SD1014 Search Results

transistor rf vhf

Contextual Info: SD1014-06 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 15 WATTS GP = 6.3 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The SD1014-06 is an epitaxial silicon NPN planar transistor designed primarily for VHF mobile communications. This

SD1014-02

Contextual Info: SD1014-02 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com 175 MHz !" 12.5 Volts !" Common Emitter !" !"POUT = 15 W Min.

SD1012-09

Abstract: SD1072 T5400 SD1273 SD1098-03
Contextual Info: RF NPN Power Transistors Part Number Microsemi Division Package Outline • SD1483 SD1015 SD1013 SD1013-03 SD1019 SD1019-05 SD1441 SD1273 SD1012 SD1012-09 SD1166 SD1127 SD1012-03 SD1143 SD1143-01 SD1013-09 SD1062 SD1272 SD1272-02 SD1014-02 SD1014-06 SD1070

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1014-06 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 15 WATTS GP = 6.3 dB MINIMUM COMMON EMITTER CONFIGURATION

SD1014-02

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1014-02 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • 175 MHz 12.5 VOLTS GOLD METALIZATION POUT = 15 W MINIMUM GP = 6.3 dB COMMON EMITTER CONFIGURATION

SD1014-06

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1014-06 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 15 WATTS GP = 6.3 dB MINIMUM COMMON EMITTER CONFIGURATION

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1014-06 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 15 WATTS GP = 6.3 dB MINIMUM COMMON EMITTER CONFIGURATION

max3618

Contextual Info: SD1014-02 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW DESCRIPTION KEY FEATURES The SD1014-02 is an epitaxial silicon NPN planar transistor designed primarily for VHF mobile and marine transmitters. The device utilizes emitter ballasting resistors and improved metallization

mobile rf power amplifier transistor

Abstract: SD1014-1
Contextual Info: 04C D | 7 ^ 2 3 7 S G S -T H O M S O N _ G00QG17 E | MICROWAVE SOLID T SD1014-1 THOMSON-GSF COMPONENTS CORPORATION Montgomeryville, PA 18936 • 215 362-8500 ■ TWX 510-661 -7299 VHF COMMUNICATIONS TRANSISTOR .230 DESCRIPTION .220 This epitaxial silicon NPN-planar transistor is designed primarily for

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

SDQIE1005

Abstract: sd1009 sd1008 falco SD1005 SD1016 sdl01 SD1028 SD1024 SD1007
Contextual Info: Power Inductor Shielded-SMT Square 12 x 12 mm SDQIE1005 Series POWER INDUCTORS Used in high frequency DC/DC converters. Magnetically shielded for low EMI radiation. Medium current capacity. Low DC resistance. Inductance range from 470 nH to 1.0 mH. Energy storage limit of 150 µJ.

UPC8236

Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Contextual Info: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

MRF245

Abstract: PT8828 BFY70 J0303 CM-501 sd1238 2N6096 RF Transistor S10-12 2N4932 BLY94
Contextual Info: 960. 1215 MHz class C pulse for DME/IFF/TACAN transistors pour applications D M E /IFF/TAC A N puisées, classe C TYPE PACKAGE CONFIG. V cc V SD 1528 .280 4L STU D (A) S D 1528-1 .280 4LSL (A) S D 1528-8 .250 2LFL HERM SD 1530 .280 4L STU D (A) SD 1530-1

PT8811

Abstract: PT8740 transistor pt4544 PT8828 RF Transistor S10-12 2N6095 SD1076 MRF510 MM1669 2N3563 REPLACEMENT
Contextual Info: cross reference liste d'équivalence THOMSON-CSF THOMSON-CSF pro d u ct line for RF pow er tran sisto rs has su cce ssfully cross referenced m any co m p e titive tran sisto r products. In m ost cases, these replacem ent tran sisto rs d ire ctly replace the co m p e titive pa rts for DC and RF p a ram eters in a ctu al operating system s. It is possible,

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

Cross Reference power MOSFET

Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
Contextual Info: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258

philips ecg master replacement guide

Abstract: ecg semiconductors master replacement guide ECG transistor replacement guide book free philips ecg semiconductors master replacement guide oz 8602 gn AC digital voltmeter using 7107 smd glass zener diode color codes cd 1619 CP fm radio russian transistor cross-reference yd 7377
Contextual Info: Chapter 7 Component Data and References Component Data None of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete

SD1428

Abstract: M113 M135
Contextual Info: SILICON POWER TRANSISTORS VHP A range of common-emitter, bipolar devices are available for high band FM service in portable, mobile and base station applications. .380 4L STUD M135 TO 60 (M137) 136-175 MHz CLASS C, COMMON EM ITTER, HIGH BAND FM PART NO.

BA 7891 NG

Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
Contextual Info: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进

9033 transistor

Abstract: PT8828 2N4932 PT8740 BLW27 BLX66 sd1315 BLY94 MM1669 PT8811
Contextual Info: 0.75. 4.2 GHz microwave transistors for class C operation O transistors hyperfréquences, classe C TYPE TH 1002 TH 1005 TH 1010 TH 2001 TH 2003 TH 2005 TH 2302 TH 2304 TH 2307 TH 3000 TH 3001 TH 3003 TH 3005 TH 4200 TH 4201 2 IM 4428 2N 4429 2N 4430 2N 4431

BFY70

Abstract: PT8828 CM45-12A THB598 PT8811 BLY22 sd1451 MRF245 PT8710 PT9780
Contextual Info: wideband VHF - UHF class C for E C M and radio links applications applications large bande VHF-UHF, classe C, contre mesure et faisceaux hertziens PACKAGE TYPE C O NFIG. Pout Frequency Pin range W (W) (M Hz) Vcc (V) 1H0MS0N-CSF GP min (dB) m in (% ) m ax

LE79Q2281

Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security