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    SA66 Search Results

    SA66 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    7MPV6202SA66M Renesas Electronics Corporation 256KB BURST TRI. MOD. Visit Renesas Electronics Corporation
    7MPV6207SA66M Renesas Electronics Corporation 512K PB SRAM L2 CACHE 11 Visit Renesas Electronics Corporation
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    SA66 Price and Stock

    onsemi FSA660TMX

    IC SWITCH 2:1 MIPI C-PHY 18TMLP
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    DigiKey FSA660TMX Cut Tape 8,625 1
    • 1 $2.67
    • 10 $1.685
    • 100 $1.1354
    • 1000 $0.82996
    • 10000 $0.7504
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    FSA660TMX Digi-Reel 8,625 1
    • 1 $2.67
    • 10 $1.685
    • 100 $1.1354
    • 1000 $0.82996
    • 10000 $0.7504
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    FSA660TMX Reel 5,000 5,000
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    Avnet Americas FSA660TMX Reel 0 Weeks, 2 Days 820
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    • 10000 $0.7747
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    FSA660TMX Reel 21 Weeks 5,000
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    • 10000 $0.73012
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    Mouser Electronics FSA660TMX 6,468
    • 1 $1.76
    • 10 $1.5
    • 100 $1.2
    • 1000 $0.807
    • 10000 $0.739
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    Newark FSA660TMX Bulk 5,000
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    Rochester Electronics FSA660TMX 1
    • 1 $0.8214
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    • 100 $0.7721
    • 1000 $0.6982
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    Avnet Silica FSA660TMX 22 Weeks 5,000
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    Flip Electronics FSA660TMX 5,000
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    Essentra Components LCBSA-6-6-19

    BRD SPT SNAP LOCK NYLON 3/8"
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    DigiKey LCBSA-6-6-19 Bulk 1,835 1
    • 1 $0.76
    • 10 $0.578
    • 100 $0.443
    • 1000 $0.34377
    • 10000 $0.30654
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    Mouser Electronics LCBSA-6-6-19
    • 1 $0.57
    • 10 $0.386
    • 100 $0.329
    • 1000 $0.278
    • 10000 $0.27
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    RS LCBSA-6-6-19 Bulk 4 Weeks 1,000
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    DB Roberts LCBSA-6-6-19
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    Essentra Components LCBSA-6-6-01

    BRD SPT SNAP LOCK NYLON 3/8"
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    DigiKey LCBSA-6-6-01 Bulk 1,300 1
    • 1 $0.63
    • 10 $0.482
    • 100 $0.3691
    • 1000 $0.28603
    • 10000 $0.25485
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    Mouser Electronics LCBSA-6-6-01
    • 1 $0.61
    • 10 $0.4
    • 100 $0.333
    • 1000 $0.276
    • 10000 $0.246
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    RS LCBSA-6-6-01 Bulk 4 Weeks 1,000
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    DB Roberts LCBSA-6-6-01
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    Xeltek Inc SA666

    ADAPTER PROGRAMMER 8-MSOP
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    DigiKey SA666 Bulk 1
    • 1 $107.1
    • 10 $107.1
    • 100 $107.1
    • 1000 $107.1
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    onsemi FSA66P5

    IC SWITCH SPST-NO X 1 SC70-5
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    DigiKey FSA66P5 Reel
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    Find more SA66 price and stock on Findchips.com

    SA66 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AT49BV320D

    Abstract: AT49BV320DT SA70 AT49BV
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout


    Original     		PDF 3581D AT49BV320D AT49BV320DT SA70 AT49BV

    w19b320

    Abstract: No abstract text available
    Text: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


    Original     		PDF W19B320AT/B w19b320

    48C20

    Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
    Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout


    Original     		PDF 3608C 48C20 SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom

    CompactCellTM Static RAM

    Abstract: No abstract text available
    Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS


    Original     		PDF Am45DL6408G 16-Bit) 8-Bit/512 73-Ball limitation02 CompactCellTM Static RAM

    GL032A

    Abstract: S71GL032A S71GL032
    Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this


    Original     		PDF S71GL032A 16-bit) 1M/512K/256K GL032A S71GL032

    M15451E

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can


    Original     		PDF PD29F064115-X 64M-BIT 16-BIT PD29F064115-X M15451E

    SA6954

    Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to


    Original     		PDF S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00

    740-0007

    Abstract: EN29GL064 6A000
    Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and


    Original     		PDF EN29GL064 8192K 4096K 16-bit) 740-0007 EN29GL064 6A000

    3582B

    Abstract: AT49BV322D AT49BV322DT AT49BV
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout


    Original     		PDF 3582B AT49BV322D AT49BV322DT AT49BV

    110R

    Abstract: S29GL128N
    Text: Am29LV6402M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL128N supersedes Am29LV6402M and is the factory-recommended migration path. Please refer to the S29GL128N Data Sheet for specifications and ordering information. Availability of this


