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    SCR RECTIFIER CIRCUIT Search Results

    SCR RECTIFIER CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    SCR RECTIFIER CIRCUIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    scr inverter schematic circuit

    Abstract: SCR Inverter datasheet General electric SCR Power INVERTER schematic circuit scr inverter schematic inverter SCR SCR PNPN four-layer diode scr power control schematic Bipolar Junction Transistor
    Text: Latch-Up LATCH-UP CIRCUIT Latch-up is caused by an SCR Silicon Controlled Rectifier circuit. Fabrication of CMOS integrated circuits with bulk silicon processing creates a parasitic SCR structure. The behavior of this SCR is similar in principle to a true SCR. These structures result from the multiple diffusions


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    PDF 14105C-001 scr inverter schematic circuit SCR Inverter datasheet General electric SCR Power INVERTER schematic circuit scr inverter schematic inverter SCR SCR PNPN four-layer diode scr power control schematic Bipolar Junction Transistor

    SCR Inverter

    Abstract: SCHEMATIC POWER SUPPLY WITH scr SCR PNPN
    Text: GENERAL INFORMATION 1 Latch-up LATCH-UP CIRCUIT Latch-up is caused by an SCR Silicon Controlled Rectifier circuit. Fabrication of CMOS integrated circuits with bulk silicon processing creates a parasitic SCR structure. The behavior of this SCR is similar in principle to a true SCR. These structures result from the multiple diffusions needed for


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    PDF 14105B-1 SCR Inverter SCHEMATIC POWER SUPPLY WITH scr SCR PNPN

    CORNELL DUBILIER SCREW

    Abstract: RS401 SCRN201R SCRN202R SCRN203R SCRN205R SCRN206R SCRN208R SCRN209R SCRN210R
    Text: Type SCR Commutating Capacitors Type SCR – Film-Paper/Extended Foil Applications Type SCRN capacitors are for SCR silicon controlled rectifier commutating applications, requiring high peak and rms current capability. These capacitors are ideal for other high frequency and pulsed applications.


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    PDF RS401 2fCVrmsX10 CORNELL DUBILIER SCREW RS401 SCRN201R SCRN202R SCRN203R SCRN205R SCRN206R SCRN208R SCRN209R SCRN210R

    NTE5556

    Abstract: NTE5554 NTE5550 NTE5558 NTE5552 2N3906 MOTOROLA SCR 800V 25A
    Text: NTE5550 thru NTE5558 Silicon Controlled Rectifier SCR 25 Amp, TO220 Description: The NTE5550 thru NTE5558 SCR’s are designed primarily for half−wave AC control applications, such as motor controls, heating controls and power supply crowbar circuits.


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    PDF NTE5550 NTE5558 NTE5558 NTE5550 12Vdc, NTE5556 NTE5554 NTE5552 2N3906 MOTOROLA SCR 800V 25A

    NTE5415

    Abstract: NTE5414 NTE5416 nte5413 NTE5411 NTE5412
    Text: NTE5411 thru NTE5416 Silicon Controlled Rectifier SCR 4 Amp, Sensitive Gate Description: The NTE5411 through NTE5416 are PNPN silicon controlled rectifier (SCR) devices designed for high volume consumer applications such as temperature, light, and speed control: process and remote control, and warning systems where reliability of operation is important.


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    PDF NTE5411 NTE5416 NTE5416 NTE5411 200mA, NTE5415 NTE5414 nte5413 NTE5412

    NTE5414

    Abstract: NTE5413 NTE5415 6A2S NTE5416 scr 6A NTE5411 NTE5412
    Text: NTE5411 thru NTE5416 Silicon Controlled Rectifier SCR 4 Amp, Sensitive Gate, TO126 Description: The NTE5411 through NTE5416 are PNPN silicon controlled rectifier (SCR) devices designed for high volume consumer applications such as temperature, light, and speed control: process and remote control, and warning systems where reliability of operation is important.


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    PDF NTE5411 NTE5416 NTE5416 NTE5411 200mA, NTE5414 NTE5413 NTE5415 6A2S scr 6A NTE5412

    tt 3043

    Abstract: RS401 SCRN234R SCRN235R SCRN236R SCRN237R SCRN238R SCRN262R SCRN263R SCRN264R
    Text: Type SCR Commutating Capacitors Type SCRN Film-Paper/Extended Foil Commutating Capacitors Type SCRN capacitors are for SCR silicon controlled rectifier commutating applications that require high peak and rms current capability. These capacitors are ideal for other


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    PDF RS401 tt 3043 SCRN234R SCRN235R SCRN236R SCRN237R SCRN238R SCRN262R SCRN263R SCRN264R

    BT149D

    Abstract: No abstract text available
    Text: TO -92 BT149D SCR 13 March 2014 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier in a SOT54 TO-92 plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic ICs and other low power gate trigger circuits.


