sdr sdram reference
Abstract: No abstract text available
Text: Mobile SDR SDRAM Mobile SDR SDRAM Device Operations & Timing Diagram DEVICE OPERATIONS Mobile SDR SDRAM A. DEVICE OPERATIONS ADDRESSES of 64Mb ADDRESSES of 128Mb BANK ADDRESSES BA0 ~ BA1 BANK ADDRESSES (BA0 ~ BA1) : In case x 16 : In case x 16 This Mobile SDR SDRAM is organized as four independent
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128Mb
sdr sdram reference
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512MB SDR SDRAM CHIP
Abstract: No abstract text available
Text: Mobile SDR SDRAM Mobile SDR SDRAM Device Operations & Timing Diagram DEVICE OPERATIONS Mobile SDR SDRAM A. DEVICE OPERATIONS ADDRESSES of 64Mb ADDRESSES of 128Mb BANK ADDRESSES BA0 ~ BA1 BANK ADDRESSES (BA0 ~ BA1) : In case x 16 : In case x 16 This Mobile SDR SDRAM is organized as four independent
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128Mb
200us
512MB SDR SDRAM CHIP
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sdr sdram pcb layout
Abstract: MT46H32M16LFBF sdr sdram pcb layout guidelines MT48H32M16LFBF MT46H32M16LFCK-6 MT46H32M16LFCK MT46V32M16BN AN10935 sdram pcb layout MT46V32M16BN-6
Text: AN10935 Using SDR/DDR SDRAM memories with LPC32xx Rev. 2 — 11 October 2010 Application note Document information Info Content Keywords LPC32x0, LPC32xx, LPC3220, LPC3230, LPC3240, LPC3250, SDR, SDRAM, DDR Abstract This application note covers hardware related issues for interfacing SDR
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AN10935
LPC32xx
LPC32x0,
LPC32xx,
LPC3220,
LPC3230,
LPC3240,
LPC3250,
LPC32xx
sdr sdram pcb layout
MT46H32M16LFBF
sdr sdram pcb layout guidelines
MT48H32M16LFBF
MT46H32M16LFCK-6
MT46H32M16LFCK
MT46V32M16BN
AN10935
sdram pcb layout
MT46V32M16BN-6
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Single Data Rate SDRAM Memory Controller
Abstract: A3P400 internal block diagram of mobile phone
Text: Interfaces directly to Mobile and SDR-SDRAM-CTRL Mobile Single Data Rate SDRAM Controller Core ordinary SDR Single data rate devices Supports all standard SDRAM chips and registered/unbuffered DIMMs Pipelined design achieves maximal memory-bandwidth utilization.
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MT29F2G16ABA
Abstract: SEAM-40 SMD23 MICRON POWER RESISTOR H33 SEAF-40-05 PISMO2-00006 MT29F2G16AAA MICRON 1.8V 2GB NAND MT29F1G16 PISMO2-P6960
Text: Advance‡ PISMO2-00006: Micron Mobile SDR SDRAM + NAND Module Introduction Micron PISMO Module Data Sheet PISMO2-00006: Mobile SDR SDRAM + NAND Flash Introduction The PISMO Platform Independent Storage MOdule specification provides a standard external interface to ease memory performance evaluation. This document describes
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PISMO2-00006:
PISMO2-P6960
24AA64-I/ST
09005aef82c0b66c/Source:
09005aef82c0b648
MT29F2G16ABA
SEAM-40
SMD23
MICRON POWER RESISTOR H33
SEAF-40-05
PISMO2-00006
MT29F2G16AAA
MICRON 1.8V 2GB NAND
MT29F1G16
PISMO2-P6960
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PLL103-53
Abstract: DDR6
Text: Preliminary PLL103-53 DDR SDRAM Buffer with 5 DDR or 3 SDR/3 DDR DIMMS FEATURES • • • Generates 30-output buffers from one input. Supports up to 4 DDR DIMMS or 3 SDR DIMMS and 2 DDR DIMMS. Supports 266MHz DDR SDRAM. One additional output for feedback.
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PLL103-53
30-output
266MHz
SDRAM10
SDRAM11
DDR11T
DDR11C
DDR10T
DDR10C
PLL103-53
DDR6
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Untitled
Abstract: No abstract text available
Text: AS4C32M16SA Version 2.0 512Mbit Single-Data-Rate SDR SDRAM 32Mx16 (8M x 16 x 4 Banks) 512Mbit Single-Data-Rate (SDR) SDRAM AS4C32M16SA-7TCN & AS4C32M16SA-7TIN 32Mx16 (8M x 16 x 4 Banks) Alliance Memory Inc. reserves the rights to change the specifications and products without notice.
