SEC 525 Search Results

Contextual Info: ¥ n/ldCEM TI Voiceband Transform er: 671-1268 Features • Encapsulated version available: 671-0127 • Carries up to 120 mADC SEC Specifications {1 3 Designed to reflect 600 ohms on PR I with 600 ohms on SEC D.C. Resistance: 45 PRI: 40 ohms nominal 36 SEC:

T-13800

Abstract: T-13803 13800 T1-BOBIN T-13805 SMD23 1200 w 45 khz transformer 13803 smd 27 9 D transformer 9-0-9
Contextual Info: Transformers for T1 / CEPT / PCM Applications Available in both Thru-hole & SMD EP7 Packages Schematic "A" PRI. Schematic "B" Schematic "C" PRI. SEC. SEC. 1 6 2 5 3 4 6 2 5 3 4 1 1 2 1 Schematic "D" PRI. SEC. 6 75 Ω 5 2 100 Ω 6 3 3 120 Ω 4 4 Electrical Specifications at 25OC

TX-2G2

Abstract: TP-219 TW-216 TP-218 TW-206 TX-205 TX-226 TW-211 TK-701B tx-2c
Contextual Info: TRANSFORMERS LEADLESS SURFACE-MOUNT MODELS IMPEDANCE RATIO PRI : SEC CENTER TAP PRI SEC FREQUENCY MHz 1dB BANDWIDTH (MHz) for INSERTION-LOSS 2dB 3dB PIN-OUT (See Below) PACKAGE MODEL 1:1 1:1.5 1:2 No No No Yes No No 0.003-300 0.075-400 0.650-525 0.02-50

TP218

Contextual Info: TRANSFORMERS LEADLESS SURFACE-MOUNT MODELS IMPEDANCE RATIO PRI : SEC CENTER TAP PRI SEC FREQUENCY MHz 1dB BANDWIDTH (MHz) for INSERTION-LOSS 2dB 3dB PIN-OUT (See Below) PACKAGE MODEL 1:1 1:1.5 1:2 No No No Yes No No 0.003-300 0.075-400 0.650-525 0.02-50

st-k6

Contextual Info: TRANSFORMERS LEADLESS SURFACE-MOUNT MODELS IMPEDANCE RATIO PRI : SEC CENTER TAP PRI SEC FREQUENCY MHz 1dB BANDWIDTH (MHz) for INSERTION-LOSS 2dB 3dB FIGURE (See Below) PACKAGE PIN-OUT (See Below) MODEL 1:1 1:1.5 1:2 No No No Yes No No .003-300 .075-400 .650-525

Contextual Info: TRANSFORMERS L eadless S urface-M ount M odels IMPEDANCE RATIO PRI: SEC 1:1 CENTER TAP SEC FREQUENCY MHz IdB BANDWIDTH (MHz) for INSERTION-LOSS 2dB 3dB FIGURE (See Below) .003-300 .01-150 .120-300 2.2-400 .003-300 .075400 .650-525 2 2 134 134 134 2 2 ST-K1

QCIF

Contextual Info: Philips Semiconductors Desktop Video Products Video signal bandwidth/resolution BANDWIDTHS OF VARIOUS VIDEO SIGNALS FORMAT RESOLUTION BANDWIDTH BANDWIDTH ACTIVE RESOLUTION MBytes/sec burst 1 MBytes/sec (continuous)2 FORMAT TOTAL RESOLUTION CCIR 601 (30 Frames per Second, 4:3 Aspect Ratio)

QCIF

Abstract: resolution
Contextual Info: Philips Semiconductors Desktop Video Products Video signal bandwidth/resolution BANDWIDTHS OF VARIOUS VIDEO SIGNALS FORMAT RESOLUTION FORMAT TOTAL RESOLUTION ACTIVE RESOLUTION BANDWIDTH BANDWIDTH MBytes/sec burst 1 MBytes/sec (continuous)2 CCIR 601 (30 Frames per Second, 4:3 Aspect Ratio)

Contextual Info: OPERATING L U M 1 NOUS COL OR GREEN ABSOLUTE POWER MAX 3.7 4.3 MI N. TYP. 224.00 180.00 RATINGS AT MAX. 25° C DERATE REVERSE = 523 525 120 GREEN 100 1 kHz STORAGE 5 TEMPERATURE REFLOW SOLDERING TEMPERATURE, 20 SEC. 20 SEC. mW 1 mA 4 -1 8-0 2 TWC MAX. 183 C

led green smd 1206

Abstract: AL-HG633
Contextual Info: A-BRIGHT A-BRIGHT INDUSTRIAL CO., LTD. SURFACE MOUNT LED LAMPS 1206 Package Pure Green SMD Chip LED Lamps Part Number: AL-HG633 Package outlines & Re-flow Profile „ Reflow Temp./Time Temp. 240℃Max. 10sec Max. 5℃/sec Max. ℃ 60~120sec 4℃/sec Max. Time

2N5777 equivalent

Abstract: transistor l14g2 L14G3 L14G1-L14G2-L14G3 l14g1 equivalent L14G2 general electric h11 bulb L14G3 equivalent L14G2 color sensitive PHOTO TRANSISTOR
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL RISE MAX. MIN. MAX. PEAK EMISSION W AVELENGTH TIME TIME Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. METERS TYP. n. SEC. TYP. n. SEC. mW

