SAMSUNG QUALIFICATION Search Results

SAMSUNG NAND Flash Qualification Report

Abstract: SAMSUNG 128Mb NAND Flash Qualification Reliability NAND "read disturb" Samsung NAND Qualification Reliability NAND Flash Qualification Reliability NAND qualification NAND read disturb 63-TBGA K9F2808U0C-YCB0 K9F2808U0C-YIB0
Contextual Info: SAMSUNG 128Mb NAND Flash Qualification & Reliability Report [ 128Mb NAND Flash C-die ] September, 2003 Rev. 01 Memory Quality Assurance The information contained in this document is proprietary to Samsung Electronics Co., Ltd. and shall be protected from any reproduction in part or as a whole without Samsung`s written approval.

Contextual Info: ACT8897 Rev 2, 05-Sep-13 Advanced PMU for Samsung S5PC100, S5PC110 and S5PV210 Processors FEATURES GENERAL DESCRIPTION • Optimized for Samsung S5PC100, S5PC110 and The ACT8897 is a complete, cost effective, highlyefficient ActivePMUTM power management solution,

J1587

Abstract: FM24653 ISO-14001 samsung appl ISO7816 smart card samsung lcd inverter pinout
Contextual Info: USER'S MANUAL S3F4A2FJ 16/32-BIT RISC MICROPROCESSOR December 2008 Preliminary Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2008 Samsung Electronics, Inc. All Rights Reserved Important Notice The information in this publication has been carefully

8937A

Abstract: A33KY25 S5PV210 application
Contextual Info: ACT8937A Rev 1, 22-Oct-12 Advanced PMU for Samsung S5PC100, S5PC110 and S5PV210 Processors FEATURES GENERAL DESCRIPTION • Optimized for Samsung S5PC100, S5PC110 and The ACT8937A is a complete, cost effective, highlyefficient ActivePMUTM power management solution,

sof11

Abstract: ISO-14001 J1587 FM24653
Contextual Info: USER'S MANUAL S3F4A2FR 16/32-BIT RISC MICROPROCESSOR December 2008 Preliminary Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2008 Samsung Electronics, Inc. All Rights Reserved Important Notice The information in this publication has been carefully

FM24653

Abstract: ISO-14001 J1587 A 3131 IC 80-TQF P15-24 Philips PM 2411
Contextual Info: USER'S MANUAL S3F4A2FR 16/32-BIT RISC MICROPROCESSOR December 2008 Preliminary Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2008 Samsung Electronics, Inc. All Rights Reserved Important Notice The information in this publication has been carefully

ST191

Abstract: sof11
Contextual Info: USER'S MANUAL S3F4A2FR 16/32-BIT RISC MICROPROCESSOR July 2009 Revision 1.10 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2009 Samsung Electronics, Inc. All Rights Reserved Important Notice The information in this publication has been carefully

S3F4A2F

Abstract: st stt 128 FM24653 ISO-14001 J1587 P873 p029
Contextual Info: USER'S MANUAL S3F4A2FR 16/32-BIT RISC MICROPROCESSOR December 2008 REV 1.00 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2008 Samsung Electronics, Inc. All Rights Reserved Important Notice The information in this publication has been carefully

Contextual Info: USER'S MANUAL S3F4A2FJ 16/32-BIT RISC MICROPROCESSOR December 2008 REV 1.00 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2008 Samsung Electronics, Inc. All Rights Reserved Important Notice The information in this publication has been carefully

SMFV004A

Contextual Info: SmartMediaTM SMFV004A Document Title 4M x 8 bit SmartMediaTM Card Revision History Revision No. History 0.0 Initial Issue Draft Date Remark April 10th 1999 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

Contextual Info: Preliminary SmartMediaTM SMFV002A Document Title 2M x 8 Bit SmartMediaTM Revision History Revision No. History 0.0 Data Sheet, 1999 Draft Date Remark April 10th 1999 Preliminary The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

Contextual Info: Preliminary SmartMediaTM SMFV008A Document Title 8M x 8 Bit SmartMediaTM Card Revision History Revision No. History 0.0 Initial Issue Draft Date Remark April 10th 1999 Preliminary The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

LPC250SM

Abstract: LPC241SM LPC247SM solar cell operating temperature range IEC61215 IEC61730 LPC250S LPC244SM LPC235SM LPC238SM
Contextual Info: Samsung takes on the Solar Challenge Developing viable solar power systems is one of the great tasks facing the world today, and Samsung is now in the race. We are poised to repeat our success in solar power generation. Our track record speaks for itself.

Contextual Info: FLASH MEMORY K9K2G08U0A Document Title 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue May. 31. 2004 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the

8934A

Abstract: A33KY25
Contextual Info: ACT8934A Rev 1, 22-Oct-12 Advanced PMU for Samsung S3C2416/S3C2450 FEATURES GENERAL DESCRIPTION • Optimized for Samsung S3C2416/S3C2450 The ACT8934A is a complete, cost effective, highlyefficient ActivePMUTM power management solution, optimized for the unique power, voltagesequencing, and control requirements of the

S418-xyz

Abstract: LPC247SM 6-1394461-2 LPC241SM LPC238SM LPC250SM IEC61215 IEC61730 LPC235SM LPC244SM
Contextual Info: Samsung takes on the Solar Challenge Developing viable solar power systems is one of the great tasks facing the world today, and Samsung is now in the race. We are poised to repeat our success in solar power generation. Our track record speaks for itself.

LPC247SM

Abstract: LPC235SM LPC250SM SAMSUNG SOLAR 250 IEC61215 LPC238SM samsung 649 LPC241SM LPC244SM IEC61730
Contextual Info: Samsung takes on the Solar Challenge Developing viable solar power systems is one of the great tasks facing the world today, and Samsung is now in the race. We are poised to repeat our success in solar power generation. Our track record speaks for itself.

Contextual Info: Advanced Information SmartMediaTM SMFDV064 Document Title 64M x 8 Bit SmartMediaTM Card Revision History Revision No 0.0 History Draft Date Remark Initial issue April 10th 1999 Advanced Information The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

KM29W16000BIT

Abstract: 400F KM29W16000BT
Contextual Info: KM29W16000BT, KM29W16000BIT Preliminary FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1999 Preliminary The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

Contextual Info: KM29U64000AT, KM29U64000AIT Preliminary FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1999 Preliminary The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

K9F4G08U0M

Abstract: K9F4G08U 52-ULGA 52ULGA K9K8G08U1M K9F4G08U0M-ICB0 K9F4G08 81h-10h K9F4G08U0M-YCB
Contextual Info: Advance FLASH MEMORY K9K8G08U1M K9F4G08U0M Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Nov. 15. 2004 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

K9F1G08

Abstract: K9F1G08U0A K9F1G08X0A K9F1G08Q0A ADD12 K9F1G08D0A-Y
Contextual Info: K9F1G08Q0A K9F1G08D0A K9F1G08U0A Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Aug. 24th. 2003 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

MAXIM 1535 CE

Contextual Info: S M F -06100 ELECTRONICS Samsung M icrow ave Sem iconductor G ain O ptim ized G aAs FET 2 -2 0 GHz Description Features The SMF-06100 is a 600 xm n-channel MESFET with 0.5 urn gate length, utilizing Samsung Microwave’s gain optimized G10 process. Ti/Pt/Au gate metallization and

Contextual Info: Preliminary SmartMediaTM K9S1608V0B-SSB0 Document Title 2M x 8 Bit SmartMediaTM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Data Sheet, 1999 April 10th 1999 0.1 Changed device name - SMFV002A -> K9S1608V0B-SSB0 Sep. 15th 1999 The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right