Untitled
Abstract: No abstract text available
Text: PD - 96903 IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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PDF
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IRFB3507
IRFS3507
IRFSL3507
O-220AB
O-262
EIA-418.
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AN-994
Abstract: IRFB3507 IRFS3507 IRFSL3507
Text: PD - 96903B IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max.
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Original
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PDF
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96903B
IRFB3507
IRFS3507
IRFSL3507
O-220AB
O-262
EIA-418.
AN-994
IRFB3507
IRFS3507
IRFSL3507
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AN-994
Abstract: IRFB3507 IRFS3507 IRFSL3507
Text: PD - 96903B IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max.
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Original
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PDF
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96903B
IRFB3507
IRFS3507
IRFSL3507
O-220AB
O-262
EIA-418.
AN-994
IRFB3507
IRFS3507
IRFSL3507
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Untitled
Abstract: No abstract text available
Text: PD - 96903A IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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6903A
IRFB3507
IRFS3507
IRFSL3507
O-220AB
O-262
Dissi26)
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Untitled
Abstract: No abstract text available
Text: PD - 95935B IRFB3507PbF IRFS3507PbF IRFSL3507PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET D G
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Original
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PDF
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95935B
IRFB3507PbF
IRFS3507PbF
IRFSL3507PbF
O-262
O-220AB
EIA-418.
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Untitled
Abstract: No abstract text available
Text: PD - 95935B IRFB3507PbF IRFS3507PbF IRFSL3507PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET D G
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Original
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PDF
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95935B
IRFB3507PbF
IRFS3507PbF
IRFSL3507PbF
O-262
O-220AB
EIA-418.
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19-AF
Abstract: AN-994
Text: PD - 95935A IRFB3507PbF IRFS3507PbF IRFSL3507PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET D G
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Original
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PDF
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5935A
IRFB3507PbF
IRFS3507PbF
IRFSL3507PbF
O-262
O-220AB
Curren26)
19-AF
AN-994
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Untitled
Abstract: No abstract text available
Text: PD - 96903B IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max.
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Original
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PDF
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96903B
IRFB3507
IRFS3507
IRFSL3507
O-220AB
O-262
EIA-418.
|
AN-994
Abstract: No abstract text available
Text: PD - 95935B IRFB3507PbF IRFS3507PbF IRFSL3507PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET D G
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Original
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PDF
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95935B
IRFB3507PbF
IRFS3507PbF
IRFSL3507PbF
O-262
O-220AB
EIA-418.
AN-994
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IRFS350A
Abstract: No abstract text available
Text: $GYDQFHG 3RZHU 026 7 IRFS350A FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.3Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 11.5 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V
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IRFS350A
IRFS350A
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IRFS350
Abstract: sec irfs350
Text: $GYDQFHG 3RZHU 026 7 IRFS350 FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.3Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 11.5 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V
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IRFS350
IRFS350
sec irfs350
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Untitled
Abstract: No abstract text available
Text: IRFS350A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 p A Max. @ VDS= 400V ■ Low R qs<o n i - 0.254 £2 (Typ.)
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OCR Scan
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IRFS350A
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Untitled
Abstract: No abstract text available
Text: IRFS350 Advanced Power MOSFET FEATURES B V DSS - 400 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .3 Î2 11.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V
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OCR Scan
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PDF
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IRFS350
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IRFS350A
Abstract: No abstract text available
Text: IRFS350A A dvanced Power MOSFET FEATURES BVDSS — 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = 0 -3 Í2 ♦ Lower Input Capacitance lD = 11.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO -3PF ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 400V
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OCR Scan
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PDF
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IRFS350A
IRFS350A
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IRFS350
Abstract: No abstract text available
Text: IRFS350 A dvanced Power MOSFET FEATURES BVDSS — 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = 0 -3 Í2 ♦ Lower Input Capacitance lD = 11.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -3 P F ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 400V
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OCR Scan
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PDF
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IRFS350
IRFS350
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Untitled
Abstract: No abstract text available
Text: IRFS350A Advanced Power MOSFET FEATURES B ^ dss - 400 V ♦ Avalanche Rugged Technology = 0.3Q ♦ Rugged Gate Oxide Technology ^ D S o n ♦ Lower Input Capacitance lD = 11.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V
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OCR Scan
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PDF
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IRFS350A
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sec irfs350
Abstract: No abstract text available
Text: IRFS350 Advanced Power MOSFET FEATURES B ^ dss - 400 V ♦ Avalanche Rugged Technology = 0.3Q ♦ Rugged Gate Oxide Technology ^ D S o n ♦ Lower Input Capacitance lD = 11.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V
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OCR Scan
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IRFS350
sec irfs350
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