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    SCHEMATIC GSM ESD Search Results

    SCHEMATIC GSM ESD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4CT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7AFS Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-923, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation

    SCHEMATIC GSM ESD Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FMS2016

    Abstract: 765g
    Text: FMS2016 Advanced Product Information 1.1 SP4T GaAs Multi-Band GSM Antenna Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic V1 Available in die form Suitable for multi-band GSM/DCS/PCS/EDGE applications Excellent low control voltage performance


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    FMS2016 FMS2016 22-A114-B. MIL-STD-1686 MILHDBK-263. 765g PDF

    TX2 RC

    Abstract: VTX3 FMS2018 RX3 -G
    Text: FMS2018 Advanced Product Information 1.2 SP7T GaAs Multi-Band GSM – UMTS Antenna Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic Available in die form Suitable for multi-band GSM/DCS/PCS/ EDGE and UMTS applications Excellent low control voltage performance


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    FMS2018 FMS2018 22-A114-B. MIL-STD-1686 MILHDBK-263. TX2 RC VTX3 RX3 -G PDF

    MASWSS0091

    Abstract: MASWSS0091-DIE MASWSS0091SMB tx2 control
    Text: GaAs SP6T 2.5V High Power Switch MASWSS0091 Dual/Tri/Quad-band GSM Applications Features n n n n n n V 3.00 Functional Schematic Supplied as Known Good Die Dual/tri/quad-band GSM/GPRS/EDGE Low Voltage: 2.5V Operation Low Harmonics: -72 dBc at +35 dBm & 1 GHz


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    MASWSS0091 100pF MASWSS0091 MASWSS0091SMB MASWSS0091-DIE MASWSS0091-DIE MASWSS0091SMB tx2 control PDF

    M513

    Abstract: MASWSS0144 MASWSS0144SMB MASWSS0144TR-3000 PQFN
    Text: RoHS Compliant 2.7 V GaAs SP3T Switch: GSM - CDMA - GPS DC - 3.0 GHz GND Functional Schematic 39 pF Dedicated RF Ports GSM, CDMA, GPS Low Cross Modulation: -105 dBm Low Insertion Loss: 0.6 dB at 2 GHz High Isolation: 24 dB at 2 GHz Lead-Free 3 mm 12-lead PQFN Package


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    12-lead MASWSS0144 MASWSS0144 M513 MASWSS0144SMB MASWSS0144TR-3000 PQFN PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs SP6T 2.5V High Power Switch MASWSS0091-DIE Dual/Tri/Quad-band GSM Applications Features • · · · · V 2.00 Functional Schematic Dual/tri/quad-band GSM/GPRS/EDGE Low Voltage: 2.5V Operation Low Harmonics: -72 dBc at +35 dBm & 1 GHz Low Insertion Loss: 0.5 dB at 1 GHz


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    MASWSS0091-DIE 100pF 100pF MASWSS0091-DIE MASWSS0091SMB PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs SP6T 2.5V High Power Switch MASWSS0091-DIE Dual/Tri/Quad-band GSM Applications Features • • • • • V 1.00 Functional Schematic Dual/tri/quad-band GSM/GPRS/EDGE Low Voltage: 2.5V Operation Low Harmonics: -72 dBc at +35 dBm & 1 GHz Low Insertion Loss: 0.5 dB at 1 GHz


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    MASWSS0091-DIE 100pF 100pF MASWSS0091-DIE MASWSS0091SMB PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs SP6T 2.5V High Power Switch Dual/Tri/Quad-band GSM Applications V 4P.00 MASWSS0091 Preliminary Features • · · · · Functional Schematic Dual/tri/quad-band GSM/GPRS/EDGE Low Voltage 2.5V Operation Low Harmonics < -70 dBc at +35 dBm & 1 GHz Low Insertion Loss 0.5 dB at 1 GHz


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    MASWSS0091 100pF 100pF MASWSS0091 MASWSS0091TR PDF

    FMS2014-001

    Abstract: FMS2014-001-EB FMS2014QFN MIL-HDBK-263
    Text: FMS2014QFN Preliminary Data Sheet 2.1 High Power GaAs SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic 3x3x0.9mm Packaged pHEMT Switch Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels


