Untitled
Abstract: No abstract text available
Text: Product Highlights: Thinking Beyond the Board LS56 Surface Mount Schottky Rectifier FEATURES/APPLICATIONS Schottky Barrier Diodes Low Forward Voltage Drop Low Leakage Current Moisture Sensitive: level 1, per J-STD-020 Solder Dip 260°C, 10 s Low Profile, Thickness 1.0 mm
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J-STD-020
AEC-Q101
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TB118
Abstract: PBYR245CT
Text: Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop and absence of stored
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OT223
PBYR245CT
TB118
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smd DIODE code marking 20A
Abstract: KB201 diode rectifier
Text: PBYR2545CT/CTB/CTE Schottky barrier rectifier diodes Rev. 05 — 20 January 2003 Product data 1. Product profile 1.1 Description Dual, common cathode schottky rectifier diodes in two conventional leaded plastic packages and one surface mount plastic package.
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PBYR2545CT/CTB/CTE
PBYR2545CT
O-220AB)
PBYR2545CTB
OT404
PBYR2545CTE
OT226
OT404,
OT226
01-Sep-96)
smd DIODE code marking 20A
KB201
diode rectifier
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cte table
Abstract: PBYR2545CT PBYR2545CTB PBYR2545CTE ja ctb
Text: PBYR2545CT/CTB/CTE Schottky barrier rectifier diodes Rev. 05 — 20 January 2003 Product data 1. Product profile 1.1 Description Dual, common cathode schottky rectifier diodes in two conventional leaded plastic packages and one surface mount plastic package.
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PBYR2545CT/CTB/CTE
PBYR2545CT
O-220AB)
PBYR2545CTB
OT404
PBYR2545CTE
OT226
OT404,
cte table
ja ctb
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smd jsp
Abstract: 20CT BYV116 PBYR225CT SC18 smd diode A1 1466 diode smd jsp 33
Text: Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Dual nickel silicide schottky barrier rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop and absence of stored charge. These
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OT223
PBYR225CT
smd jsp
20CT
BYV116
SC18
smd diode A1
1466 diode
smd jsp 33
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PBYR245CT
Abstract: SC18 JSP DIODE
Text: Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop and absence of stored
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OT223
PBYR245CT
SC18
JSP DIODE
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PBYR1545CTB
Abstract: PBYR745
Text: Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Dual low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop, absence of stored
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OT404
PBYR1545CTB
PBYR15-
35CTB
40CTB
45CTB
PBYR745
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PBYR1045
Abstract: PBYR2045CTB C144T
Text: Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Dual low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop, absence of stored
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OT404
PBYR2045CTB
PBYR20-
35CTB
40CTB
45CTB
PBYR1045
C144T
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diode
Abstract: PBYR1645 PBYR2545CTB
Text: Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Dual low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop, absence of stored
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OT404
PBYR2545CTB
PBYR25-
35CTB
40CTB
45CTB
diode
PBYR1645
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PBYR1645
Abstract: PBYR1645B
Text: Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop, absence of stored
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OT404
PBYR1645B
PBYR16Repetitive
PBYR1645
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PBYR1045
Abstract: PBYR1045B
Text: Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop, absence of stored
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OT404
PBYR1045B
PBYR10Repetitive
PBYR1045
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PBYR745 Series
Abstract: PBYR745 PBYR745B
Text: Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop, absence of stored
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OT404
PBYR745B
PBYR745 Series
PBYR745
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PBYR245CT
Abstract: SC18
Text: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR245CT series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • low profile surface mounting
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PBYR245CT
OT223
SC18
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20CT
Abstract: BYV116 PBYR225CT SC18 BYV116 25
Text: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR225CT series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • low profile surface mounting
