DSE010
Abstract: No abstract text available
Text: Ordering number : ENN4705A DSE010 Silicon Epitaxial Planar Type DSE010 Ultrahigh-Speed Switching Diodes Features • • • Package Dimensions Ideally suited for use in hybrid ICs because of Ultrasmall-sized package. Fast switching speed. Small interterminal capacitance.
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ENN4705A
DSE010
DSE010]
DSE010
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a1218
Abstract: A12181 2SK3557 MCH5908 ITR02749 ITR02750 2SK35
Text: MCH5908 Ordering number : ENA1218 SANYO Semiconductors DATA SHEET N-Channel Silicon Junction FET MCH5908 High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications Features • • Composite type with 2 J-FET contained in a MCPH5 package currently in use, improving the mounting
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MCH5908
ENA1218
MCH5908
2SK3557,
A1218-4/4
a1218
A12181
2SK3557
ITR02749
ITR02750
2SK35
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN7320A ESGD100 GaAs Schottky Barrier Diode ESGD100 X Band, Mixer, Modulator Applications Features Environmentally-considered chip scale package. Less parasitic components, conversion loss. unit : mm 1321A [ESGD100] Type No. Indication Top view
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ENN7320A
ESGD100
ESGD100]
ECSP1006-2
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN4902 N-Channel Silicon MOSFET 3SK265 VHF, CATV Tuner, High-Frequency Amplifier Applications Package Dimensions • Enhancement type. · Easy AGC Cut off at VG2S=0V . · Small noise figure. · High power gain. · Ideally suited for RF amplifier of CATV wide-band
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ENN4902
3SK265
3SK265]
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62944
Abstract: SVC241
Text: Ordering number:ENN6294 Silicon Diffused Junction Type SVC241 Varactor Diode For AM Up Conversion Tuning Use Package Dimensions • Twin type with a good linearity of C-V characteristic. Excels in large input characteristic. · Small package CP allows the applied sets to be
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ENN6294
SVC241
SVC241]
62944
SVC241
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EC2C01C
Abstract: TA-3094
Text: Ordering number : ENN6966 EC2C01C Silicon Diffused-Junction Type EC2C01C VCXO & VHF Band VCO Applications Varactor Diode Features High capacitance ratio. CR C1.0V / C4.0V =5.0typ Ultrasmall-sized package(1008), slim package (0.6mm), leadless package. unit : mm
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ENN6966
EC2C01C
EC2C01C]
ECSP1008-2
EC2C01C
TA-3094
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SVC237
Abstract: mm1292
Text: Ordering number : ENN6801 SVC237 Diffused Junction Type Silicon Diode SVC237 Varactor Diode for FM Receiver Electronic Tuning Use Features • • Low voltage 6.5V . Twin type varactor diode with good large-signal characteristics for FM receiver electronic tuning use.
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ENN6801
SVC237
SVC237]
SVC237
mm1292
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D2502
Abstract: ECSP1006-2 ESGD100
Text: Ordering number : ENN7320A ESGD100 GaAs Schottky Barrier Diode ESGD100 X Band, Mixer, Modulator Applications Features Environmentally-considered chip scale package. Less parasitic components, conversion loss. unit : mm 1321A [ESGD100] Type No. Indication Top view
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ENN7320A
ESGD100
ESGD100]
ECSP1006-2
D2502
ECSP1006-2
ESGD100
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3SK263
Abstract: 82599TH
Text: Ordering number:ENN4423A N-Channel Silicon MOSFET Dual Gate 3SK263 FM Tuner, VHF Tuner, High-Frequency Amplifier Applications Features Package Dimensions • Enhancement type. · Small noise figure. · Small cross modulation. unit:mm 2096A [3SK263] 0.5 1.9
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ENN4423A
3SK263
3SK263]
3SK263
82599TH
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SVC325
Abstract: IT0251
Text: Ordering number : ENN6649 SVC325 Diffused Junction Type Silicon Diode SVC325 Varactor Diode • • Package Dimensions Miniaturization and high-integration of tuner sets can be easily achieved due to the small package. High capacitance ratio and high quality factor.
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ENN6649
SVC325
SVC325]
SVC325
IT0251
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ENN4901
Abstract: 3SK264
Text: Ordering number:ENN4901 N-Channel Silicon MOSFET 3SK264 VHF Tuner, High-Frequency Amplifier Applications Features Package Dimensions • Enhancement type. · Easy AGC Cut off at VG2S=0V . · Small noise figure. · Excels in cross modulation characteristics.
