SCHOTTKY DIODE 40A Search Results

ultrafast igbt

Abstract: 1200-VOLT IGBT 50 amp 1000 volt calculation of IGBT snubber CPWR-AN03 Cree SiC MOSFET 12 VOLT 10 AMP smps 24 volt 10 amp smps power diode AN-11A
Contextual Info: Hard-Switched Silicon IGBTs? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes by Jim Richmond Replacing the Si Ultrafast soft-recovery diode used as the freewheeling component in hard-switched IGBT applications with a Silicon Carbide SiC Schottky diode reduces the switching losses in the diode by 80% and the switching

IGBT 50 amp 1000 volt

Abstract: Cree SiC MOSFET 12 VOLT 150 AMP smps circuit 24 volt 10 amp smps 10 amp igbt 1000 volt 12 VOLT 2 AMP smps circuit IGBT 50 amp 1200 volt Calculation of major IGBT operating parameters CPWR-AN03 IGBT JUNCTION TEMPERATURE CALCULATION
Contextual Info: APPLICATION NOTE Hard Switched Silicon IGBT’s? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes By Jim Richmond Replacing the Si Ultrafast soft recovery diode used as the freewheeling component in hard switched IGBT applications with a Silicon Carbide SiC Schottky diode

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MBR4045C DIODE 40A SCHOTTKY BARRIER RECTIFIER  DESCRIPTION The UTC MBR4045C is a 40A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MBR40100C Preliminary DIODE 40A SCHOTTKY BARRIER RECTIFIER  DESCRIPTION The UTC MBR40100C is a 40A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MBR4060C Preliminary DIODE 40A SCHOTTKY BARRIER RECTIFIER  DESCRIPTION The UTC MBR4060C is a 40A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power

Contextual Info: APT40DC60HJ ISOTOP SiC Diode Full Bridge Power Module VRRM = 600V IC = 40A @ Tc = 100°C Application •    Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features     + ~ SiC Schottky Diode

Contextual Info: APT40DC120HJ ISOTOP SiC Diode Full Bridge Power Module VRRM = 1200V IC = 40A @ Tc = 100°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • SiC Schottky Diode - Zero reverse recovery

Contextual Info: APT40DC60HJ ISOTOP SiC Diode Full Bridge Power Module VRRM = 600V IC = 40A @ Tc = 100°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • SiC Schottky Diode - Zero reverse recovery

Contextual Info: APT40DC120HJ ISOTOP SiC Diode Full Bridge Power Module VRRM = 1200V IC = 40A @ Tc = 100°C Application •    Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features     + ~ SiC Schottky Diode

APT20S

Contextual Info: 1 2 TO-220 1 - Cathode 2 - Anode Back of Case - Cathode APT20SC60K 600V 20A 1 2 SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies • Schottky Barrier • Switching Losses Nearly

Contextual Info: n.c . n.c . K K 7 22 OT A S A APT20SC120J Discrete 1200V 20A APT20SC120J SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies • Schottky Barrier • Switching Losses Nearly • •

Schottky Diode Marking C3

Contextual Info: Schottky Barrier Diode Twin Diode Wtm S40HC3 OUTLINE 30V 40A m sm Feature • Tj=125°C • • • • • fiVF= 0.40V • e • * t ä § i Tj=125°C Low V f=0.40V Small B jc High lo Rating Main Use • Reverse current protection • Server, Router, RAID

feature of ic UM 66

Abstract: wo02 Trench MOS Schottky Rectifier um 66 ic "A low barrier Schottky metal was used" 40L15CT 65PQ015 80CPT015 wo-02
Contextual Info: Increased Efficiency and Improved Reliability in “ORing” functions using Trench Schottky Technology Davide Chiola, Stephen Oliver, Marco Soldano International Rectifier, El Segundo, USA. As presented at PCIM Europe, 2002 Abstract – Presented in this paper are the characteristics of the first Trench MOS Schottky Diode released to

Contextual Info: Schottky Barrier Diode Twin Diode mwm DF40PC3 o u t lin e 30V 40A Feature • SMD • SMD • ÎS <6V f =0.4V • Ultra-Low Vf=0.4V • High lo Rating'Small-PKG Main Use • Reverse connect protection for DC power source • D C tti^ O R Œ • D C /D C o y <-•$>

Contextual Info: APT40DS04HJ ISOTOP Schottky Diode Full Bridge Power Module VRRM = 45V IF = 40A @ Tc = 80°C Application • • • Switch mode power supplies rectifier Induction heating Welding equipment Features • • • • • • + ~ ~ - Ultra fast recovery times

marking JB SCHOTTKY BARRIER DIODE

Abstract: marking JB diode SG40TC12M diode marking jb
Contextual Info: Schottky Barrier Diode Twin Diode mtmm SG40TC12M o u tlin e Package : FTO-220G Unit : mm o -y H d ^ J 120V 40A 4.5 Feature • Tj=175°C • • • • • 7 Jb = E -Jb K • < S Ir = 6 0 |j A Tj=175°C Full Molded Low Ir=60|jA Resistance for thermal run-away

Contextual Info: Surface Mounting Device y b V T & ' f Schottky Barrier Diode # — F y - o m WÆ Twin Diode OUTLINE DIMENSIONS DF40SC3L Case : STO-220 10.2 = 02 n , 30V 40A Type No. ta tte r 2.4 ±0-a 40SC3L •SM D • T j 150TC Ü r n • Ê V f = 0 .4 5 V # P 0 .1 ±fil

Contextual Info: Schottky Barrier Diode Twin Diode mwm o u t lin e Package : STO-220 DF40SC3L U n ii I m m W e ig h t 30V 40A Date code ^ N Feature N . 0176 Control No. • SMD • SMD • SV f=0.45V • Low Vf=0.45V • P rrsm7’K 5 > ì ' i ® ì ì ì • PnnsM Rating

Contextual Info: APT40DS04HJ ISOTOP Schottky Diode Full Bridge Power Module VRRM = 45V IF = 40A @ Tc = 80°C Application •   Switch mode power supplies rectifier Induction heating Welding equipment Features       + ~ ~ - Ultra fast recovery times

LE17

Contextual Info: SCHOTTKY RECTIFIER DIODE SML4045CP1 • Hermetic TO3 Package • VRRM = 45V, IF =40A • Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VRRM VRWM VR IO IFSM TJ TSTG Repetitive Peak Reverse Voltage

mosfet SMD 6 PIN IC FOR PWM

Abstract: 210nH IR3553MTRPBF ir3550 IR3553
Contextual Info: IR3553 40A Integrated PowIRstage FEATURES DESCRIPTION • Peak efficiency up to 93.2% at 1.2V  Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode  Input voltage VIN operating range up to 15V  Output voltage range from 0.25V up to 3.3V

Contextual Info: SCS240KE2 Datasheet SiC Schottky Barrier Diode Outline VR 1200V IF 20A/40A* QC 66nC Per leg TO-247 *(Per leg / Both legs) (1) (2) Features (3) Inner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Anode (2) Cathode (3) Anode

Contextual Info: SCHOTTKY RECTIFIER DIODE SML4045CP1 • Hermetic TO3 Package • VRRM = 45V, IF =40A • Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VRRM VRWM VR IO IFSM TJ TSTG Repetitive Peak Reverse Voltage

SCS240KE2

Contextual Info: SCS240KE2 Datasheet SiC Schottky Barrier Diode Outline VR 1200V IF 20A/40A* QC 66nC Per leg TO-247 *(Per leg / Both legs) (1) (2) Features (3) Inner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Anode (2) Cathode (3) Anode