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    SA29 PINOUT Search Results

    SA29 PINOUT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    QS3861QG8 Renesas Electronics Corporation High-Speed CMOS 10-Bit Bus Switch with Flow-Thru Pinout Visit Renesas Electronics Corporation
    71128S12YG Renesas Electronics Corporation 256K X 4 SRAM REV. PINOUT Visit Renesas Electronics Corporation
    71128S15YG Renesas Electronics Corporation 256K X 4 SRAM REV. PINOUT Visit Renesas Electronics Corporation
    71128S20Y8 Renesas Electronics Corporation 256K X 4 SRAM REV. PINOUT Visit Renesas Electronics Corporation
    71128S12Y Renesas Electronics Corporation 256K X 4 SRAM REV. PINOUT Visit Renesas Electronics Corporation

    SA29 PINOUT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AM29F040B date code marking information

    Abstract: AM29F040B PART MARKING marking CODE SA2 marking AM29F040B SA29 170000H Am29LV200BB sa29 pinout 00000H Am29LV002T
    Text: ExpressFlashTM Code Approval Form Section 1: CODE TRANSMITTAL AND ORDERING INFORMATION SECTION Date _ CUSTOMER INFORMATION 1. Company Name _ 2. Customer Contact Name _ 3. Contact’s Phone No. _ 4. AMD Salesperson _


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    AM29DL164CB

    Abstract: F0000H-F7FFFH F8000H-FFFFFH sa37 D8000H-DFFFFH B8000H-BFFFFH 10001XXX 00000H-07FFFH 030000H-03FFFFH 11000XXX
    Text: SUPPLEMENT ADVANCE INFORMATION Am29DL164C Data Sheet Supplement This supplement is for use with the Am29DL162/ Am29DL163C data sheet, publication number 21533. This document contains information on ordering part numbers, device bank division, and sector configuration. For all other specifications, refer to the data sheet.


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    PDF Am29DL164C Am29DL162/ Am29DL163C x8/x16 Kbyte/32 Am29DL164CB F0000H-F7FFFH F8000H-FFFFFH sa37 D8000H-DFFFFH B8000H-BFFFFH 10001XXX 00000H-07FFFH 030000H-03FFFFH 11000XXX

    FPT-48P-M19

    Abstract: FPT-48P-M20 SA10 SA11 SA12 222eh 222DH 222BH BD703 mbm29dl16xtd
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTD-70/-90/-12/MBM29DL16XBD-70/-90/-12 • FEATURES • 0.33um Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)


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    PDF L16XTD-70/-90/-12/MBM29DL16XBD-70/-90/-12 48-pin FPT-48P-M19 FPT-48P-M20 SA10 SA11 SA12 222eh 222DH 222BH BD703 mbm29dl16xtd

    diagram qualcomm

    Abstract: QUALCOMM Reference design qualcomm temperature QUALCOMM BGA block diagram of qualcomm PM Qualcomm FPT-48P-M19 FPT-48P-M20 SA10 qualcomm aT commands
    Text: FUJITSU SEMICONDUCTOR DATA SHEET Qualcomm only 2.0E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DD16XTD-90/MBM29DD16XBD-90 • FEATURES • 0.33um Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)


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    PDF MBM29DD16XTD-90/MBM29DD16XBD-90 48-pin diagram qualcomm QUALCOMM Reference design qualcomm temperature QUALCOMM BGA block diagram of qualcomm PM Qualcomm FPT-48P-M19 FPT-48P-M20 SA10 qualcomm aT commands

    sa29 pinout

    Abstract: FPT-48P-M19 FPT-48P-M20 SA10
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DD16XTD-10/MBM29DD16XBD-10 • FEATURES • 0.33um Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)


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    PDF MBM29DD16XTD-10/MBM29DD16XBD-10 48-pin sa29 pinout FPT-48P-M19 FPT-48P-M20 SA10

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTD/BD -70/90/12 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)


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    PDF DS05-20874-4E MBM29DL16XTD/BD F9909

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTE/BE -70/90/12 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)


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    PDF DS05-20880-1E MBM29DL16XTE/BE MBM29DL16XTE/BE

    BGA-48P-M13

    Abstract: DS05-20874-4E FPT-48P-M19 FPT-48P-M20
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTD/BD -70/90/12 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)


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    PDF DS05-20874-4E MBM29DL16XTD/BD MBM29DL16XTD/MBM29DL16XBD BGA-48P-M13 DS05-20874-4E FPT-48P-M19 FPT-48P-M20

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTE/BE -70/90/12 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)


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    PDF DS05-20880-1E MBM29DL16XTE/BE F0005

    DS05-20874-4E

    Abstract: BGA-48P-M13 FPT-48P-M19 FPT-48P-M20
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTD/BD -70/90/12 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)


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    PDF DS05-20874-4E MBM29DL16XTD/BD MBM29DL16XTD/MBM29DL16XBD DS05-20874-4E BGA-48P-M13 FPT-48P-M19 FPT-48P-M20

    1820-1940

    Abstract: BGA-48P-M13 DS05-20874-7E FPT-48P-M19 FPT-48P-M20
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-7E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTD/BD -70/90 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table”


