Untitled
Abstract: No abstract text available
Text: PMG45UN 20 V, single N-channel Trench MOSFET 13 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT363 (SC-88) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMG45UN
OT363
SC-88)
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qualified
Abstract: MGD624
Text: PMBT3906YS 40 V, 200 mA PNP/PNP general-purpose double transistor Rev. 02 — 13 May 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose double transistor in a SOT363 SC-88 very small Surface-Mounted Device (SMD) plastic package.
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PMBT3906YS
OT363
SC-88)
PMBT3906YS
OT363
SC-88
PMBT3904YS
PMBT3946YPN
AEC-Q101
qualified
MGD624
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Untitled
Abstract: No abstract text available
Text: PMN40UPE 20 V, single P-channel Trench MOSFET 13 August 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMN40UPE
OT457
SC-74)
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PMBT3906YS
Abstract: TRANSISTOR SMD CODE PACKAGE SOT363 NXP SMD TRANSISTOR MARKING CODE MARKING CODE SMD IC
Text: PMBT3906YS 40 V, 200 mA PNP/PNP general-purpose double transistor Rev. 02 — 13 May 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose double transistor in a SOT363 SC-88 very small Surface-Mounted Device (SMD) plastic package.
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PMBT3906YS
OT363
SC-88)
PMBT3906YS
SC-88
PMBT3904YS
PMBT3946YPN
AEC-Q101
TRANSISTOR SMD CODE PACKAGE SOT363
NXP SMD TRANSISTOR MARKING CODE
MARKING CODE SMD IC
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PDTB123Y
Abstract: all ic data PDTB123E PDTB113E
Text: SO T3 23 PDTD1xxxU series 500 mA, 50 V NPN resistor-equipped transistors Rev. 1 — 13 May 2014 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.
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OT323
SC-70)
PDTD113EU
SC-70
PDTB113EU
PDTD113ZU
PDTB123EU
PDTD123YU
PDTB123YU
PDTB123Y
all ic data
PDTB123E
PDTB113E
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Untitled
Abstract: No abstract text available
Text: PBLS6023D 60 V, 1.5 A PNP BISS loadswitch Rev. 01 — 13 August 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)
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PBLS6023D
OT457
SC-74)
AEC-Q101
PBLS6023D
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TRANSISTOR SMD MARKING CODE KF
Abstract: kf smd transistor
Text: PBLS6022D 60 V, 1.5 A PNP BISS loadswitch Rev. 01 — 13 August 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)
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PBLS6022D
OT457
SC-74)
AEC-Q101
PBLS6022D
TRANSISTOR SMD MARKING CODE KF
kf smd transistor
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SMD TRANSISTOR MARKING A7
Abstract: PBSS8110D PBSS9110D MOSFET TRANSISTOR SMD MARKING CODE js TRANSISTOR SMD MARKING CODES a7
Text: PBSS9110D 100 V, 1 A PNP low VCEsat BISS transistor Rev. 02 — 13 July 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.
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PBSS9110D
OT457
SC-74)
PBSS8110D.
PBSS9110D
SMD TRANSISTOR MARKING A7
PBSS8110D
MOSFET TRANSISTOR SMD MARKING CODE js
TRANSISTOR SMD MARKING CODES a7
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marking code AC
Abstract: marking code A.C NXP SMD DIODE MARKING CODE T4
Text: SO T4 16 PMR290UNE 20 V, 700 mA N-channel Trench MOSFET Rev. 1 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMR290UNE
OT416
SC-75)
AEC-Q101
marking code AC
marking code A.C
NXP SMD DIODE MARKING CODE T4
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transistor smd code marking nc
Abstract: No abstract text available
Text: SO T4 57 PMN27UP 20 V, 5.7 A P-channel Trench MOSFET Rev. 1 — 13 July 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMN27UP
OT457
SC-74)
transistor smd code marking nc
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Untitled
Abstract: No abstract text available
Text: SO T4 16 PMR670UPE 20 V, 480 mA P-channel Trench MOSFET Rev. 1 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMR670UPE
OT416
SC-75)
AEC-Q101
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2400RPM
Abstract: motor speed control with forward reverse using SC TRANSISTOR BO 345 AN6656S 2SB1073 AN6656 automatic motor for reverse and forward
Text: ICs for Motor AN6656, AN6656S Micromotor Forward/Reverse Electronic Governors • Overview AN6656 M Di ain sc te on na tin nc ue e/ d co ce /D is 14 Ref. Voltage Source M ai nt en an Starting Circuit 13 Buffer 7 Buffer Buffer 8 Buffer 1 5 10 8 9 2.54 11 7
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AN6656,
AN6656S
AN6656
51min.