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AS4C32M16SA
512Mbit
32Mx16
AS4C32M16SA-7TCN
AS4C32M16SA-7TIN
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TAPC640
Abstract: WED9LAPC2B16P8BC WED9LAPC2C16V4BC
Text: WED9LAPC2B16P8BC 4M x 32 SDR AM / 2M x 8 SDR AM SDRAM SDRAM EXTERNAL MEMORY SOLUTION FOR AGERE’S TTAPC640 APC640 A TM PORT CONTROLLER ATM DESCRIPTION FEATURES n Clock speeds: The WED9LAPC2B16P8BC is a 3.3V, 4M x 32 Synchronous DRAM and a 2M x 8 Synchronous DRAM array packaged in
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WED9LAPC2B16P8BC
TAPC640
WED9LAPC2B16P8BC
WED9LAPC2C16V4BC,
APC2B16P8BC
WED9LAPC2C16V4BC
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PLL103-03
Abstract: PLL202-04
Text: Preliminary PLL103-03 DDR SDRAM Buffer with 4 DDR or 3 SDR/2 DDR DIMMS FEATURES • • • Generates 24-output buffers from one input. Supports up to 4 DDR DIMMS or 3 SDR DIMMS and 2 DDR DIMMS. Supports 266MHz DDR SDRAM. One additional output for feedback.
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PLL103-03
24-output
266MHz
SDRAM10
DDR11T
SDRAM11
DDR11C
DDR10T
DDR10C
PLL103-03
PLL202-04
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Board Design Guideline
Abstract: board design guidelines TN-46-06 ddr sdram controller sdr sdram reference EP1S60
Text: Interfacing DDR SDRAM with Stratix & Stratix GX Devices December 2005 ver. 2.0 Application Note 342 Introduction Traditionally, systems featuring FPGAs used single data rate SDR SDRAM, which transmits data on each rising edge of the clock signal. The total amount of data an SDR memory device can send or receive is equal
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AGX52007-1
Abstract: SSTL-18
Text: 7. External Memory Interfaces in Arria GX Devices AGX52007-1.0 Introduction ArriaTM GX devices support external memory interfaces, including DDR SDRAM, DDR2 SDRAM, and SDR SDRAM. Its dedicated phase-shift circuitry allows the Arria GX device to interface with an external memory
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AGX52007-1
233MHz/466
SSTL-18
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phase shift
Abstract: AGX52007-1 SSTL-18
Text: 7. External Memory Interfaces in Arria GX Devices AGX52007-1.2 Introduction ArriaTM GX devices support external memory interfaces, including DDR SDRAM, DDR2 SDRAM, and SDR SDRAM. Its dedicated phase-shift circuitry allows the Arria GX device to interface with an external memory
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AGX52007-1
Hz/466
phase shift
SSTL-18
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vhdl code for sdr sdram controller
Abstract: vhdl sdram sdram verilog LC4256ZE sdram controller 4000ZE LCMXO2280C-3T100C MT48LC32M4A2 RD1010 signal path designer
Text: SDR SDRAM Controller November 2010 Reference Design RD1010 Introduction Synchronous DRAM SDRAM has become a mainstream memory of choice in embedded system memory design due to its speed, burst access and pipeline features. For high-end applications using processors such as Motorola
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RD1010
1-800-LATTICE
4000ZE
vhdl code for sdr sdram controller
vhdl sdram
sdram verilog
LC4256ZE
sdram controller
LCMXO2280C-3T100C
MT48LC32M4A2
RD1010
signal path designer
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sdram verilog
Abstract: sdram controller ispMACH M4A3 LC51024VG-5F676C LC5512MV-45F256C MT48LC32M4A2 RD1010 vhdl code for sdram controller 180lt128 vhdl code for sdr sdram controller
Text: SDR SDRAM Controller January 2003 Reference Design RD1010 Introduction Synchronous DRAM SDRAM has become a mainstream memory of choice in embedded system memory design due to its speed, burst access and pipeline features. For high-end applications using processors such as Motorola
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RD1010
RD1007)
M4A3-256/128-55YC
1-800-LATTICE
sdram verilog
sdram controller
ispMACH M4A3
LC51024VG-5F676C
LC5512MV-45F256C
MT48LC32M4A2
RD1010
vhdl code for sdram controller
180lt128
vhdl code for sdr sdram controller
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CY7C1313V18
Abstract: EP2S15 EP2S60F1020C3 SSTL-18
Text: 3. External Memory Interfaces in Stratix II & Stratix II GX Devices SII52003-4.4 Introduction Stratix II and Stratix II GX devices support a broad range of external memory interfaces such as double data rate DDR SDRAM, DDR2 SDRAM, RLDRAM II, QDRII SRAM, and single data rate (SDR) SDRAM.
