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    SAMSUNG NOR NAND DDR MCP Search Results

    SAMSUNG NOR NAND DDR MCP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54H30J Rochester Electronics LLC NAND Gate Visit Rochester Electronics LLC Buy
    DM74LS22J Rochester Electronics LLC DM74LS22 - NAND Logic Gate Visit Rochester Electronics LLC Buy
    54H30J/C Rochester Electronics LLC 54H30 - NAND Gate Visit Rochester Electronics LLC Buy
    946HM/C Rochester Electronics LLC 946 - NAND Gate Visit Rochester Electronics LLC Buy
    MC2101F Rochester Electronics LLC MC2101F - Dual NAND Logic Gate Visit Rochester Electronics LLC Buy

    SAMSUNG NOR NAND DDR MCP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    samsung 2GB X16 Nand flash

    Abstract: SAMSUNG MCp samsung camera module samsung NAND Flash DIE MCP Technology Trend samsung 2GB Nand flash SAMSUNG MCp nand ddr SAMSUNG MCp nand ddr sram 256mb 512MB NOR FLASH
    Text: Multi-Chip Package Technology from Samsung The ultimate memory solution for mobile devices MCPs: New Memory Solution for Today’s Handhelds As the popularity of handheld electronic devices continues to expand, the Best Source for MCPs memory solution of choice for designers of these products has become


    Original     		PDF BR-06-MEM-001 samsung 2GB X16 Nand flash SAMSUNG MCp samsung camera module samsung NAND Flash DIE MCP Technology Trend samsung 2GB Nand flash SAMSUNG MCp nand ddr SAMSUNG MCp nand ddr sram 256mb 512MB NOR FLASH

    K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION


    Original     		PDF BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B

    S3F84VBXZZ-QT8B

    Abstract: S3FC40DXZZ-QA8D S6D0129 S3F84vb sc32442 S3F84VBXZZ-AT9B S3P848AX S3F84UAXZZ-QZ8A s3p863ax S3F441FXZZ-ETRF
    Text: Samsung Semiconductor, Inc. Product Selection Guide System LSI August 2007 SYSTEM LSI PAGE ASIC / FOUNDRY 3 ASIC ORDERING INFORMATION 4 CMOS IMAGE SENSORS 5 LCD DRIVER ICs 5-6 LCD DRIVER IC ORDERING INFORMATION 7 MOBILE APPLICATION PROCESSORS 8 HDTV/STB PRODUCTS


    Original     		PDF 300mm SSTL18 BR-07-ALL-002 S3F84VBXZZ-QT8B S3FC40DXZZ-QA8D S6D0129 S3F84vb sc32442 S3F84VBXZZ-AT9B S3P848AX S3F84UAXZZ-QZ8A s3p863ax S3F441FXZZ-ETRF

    K524G2GACB-A050

    Abstract: samsung "nand flash" derating K524G2GACB MCP 256M nand samsung mobile DDR nand flash DQS KF94 samsung MCP K5 transistor BA 92 samsung transistor 4gb nand flash SAMSUNG MCp nand ddr
    Text: K524G2GACB-A050 MCP MEMORY MCP Specification 4Gb NAND Flash + 2Gb Mobile DDR INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K524G2GACB-A050 A10/AP K524G2GACB-A050 samsung "nand flash" derating K524G2GACB MCP 256M nand samsung mobile DDR nand flash DQS KF94 samsung MCP K5 transistor BA 92 samsung transistor 4gb nand flash SAMSUNG MCp nand ddr

    K4X2G323PD8GD8

    Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
    Text: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from


    Original     		PDF BR-12-ALL-001 K4X2G323PD8GD8 K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    marvell armada 310

    Abstract: Toshiba emmc
    Text: Cover Marvell ARMADA 16x Applications Processor Family Version 3.2.x Boot ROM Reference Manual Doc. No. MV-S301208-00, Rev. November 2010 PUBLIC RELEASE Marvell. Moving Forward Faster Marvell® ARMADA 16x Applications Processor Family Version 3.2.x Boot ROM Reference Manual


    Original     		PDF MV-S301208-00, MV-S301208-00 marvell armada 310 Toshiba emmc

    samsung ddr3 ram MTBF

    Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
    Text: PRODUCT SELECTION GUIDE LCD, Memory and Storage | 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-12-ALL-001 samsung ddr3 ram MTBF KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd

    s3c6400

    Abstract: MIPI spec ARM1176JZF-S samsung samsung MFC video S3C64 samsung s3c6400 MIPI HSI samsung h.264 encoder oneDRAM samsung h.264
    Text: y inaarry imin PPrreelilm Product Technical Brief S3C6400 Rev 1.5, Jun. 2007 Overview S3C6400 is a 16/32-bit RISC cost-effective, low power, high performance micro-processor solution for mobile phones and general applications. To provide optimized H/W performance for


    Original     		PDF S3C6400 S3C6400 16/32-bit 64/32-bit 32-bit 400MHz 533MHz MIPI spec ARM1176JZF-S samsung samsung MFC video S3C64 samsung s3c6400 MIPI HSI samsung h.264 encoder oneDRAM samsung h.264

    KBY00

    Abstract: LPDDR 8Gb 137FBGA KBY00U00VA MCP 256M nand samsung mobile DDR samsung "nand flash" derating SAMSUNG MCP sdram 2g "4bit correction" DQ28D
    Text: Rev. 1.0, Jul. 2010 KBY00U00VA-B450 MCP Specification 8Gb DDP 512M x16 NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS,2CKE DDP Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF KBY00U00VA-B450 A10/AP KBY00 LPDDR 8Gb 137FBGA KBY00U00VA MCP 256M nand samsung mobile DDR samsung "nand flash" derating SAMSUNG MCP sdram 2g "4bit correction" DQ28D

    K9HDG08U1A

    Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
    Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-11-ALL-001 K9HDG08U1A K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe

    s3c6410x

    Abstract: S3C6410 s3c6410 external interrupt s3c6410 arm1176JZF datasheet samsung S3C6410 s3c6410 datasheet Samsung S3C6410 ARM S3C6410X5D S3C6430 oneDRAM
    Text: y inaarry imin PPrreelilm Product Technical Brief S3C6410 July 2008 Overview S3C6410 is a 16/32-bit RISC cost-effective, low power, high performance micro-processor solution for mobile phones, Portable Navigation Devices and other general applications. To provide optimized H/W performance for the


    Original     		PDF S3C6410 S3C6410 16/32-bit 64/32-bit 424-pins S3C6410X5A 491-pins 533MHz 667MHz s3c6410x s3c6410 external interrupt s3c6410 arm1176JZF datasheet samsung S3C6410 s3c6410 datasheet Samsung S3C6410 ARM S3C6410X5D S3C6430 oneDRAM

    emmc pin

    Abstract: emmc 5.0 samsung eMMC 5.0 221 ball eMMC memory emmc controller emmc jedec mechanical standard data retention samsung eMMC NUMONYX emmc eMMC slc mode NAND08GAH
    Text: NAND114AQA5M 1-Gbit, demux I/O OneNAND , 1-Gbyte NAND with MMC™ interface & 1-Gbit x32 DDR LPSDRAM MCP Preliminary Data Features • MCP (multichip package) – 1-Gbit (x16) high-density SLC large page OneNAND™ flash memory(a) – 1-Gbit (x32) DDR LPSDRAM


    Original     		PDF NAND114AQA5M LFBGA199 emmc pin emmc 5.0 samsung eMMC 5.0 221 ball eMMC memory emmc controller emmc jedec mechanical standard data retention samsung eMMC NUMONYX emmc eMMC slc mode NAND08GAH

    eMMC data retention

    Abstract: emmc jedec mechanical standard data retention samsung emmc boot emmc 5.0 numonyx oneNand flash Samsung EMMC "boot mode" samsung eMMC emmc Initialization eMMC samsung eMMC 5.0
    Text: NAND225AQA9P 2-Gbit demux I/O OneNAND , 2-Gbyte NAND with MMC™ interface & 2x1-Gbit x32 DDR LPSDRAM MCP Preliminary Data Features • MCP (multichip package) – 2-Gbit (x16) high-density SLC large page OneNAND™ flash memory(a) – 2x1-Gbit (x32) DDR LPSDRAM


    Original     		PDF NAND225AQA9P LFBGA199 eMMC data retention emmc jedec mechanical standard data retention samsung emmc boot emmc 5.0 numonyx oneNand flash Samsung EMMC "boot mode" samsung eMMC emmc Initialization eMMC samsung eMMC 5.0

    emmc pin

    Abstract: 221 ball eMMC memory numonyx oneNand flash samsung emmc boot eMMC slc mode emmc 5.0 samsung eMMC 5.0 emmc boot operation emmc jedec Flash Memory SAMSUNG OneNAND mcp
    Text: NAND114APA5M 1-Gbit, mux I/O OneNAND , 1-Gbyte NAND with MMC™ interface & 1-Gbit x32 DDR LPSDRAM MCP Preliminary Data Features • ■ ■ MCP (multichip package) – 1-Gbit (x16) high-density SLC large page OneNAND™ flash memory(a) – 1-Gbit (x32) DDR LPSDRAM


    Original     		PDF NAND114APA5M LFBGA199 emmc pin 221 ball eMMC memory numonyx oneNand flash samsung emmc boot eMMC slc mode emmc 5.0 samsung eMMC 5.0 emmc boot operation emmc jedec Flash Memory SAMSUNG OneNAND mcp

    emmc 5.0

    Abstract: numonyx oneNand flash NUMONYX emmc samsung eMMC 5.0 eMMC driver eMMC powerdown emmc samsung eMMC samsung emmc boot samsung mcp emmc
    Text: NAND225AQA5P 2-Gbit demux I/O OneNAND , 2-Gbyte NAND with MMC™ interface & 2x1-Gbit x32 DDR LPSDRAM MCP Preliminary Data Features • MCP (multichip package) – 2-Gbit (x16) high-density SLC large page OneNAND™ flash memory(a) – 2x1-Gbit (x32) DDR LPSDRAM


    Original     		PDF NAND225AQA5P LFBGA199 emmc 5.0 numonyx oneNand flash NUMONYX emmc samsung eMMC 5.0 eMMC driver eMMC powerdown emmc samsung eMMC samsung emmc boot samsung mcp emmc

    MIPI spec

    Abstract: S3C6410 Samsung S3C6410 ARM samsung S3C6410 s3c6410 arm1176JZF datasheet S3C6430 s3c6410 datasheet MIPI HSI samsung MFC video S3C64
    Text: y inaarry imin PPrreelilm Product Technical Brief S3C6410 Rev 2.0, August. 2007 Overview S3C6410 is a 16/32-bit RISC cost-effective, low power, high performance micro-processor solution for mobile phones, Portable Navigation Devices and other general applications.


    Original     		PDF S3C6410 S3C6410 16/32-bit 64/32-bit 16-bit 533MHz 667MHz MIPI spec Samsung S3C6410 ARM samsung S3C6410 s3c6410 arm1176JZF datasheet S3C6430 s3c6410 datasheet MIPI HSI samsung MFC video S3C64

    153-FBGA

    Abstract: 153FBGA 153Ball FBGA samsung "nand flash" derating MCP LPDDR 1Gb 512Mb K522H1HACF-B050 k522h1 MCP 256M nand samsung mobile DDR MCP 1Gb nand 512mb dram 130 2gb nand mcp
    Text: Rev. 1.0, Oct. 2010 K522H1HACF-B050 MCP Specification 2Gb 128M x16 NAND Flash + 1Gb (64M x16 ) Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K522H1HACF-B050 A10/AP 153-FBGA 153FBGA 153Ball FBGA samsung "nand flash" derating MCP LPDDR 1Gb 512Mb K522H1HACF-B050 k522h1 MCP 256M nand samsung mobile DDR MCP 1Gb nand 512mb dram 130 2gb nand mcp

    tsop-56 samsung

    Abstract: TC58DVM72A1FTI0 tc58fvm5t2atg TSOP1-48 THNCF1G02DG THNCF1G02DGI SD-M512 TC58NVG0S3AFTI5 THNCF128MMG toshiba Nand flash bga
    Text: TOSHIBA FLASH Network FCRAM NOR Flash SRAM Memory Selection Guide PSRAM NAND Flash Multi-Chip Packages Memory Cards September 2004 Toshiba America Electronic Components TOSHIBA Toshiba offers one of the widest varieties of memory products of any semiconductor manufacturer. Based on the three core memory technologies:


    Original     		PDF 576Mb 256Mb tsop-56 samsung TC58DVM72A1FTI0 tc58fvm5t2atg TSOP1-48 THNCF1G02DG THNCF1G02DGI SD-M512 TC58NVG0S3AFTI5 THNCF128MMG toshiba Nand flash bga

    K9HCG08U5M

    Abstract: K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand
    Text: SAMSUNG Mobile Memory C ontents NAND Flash NOR Flash One NAND Mobile DRAM movi NAND™ SSD Multi Media Card Living in NAND Flash world Living in the stage of 20GB memory after passing through the dark-age of 1GB in 2002, the mobile & consumer electronics now start to feel the needs


    OCR Scan     		PDF 120GB 128MB 256MB 128MB 512MB K9HCG08U5M K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand

    S6B33D1

    Abstract: S6B33B6 S6D0164 S3C2443 LCD TV Samsung regulator S6D0154 S3C2412 S6B33BG s5k4ba amoled driver
    Text: SAMSUNG ? Mobile Solution Forum 20Ü 7 Mobile Solution System LSI Contents - Application Processor Sam sung Sam sung Sam sung Sam sung 04 S3C2413 06 S 3C S3C2443 10 S3C6400 12 - CMOS Image Sensor


    OCR Scan     		PDF S3C2413 S3C2412 S3C2443 S3C6400 S5M8602/S3C4F31 S6B33D1 S6B33B6 S6D0164 LCD TV Samsung regulator S6D0154 S6B33BG s5k4ba amoled driver