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PBYR225CT
OT223
20CT
BYV116
SC18
BYV116 25
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zener diode SMD marking code 27 4F
Abstract: smd diode schottky code marking 2F smd zener diode code 5F panasonic MSL level smd zener diode code a2 SMD ZENER DIODE a2 smd zener 27 2f SMD zener marking code 102 A2 SMD zener SMD MARK A1
Text: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MAZDxxx Series Silicon planar type 0.60±0.05 0.20±0.05 Unit: mm For constant voltage, constant current, waveform clipper and surge absorption circuit 0.12+0.05 –0.02 2 • Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
zener diode SMD marking code 27 4F
smd diode schottky code marking 2F
smd zener diode code 5F
panasonic MSL level
smd zener diode code a2
SMD ZENER DIODE a2
smd zener 27 2f
SMD zener marking code 102
A2 SMD
zener SMD MARK A1
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bkjl
Abstract: MBRS2040LT3 MBRS2040LT3G CASE 403A
Text: MBRS2040LT3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high
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MBRS2040LT3
bkjl
MBRS2040LT3
MBRS2040LT3G
CASE 403A
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SS26
Abstract: SS26 SMB
Text: SS26 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high
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0E-01
0E-02
0E-03
0E-04
0E-03
SS26
SS26 SMB
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MBR0520L
Abstract: SCHOTTKY BARRIER RECTIFIER Diodes Board Mount
Text: MBR0520L SCHOTTKY BARRIER RECTIFIERS 0.5AMPERES 20 VOLTS Surface Mount Schottky Power Rectifier PINNING Description This Schottky Power Rectifier employs the Schottky PIN Barrier principle with a barrier metal that produces optimal DESCRIPTION 1 Cathode 2
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MBR0520L
OD-123
300us,
OD-123
MBR0520L
SCHOTTKY BARRIER RECTIFIER Diodes Board Mount
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MBR0520L
Abstract: No abstract text available
Text: MBR0520L SCHOTTKY BARRIER RECTIFIERS 0.5AMPERES 20 VOLTS Surface Mount Schottky Power Rectifier PINNING Description This Schottky Power Rectifier employs the Schottky PIN Barrier principle with a barrier metal that produces optimal DESCRIPTION 1 Cathode 2
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MBR0520L
OD-123
300us,
OD-123
MBR0520L
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Marking code b4 sod-123
Abstract: B4 SOD-123 b4 sod123 MBR0540T1 MBR0540T1G MBR0540T3 MBR0540T3G Code sod-123 on semiconductor marking aaa ON SEMICONDUCTOR MARKING DIAGRAM SOD-123
Text: MBR0540T1, MBR0540T3 Surface Mount Schottky Power Rectifier SOD−123 Power Surface Mount Package The Schottky Power Rectifier employs the Schottky Barrier principle with a barrier metal that produces optimal forward voltage drop−reverse current tradeoff. Ideally suited for low voltage, high
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MBR0540T1,
MBR0540T3
OD-123
OptimalY14
Marking code b4 sod-123
B4 SOD-123
b4 sod123
MBR0540T1
MBR0540T1G
MBR0540T3
MBR0540T3G
Code sod-123 on semiconductor
marking aaa
ON SEMICONDUCTOR MARKING DIAGRAM SOD-123
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3B MARKING
Abstract: CASE 403A
Text: MBRS260T3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high
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MBRS260T3
0E-01
0E-02
0E-03
0E-04
0E-03
3B MARKING
CASE 403A
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification Rectifier diodes schottky barrier_? • GENERAL DESCRIPTION Dual nickel silicide schottky barrier rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop
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OCR Scan
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PDF
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OT223
PBYR225CT
OT223.
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Rectifier diodes schottky barrier_ GENERAL DESCRIPTION Low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop, absence of stored
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OCR Scan
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PDF
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OT404
PBYR1045B
PBYR10Repetitive
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IWBR0520LT1
Abstract: MBR0520LT1 MBR0520LT3
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR0520LT1 M BR0520LT3 Surface Mount Schottky Power Rectifier Motorola Preferred Devices Plastic SOD-123 Package The Schottky Power Rectifier employs the Schottky Barrier principle with a barrier metal that produces optimal forward voltage drop-reverse current
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OD-123
IWBR0520LT1
MBR0520LT1
MBR0520LT3
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