Untitled
Abstract: No abstract text available
Text: SMFB13W SCHOTTKY BARRIER DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. Features: ˙ Repetitive Peak Reverse Voltage: VRRM=30V. ˙ Average Output Rectified Current: IO=1.0A. ˙ Peak Forward Voltage: VFM=0.42V max. ˙ For Use in Low Voltage, High Frequency inverters,
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SMFB13W
OD-123
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SMFB13W
Abstract: No abstract text available
Text: SMFB13W SCHOTTKY BARRIER DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. Features: ․ Repetitive Peak Reverse Voltage: VRRM=30V. ․ Average Output Rectified Current: IO=1.0A. ․ Peak Forward Voltage: VFM=0.42V max. ․ For Use in Low Voltage, High Frequency inverters,
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SMFB13W
OD-123
SMFB13W
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Untitled
Abstract: No abstract text available
Text: SMFB13W SCHOTTKY BARRIER DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. Features: ˙ Repetitive Peak Reverse Voltage: VRRM=30V. ˙ Average Output Rectified Current: IO=1.0A. ˙ Peak Forward Voltage: VFM=0.42V max. ˙ For Use in Low Voltage, High Frequency inverters,
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SMFB13W
OD-123
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Untitled
Abstract: No abstract text available
Text: SDB130B Semiconductor Schottky Barrier Diode Applications • Portable equipment battery applications • SMPS applications Features • • • • Low switching loss High reliability Very low reverse current: IR=0.1mA Max. @ VR=30V Low forward voltage: VF=0.49V Max. @ IF=1A
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SDB130B
OD-123
KSD-D6B002-000
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SDB130B
Abstract: No abstract text available
Text: SDB130B Semiconductor Schottky Barrier Diode Applications • Portable equipment battery applications • SMPS applications Features • • • • Low switching loss High reliability Very low reverse current: IR=0.15mA Max. @ VR=30V Low forward voltage: VF=0.49V Max. @ IF=1A
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SDB130B
OD-123
KSD-D6B002-001
SDB130B
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Untitled
Abstract: No abstract text available
Text: ZOWIE Schottky Barrier Diode 30V / 2.0A Objective Specification SSCD203PSH OUTLINE DIMENSIONS FEATURES Case : 1206-S 1.60 ± 0.1 Halogen-free type Lead free product, compliance to RoHS Lead less chip form, no lead damage Lead-free solder joint, no wire bond & lead frame
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SSCD203PSH
1206-S
50mVP-P
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Untitled
Abstract: No abstract text available
Text: ZOWIE Schottky Barrier Diode 30V / 2.0A Objective Specification SSCD203PSH OUTLINE DIMENSIONS FEATURES Case : 1206-S 1.60 ± 0.1 Halogen-free type Lead free product, compliance to RoHS Lead less chip form, no lead damage Lead-free solder joint, no wire bond & lead frame
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SSCD203PSH
1206-S
50mVP-P
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Untitled
Abstract: No abstract text available
Text: Preliminary SDB130B Semiconductor Schottky Barrier Diode Applications • Portable equipment battery applications • SMPS applications Features • • • • Low switching loss High reliability Very low reverse current: IR=0.1mA max. @ VR=30V Low forward voltage: VF=0.49V max. @ IF=1A
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SDB130B
OD-123
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Untitled
Abstract: No abstract text available
Text: ZOWIE Schottky Barrier Diode 30V / 1.0A Objective Specification SSCD103PSH OUTLINE DIMENSIONS FEATURES Case : 1206-S 1.60 ± 0.1 Halogen-free type Lead free product, compliance to RoHS Lead less chip form, no lead damage Lead-free solder joint, no wire bond & lead frame
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SSCD103PSH
1206-S
50mVP-P
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MARK X5
Abstract: No abstract text available
Text: ZOWIE Schottky Barrier Diode 30V / 1.0A Objective Specification SSCD103PSH OUTLINE DIMENSIONS FEATURES Case : 1206-S 1.60 ± 0.1 Halogen-free type Lead free product, compliance to RoHS Lead less chip form, no lead damage Lead-free solder joint, no wire bond & lead frame
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SSCD103PSH
1206-S
50mVP-P
MARK X5
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21119
Abstract: MBR0530PBF MBR0530
Text: Bulletin PD-21119 rev. A 08/06 MBR0530PbF SCHOTTKY DIODE 0.5 Amp IF AV = 0.5Amp VR = 30V Description/ Features Major Ratings and Characteristics Characteristics Value Units I F(AV) (DC) 0.5 A VRRM 30 V IFSM @ tp= 10 ms sine 10 A 0.35 V - 65 to 150 °C VF
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PD-21119
MBR0530PbF
12-Mar-07
21119
MBR0530PBF
MBR0530
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MBR0530PBF
Abstract: MBR0530
Text: Bulletin PD-21119 rev. A 08/06 MBR0530PbF SCHOTTKY DIODE 0.5 Amp IF AV = 0.5Amp VR = 30V Description/ Features Major Ratings and Characteristics Characteristics Value Units I F(AV) (DC) 0.5 A VRRM 30 V IFSM @ tp= 10 ms sine 10 A 0.35 V - 65 to 150 °C VF
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PD-21119
MBR0530PbF
OD123
MBR0530
OD-123
MBR0530PBF
MBR0530
