Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SDE SEMICONDUCTOR Search Results

    SDE SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation

    SDE SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    486DX-CPU

    Abstract: tamagawa 486DX transistors mos retrograde well 0.35
    Text: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling


    Original     		PDF

    Q67100-H3261

    Abstract: Q67100-H3262 Q67100-H9020 Q67100-H9036
    Text: Nonvolatile Memory 2-Kbit E2PROM with I2C Bus Interface with Extended Temperature Range SDE 2526 MOS IC Features ● Word-organized reprogrammable nonvolatile memory 2 in n-channel floating-gate technology E PROM ● 256 x 8-bit organization ● + 5 V supply voltage


    Original     		Q67100-H9020 Q67100-H3261 Q67100-H3262 Q67100-H9020 Q67100-H9036 PDF

    VCU 2136

    Abstract: DPU2553 MSP2400 LED TV Screen working Theory ADC2311 IRT1250 DTI2223 APU2471 VCU2136 DIGIT2000
    Text: DIGIT2000 DIGITAL TV SYSTEM ITT SEMICOND/ INTERHETALL SDE ]> • MbfiE?]»! 00 0E 475 aSfi « I S I - T - m


    OCR Scan     		DIGIT2000 DIGIT2000" DO-41 DO-35 DO-34 55s0iS VCU 2136 DPU2553 MSP2400 LED TV Screen working Theory ADC2311 IRT1250 DTI2223 APU2471 VCU2136 PDF

    SK SMD

    Abstract: Diode zener smd SOD80 Zener diode smd marking sk smd zener diode black BAND IR LF 0038 Zener diode smd marking 22 zener smd marking CLL5221B CLL5222B CLL5224B
    Text: CENTRAL SEMICONDUCTOR SDE D • n ù T ìL B DODOSlb T i f i ■ CEN SMD Zener Diode SOD-80 Case 500mW U.S. Specification Preferred Series The Central Semiconductor CLL5221B Series Silicon Zener Diode is a high quality voltage regulator for use in industrial, commercial,


    OCR Scan     		OD-80 500mW CLL5221B CLL5246B CLL5247B CLL5248B CLL5249B CLL5250B CLL5251B CLL5252B SK SMD Diode zener smd SOD80 Zener diode smd marking sk smd zener diode black BAND IR LF 0038 Zener diode smd marking 22 zener smd marking CLL5222B CLL5224B PDF

    DME 40

    Abstract: 1F42 8410 psc ft6t 102 scr FIR 3d pace1750 mil-std-1750a pin out of scr BT 106 pic 636 WAOI
    Text: PERFORMANCE SEMICONDUCTOR SDE D • TDbEST? 000172b 32T H P S C PACE 1757M/ME p r e l im in a r y COMPLETE EMBEDDED CPU SUBSYSTEM FEATURES Programmable address wait states. Implements complete M1L-STD-1750A ISA Including optional MMU, MFSR, and BPU functions.


    OCR Scan     		000172b 1757M/ME M1L-STD-1750A P1757M 40MHz P1757ME 40MHz MIL-STD-1750A 10MHz DME 40 1F42 8410 psc ft6t 102 scr FIR 3d pace1750 pin out of scr BT 106 pic 636 WAOI PDF

    020702

    Abstract: 110 ohm resistor DS2107S DDG5557 transistors dal
    Text: DS2107S DALLAS SEMICONDUCTOR CORP 2bl4130 0DDSSS7 fl SDE D DALLAS SEMICONDUCTOR DS2107S SCSI Terminator FEATURES PIN ASSIGNMENT • Fully compliant with SCSI and SCSI-2 standards 3 16 J J 15 3 D 14 n n • Laser-trimmed 110 ohm termination resistors have 1% tolerance


    OCR Scan     		DS2107S 2bl4130 DDG5557 16-pin 020702 110 ohm resistor DS2107S transistors dal PDF

    Zener diode smd marking sot223

    Abstract: TRANSISTOR SMD MARKING CODE LF melf zener diode smd SMD SK TRANSISTOR smd dual diode code 68 Zener diode smd marking code 51 y marking sk sot-23 SMD TRANSISTOR MARKING 1B sod-80 with black band SMD DIODE zener SOT89
    Text: CENTRAL SEMICONDUCTOR SDE D • n ù T ì L B DODOSlb Tifi ■ CEN SMD Zener Diode SO D -80 Case 500m W U.S. Specification Preferred Series The Central Semiconductor CLL5221B Series Silicon Zener Diode is a high quality voltage regulator for use in industrial, commercial,


    OCR Scan     		OD-80 500mW CLL5221B OT-23 OT-89 OT-143 OT-223 Zener diode smd marking sot223 TRANSISTOR SMD MARKING CODE LF melf zener diode smd SMD SK TRANSISTOR smd dual diode code 68 Zener diode smd marking code 51 y marking sk sot-23 SMD TRANSISTOR MARKING 1B sod-80 with black band SMD DIODE zener SOT89 PDF