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    PDF DS05-20874-7E MBM29DL16XTD/BD MBM29DL16XTD/MBM29DL16XBD F0303 1820-1940 BGA-48P-M13 DS05-20874-7E FPT-48P-M19 FPT-48P-M20

    BGA-48P-M13

    Abstract: DS05-20874-4E FPT-48P-M19 FPT-48P-M20
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTD/BD -70/90/12 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)


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    PDF DS05-20874-4E MBM29DL16XTD/BD MBM29DL16XTD/MBM29DL16XBD BGA-48P-M13 DS05-20874-4E FPT-48P-M19 FPT-48P-M20

    DS05-20874-5E

    Abstract: BGA-48P-M13 FPT-48P-M19 FPT-48P-M20 F0211
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-5E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTD/BD -70/90 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table”


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    PDF DS05-20874-5E MBM29DL16XTD/BD MBM29DL16XTD/MBM29DL16XBD F0211 DS05-20874-5E BGA-48P-M13 FPT-48P-M19 FPT-48P-M20 F0211

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-6E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTD/BD -70/90 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table”


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    PDF DS05-20874-6E MBM29DL16XTD/BD F0302

    DS05-20880-1E

    Abstract: FPT-48P-M19 FPT-48P-M20
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTE/BE -70/90/12 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)


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    PDF DS05-20880-1E MBM29DL16XTE/BE MBM29DL16XTE/BE DS05-20880-1E FPT-48P-M19 FPT-48P-M20

    1820-1940

    Abstract: DS05-20874-7E mbm29dl16xtd
    Text: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,


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    PDF F0303 1820-1940 DS05-20874-7E mbm29dl16xtd

    SA30* diode

    Abstract: FPT-48P-M19 FPT-48P-M20
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTE/BE70/90 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes


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    PDF DS05-20880-4E MBM29DL16XTE/BE70/90 MBM29DL16XTE/BE MBM29DL16XTE/BE70 MBM29DL16XTE/BE90 F0311 SA30* diode FPT-48P-M19 FPT-48P-M20

    DIODE marking A19

    Abstract: FPT-48P-M19 FPT-48P-M20
    Text: MBM29DL16XTE/BE70/90 Data Sheet Retired Product MBM29DL16XTE/BE 70/90 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications


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    PDF MBM29DL16XTE/BE70/90 MBM29DL16XTE/BE DS05-20880-5E F0311 ProductDS05-20880-5E DIODE marking A19 FPT-48P-M19 FPT-48P-M20

    DS05-20880-3E

    Abstract: FPT-48P-M19 FPT-48P-M20 SA30* diode
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-3E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTE/BE70/90 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes


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    PDF DS05-20880-3E MBM29DL16XTE/BE70/90 MBM29DL16XTE/BE MBM29DL16XTE/BE70 MBM29DL16XTE/BE90 F0305 DS05-20880-3E FPT-48P-M19 FPT-48P-M20 SA30* diode

    6b90

    Abstract: No abstract text available
    Text: FLASH MEMORY CMOS 1 6 M 2 M X 8 BIT M M L .V Ö 16 B - 9 0 - 1 2 FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JED EC-standard commands Uses same software commands as E2PROMs • Compatible with JED EC-standard world-wide pinouts


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    PDF 40-pin F9802 6b90

    Untitled

    Abstract: No abstract text available
    Text: FLASH MEMORY CMOS 16 M 2 M x 8 BIT MBM29F016 -12-x • FEATURES • • • • • • • • • • • • • • • • Single 5.0 V read, program, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash


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    PDF MBM29F016 -12-x 48-pin Embedd20Â MBM29F016-12-X 48-LE

    222DH

    Abstract: SKB 7 02 BGA-48P-M13 FPT-48P-M19 FPT-48P-M20 mbm29dl16xtd
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-4E FLASH MEMORY M l l l 16M 2M X 8/1M X 16 BIT


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    PDF MBM29DL16XTD/BD MBM29DL16XTDMBM29DL16XBD F48030S-2C-2 MBM29DL16XTD/BD-70/90/12 48-pin BGA-48P-M13) 000000o 48-0O B480013S-1C-1 222DH SKB 7 02 BGA-48P-M13 FPT-48P-M19 FPT-48P-M20 mbm29dl16xtd

    sa29 pinout

    Abstract: 29LV160T TOP SIDE MARKING m03 29LV160
    Text: FLASH MEMORY CM OS 8 / 1 X* 1 2 -m M X 1 6 B M 29 B I T ‘9 0 -X /-1 2 -X • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JED EC-standard commands Uses same software commands as E2PROMs


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    PDF 48-pin 46-pin 48-ball D-63303 F97010 sa29 pinout 29LV160T TOP SIDE MARKING m03 29LV160

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20843-3E FLASH MEMORY CMOS 16M 2M X 8 BIT MBM29F017A-70/-90/-12 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash


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    PDF DS05-20843-3E MBM29F017A-70/-90/-12 48-pin 40-pin F48029S-2C-2 FPT-48P-M20) F48030S-2C-2