SAS diode
Abstract: high frequency diode BES100 "high frequency Diode"
Text: BES100 1.0µm Schottky Diode Process Extremely high frequency diode technology for mixer and switch applications Description a - Epitaxial Schottky diode technology - 1.0µm finger width stepper lithography - 3" wafer - Spiral inductors, MIM capacitors, TaN
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BES100
DSBES1008120
SAS diode
high frequency diode
BES100
"high frequency Diode"
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SAS diode
Abstract: "high frequency Diode" high frequency diode Monolithic System Technology BES100
Text: BES100 1.0µm Schottky Diode Process Extremely high frequency diode technology for mixer and switch applications a Description - Epitaxial Schottky diode technology - 1.0µm finger width stepper lithography - 3" wafer - Spiral inductors, MIM capacitors, TaN
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BES100
DSBES1008120
SAS diode
"high frequency Diode"
high frequency diode
Monolithic System Technology
BES100
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HSMS-2822
Abstract: HSMS-2802 HSMS-2852 hsms HSMS2800 HSMS-280X HSMS-2812 HSMS-2820 HSMS282X HSMS-282X
Text: Non-RF Applications for the Surface Mount Schottky Diode Pairs HSMS-2802 and HSMS-2822 Application Note 1069 Introduction Schottky Diode Fundamentals Schottky diodes, based on silicon or gallium arsenide substrates, are used in many receiver and transmitter
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HSMS-2802
HSMS-2822
5962-9465E
HSMS-2822
HSMS-2852
hsms
HSMS2800
HSMS-280X
HSMS-2812
HSMS-2820
HSMS282X
HSMS-282X
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Untitled
Abstract: No abstract text available
Text: Zowie Technology Corporation Schottky Barrier Diode 30 VOLTS SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODE Lead free product Halogen-free type These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces
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BAT54RGH
OT-23
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35V-250V
Abstract: 5v Schottky barrier low leakage fast epitaxial diode 14F8 100ns-500ns
Text: E L E C T R O N I C Brief of Schottky Barrier Diode Friday, 7 August 2009 Schottky Barrier Diode Schottky Barrier Diode SBD indeed more and more extensively to putting to use on Switching-Mode Power Supply (SMPS) in stead of Fast Recovery Epitaxial Diode (FRED). Not only the highest Reverse Recovery Time (trr) but also the lowest Forward Voltage Drop (VF), both are the
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14F-8,
35V-250V
5v Schottky barrier
low leakage fast epitaxial diode
14F8
100ns-500ns
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top metal
Abstract: silan
Text: 2SB035040AML 2SB035040AML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB035040AML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection.
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2SB035040AML
2SB035040AML
2SB035040AMLJY-155
2SB035040AMLJL-155
500dice/wafer
top metal
silan
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Untitled
Abstract: No abstract text available
Text: 2SB065030MLJY 2SB065030MLJY SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB065030MLJY is a schottky barrier diode chips Lb fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection;
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2SB065030MLJY
2SB065030MLJY
100mA
500mA
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marking code IR10 diode
Abstract: sot323 MARKING B8
Text: Zowie Technology Corporation Schottky Barrier Diode 30 VOLTS SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODE Lead free product Halogen - free type These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount
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10mAdc
BAT54SWGH
OT-323
marking code IR10 diode
sot323 MARKING B8
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Untitled
Abstract: No abstract text available
Text: 2SB035040ML 2SB035040ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB035040ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection.
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2SB035040ML
2SB035040ML
2SB035040MLJY
2SB035040MLJY-155
2SB035040MLJL
2SB035040MLJL-155
500dice/wafer
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Untitled
Abstract: No abstract text available
Text: 2SB065030ML 2SB065030ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB065030ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection.
