SAMSUNG VCP POWER SUPPLY Search Results

SAMSUNG VCP POWER SUPPLY

Contextual Info: KB8821/22/23 Data Sheet Ver. 1.0 KB8821/22/23 1.2G/2.0G/2.5G + 520MHz Dual Frequency Synthesizer DATA SHEET Version 1.0 July, 1999 CDMA TEAM SYSTEM LSI SEMICONDUCTOR SAMSUNG ELECTRONICS CO. Samsung Electronics Confidential Information KB8821/22/23 Data Sheet Ver. 1.0

Hctls05

Contextual Info: S A M S U N G S E M I C O N D U C T O R INC OS KS54HCTLS f ì C KS74HCTLS w De J 7 ^ 4 1 4 2 Q00b5fl4 4 Hex Inverters with Open-Drain Outputs — -:-• — t FEATURES DESCRIPTION • Function, pln-out, speed and drive compatibility with

alps vco

Abstract: Alps Electric vco tdh alps UCVA Alps Electric vco 64 n20 n S1M8821 S1M8821X01-R0T0 S1M8822 S1M8822X01-R0T0
Contextual Info: INTERGER RF/IF DUAL PLL S1M8821/22/23 INTRODUCTION 20-TSSOP-BD44 The S1M8821/22/23 is a high performance dual frequency synthesizer with integrated prescalers designed for RF operation up to 1.2GHz/2.0GHz/2.5GHz and IF operation up to 520MHz. The S1M8821/22/23 contains dual-modulus prescalers. The RF

alps vco

Abstract: alps rf
Contextual Info: INTERGER RF/IF DUAL PLL S1M8821/22/23 INTRODUCTION 20-TSSOP-BD44 The S1M8821/22/23 is a high performance dual frequency synthesizer with integrated prescalers designed for RF operation up to 1.2GHz/2.0GHz/2.5GHz and IF operation up to 520MHz. The S1M8821/22/23 contains dual-modulus prescalers. The RF

20-TSSOP

Abstract: KB8821 KB8822 KB8823
Contextual Info: PRELIMINARY SPECIFICATION V1.5 FREQUENCY SYNTHESIZER KB8821/22/23 INTRODUCTION The KB8821/22/23 are high performance dual frequency synthesizers with integrated prescalers designed for RF operation up to 1.2GHz/2.0GHz/2.5GHz and IF operation up to 520MHz.

10GHz counters

Abstract: UCVA3
Contextual Info: FRACTIONAL-N RF/INTEGER-N IF DUAL PLL S1M8836/37 Preliminary INTRODUCTION 24-QFN-3.5x4.5 The S1M8836/37 is a Fractional-N frequency synthesizer with integrated prescalers, designed for RF operation up to 1.0GHz/2.5GHz and for IF operation up to 520MHz. The fractional-N synthesizer allows fast-locking, low

ALPs modulator

Abstract: 10GHz OSCILLATOR pulse generator Alps Electric vco tdh alps 10GHz counters fractional N PLL w4-20 S1M8836 S1M8836X01-G0T0 S1M8837
Contextual Info: FRACTIONAL-N RF/INTEGER-N IF DUAL PLL S1M8836/37 INTRODUCTION 24-QFN-3.5x4.5 The S1M8836/37 is a Fractional-N frequency synthesizer with integrated prescalers, designed for RF operation up to 1.0GHz/2.5GHz and for IF operation up to 520MHz. The fractional-N synthesizer allows fast-locking, low

KM41C1000B-8

Abstract: KM41C1000B
Contextual Info: SAMSUNG ELECTRONICS INC 4SE D • 7 ^ 4 1 4 2 0G10022 5 KM41C1000B CMOS DRAM 1M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: two • • • • • • • • • tcAQ The Samsung KM41C1000B is a CMOS high speed

54B2

Abstract: HH-1M1608-600JT 20B3 diode tp807 TP889 hh-1m1608 RC410M IR 30D1 7E TP828 t9504
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS

GDDR2

Abstract: gDDR2-800
Contextual Info: 512M gDDR2 SDRAM K4N51163QC-ZC 512Mbit gDDR2 SDRAM Revision 1.3 Jun. 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