16-Lead
DIP016-P-0300E)
2400RPM
motor speed control with forward reverse using SC
TRANSISTOR BO 345
AN6656S
2SB1073
AN6656
automatic motor for reverse and forward
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Untitled
Abstract: No abstract text available
Text: CCD Area Image Sensor MW39580AE Diagonal 11 mm type-2/3 IT CCD Area Image Sensor • Pin Assignments ■ Overview 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 M Di ain sc te on na tin nc ue e/ d The MW39580AE is a type-2/3 2.2M-pixel CCD solid state image sensor.
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MW39580AE
MW39580AE
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TRANSISTOR marking 489 code
Abstract: No abstract text available
Text: DTA143EE DTA143EUA DTA143EKA Digital transistor, PNP, with 2 resistors Features Dimensions Units : mm available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages package marking: DTA143EE, DTA143EUA, and DTA143EKA; 13 a built-in bias resistor allows inverter
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DTA143EE
DTA143EUA
DTA143EKA
SC-70)
SC-59)
DTA143EE,
DTA143EUA,
DTA143EKA;
DTA143EE
DTA143EUA
TRANSISTOR marking 489 code
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JE4353
Abstract: 2U 34 mje4343 motorola MJE4340
Text: MOTOROLA SC 12E XS TRS/R F 0 § MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 0005355 7 | NPN PNP MJE4340 MJE4341 MJE4342 MJE4343 MJË4350 MJE4351 MJE4352 MJE4353 T - 33-13 T ^ 31 -1 3 HIGH-VOLTAGE - HIGH POWER TRANSISTORS 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON
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MJE4340
MJE4341
MJE4342
MJE4343
MJE4351
MJE4352
MJE4353
JE4353
2U 34
mje4343 motorola
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2N6678 motorola
Abstract: Motorola 3-252 ca3725 Motorola Transistor 3-252 JH transistor 6676 transistor Motorola 3-252 to-3
Text: "Tb MOTOROLA SC iXSTRS/R F> 6367254 M OT O R O L A SC CXSTRS/R F DE Jt.3t.72SM OOÛOSlt. 2 96D 60 516 D T-33-13 2IM6648 M O TO RO LA See Page S E M IC O N D U C T O R TECH N ICAL DATA 3-209 N P N Silico n Pow er T ransistors 2N6676 2N6677 2N6678 The 2N6676, 2N6677, 2N6678, MJH6676, MJH6677, and MJH6678 transistors are
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T-33-13
2IM6648
2N6676
2N6677
2N6678
MJH6676
MJH6677
MJH6678
2N6676,
2N6677,
2N6678 motorola
Motorola 3-252
ca3725
Motorola Transistor 3-252
JH transistor
6676 transistor
Motorola 3-252 to-3
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LM 3177
Abstract: bc5488 BC54BB TF1102 TDA 8390 A PM5518 2066 TVPO BC54b ic tda TDA tda 7805
Text: 11 UV 04 R C 11 SC 01 SEC A M & C T I Diagram Transm itter Diagram 1 Lime YELLOW L9* CTUM l>* - - MUt£ r- mjmrvf. 5T »Y KO I IFWVtE KWCOL BW 1 TUM . ,• 5LEEP t 13 _8 uT m itx ia 3 2 T CKPiwa HOLD 13 . L lf* «tJ T TU MGT* WCm 1. TlhC MCROflY II ! PtCiZ-
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L0305-"
LM 3177
bc5488
BC54BB
TF1102
TDA 8390 A
PM5518
2066 TVPO
BC54b
ic tda
TDA tda 7805
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mc145412
Abstract: MC145413 145412 MC14551 Dtmfout MC145512
Text: febE D • ti3b7ES3 ODflTSDD 1 2 3 ■ M0T5 MOTOROLA ■ SEMICONDUCTOR wm motorola sc > telecom TECHNICAL DATA MC145412 M CI 45413 MC145512 Advance Information Pulse/Tone Repertory Dialer Low Power Silicon-Gate CMOS The MC145412/13 and MC145512 are silicon gate, monolithic CMOS
