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    SEM 3040 IC Search Results

    SEM 3040 IC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    71322L70P Renesas Electronics Corporation 2K X 8 DUALPORT RAM W/SEM Visit Renesas Electronics Corporation
    71322S70J Renesas Electronics Corporation 2K X 8 DUALPORT RAM W/SEM Visit Renesas Electronics Corporation
    71322S70J8 Renesas Electronics Corporation 2K X 8 DUALPORT RAM W/SEM Visit Renesas Electronics Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    SEM 3040 IC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sem 3040

    Abstract: 70V261 A12L A13L IDT70V261 IDT70V261L IDT70V261S
    Text: PRELIMINARY IDT70V261S/L HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • High-speed access — Commercial: 25/35/55ns max.


    Original     		PDF IDT70V261S/L 25/35/55ns IDT70V261S 450mW IDT70V261L IDT70V261 100-pin PN100-1) 70V261 sem 3040 A12L A13L IDT70V261L IDT70V261S

    sem 3040

    Abstract: A13L IDT70V261 IDT70V261L IDT70V261S
    Text: HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 25/35/55ns max. – Industrial: 25ns (max.) Low-power operation


    Original     		PDF 25/35/55ns IDT70V261S 300mW IDT70V261L IDT70V261S/L IDT70V261 200mV sem 3040 A13L IDT70V261L IDT70V261S

    sem 3040

    Abstract: DSC-3040 A12L A13L IDT70V261 IDT70V261L IDT70V261S IDT70V261PF
    Text: HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 25/35/55ns max. Low-power operation – IDT70V261S Active: 300mW (typ.)


    Original     		PDF 25/35/55ns IDT70V261S 300mW IDT70V261L 660mW IDT70V261S/L IDT70V261 70V261 sem 3040 DSC-3040 A12L A13L IDT70V261L IDT70V261S IDT70V261PF

    sem 3040

    Abstract: DSC-3040 A12L A13L IDT70V261 IDT70V261L IDT70V261S IDT70V261PF 70V261L
    Text: HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 25/35/55ns max. Low-power operation – IDT70V261S Active: 300mW (typ.)


    Original     		PDF 25/35/55ns IDT70V261S 300mW IDT70V261L IDT70V261S/L IDT70V261 660mW sem 3040 DSC-3040 A12L A13L IDT70V261L IDT70V261S IDT70V261PF 70V261L

    DSC-3040

    Abstract: sem 3040 70V261 A13L IDT70V261 IDT70V261L IDT70V261S
    Text: HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM WITH INTERRUPT PRELIMINARY IDT70V261S/L Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simultaneous access of the same memory location • High-speed access — Commercial: 25/35/55ns max.


    Original     		PDF IDT70V261S/L 25/35/55ns IDT70V261S 450mW IDT70V261L IDT70V261 100-pin PN100-1) 70V261 DSC-3040 sem 3040 A13L IDT70V261L IDT70V261S

    sem 3040

    Abstract: A12L A13L IDT70V261 IDT70V261L IDT70V261S
    Text: PRELIMINARY IDT70V261S/L HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • High-speed access — Commercial: 25/35/55ns max.


    Original     		PDF IDT70V261S/L 25/35/55ns IDT70V261S 450mW IDT70V261L IDT70V261 100-pin PN100-1) 70V261 sem 3040 A12L A13L IDT70V261L IDT70V261S

    sem 3040

    Abstract: DSC-3040 A12L A13L IDT70V261 IDT70V261L IDT70V261S 70V261L
    Text: PRELIMINARY IDT70V261S/L HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simultaneous access of the same memory location • High-speed access — Commercial: 25/35/55ns max.


    Original     		PDF IDT70V261S/L 25/35/55ns IDT70V261S 300mW IDT70V261L IDT70V261 100-pin PN100-1) sem 3040 DSC-3040 A12L A13L IDT70V261L IDT70V261S 70V261L

    sem 3040

    Abstract: DSC-3040
    Text: HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 25/35/55ns max. Low-power operation – IDT70V261S Active: 300mW (typ.)