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    FMS2014QFN FMS2014QFN MIL-STD-1686 MIL-HDBK-263. FMS2014-001 FMS2014-001-EB MIL-HDBK-263 PDF

    RT4350

    Abstract: No abstract text available
    Text: FMS2014QFN Preliminary Data Sheet 2.2 High Power GaAs SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic 3x3x0.9mm Packaged pHEMT Switch Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels


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    FMS2014QFN FMS2014QFN MIL-STD-1686 MIL-HDBK-263. RT4350 PDF

    tx2/rx2

    Abstract: RX02 TX01 MIL-HDBK-263
    Text: FMS2036 Preliminary Datasheet v2.2 SP4T GaAs Multi-Band GSM/EDGE Antenna Switch FEATURES: • • • • FUNCTIONAL SCHEMATIC: ANT Available in die form Very low Tx Insertion loss Excellent low control voltage performance Excellent harmonic performance VR1


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    FMS2036 FMS2036 FMS2036-000-WP FMS2036-000-EB tx2/rx2 RX02 TX01 MIL-HDBK-263 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET AS197-306: PHEMT GaAs IC High-Power SP2T and SP3T Switch 0.1–2.5 GHz Features Functional Schematic Multiband, multimode operation ● Positive voltage control ● Four-line logic decoder ● Excellent harmonic performance ● Handles GSM power levels


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    AS197-306: QFN-16 AS197-306 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet FMS2014-001 2.0 High Power GaAs SPDT Switch Features: Functional Schematic 3x3x0.9mm Packaged pHEMT Switch Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels Very high Tx-Rx isolation: >28dB typ. at


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    FMS2014-001 FMS2014-001 FMS2014-001-TR FMS2014-001-TB FMS2014-001-EB PDF

    AS197-306

    Abstract: AS197-306LF QFN-16 SKYWORKS QFN-16
    Text: DATA SHEET AS197-306LF: PHEMT GaAs IC High-Power SP2T and SP3T Switch 0.1–2.5 GHz Features Functional Schematic Multiband, multimode operation ● Positive voltage control ● Four-line logic decoder ● Excellent harmonic performance ● Handles GSM power levels


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    AS197-306LF: QFN-16 J-STD-020 AS197-306 AS197-306LF QFN-16 SKYWORKS QFN-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET AS197-306: PHEMT GaAs IC High-Power SP2T and SP3T Switch 0.1–2.5 GHz Features Functional Schematic Multiband, multimode operation ● Positive voltage control ● Four-line logic decoder ● Excellent harmonic performance ● Handles GSM power levels


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    AS197-306: QFN-16 AS197-306 PDF

    CW-37

    Abstract: bond wire gold MIL-HDBK-263
    Text: FMS2038 Advance Product Information v0.1 SP3T GaAs GSM/EDGE/WCDMA Switch FEATURES • • • • • • FUNCTIONAL SCHEMATIC WEDGE SP3T Switch World-class IMD3 performance Low insertion loss: 0.35 dB at 0.9 GHz High isolation: 25 dB at 1.8 GHz Excellent harmonic performance


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    FMS2038 FMS2038 FMS2038-000-WP FMS2038-000-EB CW-37 bond wire gold MIL-HDBK-263 PDF

    CW-37

    Abstract: MIL-HDBK-263 Filtronic Compound Semiconductors
    Text: FMS2037 Advance Product Information v0.1 SPDT GaAs GSM/EDGE/WCDMA Switch FEATURES • • • • • • FUNCTIONAL SCHEMATIC WEDGE SPDT Switch World-class IMD3 performance Low insertion loss: 0.3 dB at 0.9 GHz High isolation: 26 dB at 1.8 GHz Excellent harmonic performance


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    FMS2037 FMS2037 FMS2037-000-WP FMS2037-000-EB CW-37 MIL-HDBK-263 Filtronic Compound Semiconductors PDF

