GaAs MMIC ESD, Die Attach and Bonding Guidelines
Abstract: all diode List Die Attach and Bonding Guidelines diode PN diode specifications Schottky schottky diode application die bonding DIODE 255 diode all
Text: HSCH-9401 GaAs Schottky Diode Data Sheet Description The HSCH-9401 is a discrete Schottky barrier diode fabricated with the Schottky Barrier Integrated Diode SBID process. Features • fC >800 GHz Applications The HSCH-9401 is a general purpose millimeter wave
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HSCH-9401
HSCH-9401
5988-4416E
5988-6154EN
GaAs MMIC ESD, Die Attach and Bonding Guidelines
all diode List
Die Attach and Bonding Guidelines
diode
PN diode specifications
Schottky
schottky diode application
die bonding
DIODE 255
diode all
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HSMS-2822
Abstract: HSMS-2802 HSMS-2852 hsms HSMS2800 HSMS-280X HSMS-2812 HSMS-2820 HSMS282X HSMS-282X
Text: Non-RF Applications for the Surface Mount Schottky Diode Pairs HSMS-2802 and HSMS-2822 Application Note 1069 Introduction Schottky Diode Fundamentals Schottky diodes, based on silicon or gallium arsenide substrates, are used in many receiver and transmitter
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HSMS-2802
HSMS-2822
5962-9465E
HSMS-2822
HSMS-2852
hsms
HSMS2800
HSMS-280X
HSMS-2812
HSMS-2820
HSMS282X
HSMS-282X
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dual diode mixer
Abstract: Q62702-D1354
Text: Silicon Dual Flip Chip Schottky Diode BAT 14-077D Preliminary Data Sheet • • Dual Schottky medium Barrier Mixer Diode For W-band application up to 80 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code
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14-077D
EHT09236
Q62702-D1354
14-077D
EHT09237
dual diode mixer
Q62702-D1354
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Surface Mount RF Schottky Barrier Diodes
Abstract: No abstract text available
Text: MA4E1340 Series Silicon Medium Barrier Schottky Diode Features V 4.00 Package Outlines RF & Microwave Medium Barrier Silicon 70 V Schottky Diode n Available as Single Diode, Series Pair or Unconnected Pair Configurations. n Low Profile Surface Mount Plastic Packages
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MA4E1340
OT-23
OT-143
OT-323
OD-323
Surface Mount RF Schottky Barrier Diodes
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D1353
Abstract: marking Um diode 14-077S 330 marking diode
Text: Silicon Single Flip Chip Schottky Diode BAT 14-077S Preliminary Data Sheet • • Single Schottky medium Barrier Mixer Diode For W-band application up to 80 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code
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14-077S
Q62702-D1353
EHT09238
EHT09239
D1353
marking Um diode
14-077S
330 marking diode
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marking Um diode
Abstract: W-band diode diode marking um mixer diode w-band dual diode mixer 14-077D diode d.a.t.a. book marking code um
Text: Silicon Dual Flip Chip Schottky Diode BAT 14-077D Preliminary Data Sheet • • Dual Schottky medium Barrier Mixer Diode For W-band application up to 80 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code
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14-077D
Q62702-D1354
EHT09236
EHT09237
marking Um diode
W-band diode
diode marking um
mixer diode
w-band
dual diode mixer
14-077D
diode d.a.t.a. book
marking code um
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5082-2277
Abstract: No abstract text available