    Original     		PDF IDT70V261S/L 25/35/55ns IDT70V261S 300mW IDT70V261L 660mW IDT70V261 70V261 sem 3040 DSC-3040

    sem 3040

    Abstract: DSC-3040 A13L IDT70V261 IDT70V261L IDT70V261S
    Text: HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 25/35/55ns max. – Industrial: 25ns (max.) Low-power operation


    Original     		PDF 25/35/55ns IDT70V261S 300mW IDT70V261L IDT70V261S/L IDT70V261 200mV sem 3040 DSC-3040 A13L IDT70V261L IDT70V261S

    sem 3040

    Abstract: A13L IDT70V261 IDT70V261L IDT70V261S
    Text: HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Š Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 25/35/55ns max. – Industrial: 25ns (max.) Low-power operation


    Original     		PDF 25/35/55ns IDT70V261S 300mW IDT70V261L IDT70V261S/L IDT70V261 sem 3040 A13L IDT70V261L IDT70V261S

    sem 3040

    Abstract: IDT70V261S/L A12L A13L IDT70V261 IDT70V261L IDT70V261S DSC-3040
    Text: HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 25/35/55ns max. Low-power operation – IDT70V261S Active: 300mW (typ.)


    Original     		PDF 25/35/55ns IDT70V261S 300mW IDT70V261L IDT70V261S/L IDT70V261 660mW 200mV sem 3040 IDT70V261S/L A12L A13L IDT70V261L IDT70V261S DSC-3040

    sem 3040

    Abstract: DSC-3040
    Text: HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 25/35/55ns max. – Industrial: 25ns (max.) Low-power operation


    Original     		PDF IDT70V261S/L 25/35/55ns IDT70V261S 300mW IDT70V261L IDT70V261 sem 3040 DSC-3040

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Š Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 25/35/55ns max. – Industrial: 25ns (max.) Low-power operation


    Original     		PDF 25/35/55ns IDT70V261S 300mW IDT70V261L IDT70V261S/L IDT70V261

    sem 3040

    Abstract: DSC-3040
    Text: HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Š Features ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 25/35/55ns max. – Industrial: 25ns (max.) Low-power operation


    Original     		PDF IDT70V261S/L 25/35/55ns IDT70V261S 300mW IDT70V261L IDT70V261 sem 3040 DSC-3040

    sem 3040 ic

    Abstract: No abstract text available
    Text: 1 HIGH-SPEED 3.3V 16K X 16 DUAL-PORT STATIC RAM WITH INTERRUPT dt PRELIMINARY IDT70V261S/L Integrated De vice Technology, Inc. FEATURES: • • True Dual-Ported m em ory cells w hich allow sim ulta­ neous access of the sam e m em ory location • H igh-speed access


    OCR Scan     		PDF IDT70V261S/L 25/35/55ns IDT70V261S IDT70V261L IDT70V261 100-pin PN100-1) 70V261 sem 3040 ic

    sem 3040 ic

    Abstract: sem 3040 ic all data
    Text: I N T E G R A T E » D E VI CE bflE D • M Ô 5 S 77 1 0 0 1 4 3 7 2 47b ■ IDT HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Integrated Device Technology. Inc FEATURES: PRELIMINARY IDT70V261S/L • M/S = H for BUSY output flag on Master M/S = L for BUSY input on Slave


    OCR Scan     		PDF IDT70V261S/L 100-pin PN100-1) 70V261 sem 3040 ic sem 3040 ic all data

    sem 3040 ic

    Abstract: DSC-3040
    Text: P > Integrated Device Technology, Inc. HIGH-SPEED 3.3V 16Kx 16 DUAL-PORT STATIC RAM FEATURES: PRELIMINARY IDT70V261S/L more using the Master/Slave select when cascading more than one device M/S = H for BUSY output flag on Master M/S = L for BUSY input on Slave