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MC145412/13
MC145512
18-pin
MC145413
500-Hz
18-Digit
MC145412
MC145413-MC145512
145412
MC14551
Dtmfout
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TOSHIBA 9097250
Abstract: No abstract text available
Text: ]>e 1 =10^7250 Q01ti77H 1 TOSHIBA {DI SC RE TE /OPT O} 99D 16772 9097250 TOSHIBA <DIS C RE TE/OPTO> TOSHIBA SEMICONDUCTOR ¿/ a sh ih u DT-31-13 FIELD EFFECT TRANSISTOR Y T F 1 5 0 SILICON TECHNICAL DATA N CHANNEL MOS TYPE TT-MOSI HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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Q01ti77H
DT-31-13
045i2
100nA
250yA
150pC,
TOSHIBA 9097250
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MJE13007E
Abstract: JE13006 MJE13Q07 JE13007
Text: MOTOROLA SC XSTRS/R 1EE F D I b3b72S4 a G fl SB T S ê | T - 33-13 MOTOROLA MJE13006 MJE13007 SEMICONDUCTOR TECHNICAL DATA D esigners Data, Sheet 8 AM PERE NPN SILICON POWER TRANSISTORS 3 00 and 4 0 0 V O L T S 80 W ATTS SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS
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b3b72S4
MJE13006
MJE13007
MJE13007E
JE13006
MJE13Q07
JE13007
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TOSHIBA 1N DIODE
Abstract: No abstract text available
Text: TOSHIBA {DI SC RE TE/ OPTO } "H 9097250 TOSHIBA DISCRETE/OPTO ¿ / o ìh ìh tt DE I T Q T T S S O QOlbñQO O I~~ 99D 16800 TOSHIBA F IE L D SEMICONDUCTOR DT-39-13 E FFE C T TRANSISTOR Ï T F - 2 4 2 SIL IC O N TECHNICAL DATA N CHANNEL MOS-TYPE ( Tl-MOS
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DT-39-13
100nA
250uA
00A/us
TOSHIBA 1N DIODE
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HIIA1
Abstract: No abstract text available
Text: ISOCOH COilPONENTS LTD ?SC D I 4 flflk, 5 1 0 QDOOlbfi fiTb • ISO D '7 '- V / ' - # 3 HIIA 1 OPTICALLY COUPLED ISOLATORS ISOCOM, INC. 274 E. HAMILTON AVE. SUITE F CAMPBELL, CA. 95008 PACKAGE DIMENSIONS IN INCHES MM » t SiSi • ooo. I 68 Si issj i e 0-13
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Motorola UHF Power Amplifier Module
Abstract: MHW812A3 motorola transistor cross reference 301H W812 EB107 MHW812A
Text: MO TO R O L A SC X ST RS /R F h^E b3ti72SH D l D l Db l S3E D noTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA MHW812A3 The RF Line UHF Power Am plifier . . . designed for 13 Volt UHF power amplifier applications in industrial and commercial FM equipment operating from 890 to 915 MHz.
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b3b72SH
EB-107.
MHW812A3
Motorola UHF Power Amplifier Module
MHW812A3
motorola transistor cross reference
301H
W812
EB107
MHW812A
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MJE8502
Abstract: MJE-8502 MJE8503 1N4934 221A-04 AN-222 AVALANCHE TRANSISTOR transistor ZA A3
Text: MOTOROLA SC XSTRS/R F 12E D | bBtiTSSM QOÛ53/i i e | T-33-13 MOTOROLA MJE8502 MJE8503 SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a ta S h e e t 5 .0 A M PER E NPN SILICON POWER T R A N SIST O R S SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS 7 0 0 and 8 0 0 V O LTS
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b3b725M
MJE8502
MJE8503
Time-25Â
MJE-8502
1N4934
221A-04
AN-222
AVALANCHE TRANSISTOR
transistor ZA A3
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