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2SB065030ML
2SB065030ML
2SB065030MLYY-210
2SB065030MLJY-180
2SB065030MLJY-155
2SB065030MLJL-180
2SB065030MLJL-155
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Untitled
Abstract: No abstract text available
Text: Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching
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SIDC01D60SIC2
Q67050-A4161sawn
Q67050-A4161unsawn
L4804A,
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Untitled
Abstract: No abstract text available
Text: Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching
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SIDC01D60SIC2
SIDC01D60SIC2
Q67050-A4161A1
Q67050-A4161A2
L4804A,
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SPD06S60
Abstract: No abstract text available
Text: Preliminary SIDC02D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching
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SIDC02D60SIC2
SIDC02D60SIC2
Q67050-A4162A1
Q67050-A4162A2
L4814A,
SPD06S60
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diode schottky 600v
Abstract: 600V,4A DIODE Schottky diode Die SDP04S60 SIDC11D60SIC3 DSA0037454
Text: SIDC11D60SIC3 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior
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SIDC11D60SIC3
Q67050-A4161A104
diode schottky 600v
600V,4A DIODE
Schottky diode Die
SDP04S60
SIDC11D60SIC3
DSA0037454
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DIODE 200A 600V schottky
Abstract: SWITCHING DIODE 600V 2A SDP02S60 SDP02s L4834A SIDC00D60SIC2 600 V power Schottky silicon carbide diode
Text: Final SIDC00D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching
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SIDC00D60SIC2
Q67050-A4201A101
Q67050-A4201A102
L4834A,
DIODE 200A 600V schottky
SWITCHING DIODE 600V 2A
SDP02S60
SDP02s
L4834A
SIDC00D60SIC2
600 V power Schottky silicon carbide diode
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50um silicon die attach
Abstract: No abstract text available
Text: 2SB065040ML 2SB065040ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB065040ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection.
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2SB065040ML
2SB065040ML
2SB065040MLJY-180
2SB065040MLJY-155
2SB065040MLJL-180
2SB065040MLJL-155
828dice/wafer
50um silicon die attach
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600 V power Schottky silicon carbide diode
Abstract: Schottky diode Die SDT02S60 SIDC05D60SIC3 DSA0037454
Text: SIDC05D60SIC3 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior
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SIDC05D60SIC3
Q67050-A4201A103
600 V power Schottky silicon carbide diode
Schottky diode Die
SDT02S60
SIDC05D60SIC3
DSA0037454
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SDP02S60
Abstract: SWITCHING DIODE 600V 2A A102 diode sdp02s
Text: Preliminary SIDC00D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching
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SIDC00D60SIC2
SIDC00D60SIC2
Q67050-A4201sawn
Q67050-A4201unsawn
L4834A,
SDP02S60
SWITCHING DIODE 600V 2A
A102 diode
sdp02s
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SPD06S60
Abstract: diode schottky 600v infineon SIDC02D60SIC2 Carbide Schottky Diode
Text: Preliminary SIDC02D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching
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SIDC02D60SIC2
Q67050-A4162sawn
Q67050-A4162unsawn
L4814A,
SPD06S60
diode schottky 600v infineon
SIDC02D60SIC2
Carbide Schottky Diode
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CHM1193
Abstract: k-band gaas schottky diode
Text: CHM1193 K-Band Mixer GaAs Monolithic Microwave IC Description The CHM1193 is a balanced Schottky diode mixer based on a six quarter wave ring structure. It could be use in receiver or transmitter part. This circuit is manufactured with the Schottky diode process : 1 µm Schottky
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CHM1193
CHM1193
CHM1192.
DSCHM11930077
17-Mar-00
k-band gaas schottky diode
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SDT05S60
Abstract: SIDC16D60SIC3 C-19200 DSA0037454
Text: SIDC16D60SIC3 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior
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SIDC16D60SIC3
Q67050-A4271A101
SDT05S60
SIDC16D60SIC3
C-19200
DSA0037454
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Untitled
Abstract: No abstract text available
Text: 2SB053020MTJY 2SB053020MTJY SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB053020MTJY is a schottky barrier diode chips Lb fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection;
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2SB053020MTJY
2SB053020MTJY
150uA
100mA
500mA
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Untitled
Abstract: No abstract text available
Text: 2SB032035ML 2SB032035ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB032035ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection.
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2SB032035ML
2SB032035ML
2SB032035MLJL
2SB032035MLJL-155
000dice/wafer
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50um silicon die attach
Abstract: No abstract text available
Text: 2SB028040ML 2SB028040ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB028040ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection.
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2SB028040ML
2SB028040ML
2SB028040MLJY-155
2SB028040MLJL-155
000dice/wafer
50um silicon die attach
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