    TRANSISTOR SMD MARKING CODE 1K

    Abstract: DIODE smd marking code UM 41 2/DIODE smd marking code UM 41
    Text: CENTRAL SEMICONDUCTOR SDE D • n ù T ìL B DODOSlb T i f i ■ CEN SMD Zener Diode SO D -80 Case 500m W U.S. Specification Preferred Series The Central Semiconductor CLL5221B Series Silicon Zener Diode is a high quality voltage regulator for use in industrial, commercial,


    OCR Scan     		CLL5221B OT-143 OT-223 TRANSISTOR SMD MARKING CODE 1K DIODE smd marking code UM 41 2/DIODE smd marking code UM 41 PDF

    DS1360

    Abstract: DS1360S
    Text: DS1360 FULL DATA SHEET AVAILABLE - CALL 214-450-3836 DALLAS SEMICONDUCTOR CORP SDE DALLAS SEMICONDUCTOR D EblM 130 0 0 0 5 7 0 0 ^ «D A L DS1360 Phantom DAA Chip FEATURES PIN ASSIGNMENT • Single-chip DAA controller for: -M odem s - Speech interfaces • Phantom operation reports loop current changes


    OCR Scan     		ds1360 EblM130 Part-68 DS1360 DS1360S PDF

    E2526

    Abstract: No abstract text available
    Text: SIEMENS SDE 2526 A2 Nonvolatile Memory 2-Kbit E2PROM with l2C Bus Interface Preliminary Data MOS IC Features • W ord-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 256 x 8-bit organization • + 5 V supply voltage


    OCR Scan     		VPS05I21 E2526A2G Q67100-H9020 Q67100-H9 E2526 PDF

    2BL4

    Abstract: DS2009 DS2012
    Text: DS2012 DALLAS SEMICONDUCTOR CORP SDE D 2bl413ü DALLAS SEMICONDUCTOR O O O l4 b l 7 b I DAL DS2012 4 096x9 FIFO Chip FEATURES 3 PIN ASSIGNMENT • First-in, first-out memory-based architecture w c 1* • Flexible 4096 x 9 organization DeC 2 D3C 3 • Low-power HCMOS technology


    OCR Scan     		DS2012 T-W-35- 2bl413Ã 4096x9 DS2012 DS2009 DS2009 2BL4 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SDE 2526 MOS IC Nonvolatile Memory 2-Kbit E2PROM with I 2C Bus Interface with Extended Temperature Range Features • Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E PROM • 256 X 8-bit organization • + 5 V supply voltage


    OCR Scan     		25X26 25X26-5 Q67100-H9020 Q67100-H9036 Q67Semiconductor PDF

    SDE2506A2

    Abstract: SDe 2506 SDE semiconductor
    Text: SIEM ENS SDE 2506 A2 Nonvolatile Memory 1-Kbit E2PROM MOS 1C Preliminary Data Features • W ord-organized reprogrammable nonvolatile memory in n-channel floating-gate technology • 128 x 8-bit organization • 5 V supply voltage • 3 lines processor interface


    OCR Scan     		Q67100-H9018 IET0084 T00845 SDE2506A2 SDe 2506 SDE semiconductor PDF

    1S26

    Abstract: P4C116 P4C116L AD5e
    Text: PERFORMANCE SEMICONDUCTOR SDE V • 7 0 b 2 5 cl7 0001780 3äb * P S C P4C116/P4C116L ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS SCRAMS FEATURES ■ Full CMOS, 6T Cell Single 5V±10% Power Supply ■ High Speed (Equal Access and Cycle Times) -12,15/20/25/35 ns (Commercial)


    OCR Scan     		P4C116/P4C116L 7Db25R7 P4C116L Technology11' 24-Pin P4C116/L P4C116L P4C116 Mil-Bul-103 -12PC 1S26 AD5e PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SDE 2526 MOS 1C Nonvolatile Memory 2-Kbit E2PROM with I 2C Bus Interface with Extended Temperature Range Features • Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E PROM • 256 X 8-bit organization • + 5 V supply voltage


    OCR Scan     		Q67100-H9020 E1414 023SbG5 PDF

    Unitrode Semiconductor

    Abstract: No abstract text available
    Text: 1ICR0SEMI CORP/ lilATERTOülN SDE D •I cJ347cib3 0D1S4Q1 b73 B IU N IT UM7000 SERIES UM7100 SERIES UM7200 SERIES PIN DIODE T - O l - t T Features • Voltage ratings to 1000V (UM7000 • Wide varle.ty of package styles • Rated average power dissipation to 10W


    OCR Scan     		J347c UM7000 UM7100 UM7200 UM7000) MA02172 Unitrode Semiconductor PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROSENI CORP/ I1IATERTOI1IN SDE » cJ 3 4 7 clb3 RECTIFIER ASSEMBLIES 0G1227b 707 » U N I T 688 SERIES OS' High Voltage Stacks, Standard and Fast Recovery FEATURES • PIV: from lOkV to 25kV • Surge Ratings of 20A • Recovery Time Available: to 500ns


