO T0-220MF Mini Fin Power Transistor Series Features Sanyo power tra n sisto r case o utline T0-220MF (Mini Fin) is a sm all-sized package suited for mounting on electronic equipment th at is lim ited in height. When mounted on the board, the height above the board is approximately 10mm lower
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T0-220MF
O-220
Ratings/Ta-25
T0-220)
2SB1267
2SD1903
D1235
2SB1268
2SD1904
C4106 transistor
C4106
transistor c3457
B824 transistor
c4106 semiconductor
transistor c3447
transistor c4106
transistor d1061
D1060
d1061
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Untitled
Abstract: No abstract text available
Text: smro SANYO Discrete Device Package Out 1ines unit:mm Sm all-S ig n al T r a n s i s t o r s Large-Signal T ra n sisto rs Outlines SMCP, MCP. CP, CP4/5/6, PCP, PCP4/5, XP5/6, TP, TP-FA, MFP6, S0P8 name SPA. NP, MP, NMP, FLP, TO-126, T0-126ML, T0-126LP ZP. SMP, SMP-FD, TO-220, T0-220ML, T0-220FI (LS). TO-220MF,
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O-126,
T0-126ML,
T0-126LP
O-220,
T0-220ML,
T0-220FI
O-220MF,
T0-220ML
T0-126
O-126.
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2SC3253
Abstract: 2SB1267 2SB1467 2SB903 2SB919 2SD1212 2SD1235 2SD1903 2SD2218 SC74
Text: Low-Saturation Voltage Series T0~220, M F ,ML Package A p p ] i c a t i o n s * Relay d r i v e r s . * High-speed in v e rte rs . * C onverters. * H igh-current F e a t u r e s * Low V C E ( s a t ) . * H i g h l y r e s i s t a n t t o b r e a k d o w n b e c a u s e o f w i d e ASO. * F a s t
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TQ-220,
2SB1267
2SD1903
T0-220MF
2SB919
2SD1235
T0-220
2SB903
2SD1212
2SB1467
2SC3253
2SD1212
2SD2218
SC74
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sj437
Abstract: SBA100-04ZP 2sk2435 2SJ456 2sk2532
Text: SAfiYO New Product New Package,ZP F*ow e t~ ’ZP" o n 1 y 2. 5 m m fcioo Mount. SANYO ne w p a c k a g e ZP o f t h e n e e d f o r s m a l l e r a nd surface thinner mount t y p e s yst ems. holds the power chip of 50W w i t h i n ♦ A d o p t i n g s t e p - s e c t i o n e d lead-frame s t r u c t u r e e l i m i n a t e s s o l d e r br i dge
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SBA100-04ZP
SBA160-04ZP
0213T
sj437
2sk2435
2SJ456
2sk2532
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2S1265
Abstract: bj 950 131- 6 2SK1885 2SJ type 2sj262 2SK1883 2SK3066 2SK2432 2SJ253 2SJ260
Text: Large-signal Power MOSFETs l The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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low-126
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
T0-220MF
lsDwATT220>
2S1265
bj 950 131- 6
2SK1885
2SJ type
2sj262
2SK1883
2SK3066
2SK2432
2SJ253
2SJ260
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NPN Transistor 600V SC-62
Abstract: 2SK2632 2SK1413 SANYO BIPOLAR transistor pcp SANYO SC-62 2SK1924 2SK2623 2SK1412LS 2SK1461 2SK1923
Text: Large-signal Power M0SFETs 5 The Sanyo J-MOS series u tiliz e s Sanyo’s own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for v irtu a lly any types of power electronic equipment, the UH Series, AP Series and
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form-126
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
T0-220MF
lsDwATT220>
NPN Transistor 600V SC-62
2SK2632
2SK1413
SANYO BIPOLAR transistor pcp
SANYO SC-62
2SK1924
2SK2623
2SK1412LS
2SK1461
2SK1923
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7901S
Abstract: No abstract text available
Text: O rd erin g n u m b er: EN5099 , FC154 NPN/PNP Epitaxial Planar Silicon Transistor High-Speed Switching, High-Frequency Amp Applications Features • Composite type with an NPN transistor and a PNP transistor contained in the conventional CP package, improving the mounting efficiency greatly.
