PG-SCT595
Abstract: pnp transistor 313 smd marking 52 PG-SCT595-5 PG-SCT-595-5 PG-SCT-595
Text: Low Dropout Voltage Tracking Regulator TLE 4250-2 Feature Overview • • • • • • • • • • • • • 50 mA Output Current Capability Tiny SMD-Package PG-SCT595-5 with lowest thermal resistance Low Output Tracking Tolerance Stable with Small Ceramic Output Capacitor
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PG-SCT595-5
PG-SCT595-5
PG-SCT595
pnp transistor 313 smd
marking 52
PG-SCT-595-5
PG-SCT-595
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Untitled
Abstract: No abstract text available
Text: SMBTA56M PNP Silicon AF Transistor 4 High breakdown voltage Low collector-emitter saturation voltage 5 Complementary type: SMBTA06M NPN 3 2 1 VPW05980 Type Marking SMBTA56M s2G Pin Configuration 1=B 2=C 3=E Package 4 n.c. 5 = C SCT595 Maximum Ratings
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SMBTA56M
SMBTA06M
VPW05980
SCT595
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marking cdm
Abstract: vdr datasheet JESD22-A114 PG-SCT595-5
Text: Low Dropout Linear LED Driver TLE 4240-2/3 M Features • • • • • • • • • • • Typ. 58 mA constant output current Low dropout voltage Tiny SMD package PG-SCT595-5 Open load detection Version TLE 4240-3 M only 45 V input voltage operation range
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PG-SCT595-5
PG-SCT-595
marking cdm
vdr datasheet
JESD22-A114
PG-SCT595-5
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SCT595
Abstract: SCT-595 DIN 6784 SCT595-5-1 sct595 infineon DIN6784 Package and Thermal Information 334 k
Text: Package and Thermal Information SCT595-5-1 Footprint/Dimensions 2.9 ±0.2 2.2 B 1.4 1.1 max 1.2 +0.1 -0.05 (0.3) 1 0.95 0.25 M B 2 3 GND 0.3 +0.1 -0.05 10˚max 1.6 ±0.1 0.5 0.8 4 10˚max 5 0.1 max +0.2 acc. to DIN 6784 2.6 max 1.9 2.9 A 0.95 Reflow soldering
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SCT595-5-1
SCT595
SCT595
SCT-595
DIN 6784
SCT595-5-1
sct595 infineon
DIN6784
Package and Thermal Information
334 k
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TLE4250-2G
Abstract: TLE4250 TLE4250-2 cq 532 TLE4250 2G TLE4250-2G download HLG09053 HLG09090 JESD51-2 cq 531
Text: Data sheet, Rev. 1.0, July 2007 TLE4250-2 Low Dropout Voltage Tracking Regulator Automotive Power Low Dropout Voltage Tracking Regulator 1 TLE4250-2 Overview Features • • • • • • • • • • • • • • 50 mA Output Current Capability Tiny SMD-Package PG-SCT595-5 with lowest
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TLE4250-2
PG-SCT595-5
PG-SCT595-5
TLE4250-2G
TLE4250
TLE4250-2
cq 532
TLE4250 2G
TLE4250-2G download
HLG09053
HLG09090
JESD51-2
cq 531
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4296
Abstract: AEB02312 AEP02253 AES02313 B45196P3335M209 SCT-595 vdr 10 50V epcos CAPACITOR, Ceramic SMD type CECC, 50V, 10 AG515
Text: Low-Drop Voltage Regulator TLE 4296 Features • • • • • • • • • • • • Three versions: 3.0 V, 3.3 V, 5.0 V Output voltage tolerance £ ± 4% Very low drop voltage Output current: 30 mA Inhibit input Low quiescent current consumption
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SCT-595
4296G
Q67006-A9339
Q67006-A9340
Q67006-A9372
4296
AEB02312
AEP02253
AES02313
B45196P3335M209
SCT-595
vdr 10 50V epcos
CAPACITOR, Ceramic SMD type CECC, 50V, 10
AG515
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4296
Abstract: AEB02312 AEP02253 AES02313 SCT-595 TLE4296GV50 TLE 4296G V50
Text: TLE 4296 Low-Drop Voltage Regulator Target Data Features • • • • • • • • • • • • Three versions: 3.0 V, 3.3 V, 5.0 V Output voltage tolerance ≤ ± 4% Very low drop voltage Output current: 30 mA Inhibit input Low quiescent current consumption
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SCT-595
4296G
Q67006-A9339
Q67006-A9340
Q67006-A9372
4296
AEB02312
AEP02253
AES02313
SCT-595
TLE4296GV50
TLE 4296G V50
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A940
Abstract: Q67006-A9410 SCT-595 Q67006-A9395 AEB02662 AEP02661 Q67006-A9409 SCT595 TLE4295G
Text: TLE 4295 Low-Drop Voltage Regulator Preliminary Data Sheet Features • • • • • • • • • • • • Three versions: 3.0 V, 3.3 V, 5.0 V Output voltage tolerance ≤ ± 4% Very low drop voltage Output current: 30 mA Power fail output Low quiescent current consumption
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SCT-595
4295G
Q67006-A9410
Q67006-A9409
Q67006-A9395
A940
Q67006-A9410
SCT-595
Q67006-A9395
AEB02662
AEP02661
Q67006-A9409
SCT595
TLE4295G
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Q67006-A9410
Abstract: smd transistor 023 AEB02662 AEP02661 Q67006-A9395 Q67006-A9409 SCT-595
Text: TLE 4295 Low-Drop Voltage Regulator Data Sheet Features • • • • • • • • • • • • Three versions: 3.0 V, 3.3 V, 5.0 V Output voltage tolerance £ ± 4% Very low drop voltage Output current: 30 mA Power fail output Low quiescent current consumption
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SCT-595
4295G
Q67006-A9410
Q67006-A9409
Q67006-A9395
Q67006-A9410
smd transistor 023
AEB02662
AEP02661
Q67006-A9395
Q67006-A9409
SCT-595
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SCT-595
Abstract: transistor b 595 AEB02189 AED02191 AED02192 AED02193 AED02194 AEP02253 AES02190 Q67006-A9304
Text: 5-V Voltage Regulator TLE 4286 G Features • 15 mA output current capability • 1 µA current consumption in standby mode • Low quiescent current consumption 60 µA in ON mode • Inhibit input • Very small SMD-Package SCT-595 • Wide operation range: 6.2 V to 42 V
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SCT-595
Q67006-A9304
SCT-595.
