PLC GE FANUC
Abstract: FANUC ELECTRICAL MANUAL FANUC cable optical cable plc ge fanuc FANUC O SERIES interbus D-Sub Connector OPERATING TEMPERATURE A1078 fanuc FANUC POWER SUPPLY
Text: IBS GE 90-70 SC/I-T Data Sheet INTERBUS Controller Board for GE Fanuc Series 90-70 PLCs Data Sheet Revision A 12/1997 Product Description INTERBUS Generation 4 controller board for GE Fanuc Series 90-70 PLCs Features - INTERBUS protocol DIN E 19258 - Remote bus connection via
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Untitled
Abstract: No abstract text available
Text: WEITRON BAS16W / BAV70W BAW56W / BAV99W Surface Mount Switching Diode SWITCHING DIODE 200-215m AMPERRES 70-75 VOLTS Features: *Low Current Leakage *Low Forward Voltage *Reverse Recover Time Trr 6ns *Small Outline Surface Mount SOT-323 Package 3 1 2 SOT-323 SC-70
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BAS16W
BAV70W
BAW56W
BAV99W
200-215m
OT-323
SC-70)
OT-323
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BAS16W
Abstract: BAV99W BAW56W BAV99W A7 BAV70W bav99W diode CD DIODE
Text: WEITRON BAS16W / BAV70W BAW56W / BAV99W Surface Mount Switching Diode SWITCHING DIODE 200-215m AMPERRES 70-75 VOLTS Features: *Low Current Leakage *Low Forward Voltage *Reverse Recover Time Trr 6ns *Small Outline Surface Mount SOT-323 Package 3 1 2 SOT-323 SC-70
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BAS16W
BAV70W
BAW56W
BAV99W
200-215m
OT-323
SC-70)
OT-323
BAV99W
BAV99W A7
BAV70W
bav99W diode
CD DIODE
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Untitled
Abstract: No abstract text available
Text: BAV99W THRU BAS16W SMALL SIGNAL SCHOTTKY BARRIER DIODES SOT-323 SC-70 0.016(0.40) 0.012(0.30) Low current leakage Low forward voltage 3 0.053(1.35) 0.045(1.15) Small outline surface mount SOT-23 PACKAGE 0.094(2.40) TOP VIEW 1 0.079(2.00) 2 0.026(0.65) 0.016(0.40)
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BAV99W
BAS16W
OT-323
SC-70)
OT-23
BAV70W
BAW56W
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NEC U574
Abstract: u574 M7-CSP32 C540 DIODE m7csp32 IC JRC 4029 M9-CSP64 d42b diode 2n3904 sot 23 SDRAM SODIMM CA0062
Text: 4 5 4 PCI RESET NC7S14 SC-70 5P 2 T12 RESUME RESET C632 U50 1 PRSTMSK0 2 4 1 19 1 3VDDS 5 4 3 3 PCIRST00 19,31,32,33,34,35,36,46 7 3 2 4 3 C 0.1uF 16V 80-20% 0402 Y5V U48A 1 NOT RESET AT SUSPEND 74LVX32MTCX FAIRCHILD
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NC7S14
SC-70
PCIRST00
74LVX32MTCX
AC97RST0
OT-23
AC97RSTNS0
1/16W
DTA144EU
NEC U574
u574
M7-CSP32
C540 DIODE
m7csp32
IC JRC 4029
M9-CSP64
d42b diode
2n3904 sot 23
SDRAM SODIMM CA0062
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Untitled
Abstract: No abstract text available
Text: UPD482445G5-60 1/2 IL08D C-MOS 4M-BIT DUALPORT GRAPHICS BUFFER —TOP VIEW— 30 1 VDD DT/OE IN 2 3 GND 70 SC 69 SE IN 31 IN 32 33 GND 68 34 SIO0 I/O 4 67 SIO15 W0/IO0 I/O 5 66 W15/IO15 SIO1 W1/IO1 I/O I/O 6 7 8 VDD I/O 65 SIO14 39 64 W14/IO14 40 I/O W15/IO15
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UPD482445G5-60
IL08D
SIO15
W15/IO15
SIO14
W14/IO14
W13/IO13
W12/IO12
