SCS THYRISTOR Search Results

TKAL 240

Abstract: TKAL
Contextual Info: Æ T SCS-THOMSON ^ 7# MOMitlÊTrGMDÊS GENERAL PURPOSE & INDUSTRIAL HIGH POWER RECTIFIER DIODES & THYRISTORS > 100 A «ALTERNISTORS» - BIDIRECTIONAL DEVICES FOR REACTIVE CIRCUITS AND FREQUENCIES UNDER FOR 400 Hz Type VDRM V 100 Arms / Tcase TKAL TKAL TKAL

Thyristor mw 134

Abstract: scs thyristor l1a marking BRY62 Tetrode pnpn
Contextual Info: BRY62 J v _ SILICON P-N -P-N PLANAR TETRODE THYRISTOR Planar p-n-p-n trigger device in a m icrominiature plastic package. It is intended for use as a program­ mable trigger device SCS = silicon controlled switch . Q UICK REFERENCE D A T A

BTW69-200N

Abstract: scr 122 btw69200n 69200N LT 7237 SCR 1989
Contextual Info: 3ÜE D • 7^237 00314G2 b 'T-zs-n SCS-THOMSON IMiOraOiDOi BTW69-200N -> 1200N s G S-THOMSON THYRISTORS ■ ■ ■ ■ ■ GLASS PASSIVATED CHIP HIGH STABILITY AND RELIABILITY HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT EASY MOUNTING ON HEATSINK DESCRIPTION

scs thyristor

Abstract: TO72 package
Contextual Info: NTE239 Silicon Controlled Switch SCS Description: The NTE239 is a silicon controlled switch in a TO72 type package designed for use as a driver for a numerical indicator tube and switching applications. Features: D Selective Breakover Voltage D Low ON Voltage

scs thyristor

Abstract: icer capacitor NTE239
Contextual Info: NTE239 Silicon Controlled Switch SCS Description: The NTE239 is a silicon controlled switch in a TO72 type package designed for use as a driver for a numerical indicator tube and switching applications. Features: D Selective Breakover Voltage D Low ON Voltage

cb 478

Abstract: CB-480 CB-478 THDG516C
Contextual Info: SCS-THOMSON GENERAL PURPOSE & INDUSTRIAL HIGH POWER RECTIFIER DIODES & THYRISTORS > 100 A GATE TURN-OFF THYRISTORS GTO Type •t c m A VDRM (V) Vr r m * (V) ■t r m s (A) Tcase (°C) ■t s m (A) Rth (°C/W) Package THDG 224 S THDGT 224 S THDG 225 S

606-4

Abstract: sensitive gate thyristors
Contextual Info: / Z T SCS-THOMSON GENERAL PURPOSE & INDUSTRIAL HO [fiì ILi gTO®M(gS MEDIUM POWER THYRISTORS & TRIACS < 100 A THYRISTORS PLASTIC SENSITIVE GATE THYRISTORS Tamb = 25°C Type <0 Vr r m (A See NOTE 4 Arms / Tçonnex. = 25°C TLS 106-05— 6 TLS 107-05— 6

Contextual Info: ^ 5 3 ^ 3 1 0025444 323 « A P X N AMER PHILIPS/DISCRETE BRY62 L7E D 7 V SILICON P-N-P-N PLANAR TETRODE THYRISTOR Planar p-n-p-n trigger device in a microminiature plastic envelope. It is intended for use as a program­ mable trigger device SCS = silicon controlled switch .