SCT-595
transistor b 595
AEB02189
AED02191
AED02192
AED02193
AED02194
AEP02253
AES02190
Q67006-A9304
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SCT595
Abstract: smd transistor 312
Text: Low-Drop Voltage Regulator TLE 4295 Preliminary Data Sheet Features • • • • • • • • • • • • Three versions: 3.0 V, 3.3 V, 5.0 V Output voltage tolerance ≤ ± 4% Very low drop voltage Output current: 30 mA Power fail output Low quiescent current consumption
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SCT-595
Q67006-A9410
Q67006-A9409
Q67006-A9395
4295G
SCT-595
SCT595
smd transistor 312
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AEB02186
Abstract: AED02191 AED02192 AED02193 AED02748 AEP02279 AES02187 Q67006-A9328 SCT-595
Text: 5-V Voltage Regulator TLE 4285 G Features • • • • • • • • 15 mA current capability Low quiescent current consumption: 100 µA Power fail output Very small SMD-Package SCT-595 Wide operation range: up to 45 V Wide temperature range: – 40 °C to 150 °C
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SCT-595
Q67006-A9328
SCT-595.
AEB02186
AED02191
AED02192
AED02193
AED02748
AEP02279
AES02187
Q67006-A9328
SCT-595
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sct595
Abstract: AEB02189 AED02191 AED02192 AED03058 AED03073 AEP02253 AES02190 Q67006-A9304 SCT-595
Text: 5-V Voltage Regulator TLE 4286 G Features • 15 mA output current capability • 1 µA current consumption in standby mode • Low quiescent current consumption 60 µA in ON mode • Inhibit input • Very small SMD-Package SCT-595 • Wide operation range: 6.2 V to 42 V
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SCT-595
Q67006-A9304
SCT-595.
sct595
AEB02189
AED02191
AED02192
AED03058
AED03073
AEP02253
AES02190
Q67006-A9304
SCT-595
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SOT323 reflow
Abstract: All smd Packages sct-595 sot-23 dual infrared transistor CECC 00802 reflow profile 00802 SC-75 SCT-595 sod323 reflow
Text: Notes on Processing Component Placement The ability to place semiconductors depends very much on the type involved. Up to a pitch size of 1.27 mm, mechanical centering by tools of an automatic component placement machine suffices, e.g. jaws and centering units. Multiple-pin ICs have to be
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SCT-595
HLG09053
SCT-598
HLG09183
HLG05516
HLG05520
MW-12
HLG05819
MW-16
HLG09056
SOT323 reflow
All smd Packages sct-595 sot-23
dual infrared transistor
CECC 00802
reflow profile 00802
SC-75
SCT-595
sod323 reflow
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ic 7912
Abstract: 7912 7912 ic datasheet DATA SHEET OF IC 7912 Ic D 1708 ag TRANSISTOR 7912 BGB550 SCT595 TRANSISTOR C 557 B transistor K 1352
Text: P r e l i m i n a ry d a t a s h e e t , B G B 5 5 0 , J u ly 2 0 0 1 y BGB 550 li m in ar Mirror Biased Transistor P re MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-07-31 Published by Infineon Technologies AG,
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D-81541
BGB550
10max
ic 7912
7912
7912 ic datasheet
DATA SHEET OF IC 7912
Ic D 1708 ag
TRANSISTOR 7912
SCT595
TRANSISTOR C 557 B
transistor K 1352
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barcode label infineon
Abstract: SOT89 marking GA label infineon barcode SOT89 MARKING CODE 43 sot143 Marking code 53 marking code 51 sot 363
Text: GaAs Components Package Information 5 Package Information Discrete and RF Semiconductors Packages Marking Layout SOT-143, MW-4, SCT-595, SCT-598 EH S 46 Manufacturer Date code Year/Month Type code EH S 46 Example 1994, June BCW 66 H Marking Layout SC-75, SOT-343, SOT-363, P-TSFP-4
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OT-143,
SCT-595,
SCT-598
SC-75,
OT-343,
OT-363,
OT-223,
MW-12
OT-89
MW-12
barcode label infineon
SOT89 marking GA
label infineon barcode
SOT89 MARKING CODE 43
sot143 Marking code 53
marking code 51 sot 363
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ist airflow
Abstract: AEB03001 AED02745 AED02908 AEP02906 SCT-595
Text: Low-Drop LED Driver TLE 4240 G Target Data Features • • • • • • • • • • • Output current tolerance ≤ ± 20% 60 mA output current Low drop voltage Suitable for use in automotive electronics Wide operation range: up to 45 V Wide temperature range: – 40 °C ≤ Tj ≤ 150 °C
