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    SAMSUNG POWER SUPPLY Search Results

    SAMSUNG POWER SUPPLY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74LV4T126FK Toshiba Electronic Devices & Storage Corporation Level shifter, Unidirectional, 1-Bit x 4 Single Supply Bus Buffer, US14, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74LV4T125FK Toshiba Electronic Devices & Storage Corporation Level shifter, Unidirectional, 1-Bit x 4 Single Supply Bus Buffer, US14, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=2 A / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=2 A / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=1 A / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    SAMSUNG POWER SUPPLY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    eMMC

    Abstract: samsung emmc boot Samsung EMMC "boot mode" samsung emmc emmc controller emmc operation emmc samsung emmc controller datasheet eMMC memory emmc reader
    Text: SEC-Mobile-moviNAND Power up for eMMC Application Note Version 1.0, April 2009 Samsung Electronics Copyright ⓒ 2006 Samsung Electronics Co.,LTD. Copyright 2009 Samsung Electronics Co, Ltd. All Rights Reserved. Though every care has been taken to ensure the accuracy of this document, Samsung


    Original     		PDF

    18b2 diode

    Abstract: BA41-00671A 30B4 DIODE 20B2 diode 5.1B3 B20 C875 B2 CIS10J270NC ICS951413CGLFT ATI IXP450 38b2
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS


    Original     		533/667MHz) RC410MD SB450 BA41-00659A BA41-00671A RC410MD/RC410ME Sheet18. Sheet19. 018nF 022nF 18b2 diode 30B4 DIODE 20B2 diode 5.1B3 B20 C875 B2 CIS10J270NC ICS951413CGLFT ATI IXP450 38b2 PDF

    54B2

    Abstract: HH-1M1608-600JT 20B3 diode tp807 TP889 hh-1m1608 RC410M IR 30D1 7E TP828 t9504
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS


    Original     		RC410MD SB450 BA41-00615A RC410MD Sheet18. Sheet19. Sheet20 TP682 TP685 TP686 54B2 HH-1M1608-600JT 20B3 diode tp807 TP889 hh-1m1608 RC410M IR 30D1 7E TP828 t9504 PDF

    55b1 SMD

    Abstract: 55B3 56B3 AM3 1A 12B nvidia NV43 audio woofer TP730 k4d553235f-vc2a smd code capacitor c435 S3F944
    Text: 4 3 SAMSUNG PROPRIETARY 2 1 THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D CICHLID II Sheet 1. COVER Sheet 2 - 5. DIAGRAM Block/Power & ANNOTATIONS


    Original     		Dothan533 BA41-00489A BA41-00537A Sheet16. Sheet17. Sheet18 TP722 TP717 TP989 55b1 SMD 55B3 56B3 AM3 1A 12B nvidia NV43 audio woofer TP730 k4d553235f-vc2a smd code capacitor c435 S3F944 PDF

    B30C300

    Abstract: 29A4 samsung electronics 10K 34C1 TP678 gfx E3 diode diode 39b2 TP730 NC7SZ175P6X_NL HDR-10P-SMD
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS


    Original     		BA41-00574A YONAH667 Sheet18. Sheet19. 047nF RHU002N06 12-C4 B30C300 29A4 samsung electronics 10K 34C1 TP678 gfx E3 diode diode 39b2 TP730 NC7SZ175P6X_NL HDR-10P-SMD PDF

    54B4

    Abstract: ALC286 BA41-00814A 218S6ECLA21FG BA41-00812A 54-B4 RS600ME RC410 BG41 mx25l8005m2c-15g
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2-6. DIAGRAM Block/Power & ANNOTATIONS


    Original     		800MHz) RS600ME SB600 BA41-00806A BA41-00812A BA41-00814A TP18830 TP18831 TP18832 TP18833 54B4 ALC286 218S6ECLA21FG 54-B4 RS600ME RC410 BG41 mx25l8005m2c-15g PDF

    BA41-00695A

    Abstract: TP1274 CONN-50P-FPC Socket AM2 samsung 30 pin lvds diagram 25a44 SMD AC P27 CY28447 samsung electronics ba41 GND103
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS


    Original     		BA41-00694A BA41-00695A YONAH667 047nF RHU002N06 12-C4 TP1274 CONN-50P-FPC Socket AM2 samsung 30 pin lvds diagram 25a44 SMD AC P27 CY28447 samsung electronics ba41 GND103 PDF

    2SD618

    Abstract: MOTHERBOARD INTEL G31 ICH7 SCHEMATIC DIAGRAM BC615 DIODE 20B2 samsung u252 20b1 diode TP-107-02 SAMSUNG R60 plus S3F94 SLB9635TT1.2
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents SEDONA_plus Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS


    Original     		Yonah667 BA41-00697A CALISTP11574 TP11575 TP11578 TP11579 TP11516 TP11517 TP11520 2SD618 MOTHERBOARD INTEL G31 ICH7 SCHEMATIC DIAGRAM BC615 DIODE 20B2 samsung u252 20b1 diode TP-107-02 SAMSUNG R60 plus S3F94 SLB9635TT1.2 PDF

    C547 c

    Abstract: BA41-00811A BA41-00791A R7790 Samsung Praha SRI Rev 1_0 keyboard and touchpad schematic ap4435gm Socket AM2 smd diode code F45 21Ring
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED 4 BY SAMSUNG. D Table of Contents Sheet 1. COVER Sheet 2-6. DIAGRAM Block/Power & ANNOTATIONS


    Original     		BA41-00791A BA41-00792A BA41-00811A 800MHz) RS600ME SB600 0033nF 018nF 022nF 027nF C547 c R7790 Samsung Praha SRI Rev 1_0 keyboard and touchpad schematic ap4435gm Socket AM2 smd diode code F45 21Ring PDF

    BA41-00791A

    Abstract: D51233 218S6ECLA21FG BA41-00811A R7790 AP680AGM Samsung Praha SRI Rev 1_0 HDR-10P-1R-SMD 88E8039 RS600ME
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED 4 BY SAMSUNG. D Table of Contents Sheet 1. COVER Sheet 2-6. DIAGRAM Block/Power & ANNOTATIONS


    Original     		800MHz) RS600ME SB600 BA41-00791A BA41-00792A BA41-00811A 022nF 027nF 047nF 0033nF D51233 218S6ECLA21FG R7790 AP680AGM Samsung Praha SRI Rev 1_0 HDR-10P-1R-SMD 88E8039 RS600ME PDF

    DIODE 20B2

    Abstract: CIS10J270NC ELM7S08WS BA41-0071 D5092 28B3 KBC3_SUSPWR RS600ME 218s6ecla21fg K45 S2
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D Table of Contents FIRENZE2-R Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS


    Original     		533/667MHz) RS600ME SB600 BA41-00714A BA41-00715A 022nF 027nF 047nF 0033nF 018nF DIODE 20B2 CIS10J270NC ELM7S08WS BA41-0071 D5092 28B3 KBC3_SUSPWR RS600ME 218s6ecla21fg K45 S2 PDF

    Untitled

    Abstract: No abstract text available
    Text: ACT8894 Rev 2, 06-Sep-13 Advanced PMU for Samsung S3C2416/S3C2450 FEATURES GENERAL DESCRIPTION • Optimized for Samsung S3C2416/S3C2450 The ACT8894 is a complete, cost effective, highlyefficient ActivePMUTM power management solution, optimized for the unique power, voltagesequencing, and control requirements of the


    Original     		ACT8894 06-Sep-13 S3C2416/S3C2450 ACT8894 S3C2416/S3C2450 TQFN44-32 PDF

    s3c2416

    Abstract: No abstract text available
    Text: ACT8894 Product Brief, 16-Aug-13 Advanced PMU for Samsung S3C2416/S3C2450 FEATURES GENERAL DESCRIPTION • Optimized for Samsung S3C2416/S3C2450 The ACT8894 is a complete, cost effective, highlyefficient ActivePMUTM power management solution, optimized for the unique power, voltagesequencing, and control requirements of the


    Original     		ACT8894 16-Aug-13 S3C2416/S3C2450 ACT8894 S3C2416/S3C2450 700mA 150mA 250mA s3c2416 PDF

    KA3S0880R

    Abstract: samsung tv
    Text: SAMSUNG POWER SWITCH KA3S0880R SAMSUNG POWER SWITCH The SPS product family is specially designed for an off line SMPS with minimal external component. The SPS consist of high voltage Power SenseFET and current mode control IC. Included control IC features a tr-immed oscillator, under voltage lock out, leading edge blanking,


    Original     		KA3S0880R dson15 KA3S0880R samsung tv PDF

    8934A

    Abstract: A33KY25
    Text: ACT8934A Rev 1, 22-Oct-12 Advanced PMU for Samsung S3C2416/S3C2450 FEATURES GENERAL DESCRIPTION • Optimized for Samsung S3C2416/S3C2450 The ACT8934A is a complete, cost effective, highlyefficient ActivePMUTM power management solution, optimized for the unique power, voltagesequencing, and control requirements of the


    Original     		ACT8934A 22-Oct-12 S3C2416/S3C2450 ACT8934A S3C2416/S3C2450 TQFN55-40 8934A A33KY25 PDF

    Untitled

    Abstract: No abstract text available
    Text: ACT8897 Rev 2, 05-Sep-13 Advanced PMU for Samsung S5PC100, S5PC110 and S5PV210 Processors FEATURES GENERAL DESCRIPTION • Optimized for Samsung S5PC100, S5PC110 and The ACT8897 is a complete, cost effective, highlyefficient ActivePMUTM power management solution,


    Original     		ACT8897 05-Sep-13 S5PC100, S5PC110 S5PV210 ACT8897 PDF

    Samsung s5pv210

    Abstract: S5PC110
    Text: ACT8897 Product Brief, 16-Aug-13 Advanced PMU for Samsung S5PC100, S5PC110 and S5PV210 Processors FEATURES GENERAL DESCRIPTION • Optimized for Samsung S5PC100, S5PC110 and The ACT8897 is a complete, cost effective, highlyefficient ActivePMUTM power management solution,


    Original     		ACT8897 16-Aug-13 S5PC100, S5PC110 S5PV210 ACT8897 Samsung s5pv210 PDF

    8937A

    Abstract: A33KY25 S5PV210 application
    Text: ACT8937A Rev 1, 22-Oct-12 Advanced PMU for Samsung S5PC100, S5PC110 and S5PV210 Processors FEATURES GENERAL DESCRIPTION • Optimized for Samsung S5PC100, S5PC110 and The ACT8937A is a complete, cost effective, highlyefficient ActivePMUTM power management solution,


    Original     		ACT8937A 22-Oct-12 S5PC100, S5PC110 S5PV210 ACT8937A 8937A A33KY25 S5PV210 application PDF

    Untitled

    Abstract: No abstract text available
    Text: b7E T> m TTbMlME G01S111 S04 SAMSUNG ELECTRONICS INC DRAM MODULES KMM594020B 4M x9 DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594020B is a4 M b its x 9 Dynamic RAM high density memory module. The Samsung KMM594020B


    OCR Scan     		G01S111 KMM594020B KMM594020B 20-pin 30-pin 22/iF KMM594020B-6 110ns KMM594020B-7 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E J> • 7 ^ 4 1 4 5 GG151Q1 3b5 m S tlG K KMM584020B DRAM MODULES 4M x8 DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584020B is a 4M bitsx8 Dynamic RAM high density memory module. The Samsung KMM584020B


    OCR Scan     		GG151Q1 KMM584020B KMM584020B 20-pin 30-pin KMM584020B-6 110ns KMM584020B-7 130ns PDF

    KMM581000BN

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E » • 7 i b 4 1 4 2 001S0Ö1 747 MSflGK KMM581020BN DRAM MODULES 1Mx8 DRAM SIMM Memory Module, bow Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581020BN is a 1M bitsx8 Dynamic RAM high density memory m odule. The Samsung


    OCR Scan     		001S0Ã KMM581020BN KMM581020BN KMM581000BN KM44C1000BU 20-pin 30-pin 22/tF 110ns KMM581020BN-7 PDF

    KMM332V120CT-L7

    Abstract: KM44V1000CLT
    Text: DRAM MODULE KMM332V120CT KMM332V120CT Fast Page Mode 1Mx32 DRAM DIMM based on 1Mx4 Low Power, 1K Refresh , 3.3V GENERAL DESCRIPTIO N The Samsung KMM332V120CT is a 1M bit x 32 Dynamic RAM low power memory module. The Samsung KMM332V120CT consists of eight CMOS


    OCR Scan     		KMM332V120CT 1Mx32 KMM332V120CT- KMM332V120CT-L7 KMM332V12: KMM332V120CT 20-pin 72-pin KM44V1000CLT PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7=ib4]i 42 ü ü m 4 7 cl flES DRAM MODULES KMM591020AN 1 M x 9 DRAM SIMM Memory Module with Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM591020AN is a 1M b it x 9 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM591020AN KMM591020AN KM44C1020ALJ 20-pin KM41C1000BLJ 30-pin 130ns 150ns PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM332V120CT DRAM MODULE KMM332V120CT Fast Page Mode 1Mx32 DRAM DIMM based on 1Mx4 Low Power, 1K Refresh , 3.3V G EN ERA L D ESC RIPTIO N The Samsung KMM332V120CT is a 1M bit x 32 Dynamic RAM low power memory module. The Samsung KMM332V120CT consists ot eight CMOS


    OCR Scan     		KMM332V120CT KMM332V120CT 1Mx32 20-pin 72-pin 00E004Ã PDF