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Untitled
Abstract: No abstract text available
Text: TC528257FT-70 1/2 IL11D C-MOS 2 M (262,144 x 8)-BIT MULTIPORT DRAM —TOP VIEW— 17 1 VDD GND 44 SC IN 2 43 SIO8 I/O SIO1 I/O 3 42 SIO7 I/O SIO2 I/O 4 41 SIO6 I/O 18 19 20 21 24 25 SIO3 I/O 5 40 SIO5 I/O SIO4 I/O 6 39 SE IN DT/OE IN 7 38 W8/IO8 I/O 26
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TC528257FT-70
IL11D
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ECHO canceller IC
Abstract: No abstract text available
Text: Ap plica tion Note, DS 1 .0, June 2000 ACE A c o us t ic E ch o C an c e l le r P S B 2 1 70 V 2 .1 M i gr a t io n f r om AC E V 1 . 1 t o V 2 .1 Tr a n sc ei ve r s N e v e r s t o p t h i n k i n g . PSB 2170 Revision History: 2000-06-29 DS 1.0 Previous Version:
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Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Switching Diode ƽ Pb-Free Package is available. LBAS16LT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LBAS16LT1G A6 SOT-23 3000/Tape&Reel LBAS16LT3G A6 SOT-23 10000/Tape&Reel 3 1 2 MAXIMUM RATINGS Rating
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LBAS16LT1G
OT-23
3000/Tape
LBAS16LT3G
10000/Tape
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MCM67A618B
Abstract: SRAM
Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MCM67A618B/D SEMICONDUCTOR TECHNICAL DATA MCM67A618B Advance Information A6 A7 E UW LW VCC V SS DL AL G A8 A9 A10 The MCM67A618B is a 1,179,648 bit latched address static random access memory organized as 65,536 words of 18 bits. The device integrates a 64K x 18
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MCM67A618B/D
MCM67A618B
MCM67A618B
SRAM
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MCM67B618B
Abstract: FN 52 pin MOTOROLA 778-02
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MCM67B618B/D SEMICONDUCTOR TECHNICAL DATA Advance Information MCM67B618B 64K x 18 Bit BurstRAM Synchronous Fast Static RAM A6 A7 E UW LW ADSC ADSP ADV K G A8 A9 A10 The MCM67B618B is a 1,179,648–bit synchronous fast static random access
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MCM67B618B/D
MCM67B618B
MCM67B618B
i486TM
FN 52 pin MOTOROLA 778-02
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EM 18
Abstract: EM-189 MC68040 MCM67M618B
Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Advance Information Order this document by MCM67M618B/D MCM67M618B 64K x 18 Bit BurstRAM Synchronous Fast Static RAM A6 A7 E UW LW TSC TSP BAA K G A8 A9 A10 The MCM67M618B is a 1,179,648–bit synchronous static random access
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MCM67M618B/D
MCM67M618B
MCM67M618B
MC68040
EM 18
EM-189
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5962-8949704MXA
Abstract: SMJ44C251B-10SVM VRAM MT42C4256C-10 MT42C4256 vram dual port SMJ44C251B 5962-8949704 asi SMJ44C251B 5962-8949704MZA
Text: VRAM SMJ44C251B MT42C4256 Austin Semiconductor, Inc. 256K X 4 VRAM PIN ASSIGNMENT Top View 256K x 4 DRAM with 512K x 4 SAM 28-Pin DIP (C) (400 MIL) AVAILABLE AS MILITARY SPECIFICATIONS SC SDQ1 SDQ2 TR\/OE\ DQ1 DQ2 ME\/WE\ NC RAS\ A8 A6 A5 A4 Vcc • SMD 5962-89497
