Untitled
Abstract: No abstract text available
Text: HUF76121SK8 Data Sheet April 1999 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 8A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models - SPICE and SABER Thermal Impedance Models
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PDF
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HUF76121SK8
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AN7254
Abstract: AN9321 AN9322 HUF76132SK8 HUF76132SK8T MS-012AA TB334
Text: HUF76132SK8 Data Sheet September 1999 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 11.5A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models - Spice and SABER Thermal Impedance Models
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Original
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PDF
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HUF76132SK8
TB334,
TA76131.
MS-012AA
AN7254
AN9321
AN9322
HUF76132SK8
HUF76132SK8T
MS-012AA
TB334
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Untitled
Abstract: No abstract text available
Text: HUF76105SK8 Data Sheet May 1999 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 5.5A, 30V • Ultra Low On-Resistance, rDS ON = 0.050Ω • Simulation Models - Temperature Compensated PSPICE and SABER
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Original
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PDF
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HUF76105SK8
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ta7610
Abstract: TA761 AN7254 AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334
Text: HUF76105SK8 Data Sheet May 1999 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 5.5A, 30V • Ultra Low On-Resistance, rDS ON = 0.050Ω • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models
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Original
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PDF
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HUF76105SK8
TA76105.
TB334,
MS-012AA
ta7610
TA761
AN7254
AN9321
AN9322
HUF76105SK8
HUF76105SK8T
MS-012AA
TB334
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TC2206
Abstract: TC-2112 202E1
Text: HUF76113SK8 Data Sheet October 1999 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 6.5A, 30V • Ultra Low On-Resistance, rDS ON = 0.030Ω • Temperature Compensating PSPICE Model • Temperature Compensating SABER Model
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Original
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PDF
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HUF76113SK8
TC2206
TC-2112
202E1
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Untitled
Abstract: No abstract text available
Text: Saber AZ61120-200 OC-48 Multi-Service Traffic Manager and SAR Product Brief Applications On-Chip ATM OAM Processing • • • Broadband Access Multiplexers DSLAM, PON OLT, CMTS, Wireless Base Stations • Edge Switches And Routers • Multi-Service / MPLS Switching Platforms
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Original
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PDF
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AZ61120-200
OC-48
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Untitled
Abstract: No abstract text available
Text: HUF76113DK8 Data Sheet June 2000 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 6A, 30V • Ultra Low On-Resistance, rDS ON = 0.032Ω • Temperature Compensating PSPICE Model • Temperature Compensating SABER Model
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Original
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PDF
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HUF76113DK8
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Untitled
Abstract: No abstract text available
Text: Saber AZ61120-100 2 x OC-12 Multi-Service Access Switch Product Brief Applications On-Chip ATM OAM Processing • • • Broadband Access Multiplexers DSLAM, PON OLT, CMTS, Wireless Base Stations • Edge Switches and Routers • Multi-Service / MPLS Switching Platforms
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Original
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PDF
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AZ61120-100
OC-12
AZ61120-100
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Untitled
Abstract: No abstract text available
Text: HUF76132SK8 Data Sheet September 1999 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 32S bt .5A 0V, 115 m, an, gic vel raF wer OST) utho • Logic Level Gate Drive • 11.5A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER∏
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Original
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HUF76132SK8
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75332p
Abstract: 75332S 75332 HUF75332P3 75332G huf75332 HUF75332G3 HUF75332S3S HUF75332S3ST TB334
Text: HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet June 1999 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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Original
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PDF
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HUF75332G3,
HUF75332P3,
HUF75332S3S
75332p
75332S
75332
HUF75332P3
75332G
huf75332
HUF75332G3
HUF75332S3S
HUF75332S3ST
TB334
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75345p
Abstract: No abstract text available
Text: HUF75345G3, HUF75345P3, HUF75345S3S Data Sheet December 2001 75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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Original
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PDF
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HUF75345G3,