Text: 5082-2277 SCHOTTKY BARRIER DUAL DIODE DESCRIPTION: The ASI 5082-2277 is a medium Barrier Schottky Dual Diode Designed for Single Balanced Mixer, Phase Detector and Modulator Applications from 2.4 to 4.8 GHz. PACKAGE STYLE 809 FEATURES INCLUDE: • Medium Barrier
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5082-2830
Abstract: DIODE 809
Text: 5082-2830 SCHOTTKY BARRIER DUAL DIODE DESCRIPTION: The ASI 5082-2830 is a medium Barrier Schottky Dual Diode Designed for Single Balanced Mixer, Phase Detector and Modulator Applications up to 2.0 GHz. PACKAGE STYLE 809 FEATURES INCLUDE: • Medium Barrier
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Untitled
Abstract: No abstract text available
Text: MA4E1338 Series Silicon Medium Barrier Schottky Diode Features V 3.00 Package Outlines RF & Microwave Medium Barrier Silicon 8 V Schottky Diode n Available as Single Diode, Series Pair or Unconnected Pair Configurations. n Low Profile Surface Mount Plastic Package
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MA4E1338
OT-23
OT-143
OT-323
OD-323
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diode d.a.t.a. book
Abstract: marking Um diode diode marking um
Text: Silicon Single Flip Chip Schottky Diode BAT 14-077S Preliminary Data Sheet • • Single Schottky medium Barrier Mixer Diode For W-band application up to 80 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code
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14-077S
EHT09238
Q62702-D1353
14-077S
EHT09239
diode d.a.t.a. book
marking Um diode
diode marking um
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Untitled
Abstract: No abstract text available
Text: BAT 14-077S Silicon Single Flip Chip Schottky Diode Preliminary data Single Schottky medium Barrier Mixer Diode For W-band application up to 80 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking BAT 14-077S -
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14-077S
Mar-30-1998
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MA4E1340
Abstract: medium barrier schottky MA4E1340A-1146T MA4E1340A-287T MA4E1340B-1146T MA4E1340B-287T MA4E1340E-1068T SCHOTTKY DIODE SOT-143 47 SOT143
Text: MA4E1340 Series Silicon Medium Barrier Schottky Diode Features V 4.00 Package Outlines RF & Microwave Medium Barrier Silicon 70 V Schottky Diode n Available as Single Diode, Series Pair or Unconnected Pair Configurations. n Low Profile Surface Mount Plastic Packages
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MA4E1340
OT-23
OT-143
OT-323
OD-323
medium barrier schottky
MA4E1340A-1146T
MA4E1340A-287T
MA4E1340B-1146T
MA4E1340B-287T
MA4E1340E-1068T
SCHOTTKY DIODE SOT-143
47 SOT143
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hsch 3486 zero bias schottky diode
Abstract: HSCH-3486 MA4E928B ma4e928B-54 "zero-bias schottky diode" HSCH3486 20 GHz PIN diode zero bias schottky diode detector
Text: HSCH-3486 ZERO BIAS SCHOTTKY DIODE DESCRIPTION: The HSCH-3486 is a Silicon Zero Bias Schottky Barrier Diode Designed for High Sensitivity Detector and Low Starved Mixer Applications up to 10 GHz. FEATURES INCXLUDE: • Replacement for HSCH3486 and MA4E928B-54
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HSCH-3486
HSCH-3486
HSCH3486
MA4E928B-54
hsch 3486 zero bias schottky diode
MA4E928B
ma4e928B-54
"zero-bias schottky diode"
HSCH3486
20 GHz PIN diode
zero bias schottky diode detector
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Untitled
Abstract: No abstract text available
Text: DMC6224 SCHOTTKY BARRIER DIODE PACKAGE STYLE DESCRIPTION: The ASI DMC6224 is a Silicon Schottky Diode, Low Audio Noise for use in Slow Speed Motion Detector Applications up to 40 GHz FEATURES INCLUDE: • Uniform characteristics. • Bonded Junctions for reliability.
