SD10425 Search Results

Contextual Info: JHltron PRODUCT DEVICES.INC. N-CHANNEL ENHANCEMENT MÜS FET 3301 E L E C T R O N I C S W A Y • W E S T P A L M BEACH, F L O R I D A 3 3 4 0 7 TEL: 407 8 4 8 - 4 3 1 1 • TLX: 5 1 - 3 4 3 5 « F A X : (407) 0 6 3 - 5 9 4 6 MAXIMUM SYMBOL PARAMETER D r □ in-source Volt.(l)

Contextual Info: Æ w t x a n PRODUCT CATÂLO' DEVI C E S . I N C . N -CH AN N EL ENHANCEMENT MOS F E T 1000V, 2.0A, 6. On ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER Drain-source Volt. l Dra in-Ga te Vo Itage (RGs=1.0Mn) (1) Gate-Source Voltage Cont inuous Drain Current Continuous

SD10425

Abstract: diode GF
Contextual Info: Æ w t x a n PRODUCT CATÂLO' DEVI C E S . I N C . N-CHANNEL ENHANCEMENT MOS FET 1000V, 2.0A, 6. On ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER Drain-source Volt. l Dra in-Ga te Vo Itage (RGs=1.0Mn) (1) Gate-Source Voltage Cont inuous Drain Current Continuous

Contextual Info: Æ iitr o n DEVICES.INC. 3301 ELECTRONICS WAY • WEST PALM BEACH, FLORIDA 33407 TEL: 407 848-4311 • TLX: 51-3435 • FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET 1000V, A B S O L U T E MAXIMUM R A T I N G S PARAMETER SYMBOL Dr a i n - s o u r c e V o l t . ( l )