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ENN4901
3SK264
3SK264]
ENN4901
3SK264
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SVC220
Abstract: "FM receiver" EN5994
Text: Ordering number:EN5994 SVC220 Diffused Junction Type Silicon Diode Varactor Diode for FM Receiver Electronic Tuning Use Features Package Dimensions • Twin type varactor diode with good large-signal characteristics for FM receiver electronic tuning use. · Very small package permits SVC220-applied sets to
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EN5994
SVC220
SVC220-applied
SVC220]
SVC220
"FM receiver"
EN5994
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diode marking 2b
Abstract: TA-3703 CPH5513 O1002
Text: Ordering number : ENN7311 CPH5513 Silicon Epitaxial Type CPH5513 Pin Diode for VHF, UHF, AGC Applications • • Small interterminal capacitance C=0.23pF typ . Small forward series resistance (rs=2.5Ω typ). Composite type with 2 diodes contained in a CPH
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ENN7311
CPH5513
CPH5513]
diode marking 2b
TA-3703
CPH5513
O1002
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TA 7310
Abstract: CPH5512 O1002 marking 2A
Text: Ordering number : ENN7310 CPH5512 Silicon Epitaxial Type CPH5512 Pin Diode for VHF, UHF, AGC Applications • • Small interterminal capacitance C=0.23pF typ . Small forward series resistance (rs=5Ω typ). Composite type with 2 diodes contained in a CPH
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ENN7310
CPH5512
CPH5512]
TA 7310
CPH5512
O1002
marking 2A
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DCB010
Abstract: No abstract text available
Text: Ordering number : EN1895B DCB010 Silicon Epitaxial Planar Type Cathode Common DCB010 Very High-Speed Switching Diode Features • • Package Dimensions Ideally suited for use in hybrid ICs because of very small-sized package. Fast switching speed. Small interterminal capacitance.
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EN1895B
DCB010
DCB010]
DCB010
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DLA11C
Abstract: MARKING LA
Text: Ordering number : ENN2795B DLA11C Silicon Diffused Junction Type DLA11C 1.1A Ultrahigh-Speed Rectifier Features • • Supports automatic mounting and permits DLA11Capplied sets to be made smaller. Fast reverse recovery time and small switching loss. Peak reverse voltage : VRM=200V.
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ENN2795B
DLA11C
DLA11Capplied
DLA11C]
DLA11C
MARKING LA
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D2016
Abstract: FTD2016
Text: Ordering number : ENN*0000 FTD2016 N-Channel Silicon MOSFET Transistor FTD2016 Preliminary • • • • Package Dimensions Low ON-resistance. 2.5V drive. Mounting height 1.1mm. Composite type, facilitating high-density mounting. unit : mm 2155A [FTD2016]
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FTD2016
FTD2016]
D2016
FTD2016
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SVC236
Abstract: No abstract text available
Text: Ordering number : ENN6800 SVC236 Diffused Junction Type Silicon Diode SVC236 Varactor Diode for FM Receiver Electronic Tuning Use Features • • • unit : mm 1169A [SVC236] 0.4 3 0.16 0 to 0.1 1.5 2.5 • Package Dimensions Low voltage 6.5V . Twin type varactor diode with good large-signal
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ENN6800
SVC236
SVC236]
SVC236-applied
SVC236
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6264
Abstract: SVC383 marking V3
Text: Ordering number:ENN6264 Diffused Junction Type Silicon Composite Varactor SVC383 AM Low Voltage Electronic Tuning Applications Features Package Dimensions • Twin type varactor diode for low-voltage AM electronic tuning use. · Low voltage 6.5V . · High Q.
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ENN6264
SVC383
SVC383
SVC383-applied
SVC383]
6264
marking V3
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1117b
Abstract: DCA010
Text: Ordering number : EN1892B DCA010 Silicon Epitaxial Planar Type Anode Common DCA010 Very High-Speed Switching Diode Features • • Package Dimensions Ideally suited for use in hybrid ICs because of very small-sized package. Fast switching speed. Small interterminal capacitance.
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EN1892B
DCA010
1117B
DCA010]
1117b
DCA010
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SB005W03
Abstract: marking LA
Text: SB005W03 Ordering number : ENN5229A SB005W03 Schottky Barrier Diode Twin Type • Cathode Common 30V, 50mA Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • • • • Low forward voltage (VF max=0.55V).
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SB005W03
ENN5229A
SB005W03
marking LA
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Untitled
Abstract: No abstract text available
Text: sa%yd Transistors Taping Packages below are available for automatic mounting. dk Example of marking : 2SC4641T-AA Contact sales offices for zigzag bended type of large box size. SANYO Electric Co. .Ltd. Semiconductor Business Headauarters. TR Division. 102
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2SC4641T-AA
UT931210TR
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DSB010
Abstract: No abstract text available
Text: I Ordering num ber : ENN3869B _ FC903 Silicon Epitaxial Planar Type ISAfiYOl High-Speed Switching Composite Diode Features Package Dimensions • Composite type with 3 diodes contained in the CP package currently in use, improving the mounting
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ENN3869B
FC903
FC903
DSB010,
FC903]
No3869-2/2
Q022T45
DSB010
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sanyo 2033
Abstract: 2SA608 2SC536 transistor 2sA608 TRANSISTOR IFW 2005A Sanyo 2SA1782 2SA608KNP 2SA608NP
Text: SA NY O S E M I C O N D U C T O R CORP s iS S fe 7T=i707b o o m i a o 32E D 2033 2oo3A T P N P Epitaxial P la n a r S ilic o n T ran sis to rs General-Purpose Amp, Switching Applications 334 I Features . The 2SA608 is classified into 2 types of SP, NP according to the case outline.
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1707k
T-27-/S"
2SA608
2SC536
2SA608.
2SA608SPA
2SA608NP
2SA608KNP
T-91-20
SC-43
sanyo 2033
transistor 2sA608
TRANSISTOR IFW
2005A
Sanyo
2SA1782
2SA608KNP
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