MCD2926

Abstract: MCD8825B GP214D TB31202 TB31202 "pin compatible" S1T8825 mcd8825 566 VCO CP12 CP21
Contextual Info: MC Devices General Description Features The MCD8825B is a high performance dual frequency synthesizer with RF operation frequency from 200MHz to 1.3GHz. The MCD8825B contains two dual modulus prescalers, three programmable counters, one crystal oscillator, two phase detectors, two

K4N1G164QF

Abstract: K4N1G164QF-BC20
Contextual Info: Rev. 1.1, Sep. 2010 K4N1G164QF 1Gb F-die gDDR2 SDRAM 84 FBGA with Lead-Free & Halogen-Free RoHS Compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

K4N1G164QE

Abstract: k4n1g164qe-hc20
Contextual Info: Rev. 1.33, Apr.2010 K4N1G164QE 1Gb E-die gDDR2 SDRAM 84 FBGA with Lead-Free & Halogen-Free RoHS Compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

ALPs modulator

Abstract: CH250 Alps Electric vco 64 fractional N PLL spur free fractional PLL Alps Electric vco 4X alps vco S1M8831A S1M8831A01-G0T0 S1M8833
Contextual Info: FRACTIONAL-N RF/INTEGER-N IF DUAL PLL S1M8831A/33 INTRODUCTION 24-QFN-3.5x4.5 The S1M8831A/33 is a Fractional-N frequency synthesizer with integrated prescalers, designed for RF operation up to 1.2GHz/K-PCS and for IF operation up to 520MHz. The fractional-N synthesizer allows fast-locking,

gDDR2-800

Contextual Info: 256M gDDR2 SDRAM K4N56163QF-GC 256Mbit gDDR2 SDRAM Revision 1.8 May 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

1m883

Abstract: CH575 31488 "digital noise generator" CH250 RFN20
Contextual Info: FRACTIONAL-N RF/INTEGER-N IF DUAL PLL S1M8831A/33 INTRODUCTION 24-QFN-3.5x4.5 The S1M8831A/33 is a Fractional-N frequency synthesizer with integrated prescalers, designed for RF operation up to 1.2GHz/K-PCS and for IF operation up to 520MHz. The fractional-N synthesizer allows fast-locking,

Contextual Info: DDR2 SDRAM 1G M-die DDR2 SDRAM 1Gb M-die DDR2 SDRAM Specification Version 1.4 July 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

K4T1G084QA-ZCE6

Abstract: K4T1G164QA-ZCE6 K4T1G084QA-ZCCC DDR2 Mechanical Dimensions K4T1G044QA-ZCCC K4T1G044QA-ZCD5 K4T1G044QA-ZCE6 K4T1G084QA-ZCE K4T1G164QA-ZCD5 sdram ddr2
Contextual Info: 1G A-die DDR2 SDRAM DDR2 SDRAM 1Gb A-die DDR2 SDRAM Specification Version 1.1 August 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

84FBGA

Contextual Info: DDR2 SDRAM K4T51163QE 512Mb E-die DDR2 SDRAM Specification Industrial Temp. 84FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

K4T51163QE

Abstract: K4T51163QE-ZIE6 DDR2-400 DDR2-533 DDR2-667 K4T51163QE-ZDE6
Contextual Info: DDR2 SDRAM K4T51163QE 512Mb E-die DDR2 SDRAM Specification Industrial Temp. 84FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: DDR2 SDRAM 256Mb F-die DDR2 SDRAM 256Mb F-die DDR2 SDRAM Specification Version 1.8 July 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

k4t2g084

Abstract: K4T2G084QM-ZCE6 DDR2-400 DDR2-533 DDR2-667
Contextual Info: Preliminary K4T2G044QM K4T2G084QM 2Gb DDR2 SDRAM 2Gb M-die DDR2 SDRAM Specification Version 0.1 March 2006 68FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

K4T51163QE

Contextual Info: K4T51043QE K4T51083QE K4T51163QE DDR2 SDRAM 512Mb E-die DDR2 SDRAM Specification Version 1.0 May 2006 60FBGA & 84FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Contextual Info: DDR2 SDRAM 1G A-die DDR2 SDRAM 1Gb A-die DDR2 SDRAM Specification Version 1.0 July 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,