SELF VK200 Search Results

SELF VK200 Result Highlights (5)

Part	Manufacturer	Description
78548-116HLF	Amphenol Communications Solutions	78548-116HLF-B/S II HDR DR SELF-RET
78548-218HLF	Amphenol Communications Solutions	78548-218HLF-B/S II HDR DR SELF-RET
78548-124HLF	Amphenol Communications Solutions	78548-124HLF-B/S II HDR DR SELF-RET
78548-112HLF	Amphenol Communications Solutions	78548-112HLF-B/S II HDR DR SELF-RET
86380-424HLF	Amphenol Communications Solutions	86380-424HLF-B/S II HDR DR SELF-RET

SELF VK200 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
equivalent for transistor tt 2206 Abstract: equivalent transistor TT 2206 transistor tt 2206 MRF163 TT 2206 transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal output and driver applications up to 400 MHz range. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 25 Watts	OCR Scan	MRF163, MRF163 AN215A equivalent for transistor tt 2206 equivalent transistor TT 2206 transistor tt 2206 TT 2206 transistor	PDF
schema electrique micro FM Abstract: electronique pratique MK090 data book electronique condensateur electrolytique schema MK090 ampli lineaire diviseur de frequence AMPLI LINEAIRE FM ampli schema Text: Radio AMPLI LINEAIRE FM 75 à 130 MHz Spécial MICRO-EMETTEUR Etudié pour doper la puissance des petits émetteurs FM expérimentaux, cet amplificateur linéaire délivre grâce à deux étages d'amplification RF, une puissance de 3W environ.	Original	MK570 vrier/15 schema electrique micro FM electronique pratique MK090 data book electronique condensateur electrolytique schema MK090 ampli lineaire diviseur de frequence AMPLI LINEAIRE FM ampli schema	PDF
MRF162 Abstract: S21171 triode FU 33 MOTOROLA TRANSISTOR 712 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F162 The RF MOSFET Line RF P o w er Field E ffe c t Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal output and driver applications up to 400 MHz range. • Guaranteed 28 Volt, 400 MHz Performance	OCR Scan	MRF162, MRF162 AN215A RF162 S21171 triode FU 33 MOTOROLA TRANSISTOR 712	PDF
shock vk200 Abstract: marking c7 sot-23 MMBFU310LT1 Text: MOTOROLA Order this document by MMBFU310LT1/D SEMICONDUCTOR TECHNICAL DATA JFET "Transistor N-Channel 2 SOURCE M MBFU310LT1 Motorola Preferred Device MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Vd S 25 Vdc Gate-Source Voltage vgs 25 Vdc Ig 10 mAdc	OCR Scan	MMBFU310LT1/D MBFU310LT1 OT-23 236AB) MMBFU310LT1 shock vk200 marking c7 sot-23 MMBFU310LT1	PDF
J141 mosfet Abstract: MRF-161 fet j141 mrf161 2191F SELF vk200 k 575 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF P o w er Field E ffe c t lY an sisto r N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 400 MHz Performance	OCR Scan	MRF161, MRF161 AN215A J141 mosfet MRF-161 fet j141 2191F SELF vk200 k 575	PDF
SELF vk200 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF P o w er F ield -E ffect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. 5.0 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER	OCR Scan	MRF134 68-ohm AN215A SELF vk200	PDF
motorola U310 Abstract: shock vk200 vk200 choke MMBFU310LT1 MVM010W U310 transistor u310 marking C3 sot-23 variable trimmer bar SOT-23 Text: MOTOROLA Order this document by MMBFU310LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBFU310LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating 1 Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage	Original	MMBFU310LT1/D MMBFU310LT1 236AB) MMBFU310LT1/D* motorola U310 shock vk200 vk200 choke MMBFU310LT1 MVM010W U310 transistor u310 marking C3 sot-23 variable trimmer bar SOT-23	PDF
136y Abstract: 2117 equivalent p channel de mosfet zt173 MOTOROLA S 5068 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F136 M R F 136Y The RF MOSFET Line RF P ow er F ie ld -E ffe ct Transistors N -Channel E nhancem ent-M ode MOSFETs 15 W, 30 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . designed for wideband large-signal amplifier and oscillator applications up	OCR Scan	MRF136 MRF136Y MRF136Y AN215A DL110 136y 2117 equivalent p channel de mosfet zt173 MOTOROLA S 5068	PDF
VK200 rfc Abstract: MMBFU310LT1 transistor y21 sot-23 vk200 rfc with 6 turns MVM010W U310 shock vk200 Text: ON Semiconductort JFET Transistor MMBFU310LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Gate Current 3 1 THERMAL CHARACTERISTICS Characteristic	Original	MMBFU310LT1 236AB) r14525 MMBFU310LT1/D VK200 rfc MMBFU310LT1 transistor y21 sot-23 vk200 rfc with 6 turns MVM010W U310 shock vk200	PDF
motorola U310 Abstract: shock vk200 VK200 rfc MVM010 transistor u310 motorola 539 U310 MVM010W motorola 2443 vk200 rfc with 6 turns Text: MOTOROLA Order this document by MMBFJ309LT1/D SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifier Transistor N–Channel MMBFJ309LT1 MMBFJ310LT1 2 SOURCE 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage	Original	MMBFJ309LT1/D MMBFJ309LT1 MMBFJ310LT1 236AB) motorola U310 shock vk200 VK200 rfc MVM010 transistor u310 motorola 539 U310 MVM010W motorola 2443 vk200 rfc with 6 turns	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line R F P o w e r Field-Effect T ra n sisto r N-Channel Enhancement-Mode . . designed for wideband large-signal output and driver stages up to 4 0 0 M H z range. 30 W, to 400 M H z N -C H A N N E L M O S	OCR Scan	MRF137	PDF
VK200 rfc Abstract: MMBFJ309 MMBFJ309LT1 MMBFJ310 MMBFJ310LT1 MVM010W U310 shock vk200 SOT23 TRANSISTOR MARKING c3 JFET with Yos Text: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBFJ309LT1 MMBFJ310LT1 N–Channel MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W	Original	MMBFJ309LT1 MMBFJ310LT1 236AB) r14525 MMBFJ309LT1/D VK200 rfc MMBFJ309 MMBFJ309LT1 MMBFJ310 MMBFJ310LT1 MVM010W U310 shock vk200 SOT23 TRANSISTOR MARKING c3 JFET with Yos	PDF
2865002402 Abstract: 6435 fet MRF136 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistors MRF136 M RF136Y N -C hannel Enhancem ent-M ode MOSFETs . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push-pull configuration.	OCR Scan	RF136 RF136Y MRF136 MRF136Y AN215A DL110 2865002402 6435 fet	PDF
transistor KA 7808 Abstract: RF134 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal am plifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance	OCR Scan	MRF134 transistor KA 7808 RF134	PDF