    OCR Scan     		PDF IDT70V261S/L 25/35/55ns IDT70V261S 300mW IDT70V2611Active: IDT70V261 IDT70V261S/L 100-pin PN100-1) sem 3040 ic DSC-3040

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 3.3V 16Kx 16 DUAL-PORT STATIC RAM F e a tu re s * * True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access - * ♦ ♦ ♦ ♦ Low-power operation - ♦ Commercial: 25/35/55ns max. IDT70V261S


    OCR Scan     		PDF 25/35/55ns IDT70V261S 300mW IDT70V261L 660mW IDT70V261S/L IDT70V261 492-M

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 3.3V 16Kx 16 DUAL-PORT STATIC RAM PRELIMINARY IDT70V261S/L Integrated Device Technology, Inc. FEATURES: • M/S = H for BUSY output flag on Master M/S = L for BUSY input on Slave • Interrupt Flag • Devices are capable of withstanding greater than 2001V


    OCR Scan     		PDF IDT70V261S/L 100-pin 25/35/55ns PN100-1) 70V261 QG17b43

    sem 3040

    Abstract: No abstract text available
    Text: m PRELIMINARY IDT70V261S/L HIGH-SPEED 3.3V 16Kx 16 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. • M/S = H for BUSY output flag on Master M/S = L for BUSY input on Slave • Interrupt Flag • Devices are capable of withstanding greater than 2001V


    OCR Scan     		PDF IDT70V261S/L 100-pin 25/35/55ns PN100-1) 70V261 4A2S771 sem 3040

    MUR20030CT

    Abstract: MUR20040CT MUR200 diode B4E
    Text: MOTOROLA SC D I O D E S / O P T O b4E D • b 3 b 7 E S S 0 D ß b S 3 2 fl2b IH0T7 MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M UR20030CT M UR20040CT Ultrafast SWITCHMODE Power Rectifiers MUR20040CTI« a Motorola Prafarrad Davtca . . . designed for use in switching power supplies, inverters, and as freewheeling diodes.


    OCR Scan     		PDF 3b7255 MUR20M0CT MUR20030CT MUR20040CT MUR200 diode B4E

    MBR030

    Abstract: MBR040 nia4 51973
    Text: MOTOROLA MBR030 MBR040 SEM ICONDUCTOR TECHNICAL DATA A d v a n c e In fo r m a tio n SCHOTTKY RECTIFIERS SWITCHMODE RECTIFIERS 0.5 AMPERE 30-40 VOLTS . designed for use in switching power supplies, inverters, and as free wheeling diodes, these devices have the following features:


    OCR Scan     		PDF DO-35) MBR030 MBR040 8S88B MBR030 MBR040 nia4 51973

    ECG1028

    Abstract: ECG1090
    Text: PHILIPS E C G I NC 17 E • bb53^2fl 0003707 T Bi T-74-Ö5-01 E C G 1 0 2 8 ,E C G 1 0 9 0 POWER AMPLIFIER MODULE sem iconductors 78 70 FOR 25 WATTS M I N . A F POWER AMPLIFIER 2 POWER SUPPLY ECG1028 ECG 1090 VT 2-3.2#/ 1 wiiiiiiiiiwuu z ^ r r IJ ^ 36^ d im e n sio n s


    OCR Scan     		PDF ECG1028 ECG1090 T-74-05-01 ECGI028 ECGI090 ECQ1090 ECGI090 ECG1090

    Untitled

    Abstract: No abstract text available
    Text: 12E D I b3b7HSS Q071bQ7 3 | MOTOROLA SC -CDI0DES/0PT03- T -0 3 -II MOTOROLA SEM ICONDUCTOR TECHNICAL DATA A dvan ce In form ation SCHOTTKY RECTIFIERS SWITCHMODE RECTIFIERS 0.5 AMPERE 30-40 VOLTS . . . designed for use in switching power supplies, inverters, and


    OCR Scan     		PDF -CDI0DES/0PT03- Q071bQ7 DO-204AH DO-35)