TYN408G

Abstract: tyn 1225 tyn 682
Contextual Info: r Z J SCS-TNOMSON ^ 7# GENERAL PURPOSE & INDUSTRIAL MogœiiL[iM MôÊi MEDIUM POWER THYRISTORS & TRIACS < 100 A STANDARD THYRISTORS PLASTIC CASE Tamb = 25°C •o Type See NOTE V (A) 4 Arms I T e a s e = 90°C TXN / TYN 054 — VRRM = VDRM 004 Tj = 110°C

trisil an overvoltage protection device

Contextual Info: THDT51 THDT65 SCS-THOMSON im TRISIL FOR SLIC PROTECTION FEATURES • DUAL ASYMETRICAL TRANSIENT SUPPRESSOR ■ PEAK PULSE CURRENT: Ip p = 30 A, 10/1000 |os. . HOLDING CURRENT = 150 m A m in ■ BREAKDOWN VOLTAGE -THDT51 =51 V -TH D T65 = 65 V. . LOW DYNAMIC CHARACTERISTICS

BTW68-200N

Abstract: 1200N T25-17 BTW68-1000N
Contextual Info: 3QE ì> r z 7 Ä T# • 7=52^237 00313=10 3 ■ - " T - Z S - n SCS-THOMSON «^ [1L I C T © « S BTW68-200N -> 1200N S G S-TH0MS0N THYRISTORS ■ ■ ■ ■ GLASS PASSIVATED CHIP HIGH STABILITY AND RELIABILITY HIGH SURGE CAPABILITY EASY MOUNTING ON HEATSINK

ESM thyristor

Abstract: thyristor disc Vrrm 20000 MDF656 esm 2000 thyristor disc Vrrm 2000 mu 86 452 thyristor sgs Thomson Thyristor DFB51 DF 652
Contextual Info: / = 7 SCS-THOMSON Ä 7# GENERAL PURPOSE & INDUSTRIAL RülDg|S@II!JCT8@liîOÔËS HIGH POWER RECTIFIER DIODES & THYRISTORS > 100 A M 771 M 779 b CB-479 CB-450 FAST RECOVERY RECTIFIER DIODES Type V RRM Tj max V <°C) (A) SV 11. F (R) SV 15. F (R) 800— 2000

diode lt 205

Abstract: thyristor 12V 1A
Contextual Info: /S T SCS-THOMSON ö^O !MSi(gir^(QM(g§ MDS35 DIODE / THYRISTOR MODULE PRELIMINARY DATASHEET FEATURES • V d r m = V r r m UP TO 1200 V ■ lT(AV = 25 A ■ HIGH SURGE CAPABILITY ■ INSULATED PACKAGE : INSULATING VOLTAGE 2500 V{RMS) DESCRIPTIO N The MDS35 family are consist of one rectifier

Diode LT 410

Contextual Info: F = 7 SCS -THOMSON * 7 i» MDS35 M 3 © iL iC T [i» g S DIODE /THYRISTORMODULE FEATURES • V d rm = V rrm UP T 0 1200 V ■ lT(AV = 25 A ■ HIGH SURGE CAPABILITY ■ INSULATED PACKAGE: INSULATING VOLTAGE 2500 V(rmS) DESCRIPTION The MDS35 family are constitued of one rectifier

F0810MH

Abstract: F0810 L125 FAST SWITCHING scr
Contextual Info: i & m - SCS-THOMSON ILI F0810XH FAST SWITCHING SCR fe a tu r es • It RMS = 8 A = 200V to 800V a tq = 20^ts max , V drm DESCRIPTION The F0810xH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for high frequency

diode sy-170

Abstract: YL-1050 siemens rs 1003 TH-558 electron tube 7527 siemens rs 3060 cj yl 1042 yl 1050 tetrode siemens rs 1002 YL1057
Contextual Info: Contents Selection Tables 5 8 Equivalent Transmitter Tubes 15 Symbols and Terms 17 Explanations on Technical Data 21 Data Sheets 37 Early Transmitter Tube Models 412 SCS on the Internet Creating new links er W vice W o rl d As of now you can tie up with Passive Components

Thyristor mw 134

Abstract: transistor KIA-70 Emitter Turn-Off thyristor scs thyristor BRY62 TRANSISTOR 1383 LT99 L7E transistor M.H. Transistor 1383 transistor
Contextual Info: • bbsa'm □ □25l444 323 ■ APX N AMER PHILIPS/DISCRETE BRY62 L7E ]> SILICON P-N-P-N PLANAR TETRODE THYRISTOR Planar p-n-p-n trigger device in a m ic ro m in ia tu re plastic envelope. It is intended fo r use as a program ­ m able trigger device SCS = silico n co n tro lle d sw itch .