HUF75345P3,
HUF75345S3S
HUF75345S3
O-262
75345p
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75307D
Abstract: 75307 transistor 75307D TA75307 AN9321 HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TB334
Text: HUF75307P3, HUF75307D3, HUF75307D3S Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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Original
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PDF
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HUF75307P3,
HUF75307D3,
HUF75307D3S
43cts
75307D
75307
transistor 75307D
TA75307
AN9321
HUF75307D3
HUF75307D3S
HUF75307D3ST
HUF75307P3
TB334
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76137s
Abstract: M4E1
Text: HUF76137P3, HUF76137S3S Data Sheet 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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Original
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PDF
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HUF76137P3,
HUF76137S3S
O-263
HUF76137S3S
76137s
M4E1
|
relay rs-5
Abstract: AN9322 HRFZ44N TB334 AN7254 AN7260 AN9321 135E3
Text: HRFZ44N Data Sheet June 1999 49A, 55V, 0.022 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in
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HRFZ44N
relay rs-5
AN9322
HRFZ44N
TB334
AN7254
AN7260
AN9321
135E3
|
|
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75639p
Abstract: 75639 75639g 75639S 504E3 TB334 HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST
Text: HUF75639G3, HUF75639P3, HUF75639S3S Data Sheet October 1999 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.7 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
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PDF
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HUF75639G3,
HUF75639P3,
HUF75639S3S
75639p
75639
75639g
75639S
504E3
TB334
HUF75639G3
HUF75639P3
HUF75639S3S
HUF75639S3ST
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75639G
Abstract: 75639P 75639S HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST TB334
Text: HUF75639G3, HUF75639P3, HUF75639S3S TM Data Sheet August 2000 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.8 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
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Original
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PDF
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HUF75639G3,
HUF75639P3,
HUF75639S3S
75639G
75639P
75639S
HUF75639G3
HUF75639P3
HUF75639S3S
HUF75639S3ST
TB334
|
75321p
Abstract: No abstract text available
Text: HUFA75321P3, HUFA75321S3S TM Data Sheet 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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Original
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HUFA75321P3,
HUFA75321S3S
75321p
|
Untitled
Abstract: No abstract text available
Text: HUFA75329D3, HUFA75329D3S TM Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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Original
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HUFA75329D3,
HUFA75329D3S
|
Untitled
Abstract: No abstract text available
Text: intervil HUF76121SK8 Data S h e e t A p r il 1999 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive Formerly developmental type TA76121. PACKAGE MS-012AA • 8A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER
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OCR Scan
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PDF
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HUF76121SK8
100ms.
|
I-16V
Abstract: No abstract text available
Text: HUF76105DK8 interrii Data Sheet O c to b e r 1999 SA, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 5A, 30V • Ultra Low On-Resistance, ros ON = 0.050Q • Temperature Compensating PSPICE Model • Temperature Compensating SABER® Model
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OCR Scan
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PDF
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HUF76105DK8
I-16V
|
Untitled
Abstract: No abstract text available
Text: HUF75329D3, HUF75329D3S Semiconductor Data Sheet June 1999 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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OCR Scan
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PDF
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HUF75329D3,
HUF75329D3S
13e-1
26e-2
HUF75329D
80e-3
00e-2
00e-3
60e-2
|
Untitled
Abstract: No abstract text available
Text: HUF75307P3, HUF75307D3, HUF75307D3S Semiconductor Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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OCR Scan
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PDF
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HUF75307P3,
HUF75307D3,
HUF75307D3S
HUF75307
|
TL 431 model SPICE
Abstract: Simulation Model tl 431
Text: HUF75309P3, HUF75309D3, HUF75309D3S Semiconductor June 1999 Data Sheet 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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OCR Scan
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PDF
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HUF75309P3,
HUF75309D3,
HUF75309D3S
HUF75309
TL 431 model SPICE
Simulation Model tl 431
|
Untitled
Abstract: No abstract text available
Text: HUF75337G3, HUF75337P3, HUF75337S3S Semiconductor Data Sheet June 1999 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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OCR Scan
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PDF
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HUF75337G3,
HUF75337P3,
HUF75337S3S
HUF75337
|