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-21119 04/06 MBR0530PbF SCHOTTKY DIODE 0.5 Amp IF AV = 0.5Amp VR = 30V Description/ Features Major Ratings and Characteristics Characteristics Value Units I F(AV) (DC) 0.5 A VRRM 30 V IFSM @ tp= 10 ms sine 10 A 0.35 V - 65 to 150 °C VF @ 0.5Apk, TJ= 100°C
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PD-21119
MBR0530PbF
OD123
MBR0530
OD-123
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-20202 rev. A 04/06 MBR0530 SCHOTTKY DIODE 0.5 Amp IF AV = 0.5Amp VR = 30V Description/ Features Major Ratings and Characteristics Characteristics Value Units I F(AV) (DC) 0.5 A VRRM 30 V IFSM @ tp= 10 ms sine 10 A 0.35 V - 65 to 150 °C VF @ 0.5Apk, TJ= 100°C
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PD-20202
MBR0530
OD123
OD-123
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-20202 rev. B 10/06 MBR0530 SCHOTTKY DIODE 0.5 Amp IF AV = 0.5Amp VR = 30V Description/ Features Major Ratings and Characteristics Characteristics Value Units I F(AV) (DC) 0.5 A VRRM 30 V IFSM @ tp= 10 ms sine 10 A 0.35 V - 65 to 150 °C VF @ 0.5Apk, TJ= 100°C
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PD-20202
MBR0530
OD123
OD-123
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MBR0530
Abstract: DIODE B-10
Text: Bulletin PD-20202 rev. B 10/06 MBR0530 SCHOTTKY DIODE 0.5 Amp IF AV = 0.5Amp VR = 30V Description/ Features Major Ratings and Characteristics Characteristics Value Units I F(AV) (DC) 0.5 A VRRM 30 V IFSM @ tp= 10 ms sine 10 A 0.35 V - 65 to 150 °C VF @ 0.5Apk, TJ= 100°C
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PD-20202
MBR0530
12-Mar-07
MBR0530
DIODE B-10
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IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK
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100MT160PAPBF
100MT160PA
100MT160PBPBF
IRU1239SC
iru1239
Full-bridge IR2110
Class-D ir2010
PWM IR2112 IRF540
ir21065
full bridge ir2110
h-bridge irfz44n
IRVCM10A
600V 300A igbt dc to dc boost converter
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5a6 zener diode
Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical
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Si4418DY
130mOhm@
Si4420BDY
Si6928DQ
35mOhm@
Si6954ADQ
53mOhm@
SiP2800
SUM47N10-24L
24mOhm@
5a6 zener diode
dual mosfet dip
diode zener 6.2v 1w
10v ZENER DIODE
5A6 smd sot23
DG9415
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Untitled
Abstract: No abstract text available
Text: xDSL ModemRouter Table of Contents DC/DC BUCK CONVERTER, DC/DC BUCK CONVERTER, Energy
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1N4148WS-V
500mA
BAT54A-V
200mA;
OT-23
BAT54W-V
OD123
BAV99-V
OD-323
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kl6 r4
Abstract: S4 DIODE schottky sot 23 B5819WS S4 BAS70WT MARKING S4 diode schottky L47C SOT23 marking sk SOD-323 marking R8 sot 23 marking code s7 KL8 SOT-23
Text: MCC TM Micro Commercial Components SMALL SIGNAL SCHOTTKY DIODES MCC Part Number Marking Code Peak Reverse Voltage PRV V Maximum Reverse Current IR µA Maximum Forward Voltage Drop VF @ IF mV mA Surge Current Capacitance IFSM mAdc CTOT pF 1000 1000 1000 1000
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200mW
OTSOT-23
BAT54
BAT54A
BAT54C
BAT54S
BAS40
BAS40-04
BAS40-05
BAS40-06
kl6 r4
S4 DIODE schottky sot 23
B5819WS S4
BAS70WT
MARKING S4 diode schottky
L47C
SOT23 marking sk
SOD-323 marking R8
sot 23 marking code s7
KL8 SOT-23
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transistor marking 44 sot23
Abstract: marking code diode 04 Diode SMA marking code PD MARKING CODE 028a sot 23 schottky diode 40a marking 1PC on SEMICONDUCTOR MARKING transistor C5D SOT323 MOSFET P hFE-100
Text: Discrete Semiconductor Sample Kit DC-DC Power Supply Applications Central Semiconductor sample kits provide designers with the discrete semiconductor devices ideal for their latest design challenges. The contents of this 3 part sample kit include examples of Central Semiconductor devices most
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CMSH1-20ML
CMSH2-20M
CMSH2-20L
CMSH3-20MA
CMSH3-20L
CMSH5-20
CS20ML
CS220M
200mA
CMDSH05-4
transistor marking 44 sot23
marking code diode 04
Diode SMA marking code PD
MARKING CODE 028a sot 23
schottky diode 40a
marking 1PC
on SEMICONDUCTOR MARKING
transistor C5D
SOT323 MOSFET P
hFE-100
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smd code book
Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ
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OD-80
OD123/323
OT-23,
OT346
OT-323,
OT-416
OT-223,
OT-89
OT-143,
OT-363
smd code book
transistor SMD P1f
marking code W16 SMD Transistor
TRANSISTOR SMD MARKING CODE jg
smd transistor WW1
Transistor SMD a7s
DIODE SMD L4W
smd diode zener code pj 78
smd transistor wv4
Motorola transistor smd marking codes
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MMBD2104
Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a
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BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
LL914
LL4150,
MMBD2104
Transistor NEC 05F
hp2835 diode
ZENER DIODE t2d
what is the equivalent of ZTX 458 transistor
MMBD2103
T2D DIODE 3w
T2D 8N
2n2222 as equivalent for bfr96
mmbf4932
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 0.5A/30V EP05Q03L FEATURES OJEDEC SOD-123 Package OVery Low profile 1.1mm Max o High Surge Capability o Low Thermal Resistance OUL 94, VO o Packaged in 8mm tape Device Marking ^ ^ ^ M onth of Mfg. A = Jan . B = F e b .-L = D e c . Y e a r of Mfg. 7=1997
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A/30V
EP05Q03L
OD-123
EP05Q03L
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