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SMJ44C251B
MT42C4256
28-Pin
MIL-STD-883
MT42C4256DCJ-10/883C
5962-8949704MTA
MT42C4256DCJ-12/883C
5962-8949703MTA
MT42C4256F-10/883C
5962-8949704MUA
5962-8949704MXA
SMJ44C251B-10SVM
VRAM
MT42C4256C-10
MT42C4256
vram dual port
SMJ44C251B
5962-8949704
asi SMJ44C251B
5962-8949704MZA
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VRAM
Abstract: MT42C4256 SMJ44C251B SMJ44C251B-10JDM MT42C4256C-10 SMJ44C251B-10 SMJ44C251B-10SVM
Text: VRAM SMJ44C251B MT42C4256 Austin Semiconductor, Inc. 256K X 4 VRAM PIN ASSIGNMENT Top View 256K x 4 DRAM with 512K x 4 SAM 28-Pin DIP (C) (400 MIL) AVAILABLE AS MILITARY SPECIFICATIONS SC SDQ1 SDQ2 TR\/OE\ DQ1 DQ2 ME\/WE\ NC RAS\ A8 A6 A5 A4 Vcc • SMD 5962-89497
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SMJ44C251B
MT42C4256
28-Pin
MIL-STD-883
MT42C4256DCJ-10/883C
5962-8949704MTA
MT42C4256DCJ-12/883C
5962-8949703MTA
MT42C4256F-10/883C
5962-8949704MUA
VRAM
MT42C4256
SMJ44C251B
SMJ44C251B-10JDM
MT42C4256C-10
SMJ44C251B-10
SMJ44C251B-10SVM
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514100A
Abstract: Siemens CCa A4 siemens cca Q67100-Q586 T-V6-Z3-15 siemens FLH G2040M
Text: • aaasbos SIEME qqhqmqo SIEMENS r- e i s i e g AK TI EN GE SE LL SC HA F • 4Mx 1-Bit Dynamic RAM M7E T -¥ 6 -Z 3 -l5 HYB 514100A-60/-70/-80 Advance Information • 4194 304 words by 1-bit organization • 0 to 70 ‘C operating temperature • Fast access and cycle time
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0Q2D400
T-V6-Z3-15
14100A-60/-70/-80
53SbDS
QS0417
P-SOJ-26/20
GPJ05112
P-ZIP-20
JEDEC-MO-072-AA)
514100A
Siemens CCa A4
siemens cca
Q67100-Q586
siemens FLH
G2040M
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Untitled
Abstract: No abstract text available
Text: DASH NO. M CODE MADE FROM SD REVISIONS o ER -F ^ 39004 JPK 01/28/04 I to 7704-9S sc a le 2:1 APPROX SURFACE AREA NOTES: 1. MATERIALS: CAPS: VINYL INSULATORS: TEFLON, ASTM-D-4894 GASKETS: SILICONE RUBBER. Z Z-R -765 CONDUCTIVE GASKET: CONSIL C 87-10004, 60-70 DUROMETER
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7704-9S
ASTM-D-4894
ASTM-B-103
ASTM-B-196
ASTM-B16
E-20167
MIL-G-45204
DC-500
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marking CJD
Abstract: A6 marking MRF947t1 marking 6B
Text: SC-70/SQT-323 Devices_ Maximum die size 20 mil x 20 mil CASE 419-02 RF Transistors Maximum Ratings Gain-Bandwldth NF @ <§ Device t f Gain @ Marking h Typ GHz lc mA Typ dB MHz Typ dB MHz A H B 8 8 8 15 15 30 2.1 2.1 2.0 1500 1500 1500 10.5 10.5
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SC-70/SQT-323
MRF947T1
MRF947BT1
MRF957T1
MUN5211T1
MUNS212T1
MUN5213T1
MUN5214T1
MUN5111T1
MUN5112T1
marking CJD
A6 marking
marking 6B
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K68A
Abstract: a1f4m A1A4M R1Ik N1A4M 2SK104 2SA1138 a1l4m n1f4m 2SD1557
Text: QUICK REFERENCE GUIDE MINI MOLD SC-59 Q U IC K R E FE R EN C E TA B L E Switching Diodes □ m Leadless Type Q U IC K REFER EN C E TA B LE (Switching Diodes) □ \ ^ V R (V ) GENERAL P UHPO SE 30 50 70 LS53 LS 54 LS 55 LS 953 LS 954 L S 955 100 S IN G L E
