SCHOTTKY DIODE C3 Search Results

NTHD4P02F

Abstract: NTHD4P02FT1 NTHD4P02FT1G
Contextual Info: NTHD4P02F Power MOSFET and Schottky Diode −20 V, −3.0 A, Single P−Channel with 3.0 A Schottky Barrier Diode, ChipFETt Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal •

Contextual Info: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, Single P−Channel with 1.0 A Schottky Barrier Diode, ChipFET] http://onsemi.com Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal

Contextual Info: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, P-Channel, with 1.0 A, Schottky Barrier Diode, ChipFET Features http://onsemi.com • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP-6 Package with Similar Thermal

Contextual Info: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, P−Channel, with 1.0 A, Schottky Barrier Diode, ChipFET Features http://onsemi.com • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal

Contextual Info: NTHD4P02F Power MOSFET and Schottky Diode −20 V, −3.0 A, Single P−Channel with 3.0 A Schottky Barrier Diode, ChipFETt Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal •

NTHD4P02FT1G

Contextual Info: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, Single P−Channel with 1.0 A Schottky Barrier Diode, ChipFET] http://onsemi.com Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal

Contextual Info: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, Single P−Channel with 1.0 A Schottky Barrier Diode, ChipFET] http://onsemi.com Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal

NTHD4P02FT1G

Abstract: marking code vishay SILICONIX SMD TSOP C3 NTHD4P02F NTHD4P02FT1
Contextual Info: NTHD4P02F Power MOSFET and Schottky Diode −20 V, −3.0 A, Single P−Channel with 3.0 A Schottky Barrier Diode, ChipFETt Features http://onsemi.com • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal

Contextual Info: NTHD4P02F Power MOSFET and Schottky Diode −20 V, −3.0 A, Single P−Channel with 3.0 A Schottky Barrier Diode, ChipFETt Features http://onsemi.com • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal

R22A

Abstract: transistor MTBF OPTOCUPLER HAND BOOK TRANSISTOR mosfet transistor R1d R24 transistor optocupler transformer mtbf R18A R22E
Contextual Info: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS60-3 Ver: V1.1 Date: 22/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener

transistor R1d

Abstract: transistor R1A diode FR 105 TRANSISTOR 106 d1 R22A MTBF-ZPS40 04112 78540 R18A 217F
Contextual Info: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS40-3 Ver: V1.1 Date: 21/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener

CD731

Abstract: marking 6l "SMD PACKAGE" smd diode So SMD PACKAGE INDIA
Contextual Info: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company SILICON PLANAR SCHOTTKY BARRIER DIODE CD731 SOT23 - 6L Formed SMD Package MARKING CD731 = C3S dot on pin 1 Schottky Barrier Diode (set of three) ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) - specification per diode

IR 30S2

Abstract: smd code marking 5h diode 30S2 30S2 RB551V-30S2 package CODE S2 SMD diode MARKING 5h smd diode 5H Diode smd 5H smd diode sod-323 marking code 03
Contextual Info: CYStech Electronics Corp. Spec. No. : C301S2 Issued Date : 2004.02.18 Revised Date Page No. : 1/4 Small Signal Schottky Barrier diode RB551V-30S2 Description The RB551V-30S2 is a silicon Schottky barrier diode fabricated in planar technology, and encapsulated in a

diode SMD code 10t

Abstract: smd diode schottky code marking 1A N3 SOT-23 3 B S 2 C300N3 CYStech Electronics RB491DN3 Alloy 42 N3 smd Schottky Diode Marking sot-23
Contextual Info: Spec. No. : C300N3 Issued Date : 2004.10.15 Revised Date : Page No. : 1/3 CYStech Electronics Corp. Schottky barrier diode RB491DN3 Description Planar silicon Schottky barrier diode encapsulated in a SOT-23 plastic SMD package. Features •Small surface mounting type SOT-23

smd code marking 5h

Abstract: RB751V-40S2 6040T SMD diode MARKING 5h smd diode 5E SOD-323
Contextual Info: CYStech Electronics Corp. Spec. No. : C345S2 Issued Date : 2004.04.27 Revised Date : Page No. : 1/3 Small Signal Schottky diode RB751V-40S2 Description Planar silicon Schottky barrier diode encapsulated in a SOD-323 plastic SMD package. Features •Small surface mounting type SC-76/SOD323

Contextual Info: C3D04060A–Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec Rectifier IF = 7 A TC < 135°C Qc = 8.5 nC Features • • • • • • • • Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current

Contextual Info: C3D04060A VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 7.5 A Z-Rec Rectifier Qc Features • • • • • • • • 600 V = 8.5 nC Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current

30 g 122

Abstract: C3D03060 CSD04060 TO-220-F2
Contextual Info: C3D03060F–Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec Rectifier Full-Pak IF(AVG) = 3 A Qc = 6.7 nC Features • • • • • • • • Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current

40C2

Abstract: RB751S-40C2 MARKING C2 SOD523 A751
Contextual Info: CYStech Electronics Corp. Spec. No. : C345C2 Issued Date : 2003.12.11 Revised Date : Page No. : 1/3 Small Signal Schottky diode RB751S-40C2 Description Planar silicon Schottky barrier diode encapsulated in a SOD-523 plastic SMD package. Features •Extremely small surface mounting type. SC-79/SOD523

RB521S-30C2

Abstract: MARKING C2 SOD523 30C2
Contextual Info: CYStech Electronics Corp. Spec. No. : C302C2 Issued Date : 2003.12.05 Revised Date : Page No. : 1/3 Small Signal Schottky diode RB521S-30C2 Description Planar silicon Schottky barrier diode encapsulated in a SOD-523 plastic SMD package. Features •Extremely small surface mounting type. SC-79/SOD523

Contextual Info: C3D03060A VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 5.5 A Z-Rec Rectifier Qc Features • • • • • • • • 600 V = 6.7 nC Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current

TO-220-F2

Abstract: C3D03060F C3D03060 CSD04060
Contextual Info: C3D03060F–Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec Rectifier Full-Pak IF(AVG) = 3 A Qc = 6.7 nC Features • • • • • • • • Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current

Contextual Info: C3D03065E VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 5.5 A Z-Rec Rectifier Qc Features • • • • • • • • 650 V = 6.7 nC Package 650-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current

Contextual Info: C3D04065E VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 7.5 A Z-Rec Rectifier Qc Features • • • • • • • • 650 V = 8.5 nC Package 650-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current