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EN5099
FC154
FC154
2SC4270
2SA1669,
7901S
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IRF 850 mosfet
Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
Text: Medium Output Power MOSFETs l N ew P a d o - g e : T S S O P 8 *0ne size sm aller than S0P8. Best su ited fo r higher performance and effic ie n c y of battery-pow ered equipment and av ailab le fo r h igh-density surface mount. S O P S ^Reduced surface mount area by 502 and thickness by 30Z over the SC-63(TP).package.
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SC-63
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
T0-220MF
lsDwATT220>
IRF 850 mosfet
Mini size of Discrete semiconductor elements
2SJ335
cp 035 sanyo
CP 022 ND
fa214
8ROM
2SK2637
marking 85m ok
2SJ382
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sanyo transistor tt series
Abstract: TO225 LEAD FORMING TRANSISTORS SANYO sanyo transistor SSFP package 2SB1269 2SB1449 2SB1450 2SC5264 2SC5420
Text: Power Transistor Surface Mount Package S M P Surface Mount Power In r e c e n t y e a r s s u r f a c e m ount s e m ic o n d u c to r p ro d u c ts have found wide a p p li c a t io n from s m a ll - s i g n a l consum er equipm ent to h ig h -p o w e r i n d u s t r i a l e q u ip m e n t.
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becom-126
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
T0-220MF
lsDwATT220>
sanyo transistor tt series
TO225 LEAD FORMING
TRANSISTORS SANYO
sanyo transistor
SSFP package
2SB1269
2SB1449
2SB1450
2SC5264
2SC5420
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN6228A N-Channel Silicon M O SFET _ SA%YO 2SK2627 Ultrahigh-Speed Switching Applications Features Package Dimensions •L ow O N -resistan ce. • L ow Q g. unit:mm 2128 [2SK2627] 1 : Gate 2 : Source 3 : Drain SANYO : ZP Bottom view
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ENN6228A
2SK2627
2SK2627]
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SB002-15SPA
Abstract: SB005-09CP SB005-09SPA SB01-15NP SB02-09CP SB02-09NP SB02-15 SB05-09 SB10-09T S0T143
Text: SAfiYO Small-Signal High-Voltage Schottky Barri er Diodes 2 S i n g l e T y p e S{: Mounted on ceramic board (250mm' X 0.8mm) ☆: Mounted on Cu foil (16mm‘X 0.2mmt) on glass epoxy board 0:Refer to the individual catalogue of each product because the center part of PCP outline is completely
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250mm'
T0-126
SB005-09CP
SB02-09CP
SB10-09PCSJ
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
SB002-15SPA
SB005-09SPA
SB01-15NP
SB02-09NP
SB02-15
SB05-09
SB10-09T
S0T143
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2SA1763
Abstract: IRF 543 MOSFET 2SA1863 EA MOSFET 63 ng marking WMM 2SA1857 2SA1864 2SA1865 2SA1866 2SA1883
Text: NEW PRODUCT SMCP Super Mini Chip Pack Transistor series The new ly d e v e lo p e d Sanyo SMCP package can make th e s e t s more compact and slim m er b e ca u se of a s u p e r mini package. _ We have v a r io u s p ro d u c ts f o r such a p p l i c a t i o n s a s shown below. In a d d it i o n , we can p ro v id e you w ith r e e l - s t y l e packing
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m-126
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
T0-220MF
lsDwATT220>
2SA1763
IRF 543 MOSFET
2SA1863
EA MOSFET 63 ng
marking WMM
2SA1857
2SA1864
2SA1865
2SA1866
2SA1883
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