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DMC6224
DMC6224
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5082-2711
Abstract: No abstract text available
Text: 5082-2711 MEDIUM BARRIER SCHOTTKY DIODE PACKAGE STYLE 19 DESCRIPTION: The ASI 5082-2711 is a Silicon Small Signal Schottky Diode for use in broad band and narow band microstrip, coaxial, or wavegide mixer assemblies operating up to 18 GHz. Color Dot indicates
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Untitled
Abstract: No abstract text available
Text: 5082-2271 SCHOTTKY BARRIER DUAL DIODE DESCRIPTION: The 5082-2271 is a Low Barrier Schottky Barrier Dual Diode Designed for Single Balanced Mixer, Phase Detector and Modulator Applications up to 4 GHz. PACKAGE STYLE 867 FEATURES INCLUDE: • Low Barrier • Excellent Matching
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DMF-3070
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ASI30285
Abstract: MA40192
Text: MA40192 SCHOTTKY BARRIER MIXER DIODE DESCRIPTION: The MA40192 is a Silicon Schottky Barrier Diode Designed for Starved LO Mixer Applications up to 10 GHz. PACKAGE STYLE 01 FEATURES: • Replacement for MA/COM MA40192 • Available as matched pairs and matched quads
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MA40192
MA40192
ASI30285
ASI30285
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DMF-3070
Abstract: No abstract text available
Text: 5082-2271 SCHOTTKY BARRIER DUAL DIODE DESCRIPTION: The 5082-2271 is a Low Barrier Schottky Barrier Dual Diode Designed for Single Balanced Mixer, Phase Detector and Modulator Applications up to 4 GHz. PACKAGE STYLE 825 FEATURES INCLUDE: • Low Barrier • Excellent Matching
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DMF-3070
DMF-3070
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DMC6224
Abstract: No abstract text available
Text: DMC6224 SCHOTTKY BARRIER DIODE PACKAGE STYLE DO 23 DESCRIPTION: The ASI DMC6224 is a Silicon Schottky Diode, Low Audio Noise for use in Slow Speed Motion Detector Applications up to 40 GHz FEATURES INCLUDE: • Uniform characteristics. • Bonded Junctions for reliability.
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DMC6224
DMC6224
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5082-2713
Abstract: No abstract text available
Text: 5082-2713 MEDIUM BARRIER SCHOTTKY DIODE PACKAGE STYLE 19 DESCRIPTION: The ASI 5082-2713 is a Silicon Small Signal Schottky Diode for use in broad band and narow band microstrip, coaxial, or wavegide mixer assemblies operating up to 18 GHz. Color Dot indicates
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DUAL DIODE
Abstract: No abstract text available
Text: 5082-2279 SCHOTTKY BARRIER DUAL DIODE DESCRIPTION: The 5082-2279 is a Low Barrier Schottky Barrier Dual Diode Designed for Single Balanced Mixer, Phase Detector and Modulator Applications up to 12 GHz. PACKAGE STYLE 825 FEATURES INCLUDE: • Low Barrier • Excellent Matching
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diode 349A
Abstract: S1 DIODE schottky S11 SCHOTTKY diode MMBD110T1 MMDL101T1 mmbd110
Text: Schottky Barrier Diode Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. MMDL101T1 1.0 pF SCHOTTKY BARRIER DIODE • Very Low Capacitance — Less than 1.0 pF @ Zero Volts
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MMDL101T1
diode 349A
S1 DIODE schottky
S11 SCHOTTKY diode
MMBD110T1
MMDL101T1
mmbd110
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330 marking diode
Abstract: No abstract text available
Text: Infineon icil'inciogiss Silicon Single Flip Chip Schottky Diode BAT 14-077S Preliminary Data Sheet • ♦ Single Schottky medium Barrier Mixer Diode For W-band application up to 80 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions!
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14-077S
EHT09238
Q62702-D1353
EHT09239
330 marking diode
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EL36
Abstract: ND5052-3G
Text: X TO K*BAND GaAs SCHOTTKY BARRIER MIXER DIODE FEATURES OUTLINE DIMENSIONS Untutnmm • X BAND MIXgR DIODE OUTLINE 3 6 • LOW NOISE GaAs SCHOTTKY DIODE NF = 5 dB TYP at I » 10 GHz • LOW TERMINAL CAPACITANCE C i =* 0.3 pF MAX at 1 M Hi • SMALL SIZE • LOW COST
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ND5052-3G
ND5052-3G
EL36
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