SEC IRF 540 Search Results

AN-994

Abstract: IRFB4310 IRFS4310 IRFSL4310 IRF high current n-channel irf 540 mosfet
Contextual Info: PD - 96894 IRFB4310 IRFS4310 IRFSL4310 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide Best RDS on in TO-220 l Improved Gate, Avalanche and Dynamic dV/dt

IRFB4310

Abstract: irf 540 mosfet IRFS4310 AN-994 IRFSL4310 irf 30A
Contextual Info: PD - 96894A IRFB4310 IRFS4310 IRFSL4310 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max.

IRFB4310

Abstract: irf 540 mosfet AN-994 IRFS4310 IRFSL4310 irf 100v 100A
Contextual Info: PD - 96894A IRFB4310 IRFS4310 IRFSL4310 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max.

IRFS4310

Abstract: AN-994 SL4310 irf 540 mosfet IRFS4310PBF
Contextual Info: PD - 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt

IRFS4310PBF

Contextual Info: PD - 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt

MOSFET IRF 540

Abstract: irf 540 mosfet AN-994 IRFS4310PBF
Contextual Info: PD - 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt

irf 418

Abstract: irf 48v mosfet irf 540 mosfet IRFS4310PBF
Contextual Info: PD - 14275C IRFB4310PbF IRFS4310PbF IRFSL4310PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET VDSS RDS on typ.

Contextual Info: PD - 96894A IRFB4310 IRFS4310 IRFSL4310 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max.

Contextual Info: PD - 95090B IRLR3915PbF IRLU3915PbF HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V RDS on = 14mΩ

irf 540 mosfet

Contextual Info: PD - 95090B IRLR3915PbF IRLU3915PbF HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V RDS on = 14mΩ

TO-247AC Package

Abstract: IRFP064V irf 2030
Contextual Info: PD - 94112 IRFP064V HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V l RDS on = 5.5mΩ

D7810hg

Abstract: D78C10 NEC D78C10 IC CD 4011 BCN 78C10 7810H 77fe 78C11 D7810 PCF 7900
Contextual Info: M O S S M tU fê M O S Integrated Circuit /¿ P D 7 8 I f -y 8 C 1 0 A .7 8 C 1 1A ,7 8 C 1 2 A h ï □ 3 y f j - ^ A / D V•H^ ^P D 7 8 C 1 1 A Ü 1 6 t'-y h A L U , ROM , RAM, A /D su ■4 ^^IZ^^IZÔOK CMOS 8 t ' y h • 4 ^4 'J (R O M /R A M £ iÉ 5 g T * ë £ t „

irf 2030 n

Abstract: irf 2030 IRF 545 IRFP064V
Contextual Info: PD - 94112 IRFP064V HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V l RDS on = 5.5mΩ

Contextual Info: PD - 95090 IRLR3915PbF IRLU3915PbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D

W922

Abstract: IRFIZ24E IRFZ24N EV700 irf*24n
Contextual Info: PD - 9.1673A IRFIZ24E HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 60V RDS on = 0.071Ω G Fifth Generation HEXFETs from International Rectifier

IRFIZ34N

Abstract: IRFZ34N MOSFET 150 N IRF
Contextual Info: PD - 9.1489A IRFIZ34N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.04Ω G ID = 21A S Description Fifth Generation HEXFETs from International Rectifier

IRFIZ46N

Abstract: IRFZ46N MOSFET IRF 630 IRFZ46N equivalent
Contextual Info: PD - 9.1306A IRFIZ46N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.020Ω G Description Fifth Generation HEXFETs from International Rectifier

irf 480

Abstract: IRFIZ24E IRFZ24N IRFz24n equivalent
Contextual Info: PD - 9.1673A IRFIZ24E HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 60V RDS on = 0.071Ω G Fifth Generation HEXFETs from International Rectifier

irf 44 n

Abstract: 1329B IRLIZ34N IRLZ34N
Contextual Info: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description

IRFIZ24N

Abstract: 1501a IRFZ24N irf 480 irf 044 mosfet
Contextual Info: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier

5M MARKING CODE DIODE 5A 100V

Contextual Info: PD - 95087 IRLR/U3410PbF l l l l l l l l Logic Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR3410 Straight Lead (IRLU3410) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS(on) = 0.105Ω

1501a

Abstract: IRFZ24N IRFIZ24N irf 480
Contextual Info: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier

Equivalent IRF 44

Abstract: ultra low igss pA IRL2505 IRLI2505
Contextual Info: PD - 9.1327A IRLI2505 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D

Equivalent IRF 44

Abstract: IRLIZ34N 1329B IRLZ34N e4019 mosfet irf 150 irliz34
Contextual Info: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description