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SII52003-4
Hz/600
CY7C1313V18
EP2S15
EP2S60F1020C3
SSTL-18
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SSTL-18
Abstract: CY7C1313V18 EP2S15 EP2S60F1020C3
Text: 3. External Memory Interfaces in Stratix II and Stratix II GX Devices SII52003-4.5 Introduction Stratix II and Stratix II GX devices support a broad range of external memory interfaces such as double data rate DDR SDRAM, DDR2 SDRAM, RLDRAM II, QDRII SRAM, and single data rate (SDR) SDRAM.
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SII52003-4
Hz/600
SSTL-18
CY7C1313V18
EP2S15
EP2S60F1020C3
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altera stratix ii ep2s60 circuit diagram
Abstract: CY7C1313V18 EP2S15 EP2S60F1020C3 SSTL-18
Text: 9. External Memory Interfaces in Stratix II and Stratix II GX Devices SII52003-4.5 Introduction Stratix II and Stratix II GX devices support a broad range of external memory interfaces such as double data rate DDR SDRAM, DDR2 SDRAM, RLDRAM II, QDRII SRAM, and single data rate (SDR) SDRAM.
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SII52003-4
Hz/600
altera stratix ii ep2s60 circuit diagram
CY7C1313V18
EP2S15
EP2S60F1020C3
SSTL-18
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micron ddr
Abstract: DDR266 TN4605 DDR SDRAM designline Micron DDR SDRAM designline
Text: TN-46-05 GENERAL DDR SDRAM FUNCTIONALITY TECHNICAL NOTE GENERAL DDR SDRAM FUNCTIONALITY INTRODUCTION The migration from single data rate synchronous DRAM SDR to double data rate synchronous DRAM (DDR) memory is upon us. Although there are many similarities, DDR technology also provides notable
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TN-46-05
DDR266
TN4605
micron ddr
DDR SDRAM designline
Micron DDR SDRAM designline
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MT48LC4M32B2P
Abstract: x32SDR x32s
Text: 128Mb: x32 SDRAM Features SDR SDRAM MT48LC4M32B2 – 1 Meg x 32 x 4 Banks Features Options • PC100-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle
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128Mb:
MT48LC4M32B2
PC100-compliant
4096-cycle
09005aef80872800
MT48LC4M32B2P
x32SDR
x32s
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MT48LCM32B2
Abstract: MT48LC2M3B2b5 MT48LCM32B2P MT48LCM32 Micron Technology automotive
Text: Preliminary‡ 64Mb: x32 Automotive SDRAM Features Automotive SDR SDRAM MT48LC2M32B2 – 512K x 32 x 4 Banks Features Options Marking • Configuration – 2 Meg x 32 512K x 32 x 4 banks • Plastic package – OCPL on page – 86-pin TSOP II (400 mil) standard
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MT48LC2M32B2
PC100-compliant
4096-cycle,
09005aef811ce1fe)
09005aef84d5580d
MT48LCM32B2
MT48LC2M3B2b5
MT48LCM32B2P
MT48LCM32
Micron Technology automotive
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Untitled
Abstract: No abstract text available
Text: 64Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC16M4A2 – 4 Meg x 4 x 4 Banks MT48LC8M8A2 – 2 Meg x 8 x 4 Banks MT48LC4M16A2 – 1 Meg x 16 x 4 Banks Features Options • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive
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MT48LC16M4A2
MT48LC8M8A2
MT48LC4M16A2
PC100-
PC133-compliant
4096-cycle
09005aef80725c0b
x4x8x16
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09005aef8091e6d1
Abstract: PC133 registered reference design
Text: 256Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC64M4A2 – 16 Meg x 4 x 4 banks MT48LC32M8A2 – 8 Meg x 8 x 4 banks MT48LC16M16A2 – 4 Meg x 16 x 4 banks Features Options • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive
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256Mb:
MT48LC64M4A2
MT48LC32M8A2
MT48LC16M16A2
PC100-
PC133-compliant
8192-cycle
09005aef8091e6d1
PC133 registered reference design
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09005aef8091e66d
Abstract: MT48LC16M8A2BB
Text: 128Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks Features Options • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive
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128Mb:
MT48LC32M4A2
MT48LC16M8A2
MT48LC8M16A2
PC100-
PC133-compliant
4096-cycle
4096-cycle
09005aef8091e66d
MT48LC16M8A2BB
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Untitled
Abstract: No abstract text available
Text: 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option • Configuration
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256Mb:
MT48H16M16LF
MT48H8M32LF
09005aef834c13d2
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