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SCT-595
ist airflow
AEB03001
AED02745
AED02908
AEP02906
SCT-595
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142001
Abstract: BFP490 SCT595 SCT-595
Text: SIEGET 25 BFP490 NPN Silicon RF Transistor 4 For high power amplifiers 5 Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 8.5 dB at 1.8 GHz 3 Transition frequency fT > 17 GHz 2 Gold metallization for high reliability 1 SIEGET 25 GHz fT - Line
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BFP490
VPW05980
SCT595
200mA
Aug-14-2001
142001
BFP490
SCT595
SCT-595
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TA 490
Abstract: SCT-595 490 transistor 09326
Text: SIEGET 25 BFP 490 NPN Silicon RF Transistor 4 For high power amplifiers 5 Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 9.5 dB at 1.8 GHz 3 Transition frequency fT > 17 GHz 2 Gold metallization for high reliability 1 SIEGET 25 GHz fT - Line
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VPW05980
SCT-595
200mA
Dec-13-1999
TA 490
SCT-595
490 transistor
09326
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093.266
Abstract: 09326 V201200 equivalent transistor K 3531 IC 7479 SPICE 2G6 490 transistor BFP490
Text: SIEGET 25 BFP 490 NPN Silicon RF Transistor 4 For high power amplifiers Compression point P-1dB = 26.5 dBm at 1.8 GHz 5 maxim. available Gain Gma = 8.5 dB at 1.8 GHz Transition frequency fT > 17 GHz Gold metallization for high reliability SIEGET 25 GHz fT - Line
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VPW05980
SCT-595
200mA
Nov-17-2000
093.266
09326
V201200
equivalent transistor K 3531
IC 7479
SPICE 2G6
490 transistor
BFP490
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label infineon barcode
Abstract: barcode label infineon E6327 SC-75
Text: Package Information Tape and Reel DIN IEC 286-3 34 5 Please consult your nearest Infineon sales offices (see list of addresses) if you have any queries relating to additional dimensions, dimensional tolerances or variations. 345 Data Book 1 2000-09-01 Package Information
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CPWG9321
MW-12
CPWG5900
MW-16
CPWG9093
label infineon barcode
barcode label infineon
E6327
SC-75
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P-SOT-143
Abstract: CSY210 Type CF 739 Marking Ordering Code MSs P-SOT343-4-1 cly5 P-SOT143-4-1 Q62702-F1215 G69 marking
Text: GaAs Components Infineon t »c h n o !o g i ss Alphanumeric Type Index 12 Alphanumeric Type Index GaAs RF-Transistors, MMICs and Modules Type Marking Ordering Code Package Page BGV 503 BGV 503 Q62702-L0132 P-TSSOP-10-1 170 BGV 903 BGV 903 Q62702-L0131 P-TSSOP-10-1
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CFY30
1900C
Q62702-L0132
Q62702-L0131
Q62702-F1215
Q62702-F1391
Q62705-K0603
Q62705-K0604
Q62702-G0116
P-SOT-143
CSY210
Type CF 739 Marking Ordering Code MSs
P-SOT343-4-1
cly5
P-SOT143-4-1
G69 marking
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N-Channel, Dual-Gate FET
Abstract: CF750 GaAs pHEMT Low Noise MMIC Amplifier sot-343 N-channel dual-gate GaAs MESFET
Text: Ga As Components Infineon ? a c Kn o ! o 9 i a s Selection Guide 2 Selection Guide GaAs RF-Transistors, MMICs and Modules. 5 Dual-Gate GaAs F E T s.
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OT-363
OT-363
VQFN-16-2
SCT-598
N-Channel, Dual-Gate FET
CF750
GaAs pHEMT Low Noise MMIC Amplifier sot-343
N-channel dual-gate GaAs MESFET
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infineon reflow
Abstract: No abstract text available
Text: GaAs Components In fineon Notes on Processing 6 Notes on Processing Component Placement The ability to place semiconductors depends very much on the type involved. Up to a pitch size of 1.27 mm, mechanical centering by tools of an automatic component placement machine suffices, e.g. jaws and centering units. Multiple-pin ICs have to be
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OCR Scan
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th01-01-01
P-TSSOP-10-2
P-VQFN-24-3
infineon reflow
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