SDF17N60 Search Results

Contextual Info: SDF17N60GAFSHSN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)20 I(D) Max. (A)17 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)68 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300 Minimum Operating Temp (øC)-55

Contextual Info: Æ utran p r o d u c t g a t â l q q N-CHANNEL ENHANCEMENT MOS FET 'rLU.&f ABSOLUTE MAXIMUM RATINGS PARAMETER Drain- so ur ce Vo 1t . 1) Dr a in-Ga te Vo 1tage (R gs =1.0M o ) 6 0 0 V, UNITS SYMBOL (1) Gate-Source Voltage Con t inuous Drain Current Co ntinuous

Contextual Info: Contran ,nc product W.ÌÌ3Ì« N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 6 0 0 V, UNITS SYMBOL Drain-source Volt. l Dra in-Gate Vo 1tage (R g s =1.0M o ) (1) Gate-Source Voltage Con t inuous Drain Current Continuous (Tc = 25*C) Drain Current Pulsed(3)

A35 diode

Abstract: 1256C SDF17N60
Contextual Info: Æutron DFvirFs in c ._ PRODUCT OATALOQ N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Volt. l VDSS Drain-Gate Vo 1tage VDGR (Rg s =1.0M o ) (1) Gate-Source Voltage VGS Con t inuous Drain Current Continuous ID (Tc = 25°C)