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    PDF BT149D BT149D

    Untitled

    Abstract: No abstract text available
    Text: • International S Rectifier 4Ö554S2 001b?b3 TbO ■ INR INTERNATIONAL RECTIFIER bSE » SERIES IRK.F112 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate


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    PDF 554S2 4fl55452 10ohm

    Untitled

    Abstract: No abstract text available
    Text: • International g«R]Rectifier MflSSMSS DDlbô3D MTS ■ INR INTERNATIONAL RECTIFIER bSE D SERIES IRK.F200 FAST SCR I DIODE and SCR / SCR MAGN-A-pak Power Modules Features ■ ■ ■ ■ Fast turn-off thyristor Fast recovery diode High surge capability


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    PDF 10ohm 15-Gate

    B25DC

    Abstract: ir e.78996 B25DS E.78996 scr 78996 diode
    Text: International HÖR]Rectifier , • 4A55452 0ülbSb3 IT T « I N R INTERNATIONAL RECTIFIER bSE B25DC/DA/DS/CS/JS SCR I SCR and DIODE / SCR Power Modules in B- package Features I Glass passivated junctions fo r greater reliability I E lectrically isolated base plate 3500V RMS


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    PDF 4A55452 B25DC/DA/DS/CS/JS B25DC 554S2 GGlbS70 20ohm 65ohm B25DC ir e.78996 B25DS E.78996 scr 78996 diode

    Untitled

    Abstract: No abstract text available
    Text: • International [ H Rectifier 4Ö5SMSE QQlbflBE 32T ■ INR international rectifier bSE s e rie s ir k .fis o FAST SCR I DIODE and SCR / SCR MAGN-A-pak Power Modules Features ■ ■ I ■ ■ ■ Fast turn-off thyristor Fast recovery diode High surge capability


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    PDF 10ohm 20ohms 15-Gate

    IRKH162-14D20

    Abstract: IRKH135-16D25
    Text: I 4Ô55452 0Glb7S5 157 M I N R SERIES IRK.135, .136, .141, .142, .161, .162 International S Rectifier SCR I SCR and SCR / DIODE Features NEW INT-A-pak Power Modules INTERNATIONAL RECTIFIER • High voltage ■ Electrically isolated base plate ■ 3000 V RMS isolating voltage


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    PDF 10ohri 36-Thermal IRKH162-14D20 IRKH135-16D25

    Untitled

    Abstract: No abstract text available
    Text: International B Rectifier SERIES IRK.F82 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability E lectrically isolated baseplate 3000 V RMS isolating voltage Industrial standard package


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    PDF 200to

    I27092

    Abstract: F13202
    Text: International S Rectifier SERIES IRK.F132 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability E lectrically isolated baseplate 3000 VRMS isolating voltage Industrial standard package


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    PDF 200to Tj-125 I27092 F13202

    irkt 132 12

    Abstract: No abstract text available
    Text: • International SRectffier 4B55452 741 « I N R INTERNATIONAL RECTIFIER bSE D SERIES IRK.F72 FAST SCR / DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate


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    PDF 4B55452 S545E JDDlb74b irkt 132 12

    scr tic 2060

    Abstract: IRKT THYRISTOR THYRISTOR MODULE irkt 40 diode lt 436 TIC 2060 d291 fire angle of scr circuit irkt 350 IRKT D295
    Text: m MÖSSMS2 0ülb7b3 TbO • INR International [TORJRectifier INTERNATIONAL RECTIFIER bSE » SERIES IRK.F112 FAST SCR / DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate


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    PDF 13-Frequency 001L770 10ohms^ 10ohms. scr tic 2060 IRKT THYRISTOR THYRISTOR MODULE irkt 40 diode lt 436 TIC 2060 d291 fire angle of scr circuit irkt 350 IRKT D295

    tg1g

    Abstract: high power thyristor scr 3f scr thyristor irkv 300
    Text: Bulletin 127102 rev. A 10/97 International IQ R Rectifier SCR / SCR and SCR / DIODE Features • High voltage ■ E lectrically isolated base plate ■ 3000 VRMS isolating voltage ■ Industrial standard package ■ S im plified m echanical designs, rapid assem bly


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    PDF E78996 IRK230/250 tg1g high power thyristor scr 3f scr thyristor irkv 300

    Untitled

    Abstract: No abstract text available
    Text: • International H Rectifier 4655452 DGlt.755 ‘m INTERNATIONAL RECTIFIER *INR b5E » SERIES IRK.F102 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features F a st tu rn -o ff th yristo r F a s t re c o v e ry d io d e H igh s u rg e c a p a b ility


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    VD357

    Abstract: 18psk NF200 Diode LT 410
    Text: International H Rectifier SERIES IRK.F200 FAST SCR I DIODE and SCR / SCR MAGN-A-pak Power Modules Features • ■ I ■ ■ Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3 0 0 0 V rms isolating voltage


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    PDF 18to25 15-Gate VD357 18psk NF200 Diode LT 410

    Untitled

    Abstract: No abstract text available
    Text: • International HU Rectifier 4ÔSSMS5 0 0 1 b 7 4 7 INTERNATIONAL ölß RECTIFIER ■ INR bSE SERIES IRK.F82 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features F ast tu rn -o ff th y ris to r F ast re c o v e ry d io d e H igh s u rg e c a p a b ility


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    PDF DDlb754 10ohm

    6AI diode

    Abstract: No abstract text available
    Text: International IS Rectifier 4Ö5545E Oülb?^ 32fl H I N R SERIES IRK.F152 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features • ■ ■ ■ ■ ■ Fast turn-off thyristor Fast recovery diode High surge capability E lectrically isolated baseplate


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    PDF 5545E 4ASS452 10ohm 10ohms- 6AI diode

    D311 equivalent

    Abstract: DIODE d307 D312 diode JS 684 THYRISTOR OE 90C 2600 diode lt 445 ic "D312"
    Text: International S Rectifier s e r ie s i r k . f i 52 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules F eatu res Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3000 V RMS isolating voltage Industrial standard package


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    PDF 200to to18NT D311 equivalent DIODE d307 D312 diode JS 684 THYRISTOR OE 90C 2600 diode lt 445 ic "D312"

    diode lt 436

    Abstract: IRKT THYRISTOR THYRISTOR MODULE THYRISTOR 30A 300V L1385 irkt 350
    Text: International I S Rectifier s e r ie s i r k .f h 2 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features • ■ ■ ■ ■ Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3000 V RMS isolating voltage


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