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    SCHOTTKY DIODE D16S60C Search Results

    SCHOTTKY DIODE D16S60C Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    SCHOTTKY DIODE D16S60C Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: IDH16S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 38 nC IF 16 A • No temperature influence on the switching behavior


    Original     		IDH16S60C PG-TO220-2 D16S60C PDF

    Schottky diode d16s60c

    Abstract: D16S60C
    Text: IDH16S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 38 nC IF 16 A • No temperature influence on the switching behavior


    Original     		IDH16S60C IDH16S60C PG-TO220-2 D16S60C Schottky diode d16s60c PDF

    D16S60C

    Abstract: Schottky diode d16s60c IDH16S60C JESD22
    Text: IDH16S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 38 nC IF 16 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		IDH16S60C PG-TO220-2 D16S60C D16S60C Schottky diode d16s60c IDH16S60C JESD22 PDF

    D16S60C

    Abstract: Schottky diode d16s60c IDT16S60C JESD22
    Text: IDT16S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 38 nC IF 16 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		IDT16S60C PG-TO220-2-2 D16S60C D16S60C Schottky diode d16s60c IDT16S60C JESD22 PDF

    D16S60C

    Abstract: PG-TO-220-2-2 Schottky diode d16s60c IDT16S60C JESD22
    Text: IDT16S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 38 nC IF 16 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		IDT16S60C PG-TO220-2-2 D16S60C D16S60C PG-TO-220-2-2 Schottky diode d16s60c IDT16S60C JESD22 PDF

    Schottky diode d16s60c

    Abstract: D16S60C
    Text: IDT16S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 38 nC IF 16 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		IDT16S60C PG-TO220-2-2 IDT16S60C PG-TO220-2-2 D16S60C Schottky diode d16s60c PDF

    DI 708 ag

    Abstract: No abstract text available
    Text: IDT16S60C 2nd Generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V • Switching behavior benchmark Qc 38 nC • No reverse recovery/ No forward recovery I F @ T C < 140 °C 16 A I F @ T C < 100 °C 24 A • Revolutionary semiconductor material - Silicon Carbide


    Original     		IDT16S60C PG-TO220-2-2 20mA2) DI 708 ag PDF