    Original     		PDF Am29LV6402M S29GL128N 110R

    4kw marking

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50308-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x16) FLASH MEMORY & 8M (×16) STATIC RAM MB84VD22280FA-70/MB84VD22290FA-70 MB84VD22280FE-70/MB84VD22290FE-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.1 V


    Original     		PDF DS05-50308-2E MB84VD22280FA-70/MB84VD22290FA-70 MB84VD22280FE-70/MB84VD22290FE-70 59-ball MB84VD22280FA/80FE/90FA/90FE F0311 4kw marking

    FPT-48P-M19

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20904-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF-70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V


    Original     		PDF DS05-20904-2E MBM29DL32TF/BF-70 MBM29DL32TF/BF MBM29DL32TF/BF F0305 FPT-48P-M19

    SA70

    Abstract: 2SA31
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50212-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 • FEATURES


    Original     		PDF DS05-50212-3E MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 71-ball F0111 SA70 2SA31

    Untitled

    Abstract: No abstract text available
    Text: 弾性表面波デバイス WFA18B0037KB 高精度産業用 • 特長 ● 地上波デジタル放送ギャップフィラー用の IF SAW フィルタです。 ● 小型品です。 ● 低帯域リップルです。 ● 優れた急峻度特性です。


    Original     		PDF WFA18B0037KB 79MHz connec15

    Untitled

    Abstract: No abstract text available
    Text: ESMT Preliminary F49L320UA/F49L320BA 32 Mbit 4M x 8/2M x 16 3V Only CMOS Flash Memory 1. FEATURES z z z z z z z z z z - Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 4,194,304x8 / 2,097,152x16 switchable by BYTE pin Compatible with JEDEC standard


    Original     		PDF F49L320UA/F49L320BA 304x8 152x16 9s/11s

    mx29lv320ttc

    Abstract: MX29LV320T Q0-Q15 SA10
    Text: MX29LV320T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle • 10-year data retention


    Original     		PDF MX29LV320T/B 32M-BIT 200nA 10-year 64K-Byte FEB/10/2003 MAR/26/2003 APR/23/2003 JUL/04/2003 mx29lv320ttc MX29LV320T Q0-Q15 SA10

    Untitled

    Abstract: No abstract text available
    Text: ESMT Preliminary F49L320UA/F49L320BA 32 Mbit 4M x 8/2M x 16 3V Only CMOS Flash Memory 1. FEATURES z z z z z z z z z z - Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 4,194,304x8 / 2,097,152x16 switchable by BYTE pin Compatible with JEDEC standard


    Original     		PDF F49L320UA/F49L320BA 304x8 152x16 9s/11s

    SA70

    Abstract: 18FFFFH
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50204-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 • FEATURES • Power supply voltage of 2.7 to 3.3 V


    Original     		PDF DS05-50204-2E MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 73-ball MB84VD2218XEC/EE-90/MB84VD2219XEC/EE-90 SA70 18FFFFH

    MBM29BS64LF

    Abstract: MBM29BS64LF-18 MBM29BT64LF-18
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20916-1E BURST MODE FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29BS/BT64LF-18/25 • GENERAL DESCRIPTION The MBM29BS/BT64LF is a 64M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 4M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed


    Original     		PDF DS05-20916-1E MBM29BS/BT64LF-18/25 MBM29BS/BT64LF 60-ball MBM29BS/ BT64LF-25 MBM29BT64LF-18 MBM29BS64LF-18 F0403 MBM29BS64LF MBM29BS64LF-18

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS71VPCF32XS04 3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip Package MCP — 32 Mbit Simultaneous Operation Flash Memory and 4 Mbit Static RAM MCP FEATURES • Power supply voltage 2.7V to 3.3V • High performance: PRELIMINARY INFORMATION


    Original     		PDF IS71VPCF32XS04 73-ball CF32ES04-8570BI IS71VPCF32FS04-8570BI IS71VPCF32AS04-8585BI IS71VPCF32BS04-8585BI IS71VPCF32CS04-8585BI

    BGA-101P-M01

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash • Power Supply Voltage of 2.3 V to 2.7 V for FCRAM


    Original     		PDF DS05-50208-2E MB84LD23381EJ-10 101-ball BGA-101P-M01

    DL322

    Abstract: DL323 DL324
    Text: PRELIMINARY Am41DL32x4G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features


    Original     		PDF Am41DL32x4G 16-Bit) 8-Bit/256 73-Ball FLB073--73-Ball DL322 DL323 DL324

    29LV641

    Abstract: 29LV640D
    Text: A D V A N C E IN F O R M A T IO N AMDil Am29LV640DU/Am29LV641 DU 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with Versatilel/O Control DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation Compatibility with JEDEC standards


    OCR Scan     		PDF Am29LV640DU/Am29LV641 16-Bit) 48-pin 56-pin Am29LV640DU/Am 29LV641 TSR048-- 16-038-TS48 TSR048 29LV640D

    L323C

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION AMDZ1 Am29DL32xC 32 Megabit 4 M x 8 -Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank w hile


    OCR Scan     		PDF Am29DL32xC 16-Bit) 29DL32xC L323C