    7474 truth table

    Abstract: MIL-HDBK-263
    Text: FMS2028 Preliminary Datasheet v2.1 SP6T GaAs Multi-Band GSM Antenna Switch FEATURES: • • • • • • FUNCTIONAL SCHEMATIC: Available in die form Very low Tx Insertion loss High Tx-Rx isolation >45dB typ. at 1.8GHz High Tx-Tx isolation >30dB typ. at 1.8GHz


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    FMS2028 FMS2028 FMS2028-000-FF FMS2028-000-WP FMS2028-000-EB 7474 truth table MIL-HDBK-263 PDF

    AS192-000

    Abstract: No abstract text available
    Text: data sheet AS192-000: PHEMT GaAs IC High-Power SP4T Switch 0.1–2.5 GHz Features Simplified Schematic 4 symmetric RF paths l Positive voltage control l High IP3 l Excellent harmonic performance l Handles GSM power levels l Available in 100% RF tested chip form


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    AS192-000: AS192-000 PDF

    AS192-000

    Abstract: No abstract text available
    Text: DATA SHEET AS192-000: PHEMT GaAs IC High-Power SP4T Switch 0.1–2.5 GHz Features Simplified Schematic 4 symmetric RF paths Positive voltage control ● High IP3 ● Excellent harmonic performance ● Handles GSM power levels ● Available in 100% RF tested chip form


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    AS192-000: AS192-000 PDF

    Untitled

    Abstract: No abstract text available
    Text: FMS2014-001 Data Sheet 4.0 High Power GaAs SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic 3x3x0.9mm Packaged pHEMT Switch Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels Very high Tx-Rx isolation: >28dB typ. at


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    FMS2014-001 FMS2014-001 MIL-STD-1686 MIL-HDBK-263. PDF

    CW-37

    Abstract: TX2 RX2 tx2/rx2 MIL-HDBK-263 FMS2032
    Text: FMS2032 Preliminary Datasheet v2.1 SP6T GaAs Multi-Band GSM/EDGE Antenna Switch FEATURES: • • • • • • FUNCTIONAL SCHEMATIC: Available in die form Very low Tx Insertion loss High Tx-Rx isolation >40dB typ. at 1.8GHz High Tx-Tx isolation >30dB typ. at 1.8GHz


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    FMS2032 FMS2032 FMS2032-000-FF FMS2032-000-WP FMS2032-000-EB CW-37 TX2 RX2 tx2/rx2 MIL-HDBK-263 PDF

    CW-37

    Abstract: ag 1686 MIL-HDBK-263
    Text: FMS2033 Flip Chip SP6T Multi-Band GSM/EDGE Antenna Switch FEATURES: • • • • • • • Advance Product Info v1.0 FUNCTIONAL SCHEMATIC: Available as RF Known Good Die Flip Chip enabled Very low Tx Insertion loss High Tx-Rx isolation >42dB typ. at 1.8GHz


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    FMS2033 FMS2033 22-A114. MIL-STD1686 MIL-HDBK-263. FMS2033-000-WP CW-37 ag 1686 MIL-HDBK-263 PDF

    FMS2014-001

    Abstract: FMS2014-001-TB FMS2014-001-TR FMS2014QFN
    Text: FMS2014-001 Data Sheet 3.0 High Power GaAs SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic 3x3x0.9mm Packaged pHEMT Switch Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels Very high Tx-Rx isolation: >28dB typ. at


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    FMS2014-001 FMS2014-001 FMS2014-001-TR FMS2014-001-TB FMS2014-001-EB FMS2014-001-TB FMS2014-001-TR FMS2014QFN PDF

    7474 truth table

    Abstract: CW-37 7474 applications MIL-HDBK-263
    Text: FMS2028 Datasheet v2.2 SP6T GaAs Multi-Band GSM Antenna Switch FEATURES: • • • • • • FUNCTIONAL SCHEMATIC: Available in die form Very low Tx Insertion loss High Tx-Rx isolation >45dB typ. at 1.8GHz High Tx-Tx isolation >30dB typ. at 1.8GHz Excellent low control voltage performance


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    FMS2028 FMS2028 FMS2028-000-FF FMS2028-000-WP FMS2028-000-EB 7474 truth table CW-37 7474 applications MIL-HDBK-263 PDF