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    Microchip Technology Inc MSARS20E060G

    DIODE GEN PURP 600V 20A G-BODY
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    DigiKey MSARS20E060G Bulk
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    Microchip Technology Inc MSARS20E060G 3,671 52 Weeks
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    NAC MSARS20E060G 100
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    Avnet Silica MSARS20E060G 38 Weeks 100
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    Microchip Technology Inc MSARS20E060GR

    UFR,FRR _ C-Body Sq. Melf, Projected EOL: 2049-02-05
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    Microchip Technology Inc MSARS20E060GR 52 Weeks
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    NAC MSARS20E060GR 100
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    SARS2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SARS02 High Efficiency Snubber Diode Features and Benefits Description ▪ High Peak Reverse Voltage, VRM : 800 V ▪ Low Forward Voltage, VF : 0.92 V max. at IF = 1.5 A ▪ Peak Forward Surge Current, IFSM : 100 A ▪ Average Forward Current, IF(AV) : 1.2 A


    Original     		PDF SARS02 UL94V-0 SARS02 SARS02-DS

    linear L 9113 smd

    Abstract: MAXQ7667 APE12 Motorola transistor smd marking codes ultrasonic generator 20khz A3D5 Ultrasonic distance smd transistor marking sp1 MAXQ10 ultrasonic movement DETECTOR with alarm
    Text: Rev 0; 4/09 MAXQ7667 USER’S GUIDE BURST ENABLE BURST BURST OUTPUT, DUTY CYCLE, AND PULSE COUNTER 0.47µF 0.47µF REFBG REFSAR 0.47µF REFECHO AIN0 AIN1 AVDD AIN2 AIN3 THERMISTOR AIN4 AIN5 VOLTAGE REFERENCE SIGMA-DELTA ADC -1 2mV 0mV AVDD/2 MUX 120kΩ BATTERY+


    Original     		PDF MAXQ7667 470pF 16-BIT 16-MIPS BSP129 330pF linear L 9113 smd APE12 Motorola transistor smd marking codes ultrasonic generator 20khz A3D5 Ultrasonic distance smd transistor marking sp1 MAXQ10 ultrasonic movement DETECTOR with alarm

    Untitled

    Abstract: No abstract text available
    Text: SARS02 High Efficiency Snubber Diode Features and Benefits Description ▪ High Peak Reverse Voltage, VRM : 800 V ▪ Low Forward Voltage, VF : 0.92 V max. at IF = 1.5 A ▪ Peak Forward Surge Current, IFSM : 100 A ▪ Average Forward Current, IF(AV) : 1.2 A


    Original     		PDF SARS02 UL94V-0 SARS02 SARS02-DS