MRF1550 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband	Original	MRF1550T1 AN215A, MRF1550	PDF
MRF1550N Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors MRF1550NT1 MRF1550FNT1 MRF1550T1 MRF1550FT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices	Original	AN215A, MRF1550NT1 MRF1550FNT1 MRF1550T1 MRF1550FT1 MRF1550N	PDF
EB209 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband	Original	MRF1550T1 AN215A, EB209	PDF
vk200* FERROXCUBE Abstract: MRF137 3950K MOTOROLA TRANSISTOR 974 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line 30 W 2 .0 -4 0 0 MHz N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR N-CHANNEL MOS BROADBAND RF POWER . . . designed fo r w ideband large-signal o utp ut and d river stages in the 2.0 to 400 MHz range	OCR Scan	MRF137 vk200* FERROXCUBE 3950K MOTOROLA TRANSISTOR 974	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband	Original	MRF1550T1/D MRF1550T1	PDF
motorola 5118 uhf Abstract: motorola 5118 wireless Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices	Original	AN215A, MRF1535T1 MRF1535FT1 motorola 5118 uhf motorola 5118 wireless	PDF
EB209 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband	Original	MRF1550T1/D MRF1550T1 MRF1550T1/D EB209	PDF
"RF power MOSFETs" Abstract: AN4005 AN721 MRF1550T1 VK200 A05T AN211A AN215A Text: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband	Original	MRF1550T1/D MRF1550T1 MRF1550T1 "RF power MOSFETs" AN4005 AN721 VK200 A05T AN211A AN215A	PDF
zener z8 Abstract: AN4005 A05T AN211A AN215A AN721 MRF1550T1 VK200 MRF1550 Text: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband	Original	MRF1550T1/D MRF1550T1 MRF1550T1 zener z8 AN4005 A05T AN211A AN215A AN721 VK200 MRF1550	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband	Original	MRF1535T1 AN215A,	PDF

SELF VK200 Search Results

SELF VK200 Result Highlights (5)

SELF VK200 Datasheets Context Search

equivalent for transistor tt 2206

schema electrique micro FM

MRF162

shock vk200

J141 mosfet

SELF vk200

motorola U310

136y

VK200 rfc

motorola U310

Untitled

VK200 rfc

2865002402

transistor KA 7808

MRF1550

MRF1550N

EB209

vk200* FERROXCUBE

Untitled

motorola 5118 uhf

EB209

"RF power MOSFETs"

zener z8

Untitled