SEC IRF9540N Search Results

Contextual Info: PD - 96030 IRF9540NSPbF IRF9540NLPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF9540NS/L

IRF9540N

Contextual Info: PD - 96030 IRF9540NSPbF IRF9540NLPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF9540NS/L

Contextual Info: PD - 96030 IRF9540NSPbF IRF9540NLPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF9540NS/L

IRF9540N

Abstract: of irf9540n irf9540n to220ab ir
Contextual Info: PD 9.1437A International l R Rectifier IRF9540N PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated Vqss = -100V Ftas on = 0 .1 1 7 Q

Contextual Info: PD 9.1437A International K 3R Rectifier IRF9540N PRELIMINARY H EXFET Pow er M O SFE T • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated V q ss = -1 0 0 V F b s o n = 0 . 1 1 7 Q

IRF9540L

Abstract: IRF9540S
Contextual Info: PD - 91483D IRF9540NS/L Advanced Process Technology Surface Mount IRF9540S l Low-profile through-hole (IRF9540L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description HEXFET Power MOSFET l D l VDSS = -100V RDS(on) = 0.117Ω

IRF9540NS

Abstract: IRF9540N IRF9540NL IRF9540L
Contextual Info: PD - 91483E IRF9540NS/L Advanced Process Technology Surface Mount IRF9540NS l Low-profile through-hole (IRF9540NL) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description HEXFET Power MOSFET l D l VDSS = -100V RDS(on) = 0.117Ω

IRF9540N

Abstract: BU 11A
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1437 IRF9540N PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω

Contextual Info: PD - 91483E IRF9540NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9540NS l Low-profile through-hole (IRF9540NL) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -100V RDS(on) = 0.117Ω

IRF9540NS

Abstract: IRF9540L IRF9540NL
Contextual Info: PD - 91483E IRF9540NS/L Advanced Process Technology Surface Mount IRF9540NS l Low-profile through-hole (IRF9540NL) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description HEXFET Power MOSFET l D l VDSS = -100V RDS(on) = 0.117Ω

Contextual Info: IRF9540N TO-220AB l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Power MOSFET Description D The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

Contextual Info: PD -9.1483 International IQR Rectifier IRF9540NS PRELIMINARY HEXFET Power MOSFET • • • • • • • Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated V d s s = -1 0 0 V

IRF9540N

Abstract: 100v 23A P-Channel MOSFET SEC IRF9540N datasheet of irf9540n IRF9540n datasheet irf9540n to220ab ir
Contextual Info: PD - 91437B IRF9540N HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω G ID = -23A S Description Fifth Generation HEXFETs from International Rectifier

RF9540

Contextual Info: PD -91483C International Iö R Rectifier IRF9540NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount I RF9540S • Low-profile through-hole (IRF9540L) • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated

Contextual Info: PD - 91437B IRF9540N HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω G ID = -23A S Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: IRF9540NS/L l l l l l l l Advanced Process Technology Surface Mount IRF9540S Low-profile through-hole (IRF9540L) 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated TO-263 TO-262 Description The D2Pak is a surface mount power package capable of

100v 23A P-Channel MOSFET

Abstract: IRF9540L IRF9540S
Contextual Info: PD - 91483C IRF9540NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9540S l Low-profile through-hole (IRF9540L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -100V RDS(on) = 0.117Ω

IRF9540L

Abstract: IRF9540S
Contextual Info: PD - 91483C IRF9540NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9540S l Low-profile through-hole (IRF9540L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -100V RDS(on) = 0.117Ω

IRF9540L

Abstract: IRF9540NS IRF9540S
Contextual Info: 2002-03-01 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-164-03 IRF9540NS HEXFET D2Pak PD - 91483C IRF9540NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9540S

IRF9540N equivalent

Contextual Info: P D -9.1487 International XGR Rectifier IRFI9540N PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm P-Channel Fully Avalanche Rated

4.5V TO 100V INPUT REGULATOR

Contextual Info: PD - 95665 IRFP9140NPbF l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.117Ω G Description ID = -23A S Fifth Generation HEXFETs from International Rectifier

irfp9140npbf

Abstract: 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD - 95665 IRFP9140NPbF l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.117Ω G Description ID = -23A S Fifth Generation HEXFETs from International Rectifier

IRFP9140N

Abstract: 100v 23A P-Channel MOSFET 9140N 1492-A
Contextual Info: I , ,• I P D - 9 .1492A In ternational 10R Rectifier IR F P 9140N P R E L IM INARY HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175 °C Operating Temperature • P-Channel • Fast Switching • Fully Avalanche Rated

IRF9540N equivalent

Abstract: 117Q 3A diode International Rectifier IRFI9540N 100v 3A silicon controlled rectifier of irf9540n
Contextual Info: PD - 9.1487B International TOR Rectifier IRFI9540N PRELIMINARY HEXFET Power MOSFET • • • • • • A dvanced P rocess T echnolog y Isolated P ackage High V oltage Isolation = 2 .5K V R M S S ink to Lead C reepage Dist. = 4.8m m P -C ha nn e l