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SC-59
DO-35
SC-63)
T0-220AB
K68A
a1f4m
A1A4M
R1Ik
N1A4M
2SK104
2SA1138
a1l4m
n1f4m
2SD1557
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Untitled
Abstract: No abstract text available
Text: 2 56K x4 Monolithic VideoRAM MVM4256K/T/V-10/12/15 m o l a l e Issue 3.1 : November 1991 S e m ic o n d u c to r 262,144 x 4 CMOS High Speed Video Dynamic RAM Features NC 28 27 26 25 24 23 22 21 RÄ5 20 A8 A6 A5 A4 Vcc 19 18 17 16 15 SC SI/OO RAM Access Time of 100,120,150 ns
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MVM4256K/T/V-10/12/15
MIL-STD-883B
SI/03
SI/02
MIL-883
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Untitled
Abstract: No abstract text available
Text: noi aie 256K x 4 Monolithic VideoRAM M V M 4 2 5 6 K /T /V -1 0/12/15 Issue 3.1 : Novem ber 1991 osaic smiconduclor r 262,144 x 4 CMOS High Speed Video Dynamic RAM Features SC SI/OO SI/01 DT/OE 1/00 1/01 WE NC RAS A8 A6 A5 A4 Vcc RAM Access Time of 100,120,150 ns
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MIL-STD-883B
SI/01
SI/03
MVM4256VM
MIL-883
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a810c
Abstract: sc 1091 "Video Dynamic RAM" military VM42
Text: 256K x 4 Monolithic VideoRAM n o i a i e MVM4256K/T/V-10/12/15 Issue 3.1 : November 1991 itniconduclor 262,144 x 4 CMOS High Speed Video Dynamic RAM Pin Definition Package Types: 'K '.T.'V Features 22 NC RAS A8 A6 A5 A4 21 20 19 18 17 16 Vcc 15 A7 DT/OE 1/00
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MVM4256K/T/V-10/12/15
MIL-STD-883B
SI/01
SI/03
SI/02
MIL-883
a810c
sc 1091
"Video Dynamic RAM" military
VM42
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S2L00
Abstract: No abstract text available
Text: 256K x 4 molale V id e o R A M M V M 4 2 5 9 -1 0 /1 2 Issue 2.0 : February 1992 P R E L IM IN A R Y S e m ic o n d u c to r Inc. Pin Definition 262,144 X 4 CMOS Fully Featured Video RAM SC SI01 SI02 DT/OE W1/I01 W 2/I02 WB/WE NC RAS A8 A6 A5 A4 Vcc Features
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MIL-STD883D
S2L00
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Untitled
Abstract: No abstract text available
Text: AS42C4256 883C 256K X 4 VRAM AUSTIN SEMICONDUCTOR, INC. 256K X 4 DRAM WITH 5 1 2 x 4 SAM VRAM AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • MIL-STD-883 • • SC SDQ1 SDQ2 TR\-OE\ DQ1 DQ2 ME\-WE\ NC RAS\ A8 A6 A5 A4 , i [ i i i i i i [
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AS42C4256
MIL-STD-883
100ns,
30ns/27ns
120ns,
35ns/35ns
30ns/25ns
DS000016
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MT42C4064
Abstract: 0041478 mt4067 MT42
Text: MT42C4064 883C AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SMD 5962-89952, Class M • JAN 5962-89952, Class B • MIL-STD-883, Class B 24L/400 DIP tD- 11 ) sc i 1 * SDQ1 2 SDQ2Í 3 T r /ü ë î 4 DQ1 5 DQ2C ME/WE 7 RAS E8 A6 C9 A5C 10
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MT42C4064
MIL-STD-883,
256-cycle
250mW
MIL-STD-883
0041478
mt4067
MT42
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