DIAC ecg6407

Abstract: ECG6407 ECG6411 ECG6408 DIAC ecg6411 ECG6412 diode TRANSISTOR ECG ECG diac DIAC EQUIVALENT circuit Bidirectional Diode Thyristors
Contextual Info: Special Purpose Devices cont'd 4 anode PNP EMITTER <eA ) PNP COLLECTOR NPH BfcSE CATHOOI ÇÂTE PNP BASE NPN <Gc l 6 n p n EMITTER Silicon Controlled Switch (SCS) ECG Typo BVCBO Volts bvebo BVCER Volts h fe Volts Min IGT Max mA -7 0 -7 0 -7 0 0.1 1.0 70

Contextual Info: rz 7 SCS-THOMSON PLQ 08 PLQ 1 Ä 7# FAST RECOVERY RECTIFIER DIODES • VERY FAST FORWARD AND REVERSE RE­ COVERY DIODES S U IT E D FO R ■ SW ITCHING POWER TRANSISTORS DRIVER CIRCUITS SERIES DIODES IN ANTISATURA­ TION CLAM P SPEED UP DIODE IN DISCRETE DARLINGTON.

DIAC ecg6407

Abstract: h06 diode ECG6407 ECG6408 scs thyristor ECG6411 Bidirectional Diode Thyristors DIAC ecg6411 ECG diac ECG6412
Contextual Info: Special Purpose Devices cont'd (A ) Ç 4 ANOOE PNP E M IT TE R ft 4 <Ga > PNP COLLECTOR NPN BASE CATHOOI ANODE GATE NPN COLLECTOR ( GC ) > NPN EM IT TE R Silicon Controlled Sw itch (SCS) BVCBO Volts B V e BO Volts BV CER Volts h fe Min IGT Max mA VGT Max

mos Turn-off Thyristor

Abstract: SiC BJT pnp transistor 1000v BJT Gate Drive circuit fast thyristor 1000V MOS Controlled Thyristor
Contextual Info: rZ J SCS-THOMSON ~7w m R 0 [H ]© i[L i© U É © M D © S t e c h n ic a l n o te AN INTRODUCTION TO HIMOS INTRODUCTION The structure and characteristics of HIMOS High Injection MOS devices, provide circuit designers with an INSULATED GATE BIPOLAR TRANSI­

148-600B

Abstract: 1000B 600B 700B 800B TGF148-600B
Contextual Info: 3ÜE J> m 7^2^ 537 GÜ3mDb 3 • rz7 SCS-THOMSON s 6 Ä 7# M œ m iO T « S ^ P 'Z ô -ll s -t h o «To n T G F 1 4 8 -6 0 0 B - * 1 2 0 0 B FAST SWITCHING THYRISTORS ■ ■ ■ ■ GLASS PASSIVATED CHIP HIGH STABILITY AND RELIABILITY EXCELLENT SURGE CAPABILITY

Contextual Info: SPE C IAL DEVICES SIDAC-BIDIRECTIONAL THYRISTOR DIODES For Pulse Generating and Switching Applications Maximum Ratings NTE Type Number Diagram Number Breakover Voltage (Volts) On Voltage (Volts) Effective Current (Amps) Surge Current (Amps) Holding Current

Contextual Info: SPECIAL DEVICES SIDAC-BIDIRECTIONAL THYRISTOR DIODES For Pulse Generating and Switching Applications Maximum Ratings NTE Type Number Diagram Number Breakover Voltage (Volts) V bo VT Itrms *T SM 'H o ld Pd 6415 395 40 to 60 1.5 1 13 50 850 6416 395 55 to 65