    OCR Scan     		0G1227b 500ns PDF

    IN5551

    Abstract: 1N4148 75v 150mA diode in483a zener 400v in4148 zener diode Zener Diode 1.5W DO35 100v 500ma diode Switching diode 80V 200mA zener diode 50w zener in4148
    Text: PART NUMBER INDEX MICROSEMI CORP/ WATERTOWN SDE T> WM 13M7^b3 DESCRIPTION PART NUMBER 1N645J, JTX 1N645-1J, JTX, JTXV 1N647, J, JTX 1N647-1, J, JTX, JTXV 400mA; 400mA; 400mA; 400mA; 270V 270V 480V 480V J, J, J, J, JTX JTX, JTXV JTX, JTXV JTX, JTXV 1N4883-1N4884


    OCR Scan     		1N251, 1N456 1N456A 1N457, 1N457A 1N458, 1N458A 1N459, 1N459A IN483A IN5551 1N4148 75v 150mA diode zener 400v in4148 zener diode Zener Diode 1.5W DO35 100v 500ma diode Switching diode 80V 200mA zener diode 50w zener in4148 PDF

    2N6119

    Abstract: Unitrode Semiconductor UNITRODE U-66 unijunction application note
    Text: MICROSENI CORP/ WATERTOWN p jjjg SDE » • ^347^3 GG1253b 373 M U N I T 2N6119-2N6120 Planar, TO-18, Hermetic FEATURES • Hermetically Sealed TO-18 Metal Can • Programmable Eta, R6B, lPand lv • Maximum Peak Point Current: 150nA • Minimum Valley Current to 1,5mA


    OCR Scan     		GG1253b 2N6119-2N6120 150nA T-25-09 2N6119 Unitrode Semiconductor UNITRODE U-66 unijunction application note PDF

    2n3411

    Abstract: 2N3419 2N3418
    Text: n iC R O SEH I CORP/ üiatertow n SDE D 'OMTIba POWER TRANSISTORS DG1SM77 HÜS IUNIT JAN, JANTX, & JANTXV 2N3418 JAN, JANTX, & JANTXV 2N3419 JAN, JANTX, & JANTXV 2N3420 JAN, JANTX, & JANTXV 2N3421 3 Amp, 80V, Planar NPN FEA TU RES • Meets MIL-S-19500/393


    OCR Scan     		DG1SM77 2N3418 2N3419 2N3420 2N3421 MIL-S-19500/393 1003C T347Tb3 2N3418-2N3421 2n3411 2N3419 2N3418 PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROSEtll CORP/ WATERTOWN SDE D • cJ347cîb3 ODläata 511 ■ U N I T COMPUTER DIODE 1N4450J.N4451, 1N4453 Switching T -e J -a l FEATURES • Metallurgical Bond • Planar Passivated • DO-35 Package ABSOLUTE MAXIMUM RATINGS, AT 25'C 1N4450 1N4451 1N4453


    OCR Scan     		J347c 1N4450J N4451, 1N4453 1N4450 1N4451 200mAdc. 100mA 200mA PDF

    UM7108

    Abstract: MICROWAVE DIODE CORP UM7006 UM7000 UM7001 UM7002 UM7100 UM7101 UM7102 UM7200
    Text: 1ICR0SEMI CORP/ lilATERTOülN SDE D •I cJ347cib3 0D1S4Q1 b73 B IU N IT UM7000 SERIES UM7100 SERIES UM7200 SERIES PIN DIODE T - O l - t T Features • Voltage ratings to 1000V (UM7000 • Wide varle.ty of package styles • Rated average power dissipation to 10W


    OCR Scan     		UM7000) UM7000 UM7100 UM7200 cJ347cib3 MA02172 UM7108 MICROWAVE DIODE CORP UM7006 UM7001 UM7002 UM7101 UM7102 PDF

    U2TA510

    Abstract: Unitrode Semiconductor U2TA506
    Text: MICROSEMI CORP/ ÜIATERTOÜIN SDE D c13M7cï b 3 0D1E507 POWER DARLINGTONS- IUNIT U2TA506 U2TA508 U2TA510 3 Amp, 100V, Planar NPN, Plastic FEATURES • High Current Gain: 500 min. @ lc = 3A • Low Saturation Voltage: as low as 1.5V max. @ lc = 3A • Economic Plastic Molded Construction


    OCR Scan     		13M7cï 0D1E507 U2TA506 U2TA508 U2TA510 U2TA51C 10MHz 300/is; U2TA506, U2TA510 Unitrode Semiconductor PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROSEMI CORP/ lilATERTOUN SDE D RECTIFIER ASSEMBLIES • Dai22bl 2flb ■ U N I T JANTX 483-1 Three Phase Bridges, 25 Amp, M ilitary Approved jantx 483-3 DESCRIPTION This military high-current three phase bridge series is assembled with diodes which have been subjected to TX type


    OCR Scan     		Dai22bl MIL-S-19500/483 PDF