L14F1 npn photo transistor

Abstract: transistor l14f1 2N5777 equivalent ge L14F1 L14f1 photo transistor photo transistor L14F1 L14F1 L14F1-L14F2 of transistor L14F1 circuit using l14f1
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL RISE MAX. MIN. MAX. PEAK EMISSION W AVELENGTH TIME TIME Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. METERS TYP. n. SEC. TYP. n. SEC. mW

AL-HG635A

Contextual Info: A-BRIGHT A-BRIGHT INDUSTRIAL CO., LTD. SURFACE MOUNT LED LAMPS 0805 Package Pure Green SMD Chip LED Lamps Part Number: AL-HG635A Package outlines & Re-flow Profile „ Reflow Temp./Time Temp. 240℃Max. 10sec Max. 5℃/sec Max. ℃ 60~120sec 4℃/sec Max. Time

Phototransistor L14G3 application

Abstract: L14F1 npn photo transistor L14G2 application note L14F1 phototransistor 2N5777 circuit using l14f1 H11A520 340 opto isolator L14F1 photo transistor 2n5777
Contextual Info: OPTOELECTRONICS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 MIN. PO@ lp=100mA 5.4mW 3.5mW 1.5mW 5.4mW 3.5 mW 1.5mW INFRARED EMITTERS FALL MAX. PEAK EMISSION RISE TIME Vp @ WAVELENGTH TIME lp= 100mA TYP. n. METERS TYP. n. SEC. TYP. n. SEC.

pin diagram for core i7 processor

Abstract: addressing mode in core i7 sec memory 32 pin pm47-32 dsp 32 c processor eb3wm 40 pin EPD controller 00FF ADSP-21065L px270
Contextual Info:  0 025< Figure 5-0. Table 5-0. Listing 5-0. The processor’s dual-ported SRAM provides 544 Kbits of on-chip storage for program instructions and data. The processor’s internal bus architecture provides a total memory bandwidth of 900 Mbytes/sec., enabling the core to access 660 Mbytes/sec. and

L14H2

Abstract: L14H1 L14F1 npn photo transistor l14h4 AA 4N35 h11 bulb 2N5777 L14F2 photo transistor L14F1 H11A3
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FA LL RISE MAX. MIN. MAX. PEA K EMISSION W AVELEN G TH TIME TIME Vp @ Pd PO@ lp=100mA lp= 100mA TYP. n. M ETER S TYP. n. SEC. T YP . n. SEC . mW

JE31

Contextual Info: PART NUMBER UNCONTROLLED DOCUMENT REV. SML-LXF1 206U P G C -T R CATHODE REFLOW PROFILE 1,60 [ 0 ,0 6 3 ] E3 8 SEC. MAX. 230 MAX. 200 175 1,90 [ 0 ,0 7 5 ] 2,00 9 0 -1 2 0 SEC. 150 125 [ 0 ,0 7 9 ] • ELECTRO-OPTICAL CHARACTERISTICS Ta =2 5 X 100 PARAMETER

Contextual Info: Transformers for T1 / CEPT / PCM Applications Available in both Thru-hole & S M D E P 7 Packages Schematic "B" Schematic "A" Schematic "C" PRI. 1 ^ y Y rm 'Y Y Y Y Y Y Y ^ • Schematic "D" SEC. -* 2 > 75 a 5 -C D 100 n oJ T Y vtyyyyyytlo 3 ^yYr/YTmrm^ 4 SEC.

photo transistor 2n5777

Abstract: L14F1 npn photo transistor 2N5777 h11 bulb 2n5777 l14f1 2N5778 2 leads photo transistor 2n5777 photo transistor 2n5778 2N5777-80 photo transistor L14F1
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F FALL RISE M AX. M IN . M A X . PEAK EM ISSION W AVELENG TH T IM E T IM E Vp @ Pd PO@ lp = 1 0 0 m A lp = 100m A TYP. n. M ETER S TYP. n. SEC. T Y P . n. SEC. mW 5.4mW

2N5777

Abstract: L14G2 application note 2N5778 2N5779 2N5780 l14h4 L9B sot photo transistor 2n5777 H11A2 H11A3
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW

PHOTO DIODE LED55C

Abstract: ssl55c LED55B photo transistor L14F1 ssl55b SSL55CF LED56F LED56 LED55C Direct replacement for ssl55c
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW

2n5777 phototransistor

Abstract: L14F1 PHOTOTRANSISTOR 2n5779 Phototransistor L14F1 L14F1 npn photo transistor LED55B photo transistor L14F1 L14G3 phototransistor npn photo transistor H11A2
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW

ssl55c

Abstract: photo transistor 2n5777 2N5779 PHOTO DIODE LED55C LED56F L14F1 LED56 LED55C H74A1 LED55B
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW

H15A1

Abstract: H15A1 opto L14F1 npn photo transistor h15a2 L14F1 phototransistor ge H15A1 photo transistor L14F1 opto h15a2 LED56 L14F2
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW