K5E1H12ACM
Abstract: samsung K5E1H12ACM samsung mobile samsung nand ddr SEC k4x DDR333 samsung ddr samsung dram
Text: SEC-Mobile DRAM Mobile DRAM’s Frequently violated parameters Application Note Version 1.0 May 2009 Samsung Electronics Copyright ⓒ 2009 Samsung Electronics Co.,LTD. Copyright 2009 Samsung Electronics Co, Ltd. All Rights Reserved. Though every care has been taken to ensure the accuracy of this document, Samsung
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figure15.
Figure15
120ns,
K5E1H12ACM
samsung K5E1H12ACM
samsung mobile
samsung nand ddr
SEC k4x
DDR333
samsung ddr
samsung dram
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lpddr2 pcb design
Abstract: lpddr2 samsung lpddr2 lpddr2 datasheet LPDDR2 SDRAM samsung samsung* lpddr2 lpddr2 samsung lp-ddr2 Datasheet LPDDR2 SDRAM "read channel" Samsung
Text: SEC-Mobile-UtRAM Application Note for General PCB Design Guidelines for Mobile DRAM Version 1.0, May 2009 Samsung Electronics Copyright ⓒ 2009 Samsung Electronics Co., LTD. Copyright 2009 Samsung Electronics Co, Ltd. All Rights Reserved. Though every care has been taken to ensure the accuracy of this document, Samsung
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40ohm
800Mbps
48ohm
lpddr2 pcb design
lpddr2
samsung lpddr2
lpddr2 datasheet
LPDDR2 SDRAM samsung
samsung* lpddr2
lpddr2 samsung
lp-ddr2
Datasheet LPDDR2 SDRAM
"read channel" Samsung
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K9F2G08U0C
Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM
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BR-10-ALL-001
K9F2G08U0C
K9K8G08U0D
K9ABG08U0A
K4X2G323PC
K9F4G08U0B-PCB0
K9F1G08U0C
K9F2G08U0B
K9F2G08U0B-PCB0
K9F1G08U0D-SCB0
K9WBG08U1M-PIB0
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K9F2G08U0B
Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM
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BR-09-ALL-001
K9F2G08U0B
K9HCG08U1M-PCB0
K9NCG08U5M-PCB0
K9F1G08U0C
K9F4G08U0B-PCB0
K9F2G08U0B-PCB0
K9F4G08U0B
K9WBG08U1M
K9F1G08U0C-PCB0
K9G4G08U0B
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samsung eMMC 4.5
Abstract: eMMC samsung* lpddr2 lpddr2 SAMSUNG emmc emmc 4.5 emmc samsung SAMSUNG moviNAND lpddr2 mcp samsung lpddr2
Text: Samsung Mobile Memory Taking Mobility to New Storage Horizons Mobile DRAM | Multi-Chip Packages | eMMC Samsung Mobile Memory Mobile DRAM The future of Mobile DRAM Performance and battery life are the key metrics upon which mobile electronics are measured. Samsung Mobile
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BRO-09-DRAM-001
samsung eMMC 4.5
eMMC
samsung* lpddr2
lpddr2
SAMSUNG emmc
emmc 4.5
emmc samsung
SAMSUNG moviNAND
lpddr2 mcp
samsung lpddr2
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR: AN OVERVIEW Samsung Semiconductor is a unit of the Samsung Group, a worldwide, Korean-based chaebol conglomer ate of 34 companies that enjoyed sales of $48 billion in 1992. Sales of Samsung Electronics Co., Ltd., of which Samsung Semiconductor is a division, were more than
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D • 7^4142 KMM5401000B/BG GD1514b 523 I SP1GK DRAM MODULES 1Mx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5401000B is a 1M bitsx40 Dynamic RAM high density memory module. The Samsung
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KMM5401000B/BG
GD1514b
1Mx40
KMM5401000B
bitsx40
20-pin
72-pin
110ns
KMM5401000B-7
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC L7E D • 7^4142 KMM540512CM DD1 S D 7 0 ‘I b i DRAM MODULES 512Kx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM540512CM isa512Kbitsx40 Dynamic RAM high density memory module. The Samsung
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KMM540512CM
512Kx40
KMM540512CM
isa512Kbitsx40
256Kx4
20-pin
72-pin
KMM540512CM-6
KMM540512CM-7
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E ]> QD1SSSQ ^35 I SMGK • KM M5324000V/VG/VP DRAM MODULES 4M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5324000V is a 4M bitsx32 Dynamic RAM high density memory module. The Samsung
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OCR Scan
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M5324000V/VG/VP
KMM5324000V
bitsx32
24-pin
72-pin
110ns
KMM5324000V-7
130ns
KMM5324000V-8
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samsung LRA
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC h 4E D • TTbMlMi 0014742 4flb ■ SMÛK KMM536512W3/W3G DRAM MODULES 512K x36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM536512W3 is a512K bit x 36 Dynamic RAM high density memory module. The Samsung
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OCR Scan
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KMM536512W3/W3G
KMM536512W3
a512K
40-pin
72-pin
22fiF
KMM536512W3-7
130ns
KMM536512W3-8
samsung LRA
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Untitled
Abstract: No abstract text available
Text: b7E T> m TTbMlME G01S111 S04 SAMSUNG ELECTRONICS INC DRAM MODULES KMM594020B 4M x9 DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594020B is a4 M b its x 9 Dynamic RAM high density memory module. The Samsung KMM594020B
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G01S111
KMM594020B
KMM594020B
20-pin
30-pin
22/iF
KMM594020B-6
110ns
KMM594020B-7
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E » • V'ìbMmE GD1SE3T E74 KMM5916000/T DRAM MODULES 1 6 M x 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION * Performance range: The Samsung KMM5916000/T is a 16M b itx 8 Dynamic RAM high density memory module. The Samsung
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KMM5916000/T
KMM5916000/T
KM41C16000/T
24-pin
30-pin
22/uF
KMM5916000-6
110ns
KMM5916000-7
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E D • TRhMlMS DOlMMhT T6b mSt\GK KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung
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KMM591000AN
591000AN
KMM591OOOAN
KM44C1OOOAJ
20-pin
KM41C1OOOBJ
30-pin
22fiF
130ns
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 DD1S1S2 Ô27 I SMGK KMM5401000BM DRAM MODULES 1Mx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5401000BM is a 1M b itsx4 0 Dynamic RAM high density m em ory module. The Samsung
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OCR Scan
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KMM5401000BM
1Mx40
KMM5401000BM
20-pin
72-pin
22/iF
110ns
KMM5401000BM-7
130ns
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KMM5361000
Abstract: KMM5361000/A
Text: SAMSUNG ELECTRONICS INC 42E ]> • T ^ b M m s GülGSlb Ô KMM5361000 DRAM MODULES 'T - % iï~ n 1 M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5361000 is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung
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KMM5361000
KMM5361000
bitsX36
20-pin
72-pin
150ns
KMM5361000-10
KMM5361000-
KMM5361000/A
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Untitled
Abstract: No abstract text available
Text: SAMSUNG EL ECTRONICS INC b?E D • 7^4142 KMM5402000BM 0 0 1 5 1 ^ 4 26b ■ SH6 K DRAM MODULES 2Mx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5402000BM is a 2M bitsx40 Dynamic RAM high density memory module. The Samsung
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OCR Scan
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KMM5402000BM
2Mx40
KMM5402000BM
bitsx40
20-pin
72-pin
22fiF
110ns
KMM5402000BM-7
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELE CTRONICS INC b?E D • 7^4142 KMM584000B ODISCHb 176 ■ SM6K DRAM MODULES 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000B is a 4M b itx 8 Dynamic RAM high density memory module. The Samsung
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KMM584000B
KMM584000B
KM41C4000BJ
20-pin
30-pin
22/iF
KMM584000B-6
110ns
M584000B-7
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E J> • 7 ^ 4 1 4 5 GG151Q1 3b5 m S tlG K KMM584020B DRAM MODULES 4M x8 DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584020B is a 4M bitsx8 Dynamic RAM high density memory module. The Samsung KMM584020B
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OCR Scan
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GG151Q1
KMM584020B
KMM584020B
20-pin
30-pin
KMM584020B-6
110ns
KMM584020B-7
130ns
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC m 42E D 7^4142 KMM581000B GGlüMlö ñ «SPICK DRAM MODULES i'T 'Q U ^ n 1MX8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000B Is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung
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OCR Scan
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KMM581000B
581000B
KMM581
KM41C1OOOBJ
20-pln
30-pin
581000B-
130ns
150ns
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PDF
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SP16K
Abstract: kmm5362003
Text: SAMSUNG ELECTRONICS b?E D INC • ? cJbmHH D015BbB bS7 I KMM5362003/G SP16K DRAM MODULES 2M x36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • P erform ance range: The Samsung KMM5362003/G is a 2M b itx 3 6 Dynamic RAM high density m em ory module. The Samsung
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OCR Scan
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D015BbB
SP16K
KMM5362003/G
KMM5362003-7
KMM5362003-8
110ns
150ns
in20-pin
SP16K
kmm5362003
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KMM581000BN
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E » • 7 i b 4 1 4 2 001S0Ö1 747 MSflGK KMM581020BN DRAM MODULES 1Mx8 DRAM SIMM Memory Module, bow Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581020BN is a 1M bitsx8 Dynamic RAM high density memory m odule. The Samsung
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OCR Scan
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001S0Ã
KMM581020BN
KMM581020BN
KMM581000BN
KM44C1000BU
20-pin
30-pin
22/tF
110ns
KMM581020BN-7
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E ]> • GG1472D AIS «SI1GK 7WIHE KMM532512W/WG DRAM MODULES 512K.X32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e range: The Samsung KMM532512W is a 512K bit x 3 2 Dynam ic RAM high density memory module. The Samsung
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OCR Scan
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GG1472D
KMM532512W/WG
KMM532512W
40-pin
72-pin
22jiF
130ns
150ns
180ns
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E » 7 ^ 4 1 4 2 OOlSDfit 22Ì I SMGK • KMM591000BN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM591000BN is a 1M b it x 9 Dynamic RAM high density memory module. The Samsung
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OCR Scan
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KMM591000BN
KMM591000BN
KM44C1000BJ
20-pin
KM41C1000CJ
30-pin
110ns
KMM591000BN-7
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b 4E D • 7T b 4142 G a m b a s KMM5362000A1/A1G 41b ■ SMGK DRAM MODULES 2M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5362000A1 is a 2M bitsX36 Dynamic RAM high density memory module. The Samsung
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OCR Scan
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KMM5362000A1/A1G
KMM5362000A1
bitsX36
20-pin
72-pin
130ns
150ns
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