SABER RELAY Search Results

Contextual Info: HUF76121SK8 Data Sheet April 1999 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 8A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models - SPICE and SABER Thermal Impedance Models

AN7254

Abstract: AN9321 AN9322 HUF76132SK8 HUF76132SK8T MS-012AA TB334
Contextual Info: HUF76132SK8 Data Sheet September 1999 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 11.5A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models - Spice and SABER Thermal Impedance Models

Contextual Info: HUF76105SK8 Data Sheet May 1999 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 5.5A, 30V • Ultra Low On-Resistance, rDS ON = 0.050Ω • Simulation Models - Temperature Compensated PSPICE and SABER

ta7610

Abstract: TA761 AN7254 AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334
Contextual Info: HUF76105SK8 Data Sheet May 1999 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 5.5A, 30V • Ultra Low On-Resistance, rDS ON = 0.050Ω • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models

TC2206

Abstract: TC-2112 202E1
Contextual Info: HUF76113SK8 Data Sheet October 1999 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 6.5A, 30V • Ultra Low On-Resistance, rDS ON = 0.030Ω • Temperature Compensating PSPICE Model • Temperature Compensating SABER Model

Contextual Info: Saber AZ61120-200 OC-48 Multi-Service Traffic Manager and SAR Product Brief Applications On-Chip ATM OAM Processing • • • Broadband Access Multiplexers DSLAM, PON OLT, CMTS, Wireless Base Stations • Edge Switches And Routers • Multi-Service / MPLS Switching Platforms

Contextual Info: HUF76113DK8 Data Sheet June 2000 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 6A, 30V • Ultra Low On-Resistance, rDS ON = 0.032Ω • Temperature Compensating PSPICE Model • Temperature Compensating SABER Model

Contextual Info: Saber AZ61120-100 2 x OC-12 Multi-Service Access Switch Product Brief Applications On-Chip ATM OAM Processing • • • Broadband Access Multiplexers DSLAM, PON OLT, CMTS, Wireless Base Stations • Edge Switches and Routers • Multi-Service / MPLS Switching Platforms

Contextual Info: intervil HUF76121SK8 Data S h e e t A p r il 1999 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive Formerly developmental type TA76121. PACKAGE MS-012AA • 8A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER

Contextual Info: HUF76132SK8 Data Sheet September 1999 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 32S bt .5A 0V, 115 m, an, gic vel raF wer OST) utho • Logic Level Gate Drive • 11.5A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER∏

I-16V

Contextual Info: HUF76105DK8 interrii Data Sheet O c to b e r 1999 SA, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 5A, 30V • Ultra Low On-Resistance, ros ON = 0.050Q • Temperature Compensating PSPICE Model • Temperature Compensating SABER® Model

75332p

Abstract: 75332S 75332 HUF75332P3 75332G huf75332 HUF75332G3 HUF75332S3S HUF75332S3ST TB334
Contextual Info: HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet June 1999 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

75345p

Contextual Info: HUF75345G3, HUF75345P3, HUF75345S3S Data Sheet December 2001 75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: HUF75329D3, HUF75329D3S Semiconductor Data Sheet June 1999 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: HUF75307P3, HUF75307D3, HUF75307D3S Semiconductor Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

76137s

Abstract: M4E1
Contextual Info: HUF76137P3, HUF76137S3S Data Sheet 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

relay rs-5

Abstract: AN9322 HRFZ44N TB334 AN7254 AN7260 AN9321 135E3
Contextual Info: HRFZ44N Data Sheet June 1999 49A, 55V, 0.022 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

75345P

Abstract: HUF75345S3ST 75345S HUF75345G3 HUF75345P3 HUF75345S3S TA75345 TB334 780E3
Contextual Info: HUF75345G3, HUF75345P3, HUF75345S3S Data Sheet June 1999 75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

75639p

Abstract: 75639 75639g 75639S 504E3 TB334 HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST
Contextual Info: HUF75639G3, HUF75639P3, HUF75639S3S Data Sheet October 1999 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.7 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology

75639G

Abstract: 75639P 75639S HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST TB334
Contextual Info: HUF75639G3, HUF75639P3, HUF75639S3S TM Data Sheet August 2000 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.8 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology

75321p

Contextual Info: HUFA75321P3, HUFA75321S3S TM Data Sheet 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: HUFA75329D3, HUFA75329D3S TM Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

TL 431 model SPICE

Abstract: Simulation Model tl 431
Contextual Info: HUF75309P3, HUF75309D3, HUF75309D3S Semiconductor June 1999 Data Sheet 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: HUF75337G3, HUF75337P3, HUF75337S3S Semiconductor Data Sheet June 1999 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,